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1. 发明申请

US20090159432A1 Thin-film deposition apparatus using discharge electrode and solar cell fabrication method 审中-公开
标题翻译：使用放电电极和太阳能电池制造方法的薄膜沉积装置
公开(公告)号：US20090159432A1
公开(公告)日：2009-06-25
申请号：US12227970
申请日：2007-08-22
申请人： Shingo Kawano , Eiichiro Ohtsubo , Naoyuki Miyazono , Keisuke Kawamura , Yoshiaki Takeuchi
发明人： Shingo Kawano , Eiichiro Ohtsubo , Naoyuki Miyazono , Keisuke Kawamura , Yoshiaki Takeuchi
IPC分类号： C23C14/34
CPC分类号： C23C16/509 , C23C16/45563 , C23C16/4557 , C23C16/46 , H01J37/32009 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L31/075 , H01L31/18 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A discharge electrode, a thin-film deposition apparatus, and a solar cell fabrication method, which suppress the generation of a film thickness distribution and a film quality distribution, are provided. The discharge electrode includes two lateral structures 20 that are substantially parallel to each other and extend in an X direction; and a plurality of longitudinal structures 21a that are provided between the two lateral structures, are substantially parallel to each other, and extend in a Y direction substantially orthogonal to the X direction. The longitudinal structures 21a each include an electrode main body 35 whose one end 35a is connected to one of the lateral structures 20 and whose the other end 35b is connected to the other lateral structure 20; a gas pipe 41 disposed in a gas-pipe accommodating space 36; and a porous body 40. An opening 38 opens to a substrate 8 and is covered with the porous body 40. A gas diffusion path 37 connects the gas-pipe accommodating space 36 and the opening 38. The electrode inner surface 39 faces the gas-pipe accommodating space 36 and opposes the pipe outer surface 42b. A nozzle hole group 42c is arranged in the second direction in the gas pipe 41, and faces a section 39a at a side opposite to the gas diffusion path 37 in the electrode inner surface 39.
摘要翻译：提供抑制膜厚分布的产生和膜质量分布的放电电极，薄膜沉积装置和太阳能电池的制造方法。放电电极包括基本上彼此平行并沿X方向延伸的两个横向结构20; 并且设置在两个横向结构之间的多个纵向结构21a基本上彼此平行，并且在大致正交于X方向的Y方向上延伸。纵向结构21a各自包括电极主体35，其一端35a连接到横向结构20中的一个，另一端35b连接到另一侧向结构20; 设置在气体管容纳空间36中的气体管道41; 和多孔体40.开口38通向基板8并被多孔体40覆盖。气体扩散路37连接气体管容纳空间36和开口38.电极内表面39面对气体 - 管容纳空间36并与管外表面42b相对。喷嘴孔组42c沿气体配管41的第二方向排列，与电极内表面39的与气体扩散路37相反侧的部分39a相对。

2. 发明申请

US20130084408A1 VACUUM PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：真空加工设备和等离子体处理方法
公开(公告)号：US20130084408A1
公开(公告)日：2013-04-04
申请号：US13703694
申请日：2011-05-09
申请人： Sachiko Nakao , Eishiro Sasakawa , Yoshiaki Takeuchi , Naoyuki Miyazono , Eiichiro Ohtsubo
发明人： Sachiko Nakao , Eishiro Sasakawa , Yoshiaki Takeuchi , Naoyuki Miyazono , Eiichiro Ohtsubo
IPC分类号： C23C16/50
CPC分类号： C23C16/50 , C23C16/4412 , C23C16/4557 , C23C16/45578 , C23C16/46 , C23C16/511 , H01J37/32229 , H01L31/1804 , H01L31/1816 , H01L31/1824 , H01L31/1876 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02P70/521
摘要： A vacuum processing apparatus includes a discharge chamber with a ridge waveguide having an exhaust-side ridge electrode and a substrate-side ridge electrode between which a plasma is formed; a pair of converters, which convert high-frequency power into TE mode, which represents the basic transmission mode of rectangular waveguides, for transmission to the discharge chamber, and form a plasma between the exhaust-side ridge electrode and the substrate-side ridge electrode; a uniform heating temperature controller, which is disposed on the outer surface of the substrate-side ridge electrode and heats the electrode uniformly; and a heat-absorbing temperature control unit, which is disposed on the outer surface of the exhaust-side ridge electrode and controls thermal flux through the thickness direction of a substrate undergoing plasma processing. The substrate is disposed between the exhaust-side ridge electrode and the substrate-side ridge electrode, and subjected to plasma processing.
摘要翻译：一种真空处理装置，包括具有带有排气侧脊电极的脊波导和形成有等离子体的基板侧脊电极的放电室，一对转换器，其将高频功率转换成TE模式，其表示矩形波导的基本传输模式，用于传输到放电室，并且在排气侧脊电极和衬底侧脊电极之间形成等离子体 ; 均匀的加热温度控制器，其设置在基板侧脊电极的外表面上，并均匀地加热电极; 以及吸收温度控制单元，其设置在排气侧脊电极的外表面上，并控制经受等离子体处理的基板的厚度方向的热通量。基板设置在排气侧脊电极和基板侧脊电极之间，进行等离子体处理。

3. 发明授权

US07141516B2 High frequency plasma generator and high frequency plasma generating method 失效
标题翻译：高频等离子体发生器和高频等离子体发生方法
公开(公告)号：US07141516B2
公开(公告)日：2006-11-28
申请号：US10519553
申请日：2003-10-01
申请人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Yoshiaki Takeuchi
发明人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Yoshiaki Takeuchi
IPC分类号： C23C16/00
CPC分类号： H01J37/32155 , H01J37/32091
摘要： An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2). Here, the second high-frequency voltage has the same frequency as that of the first high-frequency voltage and has a phase which varies with a low-frequency signal, which is modulated by a predetermined modulation signal.
摘要翻译：本发明的目的是提供一种高频等离子体发生装置和方法，与现有的装置相比，能够进一步提高基板上膜厚度的均匀性。在反应室（1）中设置接地电极（3），放电电极（2）与接地电极（3）相对设置。作为处理对象的基板（4）与接地电极（3）紧密接触。向放电电极（2）施加高频电压，以在接地电极和放电电极之间产生等离子体。 RF电源（15）产生第一高频电压，并且在放电电极（2）的侧面部分上的馈电点（9）上输出产生的电压。 RF电源（16）产生第二高频电压，并且在放电电极（2）的另一侧面部分上的馈电点（9）上输出产生的电压。这里，第二高频电压具有与第一高频电压相同的频率，并且具有随着由预定调制信号调制的低频信号而变化的相位。

4. 发明申请

US20050255255A1 Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus 有权
标题翻译：用于等离子体化学气相沉积装置的用于在大表面积上产生均匀的高频等离子体的方法和装置
公开(公告)号：US20050255255A1
公开(公告)日：2005-11-17
申请号：US10494528
申请日：2002-10-29
申请人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
发明人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
IPC分类号： C23C16/509 , H01J37/32 , H05H1/24 , C23C16/00
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082
摘要： This invention relates a plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. The present invention installs a first and a second power supply section on both ends of the discharge electrode installed in plasma chemical vapor deposition apparatus, which are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.
摘要翻译：本发明涉及一种等离子体生成装置，其用于通过安装在等离子体化学气相沉积装置中的非常高频（VHF）在大面积上均匀地产生等离子体。本发明在安装在等离子体化学气相沉积装置中的放电电极的两端安装第一和第二电源部分，该等离子体化学气相沉积装置被提供有交替的周期：第一和第二电源部分接收高频波相同的频率，以及接收不同的高频波的第二周期。以这种方式，等离子体产生的状态可以在每个周期中变化，并且当随时间平均时，使得在大的表面积上等离子体产生是均匀的。

5. 发明授权

US07833587B2 Method for plasma-enhanced chemical vapor deposition and apparatus for plasma-enhanced chemical vapor deposition 有权
标题翻译：等离子体增强化学气相沉积方法和等离子体增强化学气相沉积装置
公开(公告)号：US07833587B2
公开(公告)日：2010-11-16
申请号：US10518371
申请日：2003-10-29
申请人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
发明人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
IPC分类号： H05H1/24 , C23C16/00 , B01J19/08 , G21H1/00 , G21H5/00 , H01F41/00
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082 , H01J37/32577
摘要： A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables (19a to 19h and 24a to 24h) having a standard length and vacuum cables (20a to 20h and 25a to 25h) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film. The distribution of the film formed on the substrate is made uniform by repeating the above operations.
摘要翻译：提供了一种使膜厚分布特性均匀的方法，通过操纵传输高频电力的电缆的电气特性，避免了高频电力流之间的相位差的产生。安装具有标准长度和真空电缆（20a〜20h，25a〜25h）的同轴电缆（19a〜19h，24a〜24h），通过实际供给高频电力而在基板上形成膜，之后，观察气相沉积的条件，如膜的厚度。基于这些观察，改变了与馈送点和电极相连的同轴电缆的全部长度，这些电极对应于需要调整的衬底上的位置。再次安装同轴电缆，提供与上次操作相同的高频电力，形成薄膜。通过重复上述操作，使形成在基板上的膜的分布均匀。

6. 发明授权

US07319295B2 High-frequency power supply structure and plasma CVD device using the same 失效
标题翻译：高频电源结构和等离子体CVD装置使用相同
公开(公告)号：US07319295B2
公开(公告)日：2008-01-15
申请号：US10506544
申请日：2003-03-13
申请人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
发明人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
IPC分类号： H01J7/24
CPC分类号： H01J37/32577 , H01J37/32082
摘要： A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.
摘要翻译：提供射频电源结构和包括该射频电源结构的等离子体CVD装置，其中RF电缆连接到电极的连接部分处的射频功率的反射减小，使得射频功率进入电极的入射增加。在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中，射频电源结构从RF电缆向射频电源供给射频电力，RF电缆为位于由电极形成的平面的延伸平面上，以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。由此，连接部的阻抗变化减小，连接部处的射频功率的反射减小，电极的射频功率的增加，成膜和表面处理的效率提高。

7. 发明申请

US20050127844A1 High-frequency power supply structure and plasma cvd device using the same 失效
标题翻译：高频电源结构和等离子cvd设备使用相同
公开(公告)号：US20050127844A1
公开(公告)日：2005-06-16
申请号：US10506544
申请日：2003-03-13
申请人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
发明人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
IPC分类号： C23C16/509 , H01J37/32 , H01L21/205 , H01J7/24
CPC分类号： H01J37/32577 , H01J37/32082
摘要： A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.
摘要翻译：提供射频电源结构和包括该射频电源结构的等离子体CVD装置，其中RF电缆连接到电极的连接部分处的射频功率的反射减小，使得射频功率进入电极的入射增加。在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中，射频电源结构从RF电缆向射频电源供给射频电力，RF电缆为位于由电极形成的平面的延伸平面上，以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。由此，连接部的阻抗变化减小，连接部处的射频功率的反射减小，电极的射频功率的增加，成膜和表面处理的效率提高。

8. 发明申请

US20050223990A1 Plasma processing system and its substrate processing process, plasma enhanced chemical vapor deposition system and its film deposition process 审中-公开
标题翻译：等离子体处理系统及其基板加工工艺，等离子体增强化学气相沉积系统及其薄膜沉积工艺
公开(公告)号：US20050223990A1
公开(公告)日：2005-10-13
申请号：US10519475
申请日：2003-10-01
申请人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Kenji Tagashira , Yoshiaki Takeuchi
发明人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Kenji Tagashira , Yoshiaki Takeuchi
IPC分类号： H05H1/46 , B01J19/08 , C23C16/509 , H01J37/32 , H01L21/205 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/509 , H01J37/32183 , H01J37/32541
摘要： An object is to provide apparatuses for plasma processing which can make the distribution of the film thickness of a substance on a substrate uniform, methods of processing a substrate therewith, apparatuses for plasma-enhanced chemical vapor deposition, and methods for film formation therewith. When a desired substance is vapor deposited on the surface of a substrate (3), characteristics of the distribution of the thickness of a film on the substrate having a large area are improved by eliminating local imbalance in the distribution of the film thickness originating from deviation in the distribution of voltage on the ladder electrode (2), by way of adjusting impedance matching between each coaxial cable and corresponding feeding point for the ladder-shaped electrode (2) using branch cables provided to the coaxial cables for supplying high-frequency electric power to a ladder-shaped electrode (2) so as to make the film thickness uniform in the direction at right angles with the direction of fed electric power, whereby high-frequency electric power which is fed to each longitudinal electrode rod (2a) of the ladder-shaped electrode (2) can be adjusted, and distribution of voltage at a right or left part of the substrate and distribution of voltage at a central part of the substrate can be balanced, as well as by way of promoting uniformity in the distribution of the film thickness in the direction of fed electric power, by supplying streams of high-frequency electric power having the same frequency from two power supplies to the ladder-shaped electrode (2) with the phase difference between the high-frequency electric powers being varied over time.
摘要翻译：目的在于提供能够使基板上的物质的膜厚分布均匀的等离子体处理装置，用于处理基板的方法，等离子体增强化学气相沉积的装置及其成膜方法。当在基板（3）的表面上气相沉积所需物质时，通过消除由于偏差导致的膜厚度分布的局部不平衡，改善了具有大面积的基板上的膜的厚度分布特性在梯形电极（2）上的电压分配中，通过使用提供给用于提供高频电气的同轴电缆的分支电缆来调节每个同轴电缆与梯形电极（2）的相应馈电点之间的阻抗匹配向梯形电极（2）施加电力以使膜厚度与与馈送电力方向成直角的方向均匀，由此，供给到每个纵向电极棒（2a）的高频电力可以调节梯形电极（2），并且可以调整基板的右侧或左侧的电压分布以及中心部分的电压分布可以通过将来自两个电源的具有相同频率的高频电力的流提供给梯子，从而通过提高膜馈送电力方向上的膜厚分布的均匀性来平衡基板形状的电极（2），其中高频电功率之间的相位差随时间变化。

9. 发明授权

US07205034B2 Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus 有权
标题翻译：用于等离子体化学气相沉积装置的用于在大表面积上产生均匀的高频等离子体的方法和装置
公开(公告)号：US07205034B2
公开(公告)日：2007-04-17
申请号：US10494528
申请日：2002-10-29
申请人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
发明人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
IPC分类号： H05H1/24
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082
摘要： A plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. A first and a second power supply section are installed on both ends of the discharge electrode installed in a plasma chemical vapor deposition apparatus, and are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.
摘要翻译：一种等离子体产生装置，其通过安装在等离子体化学气相沉积装置中的非常高频（VHF）在大面积上均匀地产生等离子体。第一和第二电源部安装在安装在等离子体化学气相沉积装置中的放电电极的两端，并且被提供有交替的周期：第一周期，其中第一和第二电源部分接收高频相同的频率，以及接收不同的高频波的第二周期。以这种方式，等离子体产生的状态可以在每个周期中变化，并且当随时间平均时，使得在大的表面积上等离子体产生是均匀的。

10. 发明申请

US20050272261A1 Plasma chemical vapor deposition method and plasma chemical vapor deposition device 有权
标题翻译：等离子体化学气相沉积法和等离子体化学气相沉积装置
公开(公告)号：US20050272261A1
公开(公告)日：2005-12-08
申请号：US10518371
申请日：2003-10-29
申请人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
发明人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
IPC分类号： C23C16/509 , H01J37/32 , H01L21/205 , H01J7/24 , H01L21/44 , H05B31/26
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082 , H01J37/32577
摘要： A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables (19a to 19h and 24a to 24h) having a standard length and vacuum cables (20a to 20h and 25a to 25h) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film. The distribution of the film formed on the substrate is made uniform by repeating the above operations.
摘要翻译：提供了一种使膜厚分布特性均匀的方法，通过操纵传输高频电力的电缆的电气特性，避免了高频电力流之间的相位差的产生。同轴电缆（19 a至19 h和24 a至24 h）安装有标准长度和真空电缆（20 a至20 h和25 a至25 h），然后通过实际供电高度在基板上形成薄膜频率电力，然后观察气相沉积的条件，例如膜的厚度。基于这些观察，改变了与馈送点和电极相连的同轴电缆的全部长度，这些电极对应于需要调节的衬底上的位置。再次安装同轴电缆，提供与上次操作相同的高频电力，形成薄膜。通过重复上述操作，使形成在基板上的膜的分布均匀。

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