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1. 发明授权

US08529704B2 Vacuum processing apparatus and operating method for vacuum processing apparatus 失效
标题翻译：真空处理装置及真空处理装置的操作方法
公开(公告)号：US08529704B2
公开(公告)日：2013-09-10
申请号：US12864624
申请日：2008-06-27
申请人： Eishiro Sasakawa , Masahiro Sakaki , Shigekazu Ueno , Keisuke Kawamura , Akemi Takano
发明人： Eishiro Sasakawa , Masahiro Sakaki , Shigekazu Ueno , Keisuke Kawamura , Akemi Takano
IPC分类号： B08B5/04
CPC分类号： C23C16/4401 , C23C16/4404 , C23C16/4405 , H01J37/3244 , H01J37/32449 , H01J37/32862
摘要： An operation method for cleaning a vacuum processing apparatus includes feeding a cleaning gas into a film deposition chamber of the vacuum processing apparatus when a predetermined number of batches of film deposition process is finished. The predetermined number of batch of film deposition processes is calculated based on a film deposition-related operating time (a film deposition time and a film deposition preparation time) and a cleaning-related operating time (a cleaning procedure time, a cleaning procedure preparation time, and a pre-deposition film deposition time).
摘要翻译：用于清洁真空处理装置的操作方法包括当预定数量的成膜过程完成时，将清洁气体进料到真空处理设备的成膜室中。基于薄膜沉积相关的操作时间（薄膜沉积时间和薄膜沉积准备时间）和清洁相关的操作时间（清洁程序时间，清洁程序准备时间）来计算预定数量的成膜沉积工艺，以及预沉积膜沉积时间）。

2. 发明申请

US20100310785A1 VACUUM PROCESSING APPARATUS AND OPERATING METHOD FOR VACUUM PROCESSING APPARATUS 失效
标题翻译：真空加工设备的真空处理设备和操作方法
公开(公告)号：US20100310785A1
公开(公告)日：2010-12-09
申请号：US12864624
申请日：2008-06-27
申请人： Eishiro Sasakawa , Masahiro Sakaki , Shigekazu Ueno , Keisuke Kawamura , Akemi Takano
发明人： Eishiro Sasakawa , Masahiro Sakaki , Shigekazu Ueno , Keisuke Kawamura , Akemi Takano
IPC分类号： C23C16/00 , B05C11/00 , B05D3/00
CPC分类号： C23C16/4401 , C23C16/4404 , C23C16/4405 , H01J37/3244 , H01J37/32449 , H01J37/32862
摘要： It is an object of the invention to provide a vacuum processing apparatus that enables setting a timing interval between self-cleaning procedures simply and so as to have general-use, enables significantly lengthening this timing interval, and improves the production efficiency. In a plasma CVD apparatus (100) that carries out self-cleaning procedure by feeding a cleaning gas into a film deposition chamber (1) in which film deposition processing is carried out on a substrate (4), the timing interval between self-cleaning procedures is set in a range in which a film deposition operating time ratio (Ps) is converged with respect to an increase in a film deposition process amount, where the film deposition operating time ratio (Ps) is represented by the proportion of a film deposition-related operating time (Tt) in the sum of the film deposition-related operating time (Tt) and a cleaning-related operating time (Tc).
摘要翻译：本发明的目的是提供一种真空处理装置，其能够简单地设定自清洁程序之间的定时间隔，从而具有通用性，能够显着延长该定时间隔，并提高生产效率。在通过将清洁气体供给到在基板（4）上进行成膜处理的成膜室（1）中进行自清洁处理的等离子体CVD装置（100）中，自清洁程序设定在相对于膜沉积处理量的增加而成膜沉积操作时间比（Ps）收敛的范围，其中成膜操作时间比（Ps）由膜沉积的比例相关的操作时间（Tt）与膜沉积相关操作时间（Tt）和清洁相关操作时间（Tc）之和。

3. 发明授权

US07205034B2 Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus 有权
标题翻译：用于等离子体化学气相沉积装置的用于在大表面积上产生均匀的高频等离子体的方法和装置
公开(公告)号：US07205034B2
公开(公告)日：2007-04-17
申请号：US10494528
申请日：2002-10-29
申请人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
发明人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
IPC分类号： H05H1/24
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082
摘要： A plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. A first and a second power supply section are installed on both ends of the discharge electrode installed in a plasma chemical vapor deposition apparatus, and are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.
摘要翻译：一种等离子体产生装置，其通过安装在等离子体化学气相沉积装置中的非常高频（VHF）在大面积上均匀地产生等离子体。第一和第二电源部安装在安装在等离子体化学气相沉积装置中的放电电极的两端，并且被提供有交替的周期：第一周期，其中第一和第二电源部分接收高频相同的频率，以及接收不同的高频波的第二周期。以这种方式，等离子体产生的状态可以在每个周期中变化，并且当随时间平均时，使得在大的表面积上等离子体产生是均匀的。

4. 发明申请

US20050255255A1 Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus 有权
标题翻译：用于等离子体化学气相沉积装置的用于在大表面积上产生均匀的高频等离子体的方法和装置
公开(公告)号：US20050255255A1
公开(公告)日：2005-11-17
申请号：US10494528
申请日：2002-10-29
申请人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
发明人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
IPC分类号： C23C16/509 , H01J37/32 , H05H1/24 , C23C16/00
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082
摘要： This invention relates a plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. The present invention installs a first and a second power supply section on both ends of the discharge electrode installed in plasma chemical vapor deposition apparatus, which are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.
摘要翻译：本发明涉及一种等离子体生成装置，其用于通过安装在等离子体化学气相沉积装置中的非常高频（VHF）在大面积上均匀地产生等离子体。本发明在安装在等离子体化学气相沉积装置中的放电电极的两端安装第一和第二电源部分，该等离子体化学气相沉积装置被提供有交替的周期：第一和第二电源部分接收高频波相同的频率，以及接收不同的高频波的第二周期。以这种方式，等离子体产生的状态可以在每个周期中变化，并且当随时间平均时，使得在大的表面积上等离子体产生是均匀的。

5. 发明授权

US07319295B2 High-frequency power supply structure and plasma CVD device using the same 失效
标题翻译：高频电源结构和等离子体CVD装置使用相同
公开(公告)号：US07319295B2
公开(公告)日：2008-01-15
申请号：US10506544
申请日：2003-03-13
申请人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
发明人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
IPC分类号： H01J7/24
CPC分类号： H01J37/32577 , H01J37/32082
摘要： A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.
摘要翻译：提供射频电源结构和包括该射频电源结构的等离子体CVD装置，其中RF电缆连接到电极的连接部分处的射频功率的反射减小，使得射频功率进入电极的入射增加。在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中，射频电源结构从RF电缆向射频电源供给射频电力，RF电缆为位于由电极形成的平面的延伸平面上，以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。由此，连接部的阻抗变化减小，连接部处的射频功率的反射减小，电极的射频功率的增加，成膜和表面处理的效率提高。

6. 发明申请

US20050127844A1 High-frequency power supply structure and plasma cvd device using the same 失效
标题翻译：高频电源结构和等离子cvd设备使用相同
公开(公告)号：US20050127844A1
公开(公告)日：2005-06-16
申请号：US10506544
申请日：2003-03-13
申请人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
发明人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
IPC分类号： C23C16/509 , H01J37/32 , H01L21/205 , H01J7/24
CPC分类号： H01J37/32577 , H01J37/32082
摘要： A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.
摘要翻译：提供射频电源结构和包括该射频电源结构的等离子体CVD装置，其中RF电缆连接到电极的连接部分处的射频功率的反射减小，使得射频功率进入电极的入射增加。在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中，射频电源结构从RF电缆向射频电源供给射频电力，RF电缆为位于由电极形成的平面的延伸平面上，以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。由此，连接部的阻抗变化减小，连接部处的射频功率的反射减小，电极的射频功率的增加，成膜和表面处理的效率提高。

7. 发明授权

US08482744B2 Thin-film inspection apparatus and method therefor 失效
标题翻译：薄膜检查装置及其方法
公开(公告)号：US08482744B2
公开(公告)日：2013-07-09
申请号：US13120295
申请日：2009-07-02
申请人： Satoshi Sakai , Youji Nakano , Yasuyuki Kobayashi , Kengo Yamaguchi , Akemi Takano
发明人： Satoshi Sakai , Youji Nakano , Yasuyuki Kobayashi , Kengo Yamaguchi , Akemi Takano
IPC分类号： G01B11/28
CPC分类号： G01B11/0625
摘要： A thin-film inspection apparatus calculates a film thickness of a first transparent thin film and a second transparent thin film of an inspection-target substrate including the first and second transparent thin films and a transparent conductive film on a transparent glass substrate. The apparatus has a storage section storing at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum; a light irradiation section irradiating the inspection-target substrate with white light through the transparent glass substrate; a light receiving section receiving light reflected from the inspection-target substrate; and an arithmetic section obtaining measurement values of the feature values stored in the storage section from the spectral reflectance spectrum based on the reflected light received by the light receiving section, and calculating the film thickness of each of the first transparent thin film and the second transparent thin film.
摘要翻译：薄膜检查装置在透明玻璃基板上计算包括第一透明薄膜和第二透明薄膜的透明导电薄膜的检查对象基板的第一透明薄膜和第二透明薄膜的膜厚。该装置具有存储至少两个特征值特性的存储部分，其中从光谱反射光谱中的特征值中选择的至少两个特征值; 光照射部，通过透明玻璃基板照射检查对象基板的白色光; 接收从检查对象基板反射的光的受光部; 以及算术部，基于由所述受光部所接收的反射光，从所述光谱反射率光谱求出存储在所述存储部中的特征量的测量值，并且计算所述第一透明薄膜和所述第二透明薄膜薄膜。

8. 发明授权

US07956999B2 Resistivity testing method and device therefor 有权
标题翻译：电阻率测试方法及其设备
公开(公告)号：US07956999B2
公开(公告)日：2011-06-07
申请号：US12934717
申请日：2009-07-02
申请人： Satoshi Sakai , Akemi Takano , Yasuyuki Kobayashi , Kengo Yamaguchi
发明人： Satoshi Sakai , Akemi Takano , Yasuyuki Kobayashi , Kengo Yamaguchi
IPC分类号： G01J4/00 , G01B11/28
CPC分类号： G01N21/9501 , G01N21/3563 , G01N21/55 , G01N21/8422 , G01R31/2831 , H01L31/1884 , Y10T29/53126
摘要： An object is to efficiently measure the resistivity of a transparent conductive film with high accuracy in a non-destructive and non-contact manner. Provided is a resistivity testing device that includes a light emitting device that emits p-polarized emission light having a wavelength selected by a preliminarily performed test-condition selecting method toward a transparent conductive film, formed on a light-transmissive substrate conveyed along a manufacturing line, from a film-surface side at an incidence angle selected by the method; a light detecting device that detects reflected light reflected at the transparent conductive film; and an information processor that calculates an evaluation value related to the amount of light of the reflected light with respect to the wavelength on the basis of the intensity of the detected light and obtains a resistivity from the calculated evaluation value by using a correlation characteristic in which the evaluation value and the resistivity are associated with each other in advance.
摘要翻译：目的是以非破坏性和非接触的方式高精度地有效地测量透明导电膜的电阻率。提供了一种电阻率测试装置，其包括：发光装置，其将具有通过预先进行的测试条件选择方法选择的波长的p偏振发射光朝向透明导电膜形成，所述透明导电膜形成在沿着制造线传送的透光基板从膜表面侧以该方法选择的入射角; 检测在透明导电膜上反射的反射光的光检测装置; 以及信息处理器，其基于所检测的光的强度来计算与所述反射光的相对于所述波长的光量相关的评价值，并且通过使用相关特性从所计算的评估值获得电阻率，其中，评估值和电阻率预先相互关联。

9. 发明授权

US08497991B2 Thin-film inspection apparatus and inspection method 失效
标题翻译：薄膜检验仪器及检验方法
公开(公告)号：US08497991B2
公开(公告)日：2013-07-30
申请号：US13120319
申请日：2009-07-02
申请人： Satoshi Sakai , Kohei Kawazoe , Kengo Yamaguchi , Akemi Takano
发明人： Satoshi Sakai , Kohei Kawazoe , Kengo Yamaguchi , Akemi Takano
IPC分类号： G01N21/47 , G01N21/00
CPC分类号： G01N21/8422 , G01B11/06 , G01B11/30 , G01N2021/8928
摘要： An object is to reduce the effect of a film thickness variation on the substrate surface of a thin film and improve the measuring accuracy. Provided are a light source that radiates single-wavelength light to an inspection-target substrate (W), which is formed by forming a thin film on a glass substrate from the glass substrate side; a light receiving element that is disposed such that the light receiving axis intersects with the optical axis of illumination light emitted from the light source at a predetermined inclination angle and that receives diffused transmitted light that has been transmitted through the inspection-target substrate W; and a computer (7) that obtains a haze ratio of the thin film on the basis of the intensity of the light received by the light receiving element. The computer (7) has a haze ratio characteristic made by associating the haze ratio and the light intensity of the diffused transmitted light and obtains a haze ratio by using the haze ratio characteristic and the light intensity received by the light receiving element.
摘要翻译：目的是减少薄膜的薄膜厚度变化对薄膜的基板表面的影响，提高测量精度。提供了通过从玻璃基板侧在玻璃基板上形成薄膜而将单波长光照射到检查对象基板（W）的光源，光接收元件被设置为使得光接收轴线以与预定倾斜角度从光源发射的照明光的光轴相交并且接收已经透射通过检查对象基板W的扩散透射光; 以及基于由光接收元件接收的光的强度来获得薄膜的雾度比的计算机（7）。计算机（7）具有通过使雾化率和扩散透射光的光强度相关联而获得的雾度比特性，并且通过使用由光接收元件接收的雾度比特性和光强度来获得雾度比。

10. 发明授权

US08088641B2 Process for producing photovoltaic device 失效
标题翻译：光电器件生产工艺
公开(公告)号：US08088641B2
公开(公告)日：2012-01-03
申请号：US12993252
申请日：2008-10-30
申请人： Hiroshi Mashima , Koichi Asakusa , Akemi Takano , Nobuki Yamashita , Yoshiaki Takeuchi
发明人： Hiroshi Mashima , Koichi Asakusa , Akemi Takano , Nobuki Yamashita , Yoshiaki Takeuchi
IPC分类号： H01L21/00 , H01L21/20 , H01L21/36 , C23C8/00
CPC分类号： H01L31/075 , H01L31/03762 , H01L31/0463 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.
摘要翻译：一种制造光电器件的方法，其中当在i型非晶硅层上提供n型非晶硅层时，可以在不降低沉积速率的情况下实现期望的结晶比。该制造方法包括沉积p型非晶硅层的p层形成步骤，在p型非晶硅层上沉积i型非晶硅层的i层形成步骤和n层形成在i型非晶硅层上沉积n型非晶硅层的步骤，其中n层形成步骤包括在i型非晶硅层上沉积第一n层的第一n层形成步骤，以及在第一n层上沉积第二n层的第二n层形成步骤，并且用于第一n层形成步骤的沉积条件是产生比第二n层的沉积条件更高的结晶比的条件层形成步骤，用于沉积到相同的基底材料基底上。

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