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1. 发明授权

US09761741B2 Film-forming material 有权
公开(公告)号：US09761741B2
公开(公告)日：2017-09-12
申请号：US13990916
申请日：2011-12-01
申请人： Kazuya Ebara , Hikaru Imamura , Rikimaru Sakamoto
发明人： Kazuya Ebara , Hikaru Imamura , Rikimaru Sakamoto
IPC分类号： H01L31/0216 , C08G12/26 , C08G18/80 , C08G18/38
CPC分类号： H01L31/02168 , C08G12/26 , C08G18/3851 , C08G18/8061 , Y02E10/50 , Y02E10/52
摘要： There is provided a novel material used for solar cells that can contribute to the improvement in maximum output of solar cells. A film-forming material for forming a light-collecting film on a transparent electrode of a solar cell, including an aromatic group-containing organic polymer compound (A), wherein the film-forming material exhibits an index of refraction of 1.5 to 2.0 at a wavelength of 633 nm and a transmittance of 95% or more with respect to light having a wavelength of 400 nm, and a solar cell obtained by coating a cured film made from the film-forming material on a surface of a transparent electrode.

2. 发明申请

US20130284262A1 FILM-FORMING MATERIAL 有权
标题翻译：成膜材料
公开(公告)号：US20130284262A1
公开(公告)日：2013-10-31
申请号：US13990916
申请日：2011-12-01
申请人： Kazuya Ebara , Hikaru Imamura , Rikimaru Sakamoto
发明人： Kazuya Ebara , Hikaru Imamura , Rikimaru Sakamoto
IPC分类号： H01L31/0216
CPC分类号： H01L31/02168 , C08G12/26 , C08G18/3851 , C08G18/8061 , Y02E10/50 , Y02E10/52
摘要： There is provided a novel material used for solar cells that can contribute to the improvement in maximum output of solar cells. A film-forming material for forming a light-collecting film on a transparent electrode of a solar cell, including an aromatic group-containing organic polymer compound (A), wherein the film-forming material exhibits an index of refraction of 1.5 to 2.0 at a wavelength of 633 nm and a transmittance of 95% or more with respect to light having a wavelength of 400 nm, and a solar cell obtained by coating a cured film made from the film-forming material on a surface of a transparent electrode.
摘要翻译：提供了用于太阳能电池的新型材料，其可以有助于提高太阳能电池的最大输出。一种在含有芳香族基团的有机高分子化合物（A）的太阳能电池的透明电极上形成聚光膜的成膜材料，其中，所述成膜材料的折射率为1.5〜2.0，波长为633nm，波长为400nm的光的透射率为95％以上，以及通过将由成膜材料制成的固化膜涂布在透明电极的表面上而得到的太阳能电池。

3. 发明申请

US20140004465A1 RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME 有权
标题翻译：抗静电膜形成组合物和使用其形成电阻图案的方法
公开(公告)号：US20140004465A1
公开(公告)日：2014-01-02
申请号：US14003480
申请日：2012-03-08
申请人： Ryuji Ohnishi , Takafumi Endo , Rikimaru Sakamoto
发明人： Ryuji Ohnishi , Takafumi Endo , Rikimaru Sakamoto
IPC分类号： G03F7/09 , G03F7/38
CPC分类号： G03F7/09 , C08G59/1455 , C08G59/4223 , G03F7/11 , G03F7/38
摘要： A resist underlayer film forming composition for lithography, includes: a polymer including a structure of formula (1) below at a terminal of a polymer chain; a cross-linking agent; a compound that promotes a cross-linking reaction; and an organic solvent: (where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched hydrocarbon group having a carbon atom number of 1 to 13, or a hydroxy group; at least one of R1, R2, and R3 is the hydrocarbon group; m and n are each independently 0 or 1; and a main chain of the polymer is bonded to a methylene group when n is 1 and bonded to a group represented by —O— when n is 0).
摘要翻译：用于光刻的抗蚀剂下层膜形成组合物包括：在聚合物链的末端包含下式（1）结构的聚合物; 交联剂; 促进交联反应的化合物; 和有机溶剂：（其中，R 1，R 2和R 3各自独立地为氢原子，碳原子数为1〜13的直链或支链烃基或羟基; R1，R2和 R3是烃基; m和n各自独立地为0或1;当n为1时，聚合物的主链与亚甲基结合，当n为0时，与-O - 表示的基团键合。

4. 发明授权

US08603731B2 Resist underlayer film forming composition for electron beam lithography 有权
标题翻译：用于电子束光刻的抗蚀下层成膜组合物
公开(公告)号：US08603731B2
公开(公告)日：2013-12-10
申请号：US12449737
申请日：2008-02-19
申请人： Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
发明人： Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
IPC分类号： G03F7/40 , H01L21/027 , G03F7/11
CPC分类号： G03F7/11 , G03F7/2059
摘要： There is provided a resist underlayer film forming composition for an electron beam lithography that is used in a device production process using electron beam lithography and is effective for reducing adverse effects caused by an electron beam to obtain a favorable resist pattern, and a method of forming a resist pattern using the resist underlayer film forming composition for electron beam lithography. The resist underlayer film forming composition for an electron beam lithography comprises a polymer compound having a repeating unit structure that contains a halogen atom, and a solvent, and the composition is applied in a form of film between a film to be processed for forming a transferring pattern on a substrate and a resist film for an electron beam lithography, and used for manufacturing a semiconductor device. The polymer compound preferably contains at least 10% by mass of a halogen atom.
摘要翻译：提供了一种用于电子束光刻的抗蚀剂下层膜形成组合物，其用于使用电子束光刻的器件制造工艺中，并且有效地减少由电子束引起的不利影响以获得良好的抗蚀剂图案，以及形成方法使用用于电子束光刻的抗蚀剂下层膜形成组合物的抗蚀剂图案。用于电子束光刻的抗蚀剂下层膜形成用组合物包括具有含有卤原子的重复单元结构的高分子化合物和溶剂，并且将组合物以薄膜形式施加在待加工的膜之间以形成转印衬底上的图案和用于电子束光刻的抗蚀剂膜，并用于制造半导体器件。高分子化合物优选含有至少10质量％的卤素原子。

5. 发明申请

US20100081081A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR ELECTRON BEAM LITHOGRAPHY 有权
标题翻译：用于电子束光刻的电阻膜形成组合物
公开(公告)号：US20100081081A1
公开(公告)日：2010-04-01
申请号：US12449737
申请日：2008-02-19
申请人： Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
发明人： Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/11 , G03F7/2059
摘要： There is provided a resist underlayer film forming composition for an electron beam lithography that is used in a device production process using electron beam lithography and is effective for reducing adverse effects caused by an electron beam to obtain a favorable resist pattern, and a method of forming a resist pattern using the resist underlayer film forming composition for electron beam lithography. The resist underlayer film forming composition for an electron beam lithography comprises a polymer compound having a repeating unit structure that contains a halogen atom, and a solvent, and the composition is applied in a form of film between a film to be processed for forming a transferring pattern on a substrate and a resist film for an electron beam lithography, and used for manufacturing a semiconductor device. The polymer compound preferably contains at least 10% by mass of a halogen atom.
摘要翻译：提供了一种用于电子束光刻的抗蚀剂下层膜形成组合物，其用于使用电子束光刻的器件制造工艺中，并且有效地减少由电子束引起的不利影响以获得良好的抗蚀剂图案，以及形成方法使用用于电子束光刻的抗蚀剂下层膜形成组合物的抗蚀剂图案。用于电子束光刻的抗蚀剂下层膜形成用组合物包括具有含有卤原子的重复单元结构的高分子化合物和溶剂，并且将组合物以薄膜形式施加在待加工的膜之间以形成转印衬底上的图案和用于电子束光刻的抗蚀剂膜，并用于制造半导体器件。高分子化合物优选含有至少10质量％的卤素原子。

6. 发明授权

US07425399B2 Composition for forming anti-reflective coating for use in lithography 有权
标题翻译：用于形成用于光刻的抗反射涂层的组合物
公开(公告)号：US07425399B2
公开(公告)日：2008-09-16
申请号：US10530349
申请日：2003-10-08
申请人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Nakayama , Yasuo Kawamura
发明人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Nakayama , Yasuo Kawamura
IPC分类号： G03C1/825 , C07D251/30 , C07D251/72
CPC分类号： H01L21/0276 , G03F7/038 , G03F7/091 , Y10S430/106
摘要： There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.
摘要翻译：提供了一种用于形成用于抗反射涂层的抗反射涂层的组合物，其在用于制造半导体器件的波长处具有良好的吸收，其对光反射具有高保护效果，其具有高的干蚀刻速率与光致抗蚀剂层相比。具体地，用于形成抗反射涂层的组合物含有在氮原子上具有羟烷基结构作为取代基的三嗪三酮化合物，低聚物化合物或高分子化合物。

7. 发明授权

US11675269B2 Composition for forming resist overlayer film for EUV lithography 有权
公开(公告)号：US11675269B2
公开(公告)日：2023-06-13
申请号：US13880470
申请日：2011-09-15
申请人： Rikimaru Sakamoto , Bangching Ho , Takafumi Endo
发明人： Rikimaru Sakamoto , Bangching Ho , Takafumi Endo
IPC分类号： G03F7/11 , C08L61/06 , C08G8/08 , C09D161/06 , G03F7/09 , C08G8/24 , C09D5/00 , C08F12/24 , C08F212/14
CPC分类号： G03F7/11 , C08G8/08 , C08G8/24 , C08L61/06 , C09D5/00 , C09D161/06 , G03F7/091 , C08F12/24 , C08F212/24 , C08F212/32 , C08F212/24 , C08F220/06
摘要： There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.

8. 发明申请

US20130230809A1 RESIST UNDERLAYER FILM FORMING COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING THE SAME 有权
标题翻译：抗静电膜形成组合物，以及使用其形成电阻图案的方法
公开(公告)号：US20130230809A1
公开(公告)日：2013-09-05
申请号：US13884132
申请日：2011-11-11
申请人： Rikimaru Sakamoto , Noriaki Fujitani , Takafumi Endo , Ryuji Ohnishi , BangChing Ho
发明人： Rikimaru Sakamoto , Noriaki Fujitani , Takafumi Endo , Ryuji Ohnishi , BangChing Ho
IPC分类号： G03F7/00 , C08L67/04
CPC分类号： G03F7/00 , C08L67/04 , G03F7/11
摘要： There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond.
摘要翻译：提供了一种用于形成抗蚀剂下层膜的组合物，即使该组合物含有苯环等芳香环，也具有高的干蚀刻选择性，并且可用于降低在EUV（波长 13.5 nm）光刻。此外，另一个目的是获得一种形成抗蚀剂下层膜的组合物，其在抗蚀剂下层膜上提供具有所需形状的抗蚀剂图案。一种用于光刻的抗蚀剂下层膜成膜组合物，其包括聚合物和溶剂，其中在聚合物中，二苯基砜或其衍生物通过醚键引入聚合物的主链中。

9. 发明申请

US20110230058A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM WITH REDUCED OUTGASSING 审中-公开
标题翻译：用于形成抗降水膜的组合物
公开(公告)号：US20110230058A1
公开(公告)日：2011-09-22
申请号：US13131474
申请日：2009-11-19
申请人： Rikimaru Sakamoto , Bangching Ho , Takafumi Endo
发明人： Rikimaru Sakamoto , Bangching Ho , Takafumi Endo
IPC分类号： H01L21/31 , G03F7/20 , C08G73/06 , C08F224/00 , C09D179/04 , C09D163/00
CPC分类号： G03F7/091 , G03F7/093
摘要： There is provided underlayer films of high-energy radiation resists that are applied onto semiconductor substrates in a lithography process for producing semiconductor devices and that are used to prevent reflection, static electrification, and development defects and to suppress outgassing during the exposure of resist layers with high-energy radiation. A composition for forming an underlayer film of a high-energy radiation resist, the composition comprising a film component having an aromatic ring structure or a hetero ring structure. The film component having an aromatic ring structure or a hetero ring structure is contained preferably in a film at a proportion of 5 to 85% by mass. The film component may be a compound having an aromatic ring structure or a hetero ring structure, and the compound may be a polymer or a polymer precursor including a specific repeating unit. The aromatic ring may be a benzene ring or fused benzene ring, and the hetero ring structure may be triazinetrione ring.
摘要翻译：在用于制造半导体器件的光刻工艺中提供施加到半导体衬底上的高能量辐射抗蚀剂的下层膜，其用于防止反射，静电带电和显影缺陷，并且在抗蚀剂层的曝光期间抑制除气高能辐射。一种用于形成高能量辐射抗蚀剂的下层膜的组合物，该组合物包含具有芳环结构或杂环结构的膜组分。具有芳环结构或杂环结构的膜组分优选以5-85质量％的比例包含在膜中。膜组分可以是具有芳环结构或杂环结构的化合物，并且该化合物可以是包含特定重复单元的聚合物或聚合物前体。芳环可以是苯环或稠合苯环，杂环结构可以是三嗪三酮环。

10. 发明申请

US20110059404A1 RESIST UNDERLAYER FILM FORMING COMPOSITION AND FORMING METHOD OF RESIST PATTERN USING THE SAME 有权
标题翻译：抗静电膜形成组合物和形成使用它的耐蚀图案的方法
公开(公告)号：US20110059404A1
公开(公告)日：2011-03-10
申请号：US12866831
申请日：2009-02-19
申请人： Rikimaru Sakamoto , Takafumi Endo
发明人： Rikimaru Sakamoto , Takafumi Endo
IPC分类号： G03F7/20 , G02F1/361
CPC分类号： G03F7/091 , C08G59/1455 , C08G63/20 , C08G63/42 , C08G63/668 , C08G63/6854
摘要： It is an object to provide a resist underlayer film forming composition having a large selection ratio of a dry etching rate, and having a k value and an n value at a short wavelength such as an ArF excimer laser, both of which exhibit desired values. There is provided a resist underlayer film forming composition containing a polymer obtained by reacting at least a tetracarboxylic dianhydride having an alicyclic structure or an aliphatic structure and a diepoxy compound having two epoxy groups with an organic solvent containing an alcohol-based compound having an OH group, and a solvent.
摘要翻译：本发明的目的是提供一种抗蚀剂下层膜形成组合物，其具有大的干蚀刻速率选择比，并且在诸如ArF准分子激光器的短波长处具有k值和n值，这两者都表现出期望的值。提供一种抗蚀剂下层膜形成组合物，其含有通过使至少具有脂环结构或脂肪族结构的四羧酸二酐和具有两个环氧基的二环氧化合物与含有具有OH基的醇系化合物的有机溶剂反应而获得的聚合物，和溶剂。

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