专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07833681B2 Mask blank and mask 有权
标题翻译：面具空白和面具
公开(公告)号：US07833681B2
公开(公告)日：2010-11-16
申请号：US11898587
申请日：2007-09-13
申请人： Masahiro Hashimoto , Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
发明人： Masahiro Hashimoto , Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
IPC分类号： G03F1/00 , G03F1/08
CPC分类号： G03F1/50 , G03F1/78 , G03F7/11
摘要： A mask blank is equipped with a thin film that forms a mask pattern formed on a substrate and a chemically amplified type resist film that is formed above the thin film. In the mask blank, a protective film that prevents movement of a substance that inhibits a chemical amplification function of the resist film from a bottom portion of the resist film to inside the resist film is provided between the thin film and the resist film. The mask blank suppresses the error of the line width dimension of the transfer pattern formed on the substrate to the design dimension of the transfer pattern line width of the transfer mask (actual dimension error) and also suppress linearity up to 10 nm.
摘要翻译：掩模坯料配备有形成在基板上形成的掩模图案的薄膜和形成在薄膜上方的化学放大型抗蚀剂膜。在掩模坯料中，在薄膜和抗蚀剂膜之间设置防止从抗蚀剂膜的底部到抗蚀剂膜内部阻止抗蚀剂膜的化学放大功能的物质的移动的保护膜。掩模坯料将形成在基板上的转印图案的线宽尺寸的误差抑制为转印掩模的转印图案线宽度的设计尺寸（实际尺寸误差），并且还抑制高达10nm的线性度。

2. 发明授权

US08603731B2 Resist underlayer film forming composition for electron beam lithography 有权
标题翻译：用于电子束光刻的抗蚀下层成膜组合物
公开(公告)号：US08603731B2
公开(公告)日：2013-12-10
申请号：US12449737
申请日：2008-02-19
申请人： Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
发明人： Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
IPC分类号： G03F7/40 , H01L21/027 , G03F7/11
CPC分类号： G03F7/11 , G03F7/2059
摘要： There is provided a resist underlayer film forming composition for an electron beam lithography that is used in a device production process using electron beam lithography and is effective for reducing adverse effects caused by an electron beam to obtain a favorable resist pattern, and a method of forming a resist pattern using the resist underlayer film forming composition for electron beam lithography. The resist underlayer film forming composition for an electron beam lithography comprises a polymer compound having a repeating unit structure that contains a halogen atom, and a solvent, and the composition is applied in a form of film between a film to be processed for forming a transferring pattern on a substrate and a resist film for an electron beam lithography, and used for manufacturing a semiconductor device. The polymer compound preferably contains at least 10% by mass of a halogen atom.
摘要翻译：提供了一种用于电子束光刻的抗蚀剂下层膜形成组合物，其用于使用电子束光刻的器件制造工艺中，并且有效地减少由电子束引起的不利影响以获得良好的抗蚀剂图案，以及形成方法使用用于电子束光刻的抗蚀剂下层膜形成组合物的抗蚀剂图案。用于电子束光刻的抗蚀剂下层膜形成用组合物包括具有含有卤原子的重复单元结构的高分子化合物和溶剂，并且将组合物以薄膜形式施加在待加工的膜之间以形成转印衬底上的图案和用于电子束光刻的抗蚀剂膜，并用于制造半导体器件。高分子化合物优选含有至少10质量％的卤素原子。

3. 发明申请

US20100081081A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR ELECTRON BEAM LITHOGRAPHY 有权
标题翻译：用于电子束光刻的电阻膜形成组合物
公开(公告)号：US20100081081A1
公开(公告)日：2010-04-01
申请号：US12449737
申请日：2008-02-19
申请人： Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
发明人： Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/11 , G03F7/2059
摘要： There is provided a resist underlayer film forming composition for an electron beam lithography that is used in a device production process using electron beam lithography and is effective for reducing adverse effects caused by an electron beam to obtain a favorable resist pattern, and a method of forming a resist pattern using the resist underlayer film forming composition for electron beam lithography. The resist underlayer film forming composition for an electron beam lithography comprises a polymer compound having a repeating unit structure that contains a halogen atom, and a solvent, and the composition is applied in a form of film between a film to be processed for forming a transferring pattern on a substrate and a resist film for an electron beam lithography, and used for manufacturing a semiconductor device. The polymer compound preferably contains at least 10% by mass of a halogen atom.
摘要翻译：提供了一种用于电子束光刻的抗蚀剂下层膜形成组合物，其用于使用电子束光刻的器件制造工艺中，并且有效地减少由电子束引起的不利影响以获得良好的抗蚀剂图案，以及形成方法使用用于电子束光刻的抗蚀剂下层膜形成组合物的抗蚀剂图案。用于电子束光刻的抗蚀剂下层膜形成用组合物包括具有含有卤原子的重复单元结构的高分子化合物和溶剂，并且将组合物以薄膜形式施加在待加工的膜之间以形成转印衬底上的图案和用于电子束光刻的抗蚀剂膜，并用于制造半导体器件。高分子化合物优选含有至少10质量％的卤素原子。

4. 发明申请

US20080070132A1 Mask blank and mask 有权
标题翻译：面具空白和面具
公开(公告)号：US20080070132A1
公开(公告)日：2008-03-20
申请号：US11898587
申请日：2007-09-13
申请人： Masahiro Hashimoto , Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
发明人： Masahiro Hashimoto , Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
IPC分类号： G03F1/00
CPC分类号： G03F1/50 , G03F1/78 , G03F7/11
摘要： A mask blank is equipped with a thin film that forms a mask pattern formed on a substrate and a chemically amplified type resist film that is formed above the thin film. In the mask blank, a protective film that prevents movement of a substance that inhibits a chemical amplification function of the resist film from a bottom portion of the resist film to inside the resist film is provided between the thin film and the resist film. The mask blank suppresses the error of the line width dimension of the transfer pattern formed on the substrate to the design dimension of the transfer pattern line width of the transfer mask (actual dimension error) and also suppress linearity up to 10 nm.
摘要翻译：掩模坯料配备有形成在基板上形成的掩模图案的薄膜和形成在薄膜上方的化学放大型抗蚀剂膜。在掩模坯料中，在薄膜和抗蚀剂膜之间设置防止从抗蚀剂膜的底部到抗蚀剂膜内部阻止抗蚀剂膜的化学放大功能的物质的移动的保护膜。掩模坯料将形成在基板上的转印图案的线宽尺寸的误差抑制为转印掩模的转印图案线宽度的设计尺寸（实际尺寸误差），并且还抑制高达10nm的线性度。

5. 发明申请

US20070190459A1 Resist underlayer coating forming composition for mask blank, mask blank and mask 有权
标题翻译：用于掩模毛坯，掩模毛坯和掩模的抗蚀剂下层涂料形成组合物
公开(公告)号：US20070190459A1
公开(公告)日：2007-08-16
申请号：US11703723
申请日：2007-02-08
申请人： Masahiro Hashimoto , Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
发明人： Masahiro Hashimoto , Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
IPC分类号： G03F1/00
CPC分类号： G03F7/11 , G03F1/38 , G03F1/80
摘要： There is provided a resist underlayer coating forming composition used in processes for manufacturing a mask blank and a mask, and a mask blank and a mask manufactured from the composition. The resist underlayer coating forming composition comprises a polymer compound having a halogen atom-containing repeating structural unit and a solvent. In a mask blank including a thin film for forming transfer pattern and a chemically-amplified type resist coating on a substrate in that order, the composition is used for forming a resist underlayer coating between the thin film for forming transfer pattern and the resist coating. The polymer compound is preferably a compound containing a halogen atom in an amount of at least 10 mass %.
摘要翻译：提供了用于制造掩模坯料和掩模的方法中的抗蚀剂下层涂层形成组合物，以及由该组合物制造的掩模坯料和掩模。抗蚀剂下层涂层形成组合物包含具有含卤原子的重复结构单元和溶剂的高分子化合物。在包括用于形成转印图案的薄膜和基板上的化学放大型抗蚀剂涂层的掩模坯料中，该组合物用于在用于形成转印图案的薄膜和抗蚀剂涂层之间形成抗蚀剂下层涂层。高分子化合物优选为含有至少10质量％的卤素原子的化合物。

6. 发明授权

US07736822B2 Resist underlayer coating forming composition for mask blank, mask blank and mask 有权
标题翻译：用于掩模毛坯，掩模毛坯和掩模的抗蚀剂下层涂料形成组合物
公开(公告)号：US07736822B2
公开(公告)日：2010-06-15
申请号：US11703723
申请日：2007-02-08
申请人： Masahiro Hashimoto , Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
发明人： Masahiro Hashimoto , Tomoyuki Enomoto , Takahiro Sakaguchi , Rikimaru Sakamoto , Masaki Nagai
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/11 , G03F1/38 , G03F1/80
摘要： There is provided a resist underlayer coating forming composition used in processes for manufacturing a mask blank and a mask, and a mask blank and a mask manufactured from the composition. The resist underlayer coating forming composition comprises a polymer compound having a halogen atom-containing repeating structural unit and a solvent. In a mask blank including a thin film for forming transfer pattern and a chemically-amplified type resist coating on a substrate in that order, the composition is used for forming a resist underlayer coating between the thin film for forming transfer pattern and the resist coating. The polymer compound is preferably a compound containing a halogen atom in an amount of at least 10 mass %.
摘要翻译：提供了用于制造掩模坯料和掩模的方法中的抗蚀剂下层涂层形成组合物，以及由该组合物制造的掩模坯料和掩模。抗蚀剂下层涂层形成组合物包含具有含卤原子的重复结构单元和溶剂的高分子化合物。在包括用于形成转印图案的薄膜和基板上的化学放大型抗蚀剂涂层的掩模坯料中，该组合物用于在用于形成转印图案的薄膜和抗蚀剂涂层之间形成抗蚀剂下层涂层。高分子化合物优选为含有至少10质量％的卤素原子的化合物。

7. 发明授权

US06855845B2 Process for the preparing bromoisophithalic acid compound 失效
标题翻译：制备溴代间苯二甲酸化合物的方法
公开(公告)号：US06855845B2
公开(公告)日：2005-02-15
申请号：US10296500
申请日：2001-05-30
申请人： Masaki Nagai , Hideo Suzuki , Isao Hashiba
发明人： Masaki Nagai , Hideo Suzuki , Isao Hashiba
IPC分类号： C07C51/363 , C07C67/307 , C07C69/76 , C07C51/42 , C07C63/313
CPC分类号： C07C51/363 , C07C67/307 , C07C63/68 , C07C69/80
摘要： The present invention relates to a process for preparing bromoisophthalic acid compounds, particularly 5-bromoisophthalic acid compounds and 4,5-dibromoisophthalic acid compounds comprising brominating an isophthalic acid compound of the general formula (1) wherein R1 and R2 independently of one another are hydrogen atom or C1-6 alkyl, with bromine in a solvent containing sulfur trioxide. The object of the invention is to provide a process for preparing bromoisophthalic acid compounds, particularly 5-bromoisophthalic acid compounds and 4,5-dibromoisophthalic acid compounds in a highly selective manner by using bromine that is industrially inexpensive.
摘要翻译：本发明涉及一种制备溴代间苯二甲酸化合物，特别是5-溴代间苯二甲酸化合物和4,5-二溴间苯二甲酸化合物的方法，其包括将通式（1）的间苯二甲酸化合物溴化，其中R 1和R 2均为彼此是氢原子或C 1-6烷基，溴在含有三氧化硫的溶剂中。本发明的目的是提供一种通过使用工业上便宜的溴以高度选择性的方式制备溴代间苯二甲酸化合物，特别是5-溴代间苯二甲酸化合物和4,5-二溴间苯二甲酸化合物的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式