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1. 发明授权

US08648431B2 Acoustic semiconductor device 失效
标题翻译：声学半导体器件
公开(公告)号：US08648431B2
公开(公告)日：2014-02-11
申请号：US13220116
申请日：2011-08-29
申请人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
发明人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
IPC分类号： H01L29/84
CPC分类号： H03J3/20 , H03B5/326 , H03H9/02566
摘要： According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.
摘要翻译：根据一个实施例，声学半导体器件包括元件单元和第一端子。元件单元包括声共振单元。声共振单元包括半导体晶体。声驻波在声共振单元中是可兴奋的，并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。第一端子电连接到元件单元。从输出和输入电信号中选出的至少一个可经由第一终端实现。电信号与电荷密度耦合。输出电信号来自声共振单元，并且输入电信号进入声共振单元。

2. 发明申请

US20120241877A1 ACOUSTIC SEMICONDUCTOR DEVICE 失效
标题翻译：声学半导体器件
公开(公告)号：US20120241877A1
公开(公告)日：2012-09-27
申请号：US13220116
申请日：2011-08-29
申请人： Kazuhide ABE , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
发明人： Kazuhide ABE , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
IPC分类号： H01L29/84
CPC分类号： H03J3/20 , H03B5/326 , H03H9/02566
摘要： According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.
摘要翻译：根据一个实施例，声学半导体器件包括元件单元和第一端子。元件单元包括声共振单元。声共振单元包括半导体晶体。声驻波在声共振单元中是可兴奋的，并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。第一端子电连接到元件单元。从输出和输入电信号中选出的至少一个可经由第一终端实现。电信号与电荷密度耦合。输出电信号来自声共振单元，并且输入电信号进入声共振单元。

3. 发明授权

US08324707B2 Power amplifier 失效
标题翻译：功率放大器
公开(公告)号：US08324707B2
公开(公告)日：2012-12-04
申请号：US13050545
申请日：2011-03-17
申请人： Tadahiro Sasaki , Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya
发明人： Tadahiro Sasaki , Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya
IPC分类号： H01L27/105
CPC分类号： H01L27/088 , H01L21/823493 , H01L27/0207 , H01L27/0922 , H01L29/41758 , H01L29/4238 , H01L29/78
摘要： According to an embodiment, a power amplifier is provided with at least one first growth ring gate structure and multiple second growth ring gate structures. The first growth ring gate structure is bounded by a semiconductor layer and performs a power amplification operation. The multiple second growth ring gate structures are bounded by the semiconductor layer and are arranged adjacently around the first growth ring gate structure in a surrounding manner. When the first growth ring gate structure performs a power amplification operation, the multiple second growth ring gate structures are depleted by applying a reverse bias to the multiple second growth ring gate structures whereby the depleted multiple second growth ring gate structures isolate the first growth ring gate structure from a surrounding portion.
摘要翻译：根据实施例，功率放大器设置有至少一个第一增长环栅极结构和多个第二增长环栅极结构。第一生长环栅极结构由半导体层限制并进行功率放大操作。多个第二生长环形栅极结构由半导体层限制，并且以周围的方式围绕第一生长环栅极结构相邻布置。当第一生长环栅极结构执行功率放大操作时，通过向多个第二生长环栅极结构施加反向偏压来耗尽多个第二生长环栅结构，由此耗尽的多个第二生长环栅极结构将第一生长环栅极隔离结构从周围部分。

4. 发明授权

US08513715B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08513715B2
公开(公告)日：2013-08-20
申请号：US12873788
申请日：2010-09-01
申请人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya
发明人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L29/41758 , H01L29/4238 , H03B5/326
摘要： According to an embodiment, the present invention provides a semiconductor device that is easily integrated with other electronic circuits and functions as an oscillator with high frequency accuracy. The semiconductor device includes: a semiconductor substrate; an element region; an element isolation region that surrounds the element region; a field effect transistor including a gate electrode that is formed on the element region, source and drain regions, and a channel region that is interposed between the source region and the drain region; gate, source, and drain terminals that are used to apply a voltage to the gate electrode, the source region, and the drain region, respectively; and an output terminal that is electrically connected to the channel region. When the threshold voltage of the field effect transistor is Vth, a gate voltage Vgs applied between the source terminal and the gate terminal and a drain voltage Vds applied between the source terminal and the drain terminal satisfy the following relationship: Vth
摘要翻译：根据实施例，本发明提供一种与其他电子电路容易集成并且作为高频精度的振荡器起作用的半导体器件。半导体器件包括：半导体衬底; 元素区域围绕元件区域的元件隔离区域; 场效应晶体管，其包括形成在所述元件区域，源极和漏极区域上的栅极电极以及介于所述源极区域和所述漏极区域之间的沟道区域; 栅极，源极和漏极端子，分别用于向栅极电极，源极区域和漏极区域施加电压; 以及电连接到沟道区的输出端子。当场效应晶体管的阈值电压为Vth时，施加在源极端子和栅极端子之间的栅极电压Vgs和施加在源极端子和漏极端子之间的漏极电压Vds满足以下关系：Vth

5. 发明申请

US20120061768A1 POWER AMPLIFIER 失效
标题翻译：功率放大器
公开(公告)号：US20120061768A1
公开(公告)日：2012-03-15
申请号：US13050545
申请日：2011-03-17
申请人： Tadahiro SASAKI , Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya
发明人： Tadahiro SASAKI , Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya
IPC分类号： H01L27/092
CPC分类号： H01L27/088 , H01L21/823493 , H01L27/0207 , H01L27/0922 , H01L29/41758 , H01L29/4238 , H01L29/78
摘要： According to an embodiment, a power amplifier is provided with at least one first growth ring gate structure and multiple second growth ring gate structures. The first growth ring gate structure is bounded by a semiconductor layer and performs a power amplification operation. The multiple second growth ring gate structures are bounded by the semiconductor layer and are arranged adjacently around the first growth ring gate structure in a surrounding manner. When the first growth ring gate structure performs a power amplification operation, the multiple second growth ring gate structures are depleted by applying a reverse bias to the multiple second growth ring gate structures whereby the depleted multiple second growth ring gate structures isolate the first growth ring gate structure from a surrounding portion.
摘要翻译：根据实施例，功率放大器设置有至少一个第一增长环栅极结构和多个第二增长环栅极结构。第一生长环栅极结构由半导体层限制并进行功率放大操作。多个第二生长环形栅极结构由半导体层限制，并且以周围的方式围绕第一生长环栅极结构相邻布置。当第一生长环栅极结构执行功率放大操作时，通过向多个第二生长环栅极结构施加反向偏压来耗尽多个第二生长环栅结构，由此耗尽的多个第二生长环栅极结构将第一生长环栅极隔离结构从周围部分。

6. 发明申请

US20110220974A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110220974A1
公开(公告)日：2011-09-15
申请号：US12873788
申请日：2010-09-01
申请人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya
发明人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L29/41758 , H01L29/4238 , H03B5/326
摘要： According to an embodiment, the present invention provides a semiconductor device that is easily integrated with other electronic circuits and functions as an oscillator with high frequency accuracy. The semiconductor device includes: a semiconductor substrate; an element region; an element isolation region that surrounds the element region; a field effect transistor including a gate electrode that is formed on the element region, source and drain regions, and a channel region that is interposed between the source region and the drain region; gate, source, and drain terminals that are used to apply a voltage to the gate electrode, the source region, and the drain region, respectively; and an output terminal that is electrically connected to the channel region. When the threshold voltage of the field effect transistor is Vth, a gate voltage Vgs applied between the source terminal and the gate terminal and a drain voltage Vds applied between the source terminal and the drain terminal satisfy the following relationship: Vth
摘要翻译：根据实施例，本发明提供一种与其他电子电路容易集成并且作为高频精度的振荡器起作用的半导体器件。半导体器件包括：半导体衬底; 元素区域围绕元件区域的元件隔离区域; 场效应晶体管，其包括形成在所述元件区域，源极和漏极区域上的栅极电极以及介于所述源极区域和所述漏极区域之间的沟道区域; 栅极，源极和漏极端子，分别用于向栅极电极，源极区域和漏极区域施加电压; 以及电连接到沟道区的输出端子。当场效应晶体管的阈值电压为Vth时，施加在源极端子和栅极端子之间的栅极电压Vgs和施加在源极端子和漏极端子之间的漏极电压Vds满足以下关系：Vth

7. 发明申请

US20050059375A1 Voltage controlled oscillator, frequency synthesizer and communication apparatus 失效
标题翻译：压控振荡器，频率合成器和通讯装置
公开(公告)号：US20050059375A1
公开(公告)日：2005-03-17
申请号：US10890998
申请日：2004-07-15
申请人： Kazuhide Abe , Mayumi Morizuka , Ryoichi Ohara , Kenya Sano , Naoko Yanase , Takaaki Yasumoto , Tadahiro Sasaki , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Yoshida , Ryuichi Fujimoto , Keiichi Yamaguchi , Nobuyuki Itoh , Tooru Kozu , Takeshi Ookubo
发明人： Kazuhide Abe , Mayumi Morizuka , Ryoichi Ohara , Kenya Sano , Naoko Yanase , Takaaki Yasumoto , Tadahiro Sasaki , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Yoshida , Ryuichi Fujimoto , Keiichi Yamaguchi , Nobuyuki Itoh , Tooru Kozu , Takeshi Ookubo
IPC分类号： H03K3/354 , H03B1/00 , H03B5/30 , H03B5/32 , H03H9/17 , H03L7/08 , H03L7/089 , H03L7/099 , H03L7/10 , H03L7/113 , H03L7/18 , H03L7/187 , H03L7/199 , H04B1/06 , H04B7/00 , H04B17/00
CPC分类号： H03L7/099 , H03B5/326 , H03B2200/0012 , H03B2201/0208 , H03B2201/025 , H03L7/0891 , H03L7/10 , H03L7/113 , H03L7/18 , H03L7/199 , H03L2207/06
摘要： A voltage controlled oscillator includes a resonator configured to resonate with an initial oscillation frequency during starting period of oscillation and a steady oscillation frequency during a steady state oscillation. The resonator includes a film bulk acoustic resonator having a series resonance frequency higher than the steady oscillation frequency. A negative resistance circuit configured to drive the resonator, has a positive increment for reactance in the steady state oscillation compared with reactance in the starting period.
摘要翻译：压控振荡器包括谐振器，其构造成在振荡的起始周期期间与初始振荡频率谐振，并且在稳态振荡期间具有稳定的振荡频率。谐振器包括具有高于稳定振荡频率的串联谐振频率的膜体声波谐振器。配置为驱动谐振器的负电阻电路与起动周期中的电抗相比，在稳态振荡中具有正增量。

8. 发明授权

US07221920B2 Voltage controlled oscillator, frequency synthesizer and communication apparatus 失效
标题翻译：压控振荡器，频率合成器和通讯装置
公开(公告)号：US07221920B2
公开(公告)日：2007-05-22
申请号：US10890998
申请日：2004-07-15
申请人： Kazuhide Abe , Mayumi Morizuka , Ryoichi Ohara , Kenya Sano , Naoko Yanase , Takaaki Yasumoto , Tadahiro Sasaki , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Yoshida , Ryuichi Fujimoto , Keiichi Yamaguchi , Nobuyuki Itoh , Tooru Kozu , Takeshi Ookubo
发明人： Kazuhide Abe , Mayumi Morizuka , Ryoichi Ohara , Kenya Sano , Naoko Yanase , Takaaki Yasumoto , Tadahiro Sasaki , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Yoshida , Ryuichi Fujimoto , Keiichi Yamaguchi , Nobuyuki Itoh , Tooru Kozu , Takeshi Ookubo
IPC分类号： H04B1/06 , H04B7/00
CPC分类号： H03L7/099 , H03B5/326 , H03B2200/0012 , H03B2201/0208 , H03B2201/025 , H03L7/0891 , H03L7/10 , H03L7/113 , H03L7/18 , H03L7/199 , H03L2207/06
摘要： A voltage controlled oscillator includes a resonator configured to resonate with an initial oscillation frequency during starting period of oscillation and a steady oscillation frequency during a steady state oscillation. The resonator includes a film bulk acoustic resonator having a series resonance frequency higher than the steady oscillation frequency. A negative resistance circuit configured to drive the resonator, has a positive increment for reactance in the steady state oscillation compared with reactance in the starting period.
摘要翻译：压控振荡器包括谐振器，其构造成在振荡的起始时段期间与初始振荡频率谐振，并且在稳态振荡期间具有稳定的振荡频率。谐振器包括具有高于稳定振荡频率的串联谐振频率的膜体声波谐振器。配置为驱动谐振器的负电阻电路与起动周期中的电抗相比，在稳态振荡中具有正增量。

9. 发明授权

US09117931B2 Semiconductor device with a resonator using acoustic standing wave excited in semiconductor crystal 有权
标题翻译：具有在半导体晶体中激发的声驻波的谐振器的半导体器件
公开(公告)号：US09117931B2
公开(公告)日：2015-08-25
申请号：US13685859
申请日：2012-11-27
申请人： Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya , Junji Wadatsumi , Shouhei Kousai
发明人： Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya , Junji Wadatsumi , Shouhei Kousai
IPC分类号： H01L29/84 , H03H9/24 , H03H9/02
CPC分类号： H01L29/84 , H01L2924/1461 , H03H9/2405 , H03H2009/02314
摘要： A semiconductor device according to an embodiment has: a semiconductor substrate; an acoustic resonator formed on the semiconductor substrate, having a semiconductor layer including impurity electrically isolated from the substrate by depletion layer and configured to resonate at a predetermined resonance frequency based on acoustic standing wave excited in the semiconductor layer; a temperature detector formed on the semiconductor substrate and configured to detect temperature of the semiconductor substrate; a calculating unit formed on the semiconductor substrate and configured to perform calculation of temperature compensation based on the temperature detected by the temperature detector, kind of the impurity and concentration of the impurity; and a controller formed on the semiconductor substrate and configured to control the resonance frequency based on a result of the calculation by the calculating unit.
摘要翻译：根据实施例的半导体器件具有：半导体衬底; 形成在所述半导体衬底上的声谐振器，具有包括通过耗尽层与所述衬底电绝缘的杂质的半导体层，并且被配置为基于在所述半导体层中激发的声驻波以预定的谐振频率谐振; 温度检测器，形成在所述半导体衬底上，并被配置为检测所述半导体衬底的温度; 计算单元，其形成在所述半导体基板上，并且被配置为基于由所述温度检测器检测到的温度进行温度补偿的计算，所述杂质的种类和所述杂质的浓度; 以及控制器，其形成在所述半导体基板上，并且被配置为基于所述计算单元的计算结果来控制所述共振频率。

10. 发明授权

US07770274B2 Piezoelectric thin film device and method for manufacturing the same 失效
标题翻译：压电薄膜器件及其制造方法
公开(公告)号：US07770274B2
公开(公告)日：2010-08-10
申请号：US11946910
申请日：2007-11-29
申请人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H04R17/00
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.
摘要翻译：压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

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