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1. 发明申请

US20080258779A1 SEMICONDUCTOR INTEGRATED CIRCUIT 失效
标题翻译：半导体集成电路
公开(公告)号：US20080258779A1
公开(公告)日：2008-10-23
申请号：US12051026
申请日：2008-03-19
申请人： Junji Wadatsumi , Shouhei Kousai
发明人： Junji Wadatsumi , Shouhei Kousai
IPC分类号： H03K3/00
CPC分类号： G05F3/262 , H03F1/223 , H03F1/301 , H03F3/347 , H03F2200/294 , H03F2200/447 , H03F2200/453 , H03F2200/492 , H03F2200/78
摘要： A semiconductor integrated circuit, has a current source having one end connected to a power supply and outputting a reference current; a first MOS transistor having one end connected to an other end of the current source and being diode-connected; a second MOS transistor having a gate connected to a gate of the first MOS transistor and passing an output current obtained by current-mirroring the reference current; a first variable resistor connected between an other end of the first MOS transistor and a ground; a resistive component connected between an other end of the second MOS transistor and the ground; and a first operational amplifier fed with a first potential of the other end of the first MOS transistor and a second potential of the other end of the second MOS transistor and outputting a signal for controlling a resistance value of the first variable resistor to equalize the first potential and the second potential, wherein the resistance value of the first variable resistor is controlled based on the output signal of the first operational amplifier.
摘要翻译：一种半导体集成电路，具有一端与电源连接并输出参考电流的电流源; 第一MOS晶体管，其一端连接到电流源的另一端并被二极管连接; 第二MOS晶体管，其栅极连接到第一MOS晶体管的栅极，并且通过电流镜像参考电流而获得的输出电流; 连接在第一MOS晶体管的另一端和地之间的第一可变电阻器; 连接在第二MOS晶体管的另一端和地之间的电阻元件; 以及第一运算放大器，其馈送第一MOS晶体管的另一端的第一电位和第二MOS晶体管的另一端的第二电位，并输出用于控制第一可变电阻的电阻值的信号，以使第一MOS晶体管的第一电位和第二电位，其中基于第一运算放大器的输出信号来控制第一可变电阻器的电阻值。

2. 发明授权

US09117931B2 Semiconductor device with a resonator using acoustic standing wave excited in semiconductor crystal 有权
标题翻译：具有在半导体晶体中激发的声驻波的谐振器的半导体器件
公开(公告)号：US09117931B2
公开(公告)日：2015-08-25
申请号：US13685859
申请日：2012-11-27
申请人： Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya , Junji Wadatsumi , Shouhei Kousai
发明人： Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya , Junji Wadatsumi , Shouhei Kousai
IPC分类号： H01L29/84 , H03H9/24 , H03H9/02
CPC分类号： H01L29/84 , H01L2924/1461 , H03H9/2405 , H03H2009/02314
摘要： A semiconductor device according to an embodiment has: a semiconductor substrate; an acoustic resonator formed on the semiconductor substrate, having a semiconductor layer including impurity electrically isolated from the substrate by depletion layer and configured to resonate at a predetermined resonance frequency based on acoustic standing wave excited in the semiconductor layer; a temperature detector formed on the semiconductor substrate and configured to detect temperature of the semiconductor substrate; a calculating unit formed on the semiconductor substrate and configured to perform calculation of temperature compensation based on the temperature detected by the temperature detector, kind of the impurity and concentration of the impurity; and a controller formed on the semiconductor substrate and configured to control the resonance frequency based on a result of the calculation by the calculating unit.
摘要翻译：根据实施例的半导体器件具有：半导体衬底; 形成在所述半导体衬底上的声谐振器，具有包括通过耗尽层与所述衬底电绝缘的杂质的半导体层，并且被配置为基于在所述半导体层中激发的声驻波以预定的谐振频率谐振; 温度检测器，形成在所述半导体衬底上，并被配置为检测所述半导体衬底的温度; 计算单元，其形成在所述半导体基板上，并且被配置为基于由所述温度检测器检测到的温度进行温度补偿的计算，所述杂质的种类和所述杂质的浓度; 以及控制器，其形成在所述半导体基板上，并且被配置为基于所述计算单元的计算结果来控制所述共振频率。

3. 发明申请

US20110221532A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND COMMUNICATION SYSTEM 有权
标题翻译：半导体集成电路设备和通信系统
公开(公告)号：US20110221532A1
公开(公告)日：2011-09-15
申请号：US12886700
申请日：2010-09-21
申请人： Junji Wadatsumi
发明人： Junji Wadatsumi
IPC分类号： H03F3/04 , H03F1/22
CPC分类号： H03F1/223 , H03F3/195 , H03F3/45179 , H03F3/45183 , H03F2200/294 , H03F2200/451 , H03F2200/541 , H03F2203/45638 , H03F2203/45702
摘要： According to an embodiment, a semiconductor integrated circuit device includes an amplifier and a feedback circuit. The amplifier includes an input terminal receiving an input signal and an output terminal outputting an output signal. The feedback circuit includes a first transistor generating a bias current. The feedback circuit is configured to operate based on the bias current. The feedback circuit is configured to receive the output signal to supply a feedback signal to the input terminal. A signal having a reverse phase to the output signal is input to a gate of the first transistor.
摘要翻译：根据实施例，半导体集成电路器件包括放大器和反馈电路。放大器包括接收输入信号的输入端和输出输出信号的输出端。反馈电路包括产生偏置电流的第一晶体管。反馈电路被配置为基于偏置电流进行操作。反馈电路被配置为接收输出信号以向输入端提供反馈信号。具有与输出信号相反的相位的信号被输入到第一晶体管的栅极。

4. 发明授权

US07705663B2 Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US07705663B2
公开(公告)日：2010-04-27
申请号：US12051026
申请日：2008-03-19
申请人： Junji Wadatsumi , Shouhei Kousai
发明人： Junji Wadatsumi , Shouhei Kousai
IPC分类号： G05F1/10
CPC分类号： G05F3/262 , H03F1/223 , H03F1/301 , H03F3/347 , H03F2200/294 , H03F2200/447 , H03F2200/453 , H03F2200/492 , H03F2200/78
摘要： A semiconductor integrated circuit, has a current source having one end connected to a power supply and outputting a reference current; a first MOS transistor having one end connected to an other end of the current source and being diode-connected; a second MOS transistor having a gate connected to a gate of the first MOS transistor and passing an output current obtained by current-mirroring the reference current; a first variable resistor connected between an other end of the first MOS transistor and a ground; a resistive component connected between an other end of the second MOS transistor and the ground; and a first operational amplifier fed with a first potential of the other end of the first MOS transistor and a second potential of the other end of the second MOS transistor and outputting a signal for controlling a resistance value of the first variable resistor to equalize the first potential and the second potential, wherein the resistance value of the first variable resistor is controlled based on the output signal of the first operational amplifier.
摘要翻译：一种半导体集成电路，具有一端与电源连接并输出参考电流的电流源; 第一MOS晶体管，其一端连接到电流源的另一端并被二极管连接; 第二MOS晶体管，其栅极连接到第一MOS晶体管的栅极，并且通过电流镜像参考电流而获得的输出电流; 连接在第一MOS晶体管的另一端和地之间的第一可变电阻器; 连接在第二MOS晶体管的另一端和地之间的电阻元件; 以及第一运算放大器，其馈送第一MOS晶体管的另一端的第一电位和第二MOS晶体管的另一端的第二电位，并输出用于控制第一可变电阻的电阻值的信号，以使第一MOS晶体管的第一电位和第二电位，其中基于第一运算放大器的输出信号来控制第一可变电阻器的电阻值。

5. 发明申请

US20130256660A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130256660A1
公开(公告)日：2013-10-03
申请号：US13685859
申请日：2012-11-27
申请人： Kazuhide ABE , Atsuko IIDA , Kazuhiko ITAYA , Junji WADATSUMI , Shouhei KOUSAI
发明人： Kazuhide ABE , Atsuko IIDA , Kazuhiko ITAYA , Junji WADATSUMI , Shouhei KOUSAI
IPC分类号： H01L29/84
CPC分类号： H01L29/84 , H01L2924/1461 , H03H9/2405 , H03H2009/02314
摘要： A semiconductor device according to an embodiment has: a semiconductor substrate; an acoustic resonator formed on the semiconductor substrate, having a semiconductor layer including impurity electrically isolated from the substrate by depletion layer and configured to resonate at a predetermined resonance frequency based on acoustic standing wave excited in the semiconductor layer; a temperature detector formed on the semiconductor substrate and configured to detect temperature of the semiconductor substrate; a calculating unit formed on the semiconductor substrate and configured to perform calculation of temperature compensation based on the temperature detected by the temperature detector, kind of the impurity and concentration of the impurity; and a controller formed on the semiconductor substrate and configured to control the resonance frequency based on a result of the calculation by the calculating unit.
摘要翻译：根据实施例的半导体器件具有：半导体衬底; 形成在所述半导体衬底上的声谐振器，具有包括通过耗尽层与所述衬底电绝缘的杂质的半导体层，并且被配置为基于在所述半导体层中激发的声驻波以预定的谐振频率谐振; 温度检测器，形成在所述半导体衬底上，并被配置为检测所述半导体衬底的温度; 计算单元，其形成在所述半导体基板上，并且被配置为基于由所述温度检测器检测到的温度进行温度补偿的计算，所述杂质的种类和所述杂质的浓度; 以及控制器，其形成在所述半导体基板上，并且被配置为基于所述计算单元的计算结果来控制所述共振频率。

6. 发明授权

US08310311B2 Semiconductor integrated circuit device and communication system 有权
标题翻译：半导体集成电路器件和通信系统
公开(公告)号：US08310311B2
公开(公告)日：2012-11-13
申请号：US12886700
申请日：2010-09-21
申请人： Junji Wadatsumi
发明人： Junji Wadatsumi
IPC分类号： H03F1/38
CPC分类号： H03F1/223 , H03F3/195 , H03F3/45179 , H03F3/45183 , H03F2200/294 , H03F2200/451 , H03F2200/541 , H03F2203/45638 , H03F2203/45702
摘要： According to an embodiment, a semiconductor integrated circuit device includes an amplifier and a feedback circuit. The amplifier includes an input terminal receiving an input signal and an output terminal outputting an output signal. The feedback circuit includes a first transistor generating a bias current. The feedback circuit is configured to operate based on the bias current. The feedback circuit is configured to receive the output signal to supply a feedback signal to the input terminal. A signal having a reverse phase to the output signal is input to a gate of the first transistor.
摘要翻译：根据实施例，半导体集成电路器件包括放大器和反馈电路。放大器包括接收输入信号的输入端和输出输出信号的输出端。反馈电路包括产生偏置电流的第一晶体管。反馈电路被配置为基于偏置电流进行操作。反馈电路被配置为接收输出信号以向输入端提供反馈信号。具有与输出信号相反的相位的信号被输入到第一晶体管的栅极。

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