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    • 8. 发明授权
    • Three-dimensional nanodevices including nanostructures
    • 包括纳米结构在内的三维纳米器件
    • US08263964B2
    • 2012-09-11
    • US12672995
    • 2008-05-19
    • Han Young YuByung Hoon KimAn Soon KimIn Bok BaekChil Seong AhJong Heon YangChan Woo ParkChang Geun Ahn
    • Han Young YuByung Hoon KimAn Soon KimIn Bok BaekChil Seong AhJong Heon YangChan Woo ParkChang Geun Ahn
    • H01L29/06
    • H01J49/4205B81B7/0025B81B2201/0214B81B2201/0271B82Y10/00B82Y40/00G01N2291/0257H01J49/0018H01L29/0673H01L29/7613H01L29/775H03H2009/02314
    • Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused. In particular, since 3D nanostructures have mechanical and electrical characteristics, 3D nanodevices including new 3D nanostructures can be provided using nano-electro-mechanical systems (NEMS). Also, a single electron device, a spin device, or a single electron transistor (SET)-field effect transistor (FET) hybrid device can be formed using a simple process unlike in planar devices.
    • 提供了三维(3D)纳米器件,包括3D纳米结构。 3D纳米装置包括至少一个纳米结构,每个纳米结构包括漂浮在基板上的振荡部分和支撑部分,用于支撑振荡部分的两个纵向端部,支撑件设置在基板上以支撑每个纳米结构的支撑部分, 设置在基板的上部,基板的下部或基板的上部和下部的至少一个控制器,以控制每个纳米结构;以及感测单元,设置在每个振荡部分上以感测 外部供应的吸附材料。 因此,与典型的平面器件不同,可以减少纳米器件与衬底之间的杂质的产生,并且可能引起机械振动。 特别地,由于3D纳米结构具有机械和电学特性,可以使用纳米机电系统(NEMS)提供包括新的3D纳米结构的3D纳米器件。 此外,可以使用与平面器件不同的简单工艺来形成单电子器件,自旋器件或单电子晶体管(SET)场效应晶体管(FET)混合器件。
    • 9. 发明申请
    • THREE-DIMENSIONAL NANODEVICES INCLUDING NANOSTRUCTURES
    • 包括纳米结构的三维纳米器件
    • US20110193052A1
    • 2011-08-11
    • US12672995
    • 2008-05-19
    • Han Young YuByung Hoon KimAn Soon KimIn Bok BaekChil Seong AhJong Heon YangChan Woo ParkChang Geun Ahn
    • Han Young YuByung Hoon KimAn Soon KimIn Bok BaekChil Seong AhJong Heon YangChan Woo ParkChang Geun Ahn
    • H01L29/06B82Y99/00
    • H01J49/4205B81B7/0025B81B2201/0214B81B2201/0271B82Y10/00B82Y40/00G01N2291/0257H01J49/0018H01L29/0673H01L29/7613H01L29/775H03H2009/02314
    • Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused. In particular, since 3D nanostructures have mechanical and electrical characteristics, 3D nanodevices including new 3D nanostructures can be provided using nano-electro-mechanical systems (NEMS). Also, a single electron device, a spin device, or a single electron transistor (SET)-field effect transistor (FET) hybrid device can be formed using a simple process unlike in planar devices.
    • 提供了三维(3D)纳米器件,包括3D纳米结构。 3D纳米装置包括至少一个纳米结构,每个纳米结构包括漂浮在基板上的振荡部分和支撑部分,用于支撑振荡部分的两个纵向端部,支撑件设置在基板上以支撑每个纳米结构的支撑部分, 设置在基板的上部,基板的下部或基板的上部和下部的至少一个控制器,以控制每个纳米结构;以及感测单元,设置在每个振荡部分上以感测 外部供应的吸附材料。 因此,与典型的平面器件不同,可以减少纳米器件与衬底之间的杂质的产生,并且可能引起机械振动。 特别地,由于3D纳米结构具有机械和电学特性,可以使用纳米机电系统(NEMS)提供包括新的3D纳米结构的3D纳米器件。 此外,可以使用与平面器件不同的简单工艺来形成单电子器件,自旋器件或单电子晶体管(SET)场效应晶体管(FET)混合器件。