专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008278731A Overdubbing 审中-公开
标题翻译：配音
公开(公告)号：JP2008278731A
公开(公告)日：2008-11-13
申请号：JP2007156878
申请日：2007-05-07
申请人： Hiroshi Toyoda , 博豊田
发明人： TOYODA HIROSHI
摘要： PROBLEM TO BE SOLVED: To achieve instantaneous overdubbing when making CDs or the like.
SOLUTION: An electric manufacturer makes a machine that allows a CD to be instantaneously overdubbed a thousand times or two thousand times in a studio.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：在制作CD等时实现瞬时叠加。解决方案：电气制造商制造一台允许CD在工作室中瞬间超过千次或两千次的机器。版权所有（C）2009，JPO＆INPIT

2. 发明申请

US20130093090A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造半导体器件和半导体器件的方法
公开(公告)号：US20130093090A1
公开(公告)日：2013-04-18
申请号：US13707359
申请日：2012-12-06
申请人： Yumi HAYASHI , Atsuko Sakata , Kei Watanabe , Noriaki Matsunaga , Shinichi Nakao , Makoto Wada , Hiroshi Toyoda
发明人： Yumi HAYASHI , Atsuko Sakata , Kei Watanabe , Noriaki Matsunaga , Shinichi Nakao , Makoto Wada , Hiroshi Toyoda
IPC分类号： H01L23/485
CPC分类号： H01L23/485 , H01L21/76814 , H01L21/76843 , H01L21/76849 , H01L21/76856 , H01L21/76867 , H01L21/76877 , H01L21/76883 , H01L21/76886 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C.
摘要翻译：一种制造半导体器件的方法，包括在衬底上形成电介质膜; 在电介质膜中形成开口; 形成含有其形成硅化物的能量低于开口内的硅化铜的能量的金属的第一膜; 在形成有含有金属的第一膜的开口中形成导电性并且含有铜（Cu）的第二膜; 以及在所述基板的温度低于300℃的气氛中，在所述第二膜上选择性地形成含有Cu和硅（Si）的复合膜。

3. 发明申请

US20120090417A1 POWER TRANSMISSION CONTROL APPARATUS FOR VEHICLE 有权
标题翻译：车辆动力传动控制装置
公开(公告)号：US20120090417A1
公开(公告)日：2012-04-19
申请号：US13378164
申请日：2011-03-02
申请人： Hiroshi Toyoda , Takeshige Miyazaki
发明人： Hiroshi Toyoda , Takeshige Miyazaki
IPC分类号： F16H61/68
CPC分类号： F16D48/06 , B60Y2300/427 , F16D2500/10412 , F16D2500/108 , F16D2500/3026 , F16D2500/30401 , F16D2500/30816 , F16D2500/30818 , F16D2500/3108 , F16D2500/3111 , F16D2500/50245 , F16D2500/7041 , F16H2342/042
摘要： A sleeve stroke SSt of a specific sleeve is gradually increased from “0” (after t1) in a state in which a vehicle is stopped, a transmission is in a neutral state (all sleeve strokes SSt=0 (original position)), a clutch is in a disengaged state (clutch stroke CSt=0 (original position)), and an engine is operating (engine rotational speed NE>0). Upon determination that the sleeve stroke SSt has reached a predetermined value A, at which synchronization operation of a corresponding synchronization mechanism is performed, the sleeve stroke SSt is fixed to the predetermined value A, and an operation of increasing the clutch stroke CSt from “0” in a press engagement direction is started (time t2). An engagement start point CStlearn of the clutch is obtained based on a change in the rotational speed Ni of an input shaft Ai of the transmission after that (time t3).
摘要翻译：特定套筒的套筒冲程SSt在车辆停止的状态下从“0”（t1之后）逐渐增加，变速器处于中立状态（所有套筒冲程SSt = 0（原始位置）），a 离合器处于脱离状态（离合器行程CSt = 0（原始位置）），发动机正在运转（发动机转速NE> 0）。当确定套筒行程SSt已经达到预定值A时，执行相应的同步机构的同步操作，套筒行程SSt被固定到预定值A，并且将离合器行程CSt从“0”增加的操作 “按压接合方向”（时间t2）。基于变速器的输入轴Ai的转速Ni的变化（时间t3）之后，获得离合器的接合开始点CStharn。

4. 发明申请

US20100250080A1 CONTROL APPARATUS FOR AUTOMATED MANUAL TRANSMISSION 审中-公开
标题翻译：自动手册变速器控制装置
公开(公告)号：US20100250080A1
公开(公告)日：2010-09-30
申请号：US12750028
申请日：2010-03-30
申请人： Shuichi DOMAE , Atsushi Takeuchi , Kiyoshi Nagami , Takeshige Miyazaki , Yoshiki Ito , Hiroki Hatori , Hiroshi Toyoda
发明人： Shuichi DOMAE , Atsushi Takeuchi , Kiyoshi Nagami , Takeshige Miyazaki , Yoshiki Ito , Hiroki Hatori , Hiroshi Toyoda
IPC分类号： G06F19/00
CPC分类号： F16H61/688 , F16D48/06 , F16D2500/1086 , F16D2500/30405 , F16D2500/305 , F16D2500/5102 , F16D2500/5106 , F16H59/72 , F16H2059/725
摘要： A control apparatus for an automated manual transmission having a plurality of power transmitting units respectively including clutches for connecting and disconnecting a power transmission path between a power source and the automated manual transmission and transmission mechanisms connected to the corresponding clutches so as to transmit a power of the power source, includes a clutch temperature calculating means for calculating a temperature of each of the clutches, and a vehicle moving start controlling means for controlling a moving start of the vehicle so that when the temperature of one of the clutches, calculated by means of the clutch temperature calculating means, is equal to or higher than a predetermined usage restriction threshold value, the other one of the clutches is used so as to transmit the power of the power source to the other one of the power transmission units, having the other one of the clutches.
摘要翻译：一种用于自动手动变速器的控制装置，其具有多个动力传递单元，分别包括离合器，用于连接和断开电源与连接到相应离合器的自动手动变速器和变速机构之间的动力传递路径，以便传递电源包括用于计算每个离合器的温度的离合器温度计算装置，以及用于控制车辆的移动开始的车辆移动开始控制装置，使得当通过以下方式计算的离合器之一的温度离合器温度计算装置等于或高于预定的使用限制阈值，则使用另一个离合器将电源的功率发送到具有另一个的另一个功率传输单元一个离合器。

5. 发明申请

US20090135706A1 Optical recording medium, and optical recording method and optical recording apparatus thereof 审中-公开
标题翻译：光记录介质及其光记录方法及其光记录装置
公开(公告)号：US20090135706A1
公开(公告)日：2009-05-28
申请号：US11886972
申请日：2006-03-17
申请人： Soh Noguchi , Tsutomu Sato , Tatsuya Tomura , Yasunobu Ueno , Ikuo Shimizu , Motoharu Kinugasa , Hiroshi Toyoda
发明人： Soh Noguchi , Tsutomu Sato , Tatsuya Tomura , Yasunobu Ueno , Ikuo Shimizu , Motoharu Kinugasa , Hiroshi Toyoda
IPC分类号： G11B7/00 , G11B7/24 , G11B7/246
CPC分类号： G11B7/246 , G11B7/2463 , G11B7/2467 , G11B7/247 , G11B7/248 , G11B7/2492 , G11B7/251 , G11B7/2531 , G11B7/2532 , G11B7/2533 , G11B7/2534 , G11B7/2535 , G11B7/2542 , G11B7/2548 , G11B7/256 , G11B7/2575 , G11B7/2578 , G11B7/2585 , G11B7/259 , G11B7/2595 , G11B2007/24612 , G11B2007/25417 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25713 , G11B2007/25715 , G11B2007/25718
摘要： The present invention provides an optical recording medium including a substrate and a recording layer on the substrate having a squarylium metal chelate compound with a central metal. The recording layer includes a mixture of squarylium metal chelate compounds having ligands of the same type as well as metals of two or more types as the central metal. It is preferable that the recording layer includes a squarylium metal chelate compound having a bivalent metal as its central metal and a squarylium metal chelate compound having a metal other than a bivalent metal as its central metal.
摘要翻译：本发明提供了一种光学记录介质，其包括基材和记录层，该基材具有中心金属的方酸金属螯合物。记录层包括具有相同类型的配体的方酸金属螯合化合物以及两种或多种类型的金属作为中心金属的混合物。优选的是，记录层包括具有二价金属作为其中心金属的方晶金属螯合化合物和具有不同于二价金属的金属作为其中心金属的方酸金属螯合化合物。

6. 发明申请

US20080284542A1 FILM BULK ACOUSTIC RESONATOR 审中-公开
标题翻译：电影大音量谐振器
公开(公告)号：US20080284542A1
公开(公告)日：2008-11-20
申请号：US11923117
申请日：2007-10-24
申请人： Kenya Sano , Masahiko Hasunuma , Hiroshi Toyoda
发明人： Kenya Sano , Masahiko Hasunuma , Hiroshi Toyoda
IPC分类号： H03H9/15
CPC分类号： H03H9/174 , H03H3/04 , H03H9/02149 , H03H9/13 , H03H9/173 , H03H2003/023
摘要： A film bulk acoustic resonator includes: a substrate; a lower electrode held on the substrate with at least a portion thereof being in a hollow state; a piezoelectric film provided on the lower electrode; and an upper electrode provided on the piezoelectric film. At least one of the lower electrode and the upper electrode is primarily composed of copper (Cu) and further contains a first element having a negatively larger free energy of oxide formation (ΔG) than copper. At least one of the lower electrode and the upper electrode is primarily composed of copper (Cu) and further contains a second element having smaller surface energy than copper.
摘要翻译：膜体声波谐振器包括：基板; 保持在所述基板上的下电极，其至少一部分处于中空状态; 设置在下电极上的压电膜; 以及设置在压电膜上的上电极。下电极和上电极中的至少一个主要由铜（Cu）组成，并且还包含具有比铜更大的氧化物形成自由能（ΔG）的较大的第一元素。下电极和上电极中的至少一个主要由铜（Cu）组成，并且还包含比铜更小的表面能的第二元件。

7. 发明申请

US20080102628A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080102628A1
公开(公告)日：2008-05-01
申请号：US11926614
申请日：2007-10-29
申请人： Masahiko Hasunuma , Hisashi Kaneko , Hiroshi Toyoda
发明人： Masahiko Hasunuma , Hisashi Kaneko , Hiroshi Toyoda
IPC分类号： H01L21/4763
CPC分类号： H01L21/76877 , C23C26/00 , C25D5/02 , C25D5/18 , C25D5/50 , C25D7/123 , H01L21/2885
摘要： A method for manufacturing a semiconductor device includes forming, on a substrate having a recessed portion on a surface, a plating film which is at least buried in the recessed portion and has a higher impurity concentration in an upper portion than in a lower portion, thermally treating the plating film, and removing the thermally treated plating film except for a portion buried in the recessed portion.
摘要翻译：一种半导体器件的制造方法，其特征在于，在具有表面的凹部的基板上形成至少埋设在所述凹部内并且在上部比在下部具有较高的杂质浓度的镀膜处理镀膜，除去除了凹部中的部分以外的热处理电镀膜。

8. 发明授权

US07323805B2 Piezoelectric thin film device and method for manufacturing the same 失效
公开(公告)号：US07323805B2
公开(公告)日：2008-01-29
申请号：US11043257
申请日：2005-01-27
申请人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H01L41/047
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

9. 发明申请

US20080010018A1 Parking support device 失效
标题翻译：停车支援装置
公开(公告)号：US20080010018A1
公开(公告)日：2008-01-10
申请号：US11324583
申请日：2006-01-04
申请人： Hisashi Satonaka , Masato Okuda , Hiroshi Toyoda
发明人： Hisashi Satonaka , Masato Okuda , Hiroshi Toyoda
IPC分类号： G05D1/02
CPC分类号： B62D15/0285 , G01S2013/9314 , G01S2015/935 , G01S2015/936
摘要： In a parking support device, a distance measuring unit measures a quantity equivalent to a distance from an automotive vehicle to an object existing in a predetermined direction. A storage unit stores a sequence of points indicating results of the measurement performed multiple times. A first object specifying unit generates first object information based on the sequence of points when a length of the sequence of points has exceeded a first reference length. A second object specifying unit generates second object information based on the sequence of points when a length of the sequence of points has exceeded a second, larger reference length. A target parking position is determined based on the first object information in a stage where the first object information is generated.
摘要翻译：在停车辅助装置中，距离测量单元测量相当于从机动车辆到存在于预定方向的物体的距离的量。存储单元存储指示多次执行测量结果的点的顺序。第一对象指定单元，当点序列的长度超过第一参考长度时，基于点的序列生成第一对象信息。第二对象指定单元，当点序列的长度超过第二较大参考长度时，基于点序列生成第二对象信息。基于在生成第一对象信息的阶段中的第一对象信息来确定目标停车位置。

10. 发明授权

US07314827B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07314827B2
公开(公告)日：2008-01-01
申请号：US11181908
申请日：2005-07-15
申请人： Hiroshi Toyoda , Sachiyo Ito , Masahiko Hasunuma , Hisashi Kaneko
发明人： Hiroshi Toyoda , Sachiyo Ito , Masahiko Hasunuma , Hisashi Kaneko
IPC分类号： H01L21/4763
CPC分类号： H01L21/76838 , C23C14/0635 , C23C14/165
摘要： A method of manufacturing a semiconductor device according to an aspect of the present invention comprises forming a plated film on a substrate which has a recessed portion on its surface so as to bury in the recessed portion by a plating method; forming over the plated film a compressive stress-applying film which is composed of a material having a thermal expansion coefficient of 60% or less compared with a thermal expansion coefficient of a metal composing the plated film; heat-treating while applying a compressive stress to the plated film by the compressive stress-applying film; and removing the compressive stress-applying film and the plated film which is not buried in the recessed portion.
摘要翻译：根据本发明的一个方面的制造半导体器件的方法包括在其表面上具有凹陷部分的基板上形成镀膜，以便通过电镀方式将凹陷部分埋入其中; 在电镀膜上形成压缩应力施加膜，该压应力膜由与构成镀膜的金属的热膨胀系数相比具有60％以下的热膨胀系数的材料构成; 通过压应力施加膜向镀膜施加压应力时的热处理; 并且除去未埋设在凹部中的压应力施加膜和镀膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式