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1. 发明申请

US20120241877A1 ACOUSTIC SEMICONDUCTOR DEVICE 失效
标题翻译：声学半导体器件
公开(公告)号：US20120241877A1
公开(公告)日：2012-09-27
申请号：US13220116
申请日：2011-08-29
申请人： Kazuhide ABE , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
发明人： Kazuhide ABE , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
IPC分类号： H01L29/84
CPC分类号： H03J3/20 , H03B5/326 , H03H9/02566
摘要： According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.
摘要翻译：根据一个实施例，声学半导体器件包括元件单元和第一端子。元件单元包括声共振单元。声共振单元包括半导体晶体。声驻波在声共振单元中是可兴奋的，并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。第一端子电连接到元件单元。从输出和输入电信号中选出的至少一个可经由第一终端实现。电信号与电荷密度耦合。输出电信号来自声共振单元，并且输入电信号进入声共振单元。

2. 发明授权

US06973280B2 Image forming apparatus and liquid developer drying device 失效
标题翻译：图像形成装置和液体显影剂干燥装置
公开(公告)号：US06973280B2
公开(公告)日：2005-12-06
申请号：US10792835
申请日：2004-03-05
申请人： Hideki Nukada , Atsuko Iida , Noriko Yamamoto
发明人： Hideki Nukada , Atsuko Iida , Noriko Yamamoto
IPC分类号： G03G15/11 , G03G15/10
CPC分类号： G03G15/11
摘要： A liquid-developer drying device includes a covering wall which has a facing surface covering and facing to part of an image-carrying body with a drying air passage between them. The image-carrying body carries developed image in a first direction along the drying air passage. The developed image includes liquid developer having toner particles and carrier liquid. The covering wall has a plurality of slits formed therein. The slits are distributed in a region with substantially less than half length along the facing surface covering the image-carrying body so as to blow dry air to the drying air passage in a second direction parallel to the first direction. Each of the slits extends across the drying air passage. The liquid-developer drying device also includes an air source supplying drying air to the slits.
摘要翻译：液体显影剂干燥装置包括：覆盖壁，其具有覆盖并面向图像载体的一部分的面对表面，并且在其间具有干燥空气通道。图像承载体沿着干燥空气通道沿第一方向携带显影图像。显影图像包括具有调色剂颗粒和载体液体的液体显影剂。覆盖壁上形成有多个狭缝。狭缝沿着覆盖图像载体的相对表面大致小于半长的区域分布，以便在与第一方向平行的第二方向上将干燥空气吹送到干燥空气通道。每个狭缝都延伸穿过干燥空气通道。液体显影干燥装置还包括向狭缝供应干燥空气的空气源。

3. 发明授权

US06833229B2 Liquid developer, method of manufacturing the liquid developer, and image forming method and apparatus 失效
公开(公告)号：US06833229B2
公开(公告)日：2004-12-21
申请号：US10722488
申请日：2003-11-28
申请人： Yasushi Shinjo , Atsuko Iida , Haruhi Oh-Oka
发明人： Yasushi Shinjo , Atsuko Iida , Haruhi Oh-Oka
IPC分类号： G03G1510
CPC分类号： G03G9/13 , G03G9/12 , G03G9/122
摘要： A liquid developer, a method of manufacturing the same and a method and apparatus for forming an image, which can attain high transfer efficiency and appropriate tolerance to repetitive image formation. The liquid developer includes toner particles dispersed in an electrically non-conductive liquid solvent. Each toner particle has a resin particle, which is non-soluble in the liquid developer, and pigment particles formed on the surface of the resin particle, whereby the pigment particles suppress contact between the resin particles. Preferably the resin particles have a glass transition temperature of not less than room temperature. One example of manufacturing the liquid developer includes a step of milling pigment particles in a resin particles dispersion liquid at a process temperature higher than the glass transition temperature of the resin particles, whereby the pigments are formed on the surface of the resin particles.

4. 发明授权

US06522853B2 Image printing method and image printing apparatus 有权
标题翻译：图像打印方法和图像打印装置
公开(公告)号：US06522853B2
公开(公告)日：2003-02-18
申请号：US09950626
申请日：2001-09-13
申请人： Atsuko Iida , Norio Yoshikawa
发明人： Atsuko Iida , Norio Yoshikawa
IPC分类号： G03G1510
CPC分类号： G03G15/11 , G03G2215/017 , G03G2215/0658
摘要： Disclosed is a method and apparatus for printing an image on a print medium with a liquid developer which comprises a liquid carrier and a toner dispersed in the liquid carrier. The printing method has: forming a toner image probably containing the liquid carrier, from the liquid developer; removing the liquid carrier from the toner image; transferring the toner image to the print medium; projecting light radiation on the toner image to be transferred, to measure the optical reflection from the toner image to be transferred; and estimating transfer suitability of the toner image to be transferred, by means of the measured optical reflection from the toner image to be transferred, for appropriately controlling the extent of the removing of the liquid carrier. The printing apparatus has an optical instrument which projects light radiation on the toner image to be transferred and measures the optical reflection from the toner image to be transferred, in order to appropriately control the carrier remover.
摘要翻译：公开了一种用包含液体载体和分散在液体载体中的调色剂的液体显影剂在打印介质上打印图像的方法和装置。印刷方法有：从液体显影剂形成可能含有液体载体的调色剂图像; 从调色剂图像中去除液体载体; 将调色剂图像转印到打印介质上; 将光辐射投影在要转印的调色剂图像上，以测量待转印的调色剂图像的光学反射; 并且通过所测量的要转印的调色剂图像的光学反射来估计要转印的调色剂图像的转印适合性，以适当地控制液体载体的去除程度。打印设备具有光学仪器，其将光辐射投射在要转印的调色剂图像上，并测量要转印的调色剂图像的光学反射，以便适当地控制载体移除器。

5. 发明授权

US5530467A Sputtering target, film resistor and thermal printer head 失效
标题翻译：溅射靶，薄膜电阻和热敏打印头
公开(公告)号：US5530467A
公开(公告)日：1996-06-25
申请号：US689285
申请日：1991-06-19
申请人： Takashi Ishigami , Mituo Kawai , Atsuko Iida
发明人： Takashi Ishigami , Mituo Kawai , Atsuko Iida
IPC分类号： C23C14/34 , H01C17/12 , B41J2/335
CPC分类号： C23C14/3414 , H01C17/12
摘要： A sputtering target comprises an oxide containing niobium, a silicide containing niobium and silicon oxide substantially for the rest. The sputtering target is formed e.g. by reactive sintering a powdery niobium or a powdery niobium alloy containing silicon oxide in the range of 15 to 70 mol % by mole ratio. A film resistor formed by using the sputtering target exhibits high specific resistance, good stabilities of resistance and a film composition and excellent reproducibility and is used as a heat generating resistor in e.g. a thermal printer head.
摘要翻译： PCT No.PCT / JP91 / 00119 Sec。 371日期1991年6月19日 102（e）1991年6月19日PCT 1991年1月31日PCT PCT。公开号WO91 / 11328 日期为1991年8月8日。溅射靶包括含有铌的氧化物，含有铌的硅化物和基本上为其余的氧化硅。溅射靶例如形成。通过反应性烧结含有氧化硅的粉末状铌或含有氧化硅的粉末状铌合金的比例为15〜70摩尔％。通过使用溅射靶形成的薄膜电阻器具有高电阻率，良好的电阻稳定性和薄膜组成以及优异的再现性，并且用作例如发热电阻器。热敏打印头。

6. 发明授权

US08648431B2 Acoustic semiconductor device 失效
标题翻译：声学半导体器件
公开(公告)号：US08648431B2
公开(公告)日：2014-02-11
申请号：US13220116
申请日：2011-08-29
申请人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
发明人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
IPC分类号： H01L29/84
CPC分类号： H03J3/20 , H03B5/326 , H03H9/02566
摘要： According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.
摘要翻译：根据一个实施例，声学半导体器件包括元件单元和第一端子。元件单元包括声共振单元。声共振单元包括半导体晶体。声驻波在声共振单元中是可兴奋的，并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。第一端子电连接到元件单元。从输出和输入电信号中选出的至少一个可经由第一终端实现。电信号与电荷密度耦合。输出电信号来自声共振单元，并且输入电信号进入声共振单元。

7. 发明授权

US08324707B2 Power amplifier 失效
标题翻译：功率放大器
公开(公告)号：US08324707B2
公开(公告)日：2012-12-04
申请号：US13050545
申请日：2011-03-17
申请人： Tadahiro Sasaki , Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya
发明人： Tadahiro Sasaki , Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya
IPC分类号： H01L27/105
CPC分类号： H01L27/088 , H01L21/823493 , H01L27/0207 , H01L27/0922 , H01L29/41758 , H01L29/4238 , H01L29/78
摘要： According to an embodiment, a power amplifier is provided with at least one first growth ring gate structure and multiple second growth ring gate structures. The first growth ring gate structure is bounded by a semiconductor layer and performs a power amplification operation. The multiple second growth ring gate structures are bounded by the semiconductor layer and are arranged adjacently around the first growth ring gate structure in a surrounding manner. When the first growth ring gate structure performs a power amplification operation, the multiple second growth ring gate structures are depleted by applying a reverse bias to the multiple second growth ring gate structures whereby the depleted multiple second growth ring gate structures isolate the first growth ring gate structure from a surrounding portion.
摘要翻译：根据实施例，功率放大器设置有至少一个第一增长环栅极结构和多个第二增长环栅极结构。第一生长环栅极结构由半导体层限制并进行功率放大操作。多个第二生长环形栅极结构由半导体层限制，并且以周围的方式围绕第一生长环栅极结构相邻布置。当第一生长环栅极结构执行功率放大操作时，通过向多个第二生长环栅极结构施加反向偏压来耗尽多个第二生长环栅结构，由此耗尽的多个第二生长环栅极结构将第一生长环栅极隔离结构从周围部分。

8. 发明授权

US07893525B2 Semiconductor device having an adhesive portion with a stacked structure and method for manufacturing the same 有权
标题翻译：具有层叠结构的粘合部的半导体装置及其制造方法
公开(公告)号：US07893525B2
公开(公告)日：2011-02-22
申请号：US12350727
申请日：2009-01-08
申请人： Atsuko Iida , Yutaka Onozuka , Kazuhiko Itaya
发明人： Atsuko Iida , Yutaka Onozuka , Kazuhiko Itaya
IPC分类号： H01L21/98
CPC分类号： B81C1/00253 , B81C1/00238 , H01L21/568 , H01L23/295 , H01L23/3135 , H01L24/19 , H01L24/96 , H01L2224/04105 , H01L2224/24137 , H01L2224/24195 , H01L2924/10253 , H01L2924/1461 , H01L2924/15788 , H01L2924/18162 , H01L2924/19105 , H01L2924/3511 , H01L2924/00
摘要： It is made possible to restrict warpage at the time of resin cure and achieve a smaller thickness. A semiconductor device includes: a first chip including a MEMS device and a first pad formed on an upper face of the MEMS device, the first pad being electrically connected to the MEMS device; a second chip including a semiconductor device and a second pad formed on an upper face of the semiconductor device, the second pad being electrically connected to the semiconductor device; and an adhesive portion having a stacked structure, and bonding a side face of the first chip and a side face of the second chip, the stacked structure including a first adhesive film formed by adding a first material constant modifier to a first resin, and a second adhesive film formed by adding a second material constant modifier to a second resin.
摘要翻译：可以在树脂固化时限制翘曲并实现更小的厚度。半导体器件包括：第一芯片，其包括MEMS器件和形成在MEMS器件的上表面上的第一焊盘，第一焊盘电连接到MEMS器件; 包括半导体器件的第二芯片和形成在所述半导体器件的上表面上的第二焊盘，所述第二焊盘电连接到所述半导体器件; 以及具有堆叠结构的粘合部分，并且将第一芯片的侧面和第二芯片的侧面接合，所述堆叠结构包括通过将第一材料常数改性剂添加到第一树脂而形成的第一粘合膜，以及通过将第二材料常数改性剂加入到第二树脂中形成的第二粘合剂膜。

9. 发明申请

US20100244059A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100244059A1
公开(公告)日：2010-09-30
申请号：US12722847
申请日：2010-03-12
申请人： Atsuko Iida , Iwao Mitsuishi
发明人： Atsuko Iida , Iwao Mitsuishi
IPC分类号： H01L33/00
CPC分类号： H05K1/181 , H01L21/568 , H01L24/19 , H01L25/167 , H01L2224/04105 , H01L2224/24137 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2924/10253 , H01L2924/12041 , H01L2924/1461 , H01L2924/15787 , H01L2924/15788 , H05K1/0203 , H05K3/284 , H05K2201/09709 , H05K2201/10106 , H05K2201/1031 , H05K2201/10515 , H05K2201/10674 , H05K2201/10893 , H05K2203/1322 , Y02P70/611 , H01L2924/00014 , H01L2924/00
摘要： An aspect of the present invention provides a semiconductor device, in which densely packaging and high performance of optical elements are realized by a simple manufacturing process. The semiconductor device includes: a first chip module, a second chip module and a bonding layer. The first chip module includes a plurality of optical chips that are bonded within a substantially same plane with a first resin layer. The second chip module includes a plurality of control semiconductor chips and a plurality of connecting chips. The connecting chips include conductive materials piercing through the connecting chips. The control semiconductor chips and the connecting chips are bonded within a substantially same plane with a second resin layer. And the optical chips and the control semiconductor chips are electrically connected through the connecting chips.
摘要翻译：本发明的一个方面提供了一种半导体器件，其中通过简单的制造工艺实现了光学元件的密集封装和高性能。半导体器件包括：第一芯片模块，第二芯片模块和结合层。第一芯片模块包括多个光学芯片，其与第一树脂层在大致相同的平面内结合。第二芯片模块包括多个控制半导体芯片和多个连接芯片。连接芯片包括穿过连接芯片的导电材料。控制半导体芯片和连接芯片与第二树脂层在大致相同的平面内结合。并且光学芯片和控制半导体芯片通过连接芯片电连接。

10. 发明申请

US20090179317A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090179317A1
公开(公告)日：2009-07-16
申请号：US12350727
申请日：2009-01-08
申请人： Atsuko Iida , Yutaka Onozuka , Kazuhiko Itaya
发明人： Atsuko Iida , Yutaka Onozuka , Kazuhiko Itaya
IPC分类号： H01L23/00 , H01L21/98
CPC分类号： B81C1/00253 , B81C1/00238 , H01L21/568 , H01L23/295 , H01L23/3135 , H01L24/19 , H01L24/96 , H01L2224/04105 , H01L2224/24137 , H01L2224/24195 , H01L2924/10253 , H01L2924/1461 , H01L2924/15788 , H01L2924/18162 , H01L2924/19105 , H01L2924/3511 , H01L2924/00
摘要： It is made possible to restrict warpage at the time of resin cure and achieve a smaller thickness. A semiconductor device includes: a first chip including a MEMS device and a first pad formed on an upper face of the MEMS device, the first pad being electrically connected to the MEMS device; a second chip including a semiconductor device and a second pad formed on an upper face of the semiconductor device, the second pad being electrically connected to the semiconductor device; and an adhesive portion having a stacked structure, and bonding a side face of the first chip and a side face of the second chip, the stacked structure including a first adhesive film formed by adding a first material constant modifier to a first resin, and a second adhesive film formed by adding a second material constant modifier to a second resin.
摘要翻译：可以在树脂固化时限制翘曲并实现更小的厚度。半导体器件包括：第一芯片，其包括MEMS器件和形成在MEMS器件的上表面上的第一焊盘，第一焊盘电连接到MEMS器件; 包括半导体器件的第二芯片和形成在所述半导体器件的上表面上的第二焊盘，所述第二焊盘电连接到所述半导体器件; 以及具有堆叠结构的粘合部分，并且将第一芯片的侧面和第二芯片的侧面接合，所述堆叠结构包括通过将第一材料常数改性剂添加到第一树脂而形成的第一粘合膜，以及通过将第二材料常数改性剂加入到第二树脂中形成的第二粘合剂膜。

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