专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090008363A1 Plasma processing apparatus and a plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20090008363A1
公开(公告)日：2009-01-08
申请号：US12230565
申请日：2008-09-02
申请人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
发明人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
IPC分类号： C23F1/02
CPC分类号： H01J37/32522 , H01J37/32192 , H01J37/32678 , H01L21/31116
摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall of the etching chamber in a range from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.
摘要翻译：在氧化膜蚀刻工艺中，需要具有CF 3，CF 2，CF和F的合适比例的等离子体，并且存在腐蚀特性根据蚀刻室的温度波动而波动的问题。使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将蚀刻室的侧壁的温度保持在10℃和120℃的范围内，稳定的可以获得蚀刻特性。由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热可以容易地获得耐性性能对策。

2. 发明申请

US20060157449A1 Plasma processing apparatus and a plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20060157449A1
公开(公告)日：2006-07-20
申请号：US11348300
申请日：2006-02-07
申请人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
发明人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01J37/32522 , H01J37/32192 , H01J37/32678 , H01L21/31116
摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall of the etching chamber in a range from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.
摘要翻译：在氧化膜蚀刻工艺中，需要具有CF 3 N，CF 2，CF和F的合适比例的等离子体，并且存在的问题是，特性根据蚀刻室的温度波动而波动。使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将蚀刻室的侧壁的温度保持在10℃和120℃的范围内，稳定的可以获得蚀刻特性。由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热可以容易地获得耐性性能对策。

3. 发明授权

US07048869B2 Plasma processing apparatus and a plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07048869B2
公开(公告)日：2006-05-23
申请号：US09414520
申请日：1999-10-08
申请人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
发明人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H05H1/26
CPC分类号： H01J37/32522 , H01J37/32192 , H01J37/32678 , H01L21/31116
摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.
摘要翻译：在氧化膜蚀刻工艺中，需要具有CF 3，CF 2，CF，F的适当比例的等离子体，并且存在的问题在于，蚀刻特性随着蚀刻室的温度波动而波动。使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将侧壁的温度保持在10℃和120℃，可以获得稳定的蚀刻特性。由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热可以容易地获得耐性性能对策。

4. 发明申请

US20050236109A1 Plasma etching apparatus and plasma etching method 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20050236109A1
公开(公告)日：2005-10-27
申请号：US11156477
申请日：2005-06-21
申请人： Toshio Masuda , Kazue Takahashi , Mitsuru Suehiro , Tetsunori Kaji , Saburo Kanai
发明人： Toshio Masuda , Kazue Takahashi , Mitsuru Suehiro , Tetsunori Kaji , Saburo Kanai
IPC分类号： C23F1/00 , H01J37/32
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022
摘要： A plasma processing apparatus includes a vacuum processing chamber, a plasma generating unit having a first power source, a gas supply unit, a lower electrode having a sample table surface for holding a sample in the vacuum processing chamber, and a vacuum pumping unit. The apparatus further includes a plate disposed at a position opposed to the sample table surface, a disc electricity conductor disposed in contact with the plate, a second power source for applying an RF frequency bias power to the disc electricity conductor, and a unit for controlling a temperature of the plate to a predetermined value. The plate is made of silicon or carbon at high purity, and the disc electricity conductor and the plate have a plurality of holes for introducing processing gas from the gas supply unit into the vacuum processing chamber.
摘要翻译：等离子体处理装置包括真空处理室，具有第一电源的等离子体产生单元，气体供给单元，具有用于将样品保持在真空处理室中的样品台表面的下部电极和真空泵送单元。该设备还包括设置在与样品台表面相对的位置处的板，与板接触设置的盘导电体，用于向盘导电体施加RF频率偏置功率的第二电源，以及用于控制板的温度达到预定值。该板由高纯度的硅或碳制成，盘导电体和板具有多个孔，用于将来自气体供应单元的处理气体引入真空处理室。

5. 发明授权

US06815365B2 Plasma etching apparatus and plasma etching method 失效
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US06815365B2
公开(公告)日：2004-11-09
申请号：US09983946
申请日：2001-10-26
申请人： Toshio Masuda , Kazue Takahashi , Mitsuru Suehiro , Tetsunori Kaji , Saburo Kanai
发明人： Toshio Masuda , Kazue Takahashi , Mitsuru Suehiro , Tetsunori Kaji , Saburo Kanai
IPC分类号： H01L21302
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022 , H01L21/3065 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma etching method for etching a sample within an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall, and a heating mechanism proximate to top end of the exchangeable jacket for generating heat which radiates towards an inside of the etching chamber. The plasma etching method further including a step of evacuating the etching chamber by an evacuation system, a step of supplying an etching gas into the etching chamber, a step of generating a plasma for performing etching of the sample in the etching chamber, and a step of conducting a heating operation by the heating mechanism during an initial stage of the step of generating a plasma.
摘要翻译：一种用于蚀刻在具有侧壁的蚀刻室内的样品的等离子体蚀刻方法，保持在侧壁内侧的可更换夹套，以及靠近可更换护套顶端的加热机构，用于产生朝向蚀刻内部辐射的热量房间。等离子体蚀刻方法还包括通过抽气系统对蚀刻室进行排气的步骤，向蚀刻室供给蚀刻气体的步骤，产生用于在蚀刻室中进行蚀刻的等离子体的工序，以及工序在产生等离子体的步骤的初始阶段期间通过加热机构进行加热操作。

6. 发明授权

US06171438B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US06171438B2
公开(公告)日：2001-01-09
申请号：US09227332
申请日：1999-01-08
申请人： Toshio Masuda , Kazue Takahashi , Mitsuru Suehiro , Tetsunori Kaji , Saburo Kanai
发明人： Toshio Masuda , Kazue Takahashi , Mitsuru Suehiro , Tetsunori Kaji , Saburo Kanai
IPC分类号： C23C1600
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022 , H01L21/3065 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma etching apparatus including a vacuum processing chamber, a plasma generation device, a processing gas supply for supplying processing gas to the processing chamber, an electrode for holding a sample to be processed in the vacuum processing chamber, and an evacuation system for reducing the pressure of the vacuum processing chamber. The processing gas includes at least one kind of gas having a composition for forming a polymerized film by plasma discharge, wherein the processing gas is made plasmatic by plasma discharge in the processing chamber. At least one surface of an inner wall surface of the processing chamber in contact with plasma in the processing chamber and a surface of an internal component part is controlled to a predetermined temperature which is lower than the temperature of the sample to be processed and a strong polymerized film is formed on the inner wall surface of the processing chamber.
摘要翻译：一种等离子体蚀刻装置，包括真空处理室，等离子体产生装置，用于向处理室供应处理气体的处理气体供应源，用于保持真空处理室中待处理样品的电极和用于减少处理气体的排气系统真空处理室的压力。处理气体包括至少一种具有通过等离子体放电形成聚合膜的组成的气体，其中处理气体通过在处理室中的等离子体放电而制成。与处理室中的等离子体接触的处理室的内壁表面的至少一个表面和内部部件的表面被控制到比待处理样品的温度低的预定温度，并且强聚合膜形成在处理室的内壁表面上。

7. 发明授权

US06245190B1 Plasma processing system and plasma processing method 失效
标题翻译：等离子体处理系统和等离子体处理方法
公开(公告)号：US06245190B1
公开(公告)日：2001-06-12
申请号：US09048075
申请日：1998-03-26
申请人： Toshio Masuda , Katsuhiko Mitani , Tetsunori Kaji , Jun'ichi Tanaka , Katsuya Watanabe , Shigeru Shirayone , Toru Otsubo , Ichiro Sasaki , Hideshi Fukumoto , Makoto Koizumi
发明人： Toshio Masuda , Katsuhiko Mitani , Tetsunori Kaji , Jun'ichi Tanaka , Katsuya Watanabe , Shigeru Shirayone , Toru Otsubo , Ichiro Sasaki , Hideshi Fukumoto , Makoto Koizumi
IPC分类号： H05H146
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32165 , H01J37/32623 , H01J37/3266 , H01J37/32678
摘要： A plasma processing apparatus and a method therefor which can achieve a preferred process rate, a fine pattern process capability, a selectivity and uniformity of processing at the same time compatibly for a large size wafer, which effects are achieved by controlling the plasma state and the dissociation state of etching gas through control of the electron resonance through application of a magnetic field thereto. A high frequency power at 20-300 MHz is applied across a pair of electrodes in a vacuum process chamber, and a magnetic field is formed parallel to the plane of the electrodes in the space between the electrodes. By controlling the intensity of the magnetic field in a range of 100 gauss or smaller, formation of electron cyclotron resonance and electron sheath resonance occurring from interaction between the electrical field and the magnetic field in the electrode sheath portion is controlled. Thereby, the plasma state, i.e., the electron density, electron energy distribution and dissociation state of the process gas in the plasma, can be controlled. The magnetic field is generated by a plurality of coils, an outer shield, and pendant yoke to form magnetic field parallel to the plane of the electrodes in the space between the upper and the bottom electrodes.
摘要翻译：一种等离子体处理装置及其方法，其能够通过控制等离子体状态和等离子体状态来实现对于大尺寸晶片同时实现优选的处理速率，精细图案处理能力，同时处理的选择性和均匀性，通过对其施加磁场来控制电子共振来蚀刻气体的解离状态。在真空处理室中的一对电极上施加20-300MHz的高频功率，并且在电极之间的空间中形成平行于电极平面的磁场。通过控制100高斯或更小范围内的磁场的强度，控制由电场鞘部分中的电场和磁场之间的相互作用产生的电子回旋共振和电子鞘共振的形成。由此，可以控制等离子体状态，即等离子体中的处理气体的电子密度，电子能量分布和解离状态。磁场由多个线圈，外屏蔽和悬挂磁轭产生，以在上电极和下电极之间的空间中形成平行于电极平面的磁场。

8. 发明授权

US06422172B1 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US06422172B1
公开(公告)日：2002-07-23
申请号：US09040404
申请日：1998-03-18
申请人： Jyunichi Tanaka , Toru Otsubo , Toshio Masuda , Ichiro Sasaki , Tetsunori Kaji , Katsuya Watanabe
发明人： Jyunichi Tanaka , Toru Otsubo , Toshio Masuda , Ichiro Sasaki , Tetsunori Kaji , Katsuya Watanabe
IPC分类号： C23F102
CPC分类号： H01J37/32082 , C23C16/505 , H01J37/32422
摘要： A plasma processing apparatus has plasma generating means including a means for generating capacitive coupled discharge and a means for radiating electromagnetic waves, so that the energy state of electrons is independently controlled by a combination of a plasma due to capacitive coupled discharge and a plasma due to radiation of electromagnetic waves of a high-frequency, to thereby control the occurrence of radical species, and thereby establishing a compatibility, for example, between high selective etching and high accuracy and high speed in etching or between film quality and film formation rate. Since the density distribution of the plasma can be controlled without any change in hardware configuration by adjusting distributions of the power for capacitive coupled discharge and the power for radiation of electromagnetic waves, the entire surface of a large-sized substrate can be etched at a high accuracy into a fine pattern. The apparatus is also intended to prevent the occurrence of dust caused by plasma processing and changes in characteristics of plasma processing, and hence to enhance productivity of semiconductor devices and/or liquid crystal display elements.
摘要翻译：等离子体处理装置具有等离子体产生装置，其包括用于产生电容耦合放电的装置和用于辐射电磁波的装置，从而由于电容耦合放电引起的等离子体和等离子体的组合独立地控制电子的能量状态，由于辐射高频的电磁波，从而控制自由基物质的发生，从而在高选择性蚀刻和高精度和高速蚀刻或膜质量和成膜速率之间建立兼容性。由于可以通过调节用于电容耦合放电的功率的分布和电磁波的辐射功率来控制等离子体的密度分布而没有硬件配置的任何变化，因此可以将高尺寸基板的整个表面以高精确到精细模式。该装置还旨在防止等离子体处理引起的灰尘的发生和等离子体处理的特性的变化，从而提高半导体器件和/或液晶显示元件的生产率。

9. 发明授权

US06923885B2 Plasma processing system and apparatus and a sample processing method 有权
标题翻译：等离子体处理系统和设备及样品处理方法
公开(公告)号：US06923885B2
公开(公告)日：2005-08-02
申请号：US10732286
申请日：2003-12-11
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.
摘要翻译：一种等离子体处理装置，其具有位于真空室中的样品台，设置在与放置在样品台上的样品相对的位置并且面对在真空室中产生的等离子体的结构，以及设置在该结构中的至少一个通孔气体通过该气体流入真空室。光传输器安装在所述至少一个通孔的背面上，来自所述样品的光通过所述至少一个通孔穿过，所述光通过所述光发射器检测。

10. 发明授权

US07686917B2 Plasma processing system and apparatus and a sample processing method 有权
标题翻译：等离子体处理系统和设备及样品处理方法
公开(公告)号：US07686917B2
公开(公告)日：2010-03-30
申请号：US11780014
申请日：2007-07-19
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.
摘要翻译：等离子体处理装置包括具有设置在处理室中的安装表面的样品台的真空容器，以及构成室的天花板的基本均匀的厚度和电功率的板。该板与样品台相对设置并基本上平行，以覆盖舞台安装表面的整个区域并且在其中具有通孔。直径大于通孔直径的光发射器设置在真空容器的内部，并且具有位于板的后表面上方且间隔很小距离的位置处的端面，以便接收来自腔室的光通过通孔。光发射器相对于板的后表面独立地可拆卸。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式