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1. 发明授权

US08968979B2 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US08968979B2
公开(公告)日：2015-03-03
申请号：US12623155
申请日：2009-11-20
申请人： Katsuya Takemura , Keiichi Masunaga , Daisuke Domon , Masayoshi Sagehashi
发明人： Katsuya Takemura , Keiichi Masunaga , Daisuke Domon , Masayoshi Sagehashi
IPC分类号： G03F7/039 , G03F7/11 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0395 , C08F12/24 , C08F220/30 , C08F232/08 , C09D125/18 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , C08F212/14 , C08F212/32
摘要： A positive resist composition comprises a polymer comprising repeat units having formula (1) or (2). Herein denotes an aromatic hydrocarbon group, R1 is H, methyl or trifluoromethyl, R2 is H, C1-C12 alkyl or aromatic hydrocarbon group, R3 is C1-C12 alkyl, or R2 and R3 may bond together to form a ring, and a is 1 or 2. When used in the ArF lithography, the resist composition exhibits high resolution. When used in the EB image writing for mask processing, the resist composition exhibits high resolution and sensitivity sufficient to comply with high-accelerating-voltage EB irradiation, and high etch resistance.
摘要翻译：正型抗蚀剂组合物包含包含具有式（1）或（2）的重复单元的聚合物。本文表示芳族烃基，R 1为H，甲基或三氟甲基，R 2为H，C 1 -C 12烷基或芳族烃基，R 3为C 1 -C 12烷基，或R 2和R 3可以键合在一起形成环，当用于ArF光刻时，抗蚀剂组合物显示出高分辨率。当用于掩模处理的EB图像写入中时，抗蚀剂组合物显示出高分辨率和高灵敏度，足以符合高加速电压EB照射和高耐蚀刻性。

2. 发明申请

US20100129738A1 POSITIVE RESIST COMPOSITION AND PATTERING PROCESS 有权
标题翻译：积极的组合和绘图过程
公开(公告)号：US20100129738A1
公开(公告)日：2010-05-27
申请号：US12623155
申请日：2009-11-20
申请人： Katsuya Takemura , Keiichi Masunaga , Daisuke Domon , Masayoshi Sagehashi
发明人： Katsuya Takemura , Keiichi Masunaga , Daisuke Domon , Masayoshi Sagehashi
IPC分类号： G03F1/00 , C08F18/02 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0395 , C08F12/24 , C08F220/30 , C08F232/08 , C09D125/18 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , C08F212/14 , C08F212/32
摘要： A positive resist composition comprises a polymer comprising repeat units having formula (1) or (2). Herein denotes an aromatic hydrocarbon group, R1 is H, methyl or trifluoromethyl, R2 is H, C1-C12 alkyl or aromatic hydrocarbon group, R3 is C1-C12 alkyl, or R2 and R3 may bond together to form a ring, and a is 1 or 2. When used in the ArF lithography, the resist composition exhibits high resolution. When used in the EB image writing for mask processing, the resist composition exhibits high resolution and sensitivity sufficient to comply with high-accelerating-voltage EB irradiation, and high etch resistance.
摘要翻译：正型抗蚀剂组合物包含包含具有式（1）或（2）的重复单元的聚合物。本文表示芳族烃基，R 1为H，甲基或三氟甲基，R 2为H，C 1 -C 12烷基或芳族烃基，R 3为C 1 -C 12烷基，或R 2和R 3可以键合在一起形成环，当用于ArF光刻时，抗蚀剂组合物显示出高分辨率。当用于EB图像写入用于掩模处理时，抗蚀剂组合物显示出足以符合高加速电压EB照射和高耐蚀刻性的高分辨率和灵敏度。

3. 发明授权

US08835092B2 Resist underlayer film composition, process for forming resist underlayer film, patterning process and fullerene derivative 有权
标题翻译：抗蚀剂下层膜组合物，形成抗蚀剂下层膜的工艺，图案化工艺和富勒烯衍生物
公开(公告)号：US08835092B2
公开(公告)日：2014-09-16
申请号：US13015094
申请日：2011-01-27
申请人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
IPC分类号： G03F7/095 , G03F7/11 , G03F7/40 , G03F7/09 , C07C69/753 , C08L61/06
CPC分类号： C07C69/753 , C07C2604/00 , C08L61/06 , G03F7/094 , G03F7/40
摘要： There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
摘要翻译：公开了用于光刻的多层抗蚀剂膜的抗蚀剂下层膜组合物，其包含（A）具有由热不稳定基团保护的羧基的富勒烯衍生物和（B）有机溶剂。可以存在用于形成抗蚀剂底层的光刻用的多层抗蚀剂膜的抗蚀剂下层膜组合物，其中可以高度抑制基板蚀刻中的摆动的产生，并且可以使用化学放大抗蚀剂形成上层图案的中毒问题避免形成抗蚀剂下层膜的方法，图案化工艺和富勒烯衍生物。

4. 发明授权

US08741548B2 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US08741548B2
公开(公告)日：2014-06-03
申请号：US12194129
申请日：2008-08-19
申请人： Jun Hatakeyama , Takao Yoshihara , Katsuya Takemura , Yoshio Kawai
发明人： Jun Hatakeyama , Takao Yoshihara , Katsuya Takemura , Yoshio Kawai
IPC分类号： G03F7/30 , G03F7/40 , G03F7/38 , G03F7/039
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0397 , G03F7/2041 , G03F7/38 , H01L21/0274 , H01L21/3081 , H01L21/31144 , H01L21/32139
摘要： A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of up to 180 nm wavelength or EB; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.
摘要翻译：通过将第一正性抗蚀剂组合物施加到基材上，热处理，曝光，热处理和显影以形成第一抗蚀剂图案而形成图案; 使得第一抗蚀剂图案通过辐射高达180nm波长或EB的高能量辐射而交联和固化; 进一步将第二正性抗蚀剂组合物施加到基材上，进行热处理，曝光，热处理和显影以形成第二抗蚀剂图案。双重图案化工艺将图案之间的间距缩小到一半。

5. 发明授权

US08129100B2 Double patterning process 有权
标题翻译：双重图案化工艺
公开(公告)号：US08129100B2
公开(公告)日：2012-03-06
申请号：US12418090
申请日：2009-04-03
申请人： Katsuya Takemura , Jun Hatakeyama , Kazumi Noda , Mutsuo Nakashima , Masaki Ohashi , Toshinobu Ishihara
发明人： Katsuya Takemura , Jun Hatakeyama , Kazumi Noda , Mutsuo Nakashima , Masaki Ohashi , Toshinobu Ishihara
IPC分类号： G03F7/11 , G03F7/20 , G03F7/40 , G03F7/039
CPC分类号： G03F7/0035 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/40
摘要： Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer.
摘要翻译：通过涂覆化学放大的正性抗蚀剂组合物形成双重图案，所述正性抗蚀剂组合物包含含酸不稳定基团的树脂和光致酸发生剂和预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能量辐射，PEB和显影用碱性显影剂形成正的抗蚀剂图案，将正性抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆负性抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能辐射PEB，并用碱性显影剂显影以形成负的抗蚀剂图案。最后的显影步骤包括将已被转化为可溶于显影剂的正性抗蚀图案溶解的反转移步骤。

6. 发明授权

US07344827B2 Fine contact hole forming method employing thermal flow process 有权
标题翻译：采用热流程的精细接触孔成型方法
公开(公告)号：US07344827B2
公开(公告)日：2008-03-18
申请号：US10838955
申请日：2004-05-04
申请人： Katsuya Takemura , Akihiro Seki , Eiji Fukuda
发明人： Katsuya Takemura , Akihiro Seki , Eiji Fukuda
IPC分类号： G03F7/00
CPC分类号： G03F7/40 , H01L21/76802
摘要： Provided is a contact hole forming method, wherein in a thermal flow step the contact hole size can be fixed after thermal flow even if the resist material lot changes, or, wherein at the same bake temperature the contracted size, namely the flow amount, can be fixed. More specifically, provided is a contact hole forming method comprising a step of coating a resist material onto a substrate, a step of heating the coated resist material, a step of exposing the heated resist material to light through a photo mask adapted for a contact hole pattern, a step of heating the exposed resist material, a step of forming the contact hole pattern subsequently by developing with a developing fluid and a step of thermal flow treatment for heating the obtained contact hole pattern, wherein the resist material comprises an organic compound which does not react with the other components within the resist material and does not change a resolution property, and wherein when the resist material lot is changed, an amount of the organic compound to be added is changed so as to keep the contact hole pattern identical before and after the lot change.
摘要翻译：提供一种接触孔形成方法，其中在热流动步骤中，即使抗蚀剂材料批次改变，接触孔尺寸也可以在热流动之后固定，或者其中在相同的烘烤温度下，收缩尺寸即流量可以被固定。更具体地，提供了一种接触孔形成方法，包括将抗蚀剂材料涂覆到基底上的步骤，加热涂覆的抗蚀剂材料的步骤，将经加热的抗蚀剂材料曝光到通过适于接触孔的光掩模的步骤图案，加热曝光的抗蚀剂材料的步骤，随后通过用显影液显影形成接触孔图案的步骤和用于加热所获得的接触孔图案的热流动处理步骤，其中抗蚀剂材料包含有机化合物，其中不与抗蚀剂材料内的其它成分反应，也不会改变分辨率，并且，当改变抗蚀剂材料批次时，改变添加的有机化合物的量，以便使接触孔图案保持在相同之前经过多次变更。

7. 发明申请

US20060040206A1 Resist composition and patterning process 失效
公开(公告)号：US20060040206A1
公开(公告)日：2006-02-23
申请号：US11205980
申请日：2005-11-04
申请人： Mutsuo Nakashima , Yoshitaka Hamada , Katsuya Takemura , Kazumi Noda , Toshihiko Fujii
发明人： Mutsuo Nakashima , Yoshitaka Hamada , Katsuya Takemura , Kazumi Noda , Toshihiko Fujii
IPC分类号： G03C1/76
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/108
摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

8. 发明申请

US20050238993A1 Nitrogen-containing organic compound, chemically amplified resist composition and patterning process 有权
标题翻译：含氮有机化合物，化学放大抗蚀剂组合物和图案化工艺
公开(公告)号：US20050238993A1
公开(公告)日：2005-10-27
申请号：US11110927
申请日：2005-04-21
申请人： Takeru Watanabe , Koji Hasegawa , Katsuya Takemura , Kazumi Noda
发明人： Takeru Watanabe , Koji Hasegawa , Katsuya Takemura , Kazumi Noda
IPC分类号： G03F7/004 , C07D493/08 , G03C1/492 , G03F7/039 , G03F7/075 , H01L21/027
CPC分类号： G03F7/0045 , C07D493/08 , G03F7/0046 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/0757 , G03F7/0758
摘要： Chemically amplified resist compositions comprising nitrogen-containing organic compounds having a 7-oxanorbornane-2-carboxylic ester structure have an excellent resolution and provide a precise pattern profile and are useful in microfabrication using electron beams or deep-UV light.
摘要翻译：包含具有7-氧代芴烷-2-羧酸酯结构的含氮有机化合物的化学扩增抗蚀剂组合物具有优异的分辨率并提供精确的图案轮廓，并且可用于使用电子束或深紫外光的微细加工。

9. 发明申请

US20050106500A1 Nitrogen-containing organic compound, resist composition and patterning process 有权
标题翻译：含氮有机化合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20050106500A1
公开(公告)日：2005-05-19
申请号：US10984933
申请日：2004-11-10
申请人： Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Katsuya Takemura , Kazumi Noda , Katsuhiro Kobayashi
发明人： Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Katsuya Takemura , Kazumi Noda , Katsuhiro Kobayashi
IPC分类号： G03C1/492 , G03F7/004 , G03F7/038 , G03F7/039
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0382
摘要： Chemically amplified resist compositions comprising nitrogen-containing organic compounds having an aromatic carboxylic acid ester structure have an excellent resolution and provide a precise pattern profile and are useful in microfabrication using electron beams or deep-UV light.
摘要翻译：包含具有芳族羧酸酯结构的含氮有机化合物的化学扩增抗蚀剂组合物具有优异的分辨率并提供精确的图案轮廓，并且可用于使用电子束或深紫外光的微细加工。

10. 发明申请

US20050095533A1 Nitrogen-containing organic compound, resist composition and patterning process 有权
标题翻译：含氮有机化合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20050095533A1
公开(公告)日：2005-05-05
申请号：US10974759
申请日：2004-10-28
申请人： Takeru Watanabe , Takeshi Kinsho , Katsuya Takemura , Akihiro Seki
发明人： Takeru Watanabe , Takeshi Kinsho , Katsuya Takemura , Akihiro Seki
IPC分类号： G03F7/004 , C07D235/08 , C08G65/325 , G03C1/73 , G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , Y10S430/127
摘要： Resist compositions comprising nitrogen-containing organic compounds having a benzimidazole structure and a specific ether chain moiety have an excellent resolution, form precisely configured patterns with minimized roughness of sidewalls and are useful in microfabrication using electron beams or deep-UV light.
摘要翻译：包含具有苯并咪唑结构和特定醚链部分的含氮有机化合物的抗蚀剂组合物具有优异的分辨率，形成具有最小的侧壁粗糙度的精确配置的图案，并且可用于使用电子束或深紫外光的微细加工。

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