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1. 发明授权

US07741015B2 Patterning process and resist composition 有权
标题翻译：图案化过程和抗蚀剂组成
公开(公告)号：US07741015B2
公开(公告)日：2010-06-22
申请号：US12029940
申请日：2008-02-12
申请人： Jun Hatakeyama , Takao Yoshihara , Takeshi Kinsho , Koji Hasegawa , Yoshio Kawai , Katsuya Takemura
发明人： Jun Hatakeyama , Takao Yoshihara , Takeshi Kinsho , Koji Hasegawa , Yoshio Kawai , Katsuya Takemura
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0035 , G03F7/0397 , Y10S430/111 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123
摘要： A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half.
摘要翻译：通过在基材上涂布含有包含含有7-氧代降冰片烷环的重复单元和含酸不稳定基团的重复单元的聚合物和酸产生剂的正性抗蚀剂组合物形成抗蚀剂膜，对抗蚀剂膜进行热处理和曝光来形成图案用显影剂进行辐射，热处理和显影抗蚀剂膜，并使抗蚀剂膜在酸和/或热的帮助下交联和固化。然后在第一抗蚀剂图案的空间区域中形成第二抗蚀剂图案。双重图案化工艺将图案之间的间距缩小到一半。

2. 发明授权

US08741548B2 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US08741548B2
公开(公告)日：2014-06-03
申请号：US12194129
申请日：2008-08-19
申请人： Jun Hatakeyama , Takao Yoshihara , Katsuya Takemura , Yoshio Kawai
发明人： Jun Hatakeyama , Takao Yoshihara , Katsuya Takemura , Yoshio Kawai
IPC分类号： G03F7/30 , G03F7/40 , G03F7/38 , G03F7/039
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0397 , G03F7/2041 , G03F7/38 , H01L21/0274 , H01L21/3081 , H01L21/31144 , H01L21/32139
摘要： A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of up to 180 nm wavelength or EB; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.
摘要翻译：通过将第一正性抗蚀剂组合物施加到基材上，热处理，曝光，热处理和显影以形成第一抗蚀剂图案而形成图案; 使得第一抗蚀剂图案通过辐射高达180nm波长或EB的高能量辐射而交联和固化; 进一步将第二正性抗蚀剂组合物施加到基材上，进行热处理，曝光，热处理和显影以形成第二抗蚀剂图案。双重图案化工艺将图案之间的间距缩小到一半。

3. 发明授权

US5880169A Sulfonium salts and chemically amplified positive resist compositions 失效
标题翻译：锍盐和化学增幅阳性抗蚀剂组合物
公开(公告)号：US5880169A
公开(公告)日：1999-03-09
申请号：US742324
申请日：1996-11-01
申请人： Yoichi Osawa , Satoshi Watanabe , Katsuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
发明人： Yoichi Osawa , Satoshi Watanabe , Katsuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
IPC分类号： G03F7/004 , G03F7/039 , G03F7/038
CPC分类号： G03F7/0045
摘要： The invention provides a novel sulfonium salt having at least one acid labile group attached to a phenyl group in a molecule and a normal, branched or cyclic C.sub.1 -C.sub.20 alkylsulfonate anion. The novel sulfonium salt is effective for increasing the dissolution contrast between exposed and unexposed areas. Upon exposure, it generates an alkylsulfonic acid which is a weak acid, minimizing the influence of side reaction and deactivation during PEB step. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.
摘要翻译：本发明提供了一种新的锍盐，其具有至少一个与分子中的苯基连接的酸不稳定基团以及正，支链或环状的C 1 -C 20烷基磺酸根阴离子。新型锍盐对于增加曝光和未曝光区域之间的溶解度对比是有效的。暴露后，产生弱酸的烷基磺酸，使PEB步骤中副反应和失活的影响最小化。锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

4. 发明授权

US5856561A Bisphenol carboxylic acid tertiary ester derivatives and chemically amplified positive resist compositions 失效
标题翻译：双酚羧酸叔酯衍生物和化学放大正型抗蚀剂组合物
公开(公告)号：US5856561A
公开(公告)日：1999-01-05
申请号：US710298
申请日：1996-09-17
申请人： Takesi Nagata , Satoshi Watanabe , Katsuya Takemura , Tsunehiro Nishi , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
发明人： Takesi Nagata , Satoshi Watanabe , Katsuya Takemura , Tsunehiro Nishi , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
IPC分类号： G03F7/004 , C07C69/734 , C08F12/00 , C08F12/22 , C08K5/10 , C08K5/107 , C08L25/00 , C08L25/08 , C08L25/18 , G03F7/039 , H01L21/027 , C07C69/76
CPC分类号： C07C69/734
摘要： Novel bisphenol carboxylic acid tertiary ester derivatives having two aromatic ether groups and an ester group which are all replaced by acid labile groups are provided. The derivatives are used as a dissolution inhibitor in a chemically amplified positive resist composition comprising an organic solvent, an alkali soluble resin, and a photo-acid generator. Since the dissolution inhibitor has a highly reactive acetal group as an acid labile group, its coupling-off rapidly takes place after exposure. The dissolution inhibitor itself is less alkali soluble and its acid decomposition product is a phenol derivative having a carboxylic acid group with high alkali solubility, leading to a high dissolution contrast.
摘要翻译：提供了具有两个芳族醚基团和酯基的新的双酚羧酸叔酯衍生物，它们均被酸不稳定基团所取代。该衍生物在包含有机溶剂，碱溶性树脂和光酸发生剂的化学放大型正性抗蚀剂组合物中用作溶解抑制剂。由于溶解抑制剂具有作为酸不稳定基团的高反应性缩醛基团，因此其暴露后快速发生偶联。溶解抑制剂本身的碱溶性较小，其酸分解产物是具有高碱溶性的羧酸基的苯酚衍生物，导致高的溶解对比度。

5. 发明授权

US5612170A Positive resist composition 失效
标题翻译：正抗蚀剂组成
公开(公告)号：US5612170A
公开(公告)日：1997-03-18
申请号：US569659
申请日：1995-12-08
申请人： Katsuya Takemura , Junji Tsuchiya , Toshinobu Ishihara , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
发明人： Katsuya Takemura , Junji Tsuchiya , Toshinobu Ishihara , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
IPC分类号： G03F7/004 , G03F7/075 , G03C1/73
CPC分类号： G03F7/0045 , G03F7/0755 , G03F7/0757 , Y10S430/115 , Y10S430/122
摘要： A positive resist composition based on a silicone polymer contains a photo acid generator which will decompose to generate an acid upon exposure to radiation. The silicone polymer includes hydroxybenzyl units wherein some OH groups are replaced by t-butoxycarbonyl, t-butoxycarbonylmethyl, trimethylsilyl or tetrahydropyranyl groups. In a first form, the photo acid generator is a specific onium salt having at least one phenyl group with a t-alkoxy, t-butoxycarbonyloxy or t-butoxycarbonylmethoxy substituent. In a second form, the composition further contains a nitrogenous compound. In a third form, the composition further contains a dissolution inhibitor in the form of a specific silicone compound. The composition is sensitive to high energy radiation and has high sensitivity and resolution.
摘要翻译：基于有机硅聚合物的正型抗蚀剂组合物含有光致酸产生剂，其将在暴露于辐射时分解产生酸。有机硅聚合物包括其中一些OH基被叔丁氧基羰基，叔丁氧基羰基甲基，三甲基甲硅烷基或四氢吡喃基代替的羟基苄基单元。在第一种形式中，光酸产生剂是具有至少一个具有叔烷氧基，叔丁氧基羰基氧基或叔丁氧基羰基甲氧基取代基的苯基的特定鎓盐。在第二种形式中，组合物还含有含氮化合物。在第三种形式中，组合物还含有特定硅氧烷化合物形式的溶解抑制剂。该成分对高能辐射敏感，灵敏度高，分辨率高。

6. 发明申请

US20070026341A1 Resist protective coating material and patterning process 有权
标题翻译：抵抗保护涂料和图案化过程
公开(公告)号：US20070026341A1
公开(公告)日：2007-02-01
申请号：US11492957
申请日：2006-07-26
申请人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai , Masayuki Endo , Masaru Sasago , Haruhiko Komoriya , Michitaka Ootani , Satoru Miyazawa , Kazuhiko Maeda
发明人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai , Masayuki Endo , Masaru Sasago , Haruhiko Komoriya , Michitaka Ootani , Satoru Miyazawa , Kazuhiko Maeda
IPC分类号： G03C1/00
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A resist protective coating material is provided comprising an α-trifluoromethylacrylic acid/norbornene copolymer having cyclic perfluoroalkyl groups as pendant. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography.
摘要翻译：提供抗蚀剂保护涂层材料，其包含具有环状全氟烷基的α-三氟甲基丙烯酸/降冰片烯共聚物作为侧基。在图案形成过程中，材料在抗蚀剂膜上形成保护性涂层，其是不溶于水的，可溶于碱性显影剂中并且与抗蚀剂膜不混溶，从而有效地实施浸渍光刻。

7. 发明授权

US06875556B2 Resist compositions and patterning process 有权
标题翻译：抗蚀剂组合物和图案化工艺
公开(公告)号：US06875556B2
公开(公告)日：2005-04-05
申请号：US10690777
申请日：2003-10-23
申请人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Haruhiko Komoriya , Satoru Miyazawa
发明人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Haruhiko Komoriya , Satoru Miyazawa
IPC分类号： C08F220/26 , C08F228/02 , C08F232/04 , C08F236/20 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0046 , G03F7/0392 , G03F7/0397 , Y10S430/108 , Y10S430/111
摘要： A resist composition comprising as the base resin a blend of a fluorinated polymer which is sensitive to high-energy radiation and highly transparent at a wavelength of up to 200 nm and a sulfonate-containing polymer exhibiting a high contrast upon alkali dissolution is improved in transparency and alkali dissolution contrast as well as plasma etching resistance.
摘要翻译：抗蚀剂组合物包含作为基础树脂的在高达200nm的波长下对高能量辐射敏感且高度透明的含氟聚合物的共混物和在碱溶解时显示出高对比度的含磺酸盐的聚合物的透明度和碱溶性对比度以及等离子体耐蚀刻性。

8. 发明授权

US06710148B2 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06710148B2
公开(公告)日：2004-03-23
申请号：US10068298
申请日：2002-02-08
申请人： Yuji Harada , Jun Hatakeyama , Jun Watanabe , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
发明人： Yuji Harada , Jun Hatakeyama , Jun Watanabe , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
IPC分类号： C08F11800
CPC分类号： G03F7/0395 , C08F232/08 , G03F7/0046 , G03F7/0397
摘要： A copolymer of an acrylate monomer containing fluorine at &agr;-position with a norbornene derivative is highly transparent to VUV radiation and resistant to dry etching. A resist composition using the resin as a base polymer is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.
摘要翻译：在α-位含氟的丙烯酸酯单体与降冰片烯衍生物的共聚物对VUV辐射是高度透明的并且耐干蚀刻。使用树脂作为基础聚合物的抗蚀剂组合物对于低于200nm的高能辐射敏感，具有优异的灵敏度，并且适用于光刻微处理。

9. 发明授权

US08617800B2 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US08617800B2
公开(公告)日：2013-12-31
申请号：US12458884
申请日：2009-07-27
申请人： Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
发明人： Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
IPC分类号： G03F7/26
CPC分类号： H01L21/0332 , H01L21/0275 , H01L21/0337
摘要： There is disclosed a patterning process including steps of at least: forming a photoresist film on a substrate; exposing the photoresist film to a high energy beam; developing by using a developer; forming a photoresist pattern; and then forming a spacer on the photoresist pattern sidewall, thereby forming a pattern on the substrate, a patterning process, wherein at least the photoresist pattern having the hardness of 0.4 GPa or more or the Young's modulus of 9.2 GPa or more as a film strength is formed, and a pattern is formed on the substrate by forming a silicon oxide film as the spacer on the photoresist pattern sidewall. There can be provided a patterning process without causing a deformation of a resist pattern and an increase in LWR at the time of forming a silicon oxide film on a photoresist pattern.
摘要翻译：公开了一种图案化工艺，其包括至少在衬底上形成光致抗蚀剂膜的步骤; 将光致抗蚀剂膜暴露于高能量束; 使用开发商开发; 形成光致抗蚀剂图案; 然后在光致抗蚀剂图案侧壁上形成间隔物，从而在基板上形成图案，图案化工艺，其中至少具有0.4GPa或更高的硬度的光刻胶图案或9.2GPa或更大的杨氏模量作为膜强度并且通过在光致抗蚀剂图案侧壁上形成作为间隔物的氧化硅膜在衬底上形成图案。可以提供图案化工艺，而不会在抗蚀剂图案上形成氧化硅膜时引起抗蚀剂图案的变形和增加的LWR。

10. 发明授权

US08367310B2 Pattern forming process and resist-modifying composition 有权
标题翻译：图案形成工艺和抗蚀剂改性组合物
公开(公告)号：US08367310B2
公开(公告)日：2013-02-05
申请号：US12708196
申请日：2010-02-18
申请人： Takeru Watanabe , Masashi Iio , Jun Hatakeyama , Tsunehiro Nishi , Yoshio Kawai
发明人： Takeru Watanabe , Masashi Iio , Jun Hatakeyama , Tsunehiro Nishi , Yoshio Kawai
IPC分类号： G03F7/26
CPC分类号： G03F7/0397 , G03F7/0035 , G03F7/40
摘要： A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.
摘要翻译：图案化工艺包括（1）涂覆和烘烤第一正性抗蚀剂组合物以形成第一抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物施加到第一抗蚀剂图案和加热以修饰第一抗蚀剂图案，（3）涂覆和烘烤第二正性抗蚀剂组合物以形成第二抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。改性的第一抗蚀剂膜与纯水的接触角为50°-85°。

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