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1. 发明授权

US08853031B2 Resist underlayer film composition and patterning process using the same 有权
标题翻译：抗蚀剂下层膜组合物和使用其的图案化工艺
公开(公告)号：US08853031B2
公开(公告)日：2014-10-07
申请号：US13313650
申请日：2011-12-07
申请人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho
发明人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho
IPC分类号： H01L21/336 , C08G10/02 , G03F7/09
CPC分类号： C08G10/02 , G03F7/094
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译：公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种由以下通式（1-1）和/或（1-2）表示的化合物的缩合得到的聚合物，以及一种或更多种由以下通式（2-1）和/或（2-2）表示的化合物和/或其等价物。可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值作为抗反射膜的下层膜）的三层抗蚀剂工艺的下层膜组合物，特别是在60nm以上的高方位线上，特别是在蚀刻后，不会引起线下落或翘曲，以及使用其的图案化处理。

2. 发明申请

US20130056654A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：积极的组合和绘图过程
公开(公告)号：US20130056654A1
公开(公告)日：2013-03-07
申请号：US13586602
申请日：2012-08-15
申请人： Jun HATAKEYAMA , Daisuke KORI
发明人： Jun HATAKEYAMA , Daisuke KORI
IPC分类号： G03F7/004 , G21K5/00 , G03F7/20
CPC分类号： G03F1/00 , G03F7/0397 , G03F7/085 , G03F7/105
摘要： The invention provides a positive resist composition comprising, as base resins contained therein, (A) a polymer having a weight-average molecular weight of 1000 to 500000 and containing a repeating unit which contains a structure having a hydrogen atom of a carboxyl group thereof substituted with an acid-labile group having a cyclic structure and (B) a novolak resin of a substituted or an unsubstituted fluorescein, and in addition, a photo acid generator. There can be provided a positive resist composition having an appropriate absorption to form a pattern on a highly reflective substrate with excellent pattern profile after light exposure, adhesion, implantation characteristics onto a non-planar substrate, and in addition, ion implantation resistance at the time of ion implantation; and to provide a patterning process.
摘要翻译：本发明提供一种正型抗蚀剂组合物，其包含作为其中所含的基础树脂的（A）重均分子量为1000〜500000的聚合物，其含有具有取代基的羧基的氢原子的结构的重复单元具有环状结构的酸不稳定基团和（B）取代或未取代的荧光素的酚醛清漆树脂，另外还有光酸产生剂。可以提供具有适当吸收的正性抗蚀剂组合物，以在曝光后具有优异的图案轮廓的高反射性基板上形成图案，在非平面基板上粘附，注入特性，此外，此时的离子注入电阻的离子注入; 并提供图案化工艺。

3. 发明申请

US20120184103A1 RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME 有权
标题翻译：使用相同的底漆膜组合物和图案处理方法
公开(公告)号：US20120184103A1
公开(公告)日：2012-07-19
申请号：US13313650
申请日：2011-12-07
申请人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO
发明人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO
IPC分类号： H01L21/3105 , C08L61/12 , C08L61/08 , C08G8/04
CPC分类号： C08G10/02 , G03F7/094
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译：公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种由以下通式（1-1）和/或（1-2）表示的化合物的缩合得到的聚合物，以及一种或更多种由以下通式（2-1）和/或（2-2）表示的化合物和/或其等价物。可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值作为抗反射膜的下层膜）的三层抗蚀剂工艺的下层膜组合物，特别是在60nm以上的高方位线上，特别是在蚀刻后，不会引起线下落或翘曲，以及使用其的图案化处理。

4. 发明申请

US20120108071A1 RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME 有权
标题翻译：使用相同的底漆膜组合物和图案处理方法
公开(公告)号：US20120108071A1
公开(公告)日：2012-05-03
申请号：US13269290
申请日：2011-10-07
申请人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Toshihiko FUJII , Takeru WATANABE , Takeshi KINSHO
发明人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Toshihiko FUJII , Takeru WATANABE , Takeshi KINSHO
IPC分类号： H01L21/312 , C09D161/12 , C09D161/08
CPC分类号： G03F7/091 , G03F7/094
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, namely, an underlayer film having optimum n-value and k-value, excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译：公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物缩合得到的聚合物，以及一种或多种更多种由下列通式（2）表示的化合物和/或其等价物。可以提供一种特别用于三层抗蚀剂工艺的下层膜组合物，其可以形成具有降低的反射率的下层膜，即具有最佳n值和k值的底层膜，优异的填充性，抗蚀性能，并且特别是在比60nm薄的高方位线中，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化工艺。

5. 发明申请

US20110311920A1 NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, RESIST BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS 有权
标题翻译：萘衍生物，抗蚀剂底层材料，电阻层成型方法和图案处理
公开(公告)号：US20110311920A1
公开(公告)日：2011-12-22
申请号：US13165536
申请日：2011-06-21
申请人： Takeshi Kinsho , Katsuya Takemura , Daisuke Kori , Takeru Watanabe , Tsutomu Ogihara
发明人： Takeshi Kinsho , Katsuya Takemura , Daisuke Kori , Takeru Watanabe , Tsutomu Ogihara
IPC分类号： G03F7/20 , C07D311/78 , B05D3/12 , C08G65/00 , B05D3/10 , C07C43/20 , C07D307/77
CPC分类号： C07C43/275 , B05D3/10 , B05D3/12 , C07C43/20 , C07C2603/18 , C07D307/77 , C07D311/78 , C08G65/00 , C09D201/06 , G03F7/0397 , G03F7/091
摘要： A naphthalene derivative having formula (1) is provided wherein cyclic structures Ar1 and Ar2 denote a benzene or naphthalene ring, X is a single bond or C1-C10 alkylene, m is 0 or 1, and n is such a natural number as to provide a molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.
摘要翻译：提供具有式（1）的萘衍生物，其中环状结构Ar1和Ar2表示苯或萘环，X为单键或C1-C10亚烷基，m为0或1，n为自然数，提供分子量高达100,000。包含萘衍生物或包含萘衍生物的聚合物的材料被旋涂以形成具有改进性能的抗蚀剂底层。通过旋涂形成的抗蚀剂底层与通过CVD形成的无机硬掩模组合的图案形成方法是可用的。

6. 发明申请

US20110195362A1 RESIST UNDERLAYER FILM COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS AND FULLERENE DERIVATIVE 有权
标题翻译：抗静电膜组合物，形成电阻膜的方法，方法和全氟烷烃衍生物
公开(公告)号：US20110195362A1
公开(公告)日：2011-08-11
申请号：US13015094
申请日：2011-01-27
申请人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
IPC分类号： G03F7/20 , C07C69/753 , C09D7/12 , C08L61/02 , B05D3/02 , B05D7/24 , B82Y20/00
CPC分类号： C07C69/753 , C07C2604/00 , C08L61/06 , G03F7/094 , G03F7/40
摘要： There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
摘要翻译：公开了用于光刻的多层抗蚀剂膜的抗蚀剂下层膜组合物，其包含（A）具有由热不稳定基团保护的羧基的富勒烯衍生物和（B）有机溶剂。可以存在用于形成抗蚀剂底层的光刻用的多层抗蚀剂膜的抗蚀剂下层膜组合物，其中可以高度抑制基板蚀刻中的摆动的产生，并且可以使用化学放大抗蚀剂形成上层图案的中毒问题避免形成抗蚀剂下层膜的方法，图案化工艺和富勒烯衍生物。

7. 发明申请

US20100194221A1 PERMANENT MAGNET ELECTRICAL ROTATING MACHINE, WIND POWER GENERATING SYSTEM, AND A METHOD OF MAGNETIZING A PERMANENT MAGNET 有权
标题翻译：永磁电动旋转机，风力发电系统，以及永磁体磁化方法
公开(公告)号：US20100194221A1
公开(公告)日：2010-08-05
申请号：US12754047
申请日：2010-04-05
申请人： Daisuke KORI , Tetsuo Fujigaki , Shuji Aizawa , Motonobu Iizuka , Yasushi Iwai , Hiroyuki Mikami , Mamoru Kimura
发明人： Daisuke KORI , Tetsuo Fujigaki , Shuji Aizawa , Motonobu Iizuka , Yasushi Iwai , Hiroyuki Mikami , Mamoru Kimura
IPC分类号： H02K1/32 , F03D9/00
CPC分类号： H02K1/325 , H02K1/223 , H02K1/276 , H02K1/2766 , H02K7/1838 , H02K2213/03
摘要： A permanent magnet electrical rotating machine having a permanent magnet rotor and a stator, wherein:a plurality of permanent magnets are disposed in a rotor iron core of the permanent magnet rotor along a periphery of the rotor iron core, polarities thereof being alternately changed;a cooling airflow channel is formed between each pair of adjacent opposite poles on the rotor iron core; and the cooling airflow channel has an approximately trapezoidal shape on an outer periphery side of the rotor iron core; and extends from an end on a central side in a radial direction of the approximately trapezoidal shape to a radial center.
摘要翻译：一种具有永磁转子和定子的永磁电动旋转机械，其特征在于：永久磁铁转子的转子铁芯沿转子铁芯的周边配置多个永久磁铁，其极性交替变化; 在转子铁芯上的每对相邻的相对极之间形成冷却气流通道; 并且冷却气流通道在转子铁心的外周侧具有大致梯形形状; 并从大致梯形形状的径向的中央侧的端部延伸到径向中心。

8. 发明授权

US08846846B2 Naphthalene derivative, resist bottom layer material, and patterning process 有权
标题翻译：萘衍生物，抗蚀底层材料和图案化工艺
公开(公告)号：US08846846B2
公开(公告)日：2014-09-30
申请号：US13227754
申请日：2011-09-08
申请人： Takeshi Kinsho , Daisuke Kori , Katsuya Takemura , Takeru Watanabe , Tsutomu Ogihara
发明人： Takeshi Kinsho , Daisuke Kori , Katsuya Takemura , Takeru Watanabe , Tsutomu Ogihara
IPC分类号： H01L21/311 , C08G8/02 , G03F7/004 , H01L21/31 , G03F7/09
CPC分类号： C08G61/10 , B05D1/40 , B05D3/007 , G03F7/00 , G03F7/091 , G03F7/20
摘要： A naphthalene derivative having formula (1) is provided wherein Ar1 and Ar2 denote a benzene or naphthalene ring, and n is such a natural number as to provide a weight average molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.
摘要翻译：提供具有式（1）的萘衍生物，其中Ar1和Ar2表示苯或萘环，n是这样的自然数，以提供高达100,000的重均分子量。包含萘衍生物或包含萘衍生物的聚合物的材料被旋涂以形成具有改进性能的抗蚀剂底层。通过旋涂形成的抗蚀剂底层与通过CVD形成的无机硬掩模组合的图案形成方法是可用的。

9. 发明授权

US08795955B2 Naphthalene derivative, resist bottom layer material, resist bottom layer forming method, and patterning process 有权
标题翻译：萘衍生物，抗蚀剂底层材料，抗蚀剂底层形成方法和图案化工艺
公开(公告)号：US08795955B2
公开(公告)日：2014-08-05
申请号：US13165536
申请日：2011-06-21
申请人： Takeshi Kinsho , Katsuya Takemura , Daisuke Kori , Takeru Watanabe , Tsutomu Ogihara
发明人： Takeshi Kinsho , Katsuya Takemura , Daisuke Kori , Takeru Watanabe , Tsutomu Ogihara
IPC分类号： G03F7/20 , C07D311/78 , B05D3/12 , C08G65/00 , B05D3/10 , C07C43/20 , C07D307/77 , C07C43/275 , C09D201/06
CPC分类号： C07C43/275 , B05D3/10 , B05D3/12 , C07C43/20 , C07C2603/18 , C07D307/77 , C07D311/78 , C08G65/00 , C09D201/06 , G03F7/0397 , G03F7/091
摘要： A naphthalene derivative having formula (1) is provided wherein cyclic structures Ar1 and Ar2 denote a benzene or naphthalene ring, X is a single bond or C1-C20 alkylene, m is 0 or 1, and n is such a natural number as to provide a molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.
摘要翻译：提供具有式（1）的萘衍生物，其中环状结构Ar1和Ar2表示苯或萘环，X为单键或C1-C20亚烷基，m为0或1，n为自然数，提供分子量高达100,000。包含萘衍生物或包含萘衍生物的聚合物的材料被旋涂以形成具有改进性能的抗蚀剂底层。通过旋涂形成的抗蚀剂底层与通过CVD形成的无机硬掩模组合的图案形成方法是可用的。

10. 发明授权

US08760095B2 Rotator control device, rotator system, vehicle, electric car and electric generation system 有权
标题翻译：转子控制装置，转子系统，车辆，电动汽车和发电系统
公开(公告)号：US08760095B2
公开(公告)日：2014-06-24
申请号：US13316841
申请日：2011-12-12
申请人： Yoshitaka Iwaji , Daigo Kaneko , Kento Mochizuki , Takeshi Shinomiya , Daisuke Kori , Seikichi Masuda
发明人： Yoshitaka Iwaji , Daigo Kaneko , Kento Mochizuki , Takeshi Shinomiya , Daisuke Kori , Seikichi Masuda
IPC分类号： H02P6/14
CPC分类号： H02P29/02
摘要： To prevent demagnetization of a permanent magnet synchronous rotating machine, a rotating machine control device according to the present invention is a rotating machine control device comprising: a power converter having a switch part on each of a positive side and a negative side for each phase; and short circuit detection unit for detecting a short circuit of the switch part, wherein a command to turn on positive-side switches and negative-side switches of a plurality of phases of the switch part is issued in the case where the short circuit detection unit detects the short circuit.
摘要翻译：为了防止永磁同步旋转电机的退磁，根据本发明的旋转机械控制装置是一种旋转机械控制装置，包括：功率转换器，其具有用于每相的正侧和负侧的开关部分; 以及短路检测单元，用于检测开关部分的短路，其中在短路检测单元的情况下，发出接通开关部分的多相的正侧开关和负侧开关的指令检测短路。

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