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    • 4. 发明授权
    • Resist composition and patterning process
    • 抗蚀剂组成和图案化工艺
    • US08592133B2
    • 2013-11-26
    • US13427621
    • 2012-03-22
    • Satoshi WatanabeAkinobu TanakaTakeru WatanabeTakeshi Kinsho
    • Satoshi WatanabeAkinobu TanakaTakeru WatanabeTakeshi Kinsho
    • G03F7/00G03F7/20G03F7/028G03F7/40G03F1/08
    • G03F7/0045G03F7/0382Y10S430/114Y10S430/128
    • The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
    • 本发明涉及:抗蚀剂组合物,例如化学放大抗蚀剂组合物,除了在微制造的光刻中具有更高分辨率之外,甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形,特别是在光刻 采用KrF激光,ArF激光,F2激光,超短紫外光,电子束,X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。 本发明提供一种化学放大抗蚀剂组合物,其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物(除了具有包含在芳环的环结构中的胺或氧化胺的氮原子的那些) 并且不具有与氮原子共价键合的氢原子作为碱性中心。
    • 6. 发明申请
    • RESIST COMPOSITION AND PATTERNING PROCESS
    • 耐腐蚀组合物和方法
    • US20120183893A1
    • 2012-07-19
    • US13427653
    • 2012-03-22
    • Satoshi WATANABEAkinobu TANAKATakeru WATANABETakeshi KINSHO
    • Satoshi WATANABEAkinobu TANAKATakeru WATANABETakeshi KINSHO
    • G03F1/76
    • G03F7/0045G03F7/0382Y10S430/114Y10S430/128
    • The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
    • 本发明涉及:抗蚀剂组合物,例如化学放大抗蚀剂组合物,除了在微制造的光刻中具有更高分辨率之外,甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形,特别是在光刻 采用KrF激光,ArF激光,F2激光,超短紫外光,电子束,X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。 本发明提供一种化学放大抗蚀剂组合物,其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物(除了具有包含在芳环的环结构中的胺或氧化胺的氮原子的那些) 并且不具有与氮原子共价键合的氢原子作为碱性中心。