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1. 发明授权

US5368062A Gas supplying system and gas supplying apparatus 失效
标题翻译：供气系统和供气装置
公开(公告)号：US5368062A
公开(公告)日：1994-11-29
申请号：US010325
申请日：1993-01-28
申请人： Katsuya Okumura , Yoshihisa Sudo , Kenichi Goshima , Hiroshi Itafuji , Akihiro Kojima
发明人： Katsuya Okumura , Yoshihisa Sudo , Kenichi Goshima , Hiroshi Itafuji , Akihiro Kojima
IPC分类号： C23C16/44 , C23C16/455 , F17C5/06 , F16K11/20
CPC分类号： C23C16/45512 , C23C16/4401 , C23C16/4408 , C23C16/455 , C23C16/45561 , F17C5/06 , F17C2205/0323 , F17C2205/0382 , F17C2227/044 , F17C2250/0636 , F17C2260/042 , F17C2270/0518 , Y10T137/4259 , Y10T137/86445 , Y10T137/87249
摘要： A gas supplying system for supplying a corrosive gas or the like to a semiconductor manufacturing apparatus or the like. A plurality of kinds of component gases are introduced into a chamber and mixed therein to form a desired supply gas. After supplying the desired supply gas, the chamber is evacuated and an inert gas is charged into the chamber to substitute a residual supply gas remaining in the chamber by the inert gas. The evacuation of the chamber and the charging of the inert gas into the chamber are repeated two or more times. Accordingly, the residual supply gas can be efficiently removed from the chamber and substituted by the inert gas.
摘要翻译：用于向半导体制造装置等供给腐蚀性气体等的气体供给系统。将多种组分气体引入室中并混合在其中以形成所需的供给气体。在供应期望的供应气体之后，将室抽真空，并将惰性气体装入室中以用惰性气体代替残留在室中的残留供应气体。将室抽真空并将惰性气体充入室中重复两次或更多次。因此，能够从室中有效地除去残留的供给气体，并被惰性气体取代。

2. 发明授权

US06846750B1 High precision pattern forming method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的高精度图案形成方法
公开(公告)号：US06846750B1
公开(公告)日：2005-01-25
申请号：US09604724
申请日：2000-06-28
申请人： Tokuhisa Ohiwa , Shoji Seta , Nobuo Hayasaka , Katsuya Okumura , Akihiro Kojima , Junko Ohuchi , Tsukasa Azuma , Hideo Ichinose , Ichiro Mizushima
发明人： Tokuhisa Ohiwa , Shoji Seta , Nobuo Hayasaka , Katsuya Okumura , Akihiro Kojima , Junko Ohuchi , Tsukasa Azuma , Hideo Ichinose , Ichiro Mizushima
IPC分类号： H01L21/302 , H01L21/033 , H01L21/30 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/316 , H01L21/768 , H01L21/461
CPC分类号： H01L21/76802 , H01L21/0331 , H01L21/31111 , H01L21/31116 , H01L21/31604 , H01L21/31616 , H01L21/76816 , H01L21/7682
摘要： According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.
摘要翻译：根据本发明，提供一种制造半导体器件的方法，其中使用可溶于溶解液的可溶性薄膜。根据本发明的方法，当在要被图案化的被处理膜和掩模图案之间形成可溶性薄膜时，可以通过剥离来去除掩模图案。另一方面，当薄膜用于形成空气布线结构的虚拟层时，可以去除虚拟层而不用氧等离子体进行灰化。

3. 发明授权

US09184357B2 Light emitting device and method for manufacturing same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US09184357B2
公开(公告)日：2015-11-10
申请号：US13310384
申请日：2011-12-02
申请人： Yoshiaki Sugizaki , Hideki Shibata , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu , Akihiro Kojima
发明人： Yoshiaki Sugizaki , Hideki Shibata , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu , Akihiro Kojima
IPC分类号： H01L33/00 , H01L33/44 , H01L33/38 , H01L33/62 , H01L23/00 , H01L25/075 , H01L33/34 , H01L33/48 , H01L33/58
CPC分类号： H01L33/62 , H01L24/02 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/16 , H01L25/0753 , H01L33/0079 , H01L33/34 , H01L33/38 , H01L33/44 , H01L33/486 , H01L33/50 , H01L33/58 , H01L2224/02375 , H01L2224/0401 , H01L2224/05012 , H01L2224/05552 , H01L2224/05555 , H01L2224/05571 , H01L2224/06132 , H01L2224/06152 , H01L2224/13023 , H01L2224/13099 , H01L2224/131 , H01L2224/81801 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12042 , H01L2933/0016 , H01L2933/0033 , H01L2933/0041 , H01L2933/0066 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/014 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A method for manufacturing a light emitting device includes forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate. A dielectric film on a second surface side opposite to the first surface of the multilayer body is formed having first and second openings on a p-side electrode and an n-side electrode. A seed metal on the dielectric film and an exposed surface of the first and second openings form a p-side metal interconnect layer and an n-side metal interconnect layer separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal. A resin is formed in a space from which the seed metal is removed.
摘要翻译：一种制造发光器件的方法包括：形成包括发光层的多层体，使得其第一表面与透光性基板的第一表面侧相邻。在与p层电极和n侧电极之间形成有第一和第二开口的与多层体的第一表面相对的第二表面侧上的电介质膜形成。电介质膜上的种子金属和第一和第二开口的暴露表面形成将种子金属分离成p侧金属和n侧籽晶的p侧金属互连层和n侧金属互连层金属，通过去除一部分种子金属。在除去种子金属的空间中形成树脂。

4. 发明授权

US08987020B2 Semiconductor light-emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08987020B2
公开(公告)日：2015-03-24
申请号：US13611393
申请日：2012-09-12
申请人： Akihiro Kojima , Yoshiaki Sugizaki
发明人： Akihiro Kojima , Yoshiaki Sugizaki
IPC分类号： H01L33/50 , H01L23/00 , H01L33/36 , H01L33/38 , H01L33/00 , H01L33/20 , H01L33/44 , H01L33/48 , H01L33/62
CPC分类号： H01L33/507 , H01L24/10 , H01L24/94 , H01L24/95 , H01L24/96 , H01L24/97 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/44 , H01L33/486 , H01L33/50 , H01L33/62 , H01L2224/16 , H01L2924/12041 , H01L2924/12042 , H01L2933/0041 , H01L2924/00
摘要： A method for manufacturing a semiconductor light-emitting device includes forming a multilayer body including a first semiconductor layer having a first major surface and a second major surface which is an opposite side from the first major surface, a second semiconductor layer including a light-emitting layer laminated on the second major surface of the first semiconductor layer, and electrodes formed on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer. The method includes forming a groove through the first semiconductor layer. The method includes forming a phosphor layer on the first major surface and on a side surface of the first semiconductor layer in the groove.
摘要翻译：一种制造半导体发光器件的方法，包括：形成多层体，该多层体包括具有第一主表面的第一半导体层和与第一主表面相反一侧的第二主表面，第二半导体层包括发光层叠在第一半导体层的第二主表面上的电极以及形成在第一半导体层的第二主表面上的电极和在第二半导体层的与第一半导体层相反的一侧的表面上。该方法包括通过第一半导体层形成沟槽。该方法包括在槽的第一主表面和第一半导体层的侧表面上形成磷光体层。

5. 发明授权

US08963189B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08963189B2
公开(公告)日：2015-02-24
申请号：US13052250
申请日：2011-03-21
申请人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki
发明人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki
IPC分类号： H01L33/00 , H01L33/62 , H01L27/15 , H01L33/48
CPC分类号： H01L33/62 , H01L27/153 , H01L33/0079 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和第二金属柱绝缘层。半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。第一互连层的一部分的边缘从第一绝缘层和第二绝缘层横向暴露。

6. 发明授权

US08958574B2 Strain and pressure sensing device, microphone, method for manufacturing strain and pressure sensing device, and method for manufacturing microphone 有权
标题翻译：应变和压力感测装置，麦克风，制造应变和压力感测装置的方法以及制造麦克风的方法
公开(公告)号：US08958574B2
公开(公告)日：2015-02-17
申请号：US13536002
申请日：2012-06-28
申请人： Hideaki Fukuzawa , Tatsuya Ohguro , Akihiro Kojima , Yoshiaki Sugizaki , Mariko Takayanagi , Yoshihiko Fuji , Akio Hori , Michiko Hara
发明人： Hideaki Fukuzawa , Tatsuya Ohguro , Akihiro Kojima , Yoshiaki Sugizaki , Mariko Takayanagi , Yoshihiko Fuji , Akio Hori , Michiko Hara
IPC分类号： H04R3/00 , G01L9/00 , H04R1/08 , B81C1/00 , H04R19/00 , H04R19/04 , H04R31/00
CPC分类号： B81C1/00158 , B81B2201/0264 , B81C1/00246 , B81C2203/0771 , G01L9/0042 , H04R1/08 , H04R19/005 , H04R19/04 , H04R31/00
摘要： According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.
摘要翻译：根据一个实施例，应变和压力感测装置包括半导体电路单元和感测单元。半导体电路单元包括半导体衬底和晶体管。晶体管设置在半导体衬底上。感测单元设置在半导体电路单元上，并且具有空间和非空间部分。非空间部分与空间部分并置。感测单元还包括可移动光束，应变传感元件单元以及第一和第二掩埋互连。可移动光束具有固定和可移动部分，并且包括第一和第二互连层。固定部固定在非空间部。可动部分与晶体管分离，并从固定部分延伸到空间部分。应变传感元件单元固定在可动部上。第一和第二掩埋互连件设置在非空间部分中。

7. 发明授权

US08772810B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08772810B2
公开(公告)日：2014-07-08
申请号：US13601487
申请日：2012-08-31
申请人： Yoshiaki Sugizaki , Akihiro Kojima , Hideto Furuyama , Yosuke Akimoto
发明人： Yoshiaki Sugizaki , Akihiro Kojima , Hideto Furuyama , Yosuke Akimoto
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/647 , H01L25/0753 , H01L33/0095 , H01L33/20 , H01L33/385 , H01L33/502 , H01L33/505 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first face, a second face, a side face, and a light emitting layer; a p-side electrode provided on the second face; an n-side electrode provided on the side face; a first p-side metal layer provided on the p-side electrode; a first n-side metal layer provided on the periphery of the n-side electrode; a first insulating layer provided on a face on the second face side in the first n-side metal layer; a second p-side metal layer connected with the first p-side metal layer on the first p-side metal layer, and provided, extending from on the first p-side metal layer to on the first insulating layer; and a second n-side metal layer provided on a face on the second face side in the first n-side metal layer in a peripheral region of the semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括：包括第一面，第二面，侧面和发光层的半导体层; 设置在所述第二面上的p侧电极; 设置在所述侧面上的n侧电极; 设置在p侧电极上的第一p侧金属层; 设置在n侧电极的周围的第一n侧金属层; 设置在第一n侧金属层的第二面侧的面上的第一绝缘层; 第二p侧金属层，与第一p侧金属层上的第一p侧金属层连接，并且从第一p侧金属层延伸到第一绝缘层; 以及设置在半导体层的周边区域中的第一n侧金属层的第二面侧的面上的第二n侧金属层。

8. 发明授权

US08754429B2 Optical semiconductor device and method for manufacturing same 有权
标题翻译：光半导体装置及其制造方法
公开(公告)号：US08754429B2
公开(公告)日：2014-06-17
申请号：US13154999
申请日：2011-06-07
申请人： Hiroshi Koizumi , Yasuhide Okada , Susumu Obata , Tomomichi Naka , Kazuhito Higuchi , Kazuo Shimokawa , Yoshiaki Sugizaki , Akihiro Kojima
发明人： Hiroshi Koizumi , Yasuhide Okada , Susumu Obata , Tomomichi Naka , Kazuhito Higuchi , Kazuo Shimokawa , Yoshiaki Sugizaki , Akihiro Kojima
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/0095 , H01L33/50 , H01L33/58 , H01L33/62 , H01L2224/16 , H01L2933/0058
摘要： According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.
摘要翻译：根据一个实施例，光学半导体器件包括发光层，透明层，第一金属柱，第二金属柱和密封层。发光层包括第一和第二主表面，第一和第二电极。第二主表面是与第一主表面相对的表面，并且第一电极和第二电极形成在第二主表面上。透明层设置在第一主表面上。第一金属柱设置在第一电极上。第二金属柱设置在第二电极上。密封层设置在第二主表面上。密封层覆盖发光层的侧表面，并且密封第一和第二金属柱，同时使第一和第二金属柱的端部露出。

9. 发明授权

US08648375B2 Semiconductor light emitting device and light emitting module 失效
标题翻译：半导体发光器件和发光模块
公开(公告)号：US08648375B2
公开(公告)日：2014-02-11
申请号：US13601336
申请日：2012-08-31
申请人： Hideto Furuyama , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
发明人： Hideto Furuyama , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
IPC分类号： H01L33/00
CPC分类号： H01L33/505
摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first and second surfaces, and a light emitting layer; a p-side electrode provided on the second surface; an n-side electrode provided on the second surface; a first insulating film covering the p-side and the n-side electrodes; a p-side wiring section electrically connected to the p-side electrode through the first insulating film; an n-side wiring section electrically connected to the n-side electrode through the first insulating film; and a phosphor layer provided on the first surface. The phosphor layer has an upper surface and an oblique surface, the oblique surface forming an obtuse angle with the upper surface and inclined with respect to the first surface. Thickness of the phosphor layer immediately below the oblique surface is smaller than thickness of the phosphor layer immediately below the upper surface.
摘要翻译：根据一个实施例，半导体发光器件包括：包括第一和第二表面的半导体层和发光层; 设置在第二表面上的p侧电极; 设置在所述第二表面上的n侧电极; 覆盖p侧和n侧电极的第一绝缘膜; 通过第一绝缘膜电连接到p侧电极的p侧布线部分; 通过第一绝缘膜与n侧电极电连接的n侧配线部; 以及设置在第一表面上的荧光体层。荧光体层具有上表面和倾斜表面，倾斜表面与上表面形成钝角并相对于第一表面倾斜。斜面正下方的荧光体层的厚度小于上表面正下方的荧光体层的厚度。

10. 发明申请

US20130127075A1 GAS-LIQUID CONTACTING PLATE, GAS-LIQUID CONTACTING LAMINATED BLOCK BODY, GAS-LIQUID CONTACTING LAMINATED STRUCTURE AND GAS PURIFICATION DEVICE 有权
标题翻译：气液接触板，气液接触层压体，气液接触层压结构和气体净化装置
公开(公告)号：US20130127075A1
公开(公告)日：2013-05-23
申请号：US13813359
申请日：2011-12-08
申请人： Tatsuya Tsujiuchi , Hiromitsu Nagayasu , Hiroshi Tanaka , Takuya Hirata , Keiji Fujikawa , Ryuji Yoshiyama , Yuichiro Sato , Toyoshi Nakagawa , Tsuyoshi Oishi , Motomichi Ochiai , Kei Shioya , Shunji Ichikawa , Akihiro Kojima
发明人： Tatsuya Tsujiuchi , Hiromitsu Nagayasu , Hiroshi Tanaka , Takuya Hirata , Keiji Fujikawa , Ryuji Yoshiyama , Yuichiro Sato , Toyoshi Nakagawa , Tsuyoshi Oishi , Motomichi Ochiai , Kei Shioya , Shunji Ichikawa , Akihiro Kojima
IPC分类号： B01D53/18
CPC分类号： B01D53/18 , B01D3/28 , B01D53/1406 , B01D53/185 , B01D2257/204 , B01D2257/406 , B01D2257/504 , B01F3/04078 , B01J19/32 , B01J2219/32206 , B01J2219/32227 , B01J2219/32241 , B01J2219/32244 , B01J2219/32251 , B01J2219/32258 , B01J2219/32262 , B01J2219/32272 , B01J2219/32483 , B01J2219/3325
摘要： A gas-liquid contacting plate of the present invention in which a treatment liquid flows from an upper side to a lower side direction of a substrate and a part of gas being in contact with the treatment liquid is absorbed into the treatment liquid, includes a downward protruding saw teeth-shaped portion in which a lower end side of the substrate has pitches at predetermined gaps. Further, a pore group for liquid dispersion having a predetermined gap is provided in a plurality of lines, in the substrate. An arrangement thereof is a zigzag arrangement.
摘要翻译：本发明的气液接触板，其中处理液体从基板的上侧向下侧流动，并且与处理液接触的一部分气体被吸收到处理液中，包括向下突出的锯齿形部分，其中衬底的下端侧具有预定间隙的间距。此外，在基板中以多条线设置具有预定间隙的分散液孔组。其布置是锯齿形布置。

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