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1. 发明授权

US09153746B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09153746B2
公开(公告)日：2015-10-06
申请号：US13601568
申请日：2012-08-31
申请人： Akihiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideko Mukaida , Miyoko Shimada , Yoshiaki Sugizaki , Hideto Furuyama
发明人： Akihiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideko Mukaida , Miyoko Shimada , Yoshiaki Sugizaki , Hideto Furuyama
IPC分类号： H01L33/52 , H01L33/00 , H01L33/38 , H01L21/50
CPC分类号： H01L33/486 , H01L33/387 , H01L33/62
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.
摘要翻译：根据实施例，半导体发光器件包括具有发光层的半导体层。该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。

2. 发明授权

US08907357B2 Light emitting module 有权
标题翻译：发光模块
公开(公告)号：US08907357B2
公开(公告)日：2014-12-09
申请号：US13597055
申请日：2012-08-28
申请人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
发明人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
IPC分类号： H01L29/18
CPC分类号： H01L33/42 , H01L25/0753 , H01L27/156 , H01L33/486 , H01L33/507 , H01L33/508 , H01L33/52 , H01L33/62 , H01L2224/16 , H01L2933/0091
摘要： According to one embodiment, a light emitting module includes a mounting substrate, a plurality of light emitting chips, a transparent layer, and a phosphor layer. The transparent layer is provided between the plurality of light emitting chips on the mounting face and on the light emitting chip. The transparent layer has a first transparent body and a scattering agent dispersed at least in the first transparent body between the plurality of light emitting chips. The scattering agent has a different refraction index from a refraction index of the first transparent body. The phosphor layer is provided on the transparent layer. The light emitting chip includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side external terminal, and an n-side external terminal.
摘要翻译：根据一个实施例，发光模块包括安装基板，多个发光芯片，透明层和荧光体层。透明层设置在安装面上的多个发光芯片和发光芯片之间。透明层具有至少分散在多个发光芯片之间的第一透明体中的第一透明体和散射剂。散射剂具有与第一透明体的折射率不同的折射率。荧光体层设置在透明层上。发光芯片包括半导体层，p侧电极，n侧电极，p侧外部端子和n侧外部端子。

3. 发明授权

US08648375B2 Semiconductor light emitting device and light emitting module 失效
标题翻译：半导体发光器件和发光模块
公开(公告)号：US08648375B2
公开(公告)日：2014-02-11
申请号：US13601336
申请日：2012-08-31
申请人： Hideto Furuyama , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
发明人： Hideto Furuyama , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
IPC分类号： H01L33/00
CPC分类号： H01L33/505
摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first and second surfaces, and a light emitting layer; a p-side electrode provided on the second surface; an n-side electrode provided on the second surface; a first insulating film covering the p-side and the n-side electrodes; a p-side wiring section electrically connected to the p-side electrode through the first insulating film; an n-side wiring section electrically connected to the n-side electrode through the first insulating film; and a phosphor layer provided on the first surface. The phosphor layer has an upper surface and an oblique surface, the oblique surface forming an obtuse angle with the upper surface and inclined with respect to the first surface. Thickness of the phosphor layer immediately below the oblique surface is smaller than thickness of the phosphor layer immediately below the upper surface.
摘要翻译：根据一个实施例，半导体发光器件包括：包括第一和第二表面的半导体层和发光层; 设置在第二表面上的p侧电极; 设置在所述第二表面上的n侧电极; 覆盖p侧和n侧电极的第一绝缘膜; 通过第一绝缘膜电连接到p侧电极的p侧布线部分; 通过第一绝缘膜与n侧电极电连接的n侧配线部; 以及设置在第一表面上的荧光体层。荧光体层具有上表面和倾斜表面，倾斜表面与上表面形成钝角并相对于第一表面倾斜。斜面正下方的荧光体层的厚度小于上表面正下方的荧光体层的厚度。

4. 发明申请

US20130285091A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20130285091A1
公开(公告)日：2013-10-31
申请号：US13599892
申请日：2012-08-30
申请人： Yosuke Akimoto , Miyoko Shimada , Akihiro Kojima , Hideyuki Tomizawa , Yoshiaki Sugizaki , Hideto Furuyama
发明人： Yosuke Akimoto , Miyoko Shimada , Akihiro Kojima , Hideyuki Tomizawa , Yoshiaki Sugizaki , Hideto Furuyama
IPC分类号： H01L33/50
CPC分类号： H01L33/44 , H01L33/005 , H01L33/0079 , H01L33/46 , H01L33/505 , H01L2933/0016
摘要： According to an embodiment, a method for manufacturing a semiconductor light emitting device includes steps for forming a fluorescent substance layer on a first face of a semiconductor layer and forming a light shielding film on the side face of the fluorescent substance layer. The fluorescent substance layer includes a resin and fluorescent substances dispersed in the resin, and have a light emitting face on a side opposite to the first face of the semiconductor layer and a side face connecting to the light emitting face with an angle of 90 degree or more between the light emitting face and the side face. The light shielding film shields a light emitted from a light emitting layer included in the semiconductor layer and a light radiated from the fluorescent substances.
摘要翻译：根据实施例，半导体发光器件的制造方法包括在半导体层的第一面上形成荧光体层并在荧光物质层的侧面形成遮光膜的工序。荧光物质层包括分散在树脂中的树脂和荧光物质，并且在与半导体层的第一面相反的一侧具有发光面，以及以90度的角连接到发光面的侧面，更多地在发光面和侧面之间。遮光膜屏蔽从半导体层中包含的发光层发射的光和从荧光物质辐射的光。

5. 发明授权

US08994030B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08994030B2
公开(公告)日：2015-03-31
申请号：US13598504
申请日：2012-08-29
申请人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa , Yoshiaki Sugizaki
发明人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa , Yoshiaki Sugizaki
IPC分类号： H01L33/44
CPC分类号： H01L33/44 , H01L33/486 , H01L33/50
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a phosphor layer, and a transparent film. The semiconductor layer has a first face, a second face opposite to the first face, and a light emitting layer. The p-side electrode is provided on the second face in an area including the light emitting layer. The n-side electrode is provided on the second face in an area not including the light emitting layer. The phosphor layer is provided on the first face. The phosphor layer includes a transparent resin and phosphor dispersed in the transparent resin. The transparent film is provided on the phosphor layer and has an adhesiveness lower than an adhesiveness of the transparent resin.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，p侧电极，n侧电极，荧光体层和透明膜。半导体层具有第一面，与第一面相反的第二面和发光层。 p侧电极设置在包括发光层的区域的第二面上。 n侧电极设置在不包括发光层的区域的第二面上。磷光体层设置在第一面上。荧光体层包括分散在透明树脂中的透明树脂和荧光体。透明膜设置在荧光体层上，粘合性低于透明树脂的粘合性。

6. 发明申请

US20130313581A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE 失效
标题翻译：半导体发光器件和发光模块
公开(公告)号：US20130313581A1
公开(公告)日：2013-11-28
申请号：US13601336
申请日：2012-08-31
申请人： Hideto Furuyama , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
发明人： Hideto Furuyama , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
IPC分类号： H01L33/50 , H01L33/08
CPC分类号： H01L33/505
摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first and second surfaces, and a light emitting layer; a p-side electrode provided on the second surface; an n-side electrode provided on the second surface; a first insulating film covering the p-side and the n-side electrodes; a p-side wiring section electrically connected to the p-side electrode through the first insulating film; an n-side wiring section electrically connected to the n-side electrode through the first insulating film; and a phosphor layer provided on the first surface. The phosphor layer has an upper surface and an oblique surface, the oblique surface forming an obtuse angle with the upper surface and inclined with respect to the first surface. Thickness of the phosphor layer immediately below the oblique surface is smaller than thickness of the phosphor layer immediately below the upper surface.
摘要翻译：根据一个实施例，半导体发光器件包括：包括第一和第二表面的半导体层和发光层; 设置在第二表面上的p侧电极; 设置在所述第二表面上的n侧电极; 覆盖p侧和n侧电极的第一绝缘膜; 通过第一绝缘膜电连接到p侧电极的p侧布线部分; 通过第一绝缘膜与n侧电极电连接的n侧配线部; 以及设置在第一表面上的荧光体层。荧光体层具有上表面和倾斜表面，倾斜表面与上表面形成钝角并相对于第一表面倾斜。斜面正下方的荧光体层的厚度小于上表面正下方的荧光体层的厚度。

7. 发明授权

US08669698B2 Wavelength converter and semiconductor light emitting device 失效
标题翻译：波长转换器和半导体发光器件
公开(公告)号：US08669698B2
公开(公告)日：2014-03-11
申请号：US13598454
申请日：2012-08-29
申请人： Miyoko Shimada , Akhiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideto Furuyama , Yoshiaki Sugizaki
发明人： Miyoko Shimada , Akhiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideto Furuyama , Yoshiaki Sugizaki
IPC分类号： H01L33/00 , H01J1/62
CPC分类号： H01L33/501 , H01L2933/0091
摘要： According to an embodiment, a wavelength converter includes a resin allowing light emitted from a light source to pass through, a plurality of particle-shaped fluorescent substances dispersed in the resin, and fillers dispersed in the resin with a particle diameter smaller than the fluorescent substance. The fluorescent substances absorb the light emitted from the light source and emits fluorescence having a wavelength different from a wavelength of the light emitted from the light source; and a distribution of the fillers has higher density near the fluorescent substance than a density at a middle position between the fluorescent substances adjacent to each other.
摘要翻译：根据实施例，波长转换器包括允许从光源发射的光通过的树脂，分散在树脂中的多个颗粒状荧光物质和分散在粒径小于荧光物质的树脂中的填料。荧光物质吸收从光源发射的光并发射波长不同于从光源发出的光的波长的荧光; 并且填充物的分布在荧光物质附近具有比在彼此相邻的荧光物质之间的中间位置处的密度更高的密度。

8. 发明申请

US20130285536A1 WAVELENGTH CONVERTER AND SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：波长转换器和半导体发光器件
公开(公告)号：US20130285536A1
公开(公告)日：2013-10-31
申请号：US13598454
申请日：2012-08-29
申请人： Miyoko SHIMADA , Akhiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideto Furuyama , Yoshiaki Sugizaki
发明人： Miyoko SHIMADA , Akhiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideto Furuyama , Yoshiaki Sugizaki
IPC分类号： H05B33/12
CPC分类号： H01L33/501 , H01L2933/0091
摘要： According to an embodiment, a wavelength converter includes a resin allowing light emitted from a light source to pass through, a plurality of particle-shaped fluorescent substances dispersed in the resin, and fillers dispersed in the resin with a particle diameter smaller than the fluorescent substance. The fluorescent substances absorb the light emitted from the light source and emits fluorescence having a wavelength different from a wavelength of the light emitted from the light source; and a distribution of the fillers has higher density near the fluorescent substance than a density at a middle position between the fluorescent substances adjacent to each other.
摘要翻译：根据实施例，波长转换器包括允许从光源发射的光通过的树脂，分散在树脂中的多个颗粒状荧光物质和分散在粒径小于荧光物质的树脂中的填料。荧光物质吸收从光源发射的光并发射波长不同于从光源发出的光的波长的荧光; 并且填充物的分布在荧光物质附近具有比在彼此相邻的荧光物质之间的中间位置处的密度更高的密度。

9. 发明申请

US20100237501A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100237501A1
公开(公告)日：2010-09-23
申请号：US12726604
申请日：2010-03-18
申请人： Hideyuki Tomizawa , Noriaki Matsunaga , Tadayoshi Watanabe , Shiro Mishima , Masako Kodera
发明人： Hideyuki Tomizawa , Noriaki Matsunaga , Tadayoshi Watanabe , Shiro Mishima , Masako Kodera
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L21/76826 , H01L21/3105 , H01L21/76832 , H01L21/76849 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes forming an insulating film including silicon, oxygen, carbon and hydrogen above a semiconductor substrate, forming a wiring trench in the insulating film, forming a metal film to be a metal wiring on the insulating film such that the metal film is provided in the wiring trench, forming the metal wiring by removing the metal film outside the wiring trench, performing a hydrophobic treatment to the surface of the insulating film after the forming the metal wiring, and forming a metal cap selectively on an upper surface of the metal wiring by plating after the performing the hydrophobic treatment.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成包括硅，氧，碳和氢的绝缘膜，在绝缘膜中形成布线沟槽，在绝缘膜上形成金属膜作为金属布线，使得金属膜设置在布线沟槽中，通过去除布线沟槽外的金属膜形成金属布线，在形成金属布线之后对绝缘膜的表面进行疏水处理，并在上部选择性地形成金属帽在执行疏水处理之后通过电镀的金属布线的表面。

10. 发明授权

US07608750B2 Nonhuman model animal unresponsive to immunopotentiating synthetic compound 有权
标题翻译：非人类模型动物对免疫增强合成化合物无反应
公开(公告)号：US07608750B2
公开(公告)日：2009-10-27
申请号：US10496501
申请日：2002-11-22
申请人： Shizuo Akira , Hideyuki Tomizawa , Takashi Yamaoka
发明人： Shizuo Akira , Hideyuki Tomizawa , Takashi Yamaoka
IPC分类号： A01K67/00 , A01K67/027 , C12N15/00
CPC分类号： C07K14/705 , A01K67/0276 , A01K2217/075 , A01K2227/105 , A01K2267/0337 , C12N15/8509
摘要： The present invention relates to provide a non-human animal model unresponsive to a synthetic compound wherein a gene function encoding TLR7 that recognizes an immunopotentiating synthetic compound such as imidazoquinoline lacks on is genomic locus. Whole or part of a gene fragment of a gene site including an intracellular region and a transmembrane region of a TLR7 gene obtained from a mouse gene library is replaced by a plasmid including poly A signal and a marker gene to construct a targeting vector. Then, this targeting vector is linearized and transferred into embryonic stem cells. The target embryonic stem cells wherein the TLR7 gene function is deleted are microinjected into a mouse blastocyst to generate a chimeric mouse. Then, this chimeric mouse is crossed with a wild-type mouse to generate a heterozygote mouse. Next, the heterozygote mice are intercrossed to obtain a TLR7 knockout mouse.
摘要翻译：本发明涉及提供对合成化合物无反应的非人动物模型，其中编码识别免疫增强合成化合物如咪唑并喹啉的TLR7的基因功能是基因组座位。包含从小鼠基因文库获得的TLR7基因的细胞内区域和跨膜区的基因位点的整个或部分基因片段被包含polyA信号和标记基因的质粒所取代，以构建靶向载体。然后，将该靶向载体线性化并转移到胚胎干细胞中。将其中缺失TLR7基因功能的靶胚胎干细胞微注射到小鼠胚泡中以产生嵌合小鼠。然后，将该嵌合小鼠与野生型小鼠杂交以产生杂合子小鼠。接下来，杂交小鼠被交叉以获得TLR7敲除小鼠。

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