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    • 2. 发明授权
    • Dry etching method and semiconductor device manufacturing method
    • 干蚀刻法和半导体器件制造方法
    • US06607986B2
    • 2003-08-19
    • US09739905
    • 2000-12-20
    • Shoji SetaHideo Ichinose
    • Shoji SetaHideo Ichinose
    • H01L21302
    • H01L21/76802H01L21/31116H01L21/31138H01L21/7682H01L23/5329H01L2924/0002H01L2924/00
    • In a method for dry-etching a coating by use of reactive gas which is activated, a second insulating layer containing carbon atoms which is formed on a first insulating layer containing carbon atoms is ashed by use of a gas containing carbon atoms and at least one of oxygen atoms, nitrogen atoms and hydrogen atoms. By using the above gas, the second insulating layer containing carbon atoms which is formed on the first insulating layer which is an underlying layer can be efficiently ashed and removed without removing carbon atoms in the side surface of the grooves formed in the first insulating layer and etching the side surface thereof. Thus, the side surface of the groove formed in the first insulating layer will not be modified or deformed.
    • 在通过使用被活化的反应性气体干蚀刻涂层的方法中,通过使用含有碳原子的气体和至少一个含有碳原子的气体将形成在含有碳原子的第一绝缘层上的含有碳原子的第二绝缘层灰化 的氧原子,氮原子和氢原子。 通过使用上述气体,能够有效地除去形成在作为下层的第一绝缘层上的含有碳原子的第二绝缘层,而不除去在第一绝缘层中形成的槽的侧面中的碳原子, 蚀刻其侧表面。 因此,形成在第一绝缘层中的槽的侧表面将不会改变或变形。