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1. 发明授权

US09073284B2 Method of forming pattern and laminate 有权
标题翻译：形成图案和层压板的方法
公开(公告)号：US09073284B2
公开(公告)日：2015-07-07
申请号：US13626415
申请日：2012-09-25
申请人： Atsushi Hieno , Shigeki Hattori , Hiroko Nakamura , Satoshi Mikoshiba , Koji Asakawa , Masahiro Kanno , Yuriko Seino , Tsukasa Azuma
发明人： Atsushi Hieno , Shigeki Hattori , Hiroko Nakamura , Satoshi Mikoshiba , Koji Asakawa , Masahiro Kanno , Yuriko Seino , Tsukasa Azuma
IPC分类号： B32B7/04 , B82Y30/00 , G03F7/004 , G03F7/20 , G03F7/075 , G03F7/11 , G03F7/16 , G03F7/40
CPC分类号： G03F7/40 , B32B7/04 , B32B2307/40 , B82Y30/00 , G03F7/0002 , G03F7/004 , G03F7/0751 , G03F7/0752 , G03F7/11 , G03F7/165 , G03F7/20
摘要： According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.
摘要翻译：根据一个实施方案，提供了形成图案的方法，包括在基材上形成包含热交联性分子的热交联性分子层，在热交联性分子层上形成包含感光性组合物的感光性组合物层，化学结合热交联性分子通过加热，用能量射线选择性地照射感光性组合物层，在感光性组合物层上形成包含嵌段共聚物的嵌段共聚物层，在嵌段共聚物层中形成微相分离结构。

2. 发明申请

US20130078817A1 METHOD OF FORMING FILM, METHOD OF FORMING PATTERN, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：形成膜的方法，形成图案的方法和制造半导体器件的方法
公开(公告)号：US20130078817A1
公开(公告)日：2013-03-28
申请号：US13414754
申请日：2012-03-08
申请人： Tsukasa AZUMA
发明人： Tsukasa AZUMA
IPC分类号： H01L21/302 , B29C33/38
CPC分类号： B29C33/3842 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/67092
摘要： According to an embodiment, a method of forming a film is provided. In the method of forming a film, a reversed pattern which is the reverse of a desired layout pattern is formed on a first substrate. Subsequently, a pattern material of the desired layout pattern is supplied to a second substrate as a reversal material. Thereafter, the reversed pattern is brought into contact with the reversal material such that the reversed pattern faces the reversal material, so that the reversed pattern is filled with the reversal material by a capillary phenomenon.
摘要翻译：根据实施例，提供了一种形成膜的方法。在形成膜的方法中，在第一基板上形成与期望的布局图案相反的反转图案。随后，将所需布局图案的图案材料作为反转材料提供给第二基板。此后，使反转图案与反转材料接触，使得反转图案面向反转材料，使得反转图案通过毛细管现象被反转材料填充。

3. 发明申请

US20120261038A1 LOW ALLOY STEEL FOR GEOTHERMAL POWER GENERATION TURBINE ROTOR, AND LOW ALLOY MATERIAL FOR GEOTHERMAL POWER GENERATION TURBINE ROTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：用于地热发电涡轮转子的低合金钢和用于地热发电涡轮转子的低合金材料及其制造方法
公开(公告)号：US20120261038A1
公开(公告)日：2012-10-18
申请号：US13448770
申请日：2012-04-17
申请人： Satoru OHSAKI , Kazuhiro MIKI , Tsukasa AZUMA , Koji KAJIKAWA , Shigeru SUZUKI , Masayuki YAMADA , Itaru MURAKAMI , Kenichi OKUNO , Liang YAN , Reki TAKAKU , Akihiro TANIGUCHI , Tetsuya YAMANAKA , Makoto TAKAHASHI , Kenichi IMAI , Osamu WATANABE , Joji KANEKO
发明人： Satoru OHSAKI , Kazuhiro MIKI , Tsukasa AZUMA , Koji KAJIKAWA , Shigeru SUZUKI , Masayuki YAMADA , Itaru MURAKAMI , Kenichi OKUNO , Liang YAN , Reki TAKAKU , Akihiro TANIGUCHI , Tetsuya YAMANAKA , Makoto TAKAHASHI , Kenichi IMAI , Osamu WATANABE , Joji KANEKO
IPC分类号： C21D6/00 , C22C38/46
CPC分类号： C22C38/58 , C21D1/25 , C21D1/28 , C21D7/13 , C22C38/44 , C22C38/46
摘要： A low alloy steel ingot contains from 0.15 to 0.30% of C, from 0.03 to 0.2% of Si, from 0.5 to 2.0% of Mn, from 0.1 to 1.3% of Ni, from 1.5 to 3.5% of Cr, from 0.1 to 1.0% of Mo, and more than 0.15 to 0.35% of V, and optionally Ni, with a balance being Fe and unavoidable impurities. Performing quality heat treatment including a quenching step and a tempering step to the low alloy steel ingot to obtain a material, which has a grain size number of from 3 to 7 and is free from pro-eutectoid ferrite in a metallographic structure thereof, and which has a tensile strength of from 760 to 860 MPa and a fracture appearance transition temperature of not higher than 40 ° C.
摘要翻译：低合金钢锭含有0.15〜0.30％的C，0.03〜0.2％的Si，0.5〜2.0％的Mn，0.1〜1.3％的Ni，1.5〜3.5％的Cr，0.1〜1.0 的Mo，以及大于0.15至0.35％的V，以及任选的Ni，余量为Fe和不可避免的杂质。对低合金钢锭进行包括淬火步骤和回火步骤的质量热处理，以获得其金相组织中晶粒数为3至7并且不含共析铁素体的材料，并且其中拉伸强度为760〜860MPa，断裂外观转变温度为40℃以下。

4. 发明申请

US20120214272A1 METHOD OF MANUFACTURING ORGANIC THIN FILM SOLAR CELL 审中-公开
标题翻译：制造有机薄膜太阳能电池的方法
公开(公告)号：US20120214272A1
公开(公告)日：2012-08-23
申请号：US13231453
申请日：2011-09-13
申请人： Tsukasa Azuma , Ikuo Yoneda , Akiko Mimotogi , Ryoichi Inanami , Mitsunaga Saito , Hiroki Iwanaga , Akiko Hirao
发明人： Tsukasa Azuma , Ikuo Yoneda , Akiko Mimotogi , Ryoichi Inanami , Mitsunaga Saito , Hiroki Iwanaga , Akiko Hirao
IPC分类号： H01L31/18
CPC分类号： H01L51/0024 , H01L51/42 , Y02E10/549 , Y02P70/521
摘要： Certain embodiments provide a method of manufacturing an organic thin film solar cell comprising forming, on a first electrode, a first transport layer having an uneven pattern and a photoelectric conversion layer provided on a surface of the uneven pattern, forming a second transport layer on a second electrode, and bringing the uneven pattern having the photoelectric conversion layer is formed thereon into contact with the second transport layer to mold the second transport layer.
摘要翻译：某些实施方案提供一种制造有机薄膜太阳能电池的方法，包括在第一电极上形成具有不均匀图案的第一传输层和设置在不均匀图案的表面上的光电转换层，在第一电极上形成第二传输层第二电极，并且使具有光电转换层的不均匀图案形成在其上与第二传输层接触以模制第二传输层。

5. 发明申请

US20120180912A1 HIGH STRENGTH AND HIGH TOUGHNESS CAST STEEL MATERIAL AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：高强度和高韧性铸钢材料及其制造方法
公开(公告)号：US20120180912A1
公开(公告)日：2012-07-19
申请号：US13498057
申请日：2010-09-24
申请人： Yoshihiro Gotoh , Shinji Tanaka , Tsukasa Azuma
发明人： Yoshihiro Gotoh , Shinji Tanaka , Tsukasa Azuma
IPC分类号： C21D6/00 , C22C38/44
CPC分类号： C22C38/44 , C21D6/00 , C21D6/001 , C22C38/001 , C22C38/008 , C22C38/02 , C22C38/04 , C22C38/46
摘要： A high strength and high toughness cast steel material of the invention has a composition comprising 0.10 to 0.20% by mass of C, 0.10 to 0.50% by mass of Si, 0.40 to 1.20% by mass of Mn, 2.00 to 3.00% by mass of Ni, 0.20 to 0.70% by mass of Cr, and 0.10 to 0.50% by mass of Mo, and further comprising Fe and unavoidable impurities. The high strength and high toughness cast steel material of the invention is produced by subjecting an ingot having the above composition to annealing at 1,000 to 1,100° C., quenching at 850 to 950° C., tempering at 610 to 670° C., and then, if desired, stress-relief annealing at less than 610° C.
摘要翻译：本发明的高强度，高韧性的铸钢材料，具有C：0.10〜0.20质量％，Si：0.10〜0.50质量％，Mn：0.40〜1.20质量％，2.00〜3.00质量％ Ni，0.20〜0.70质量％的Cr和0.10〜0.50质量％的Mo，还含有Fe和不可避免的杂质。本发明的高强度高韧性铸钢材料是通过对上述组成的锭进行1000〜1100℃的退火，在850〜950℃淬火，在610〜670℃回火，然后如果需要，在小于610℃的应力消除退火

6. 发明授权

US06576375B1 Photomask 有权
标题翻译：光掩模
公开(公告)号：US06576375B1
公开(公告)日：2003-06-10
申请号：US09671678
申请日：2000-09-28
申请人： Seiro Miyoshi , Tsukasa Azuma , Hideyuki Kanemitsu
发明人： Seiro Miyoshi , Tsukasa Azuma , Hideyuki Kanemitsu
IPC分类号： G03F900
CPC分类号： G03F1/62 , G03F1/46 , G03F1/48 , G03F1/50 , G03F1/58
摘要： A photomask comprises a transparent substrate, a anti-reflection structure having a chromium oxide film, a chromium film and a chromium oxide film laminated in order on the major surface of the transparent substrate, an LiF film as a anti-reflection film formed on the surface of the first chromium oxide and at the interface between the chromium oxide film and the transparent substrate, and a spin-on-glass film formed on the surface of the chromium oxide film.
摘要翻译：光掩模包括透明基板，在透明基板的主表面上依次层叠有氧化铬膜，铬膜和氧化铬膜的防反射结构，形成在透明基板上的防反射膜的LiF膜第一氧化铬的表面和氧化铬膜与透明基板的界面，以及在氧化铬膜的表面上形成的旋涂玻璃膜。

7. 发明授权

US6096484A Pattern forming method using chemically amplified resist and apparatus for treating chemically amplified resist 失效
标题翻译：使用化学放大抗蚀剂的图案形成方法和用于处理化学放大抗蚀剂的装置
公开(公告)号：US6096484A
公开(公告)日：2000-08-01
申请号：US951112
申请日：1997-10-15
申请人： Tsukasa Azuma
发明人： Tsukasa Azuma
IPC分类号： G03F7/039 , G03F7/26 , G03F7/38 , H01L21/027
CPC分类号： G03F7/265
摘要： A chemically amplified resist is applied to a semiconductor substrate and subjected to post-apply bake, and exposed to light, then, the resist is treated with a vapor of an organic solvent such as PGMEA. By treating with the vapor of the organic solvent, acid diffusion in the resist in the post-exposure bake is suppressed, and a resist pattern having an excellent profile is obtained by development.
摘要翻译：将化学放大抗蚀剂施加到半导体衬底上并进行后施加烘烤并曝光，然后用有机溶剂如PGMEA的蒸气处理抗蚀剂。通过用有机溶剂的蒸气处理，抑制后曝光烘烤中的抗蚀剂中的酸扩散，并且通过显影获得具有优异外形的抗蚀剂图案。

8. 发明授权

US5998100A Fabrication process using a multi-layer antireflective layer 失效
标题翻译：使用多层抗反射层的制造工艺
公开(公告)号：US5998100A
公开(公告)日：1999-12-07
申请号：US924652
申请日：1997-09-05
申请人： Tsukasa Azuma , Tokuhisa Ohiwa , Tetsuo Matsuda , David M. Dobuzinsky , Katsuya Okumura
发明人： Tsukasa Azuma , Tokuhisa Ohiwa , Tetsuo Matsuda , David M. Dobuzinsky , Katsuya Okumura
IPC分类号： G03F7/11 , G03F7/09 , H01L21/027 , G03F7/00
CPC分类号： G03F7/091 , H01L21/0276 , Y10S430/151 , Y10S438/945 , Y10S438/95
摘要： A fabrication process includes a step of providing a substrate to be fabricated. A multi-layer antireflective layer is then formed on the substrate. A patterned resist having a thickness less than 850 nanometers is formed on the multi-layer antireflective layer and the substrate is fabricated using the patterned resist as a mask.
摘要翻译：制造工艺包括提供待制造的基板的步骤。然后在基板上形成多层抗反射层。在多层抗反射层上形成厚度小于850纳米的图案化抗蚀剂，并使用图案化的抗蚀剂作为掩模制造基板。

9. 发明授权

US5879853A Top antireflective coating material and its process for DUV and VUV lithography systems 失效
标题翻译：顶级抗反射涂层材料及其DUV和VUV光刻系统的工艺
公开(公告)号：US5879853A
公开(公告)日：1999-03-09
申请号：US588085
申请日：1996-01-18
申请人： Tsukasa Azuma
发明人： Tsukasa Azuma
IPC分类号： G03F7/09 , G03F7/023 , G03C1/825
CPC分类号： G03F7/091
摘要： This invention relates to a top antireflective layer (TAR) which is preferably transparent to some extent and has high-etch resistance and low reflectivity at the photoresist/TAR interface. The TAR also significantly reduces CD variation in exposed photoresist film. The TAR of the present invention comprises an indanone or glutarimide copolymer, a solvent, and an additive sensitizer having an orthodiazonaphthoquinone structure. The present invention is also related to a process of forming a semiconductor by applying a photoresist layer to the surface of a substrate, forming a top antireflection layer on the photoresist layer, and selectively exposing the substrate to ultraviolet light, wherein the TAR comprises an indanone or glutarimide copolymer, a solvent, and an additive sensitizer with an orthodiazonaphthoquinone structure.
摘要翻译：本发明涉及顶部抗反射层（TAR），其优选在一定程度上是透明的，并且在光致抗蚀剂/ TAR界面处具有高抗蚀刻性和低反射率。 TAR还显着降低了曝光光刻胶膜中的CD变化。本发明的TAR包括具有正辛基萘醌结构的茚酮或戊二酰亚胺共聚物，溶剂和添加剂敏化剂。本发明还涉及通过在基板的表面上施加光致抗蚀剂层形成半导体的方法，在光致抗蚀剂层上形成顶部抗反射层，并将基板选择性地暴露于紫外光下，其中TAR包括茚满酮或戊二酰亚胺共聚物，溶剂和具有正萘醌结构的添加剂敏化剂。

10. 发明授权

US5866303A Resist developing method by magnetic field controlling, resist developing apparatus and method of fabricating semiconductor device 失效
标题翻译：通过磁场控制的抗蚀显影方法，抗蚀剂显影装置和制造半导体器件的方法
公开(公告)号：US5866303A
公开(公告)日：1999-02-02
申请号：US951169
申请日：1997-10-15
申请人： Tsukasa Azuma
发明人： Tsukasa Azuma
IPC分类号： B05C11/08 , B05D1/32 , G03F7/30 , H01L21/027 , G03F7/26
CPC分类号： G03F7/3021 , Y10S204/05
摘要： A semiconductor device is fabricated by the steps of coating an underlayer formed on a semiconductor substrate with chemically amplified resist, exposing the resist to light, bringing the resist into contact with an alkaline developing solution with applying a magnetic field to the alkaline developing solution for conducting development to form a resist pattern, and etching the underlayer on the semiconductor substrate using the resist pattern as a mask.
摘要翻译：通过以下步骤制造半导体器件：通过化学放大抗蚀剂涂覆在半导体衬底上形成的底层，将抗蚀剂曝光，使抗蚀剂与碱性显影溶液接触，同时向碱性显影液施加磁场，以进行导电显影以形成抗蚀剂图案，并且使用抗蚀剂图案作为掩模来蚀刻半导体衬底上的底层。

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