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1. 发明授权

US5426340A Surface acoustic wave device and method of manufacturing the same 失效
标题翻译：表面声波装置及其制造方法
公开(公告)号：US5426340A
公开(公告)日：1995-06-20
申请号：US188536
申请日：1994-01-27
申请人： Kenjiro Higaki , Hideaki Nakahata , Akihiro Hachigo , Shinichi Shikata
发明人： Kenjiro Higaki , Hideaki Nakahata , Akihiro Hachigo , Shinichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/64 , H01L41/08
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device includes a hard layer comprising diamond or a diamond-like carbon film, and a piezoelectric layer formed on the hard layer. It further includes a paired interdigital transducer and grounding electrode, which perform an electro-mechanical conversion, with the piezoelectric layer arranged therebetween. Then, the feature of the present invention is to form the grounding electrode of a conductive oxide. It is preferred that the conductive oxide is formed by doping an impurity into a piezoelectric material of ZnO. Therefore, the adhesion between the piezoelectric layer and the hard layer, and the grounding electrodes is increased, so that the device yield is enhanced, and a high electromechanical coupling coefficient can be achieved in a high frequency range.
摘要翻译：表面声波装置包括由金刚石或类金刚石碳膜构成的硬质层和形成在硬质层上的压电层。它还包括一个成对的叉指式换能器和接地电极，它们进行机电转换，压电层位于它们之间。然后，本发明的特征在于形成导电氧化物的接地电极。优选的是，通过将杂质掺杂到ZnO的压电材料中形成导电氧化物。因此，压电层与硬质层和接地电极之间的粘附性增加，从而提高了器件成品率，并且可以在高频范围内实现高的机电耦合系数。

2. 发明授权

US5501909A Polycrystalline diamond substrate and process for producing the same 失效
标题翻译：多晶金刚石基底及其制造方法
公开(公告)号：US5501909A
公开(公告)日：1996-03-26
申请号：US196609
申请日：1994-02-15
申请人： Kenjiro Higaki , Hideaki Nakahata , Akihiro Hachigo , Shinichi Shikata
发明人： Kenjiro Higaki , Hideaki Nakahata , Akihiro Hachigo , Shinichi Shikata
IPC分类号： C23C16/27 , C23C16/56 , H03H9/02 , C30B25/04
CPC分类号： C23C16/56 , C23C16/27 , H03H9/02582 , Y10T428/24273 , Y10T428/24479 , Y10T428/30
摘要： A diamond substrate having a smooth surface, including a polycrystalline diamond film having a surface with a pit, and an insulating material other than diamond, which occupies the pit.
摘要翻译：具有光滑表面的金刚石基底，包括具有凹坑的表面的多晶金刚石薄膜和占据凹坑的除金刚石之外的绝缘材料。

3. 发明授权

US5497726A Method of manufacturing a surface acoustic wave element 失效
标题翻译：声表面波元件的制造方法
公开(公告)号：US5497726A
公开(公告)日：1996-03-12
申请号：US240826
申请日：1994-05-11
申请人： Shinichi Shikata , Akihiro Hachigo , Hideaki Nakahata , Kenjiro Higaki
发明人： Shinichi Shikata , Akihiro Hachigo , Hideaki Nakahata , Kenjiro Higaki
IPC分类号： H03H3/08 , H03H9/02 , H03H9/25 , C30B23/04 , C30B29/02 , C30B29/04
CPC分类号： H03H9/02582 , H03H3/08
摘要： A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. Since the copper electrodes formed on the diamond layer consist of high-quality single crystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.
摘要翻译：表面声波元件具有金刚石层，形成在金刚石层上的压电薄膜，以及一对电极，用于产生具有特定波长并提取表面声波的表面声波，其中至少一个电极是铜在金刚石层的表面上外延生长的电极。为了制造该声表面波元件，在通过外延生长在基板上形成金刚石层之后，通过外延生长在金刚石层的表面上形成各具有预定形状的铜电极。由于形成在金刚石层上的铜电极由高质量的单晶铜组成，所以可以提高电迁移和应力迁移的电阻。结果，提供了由于铜电极的劣化和故障而导致的不受电特性降低的电缺陷的优异的表面声波元件。

4. 发明授权

US5446329A Surface acoustic wave element 失效
标题翻译：表面声波元件
公开(公告)号：US5446329A
公开(公告)日：1995-08-29
申请号：US118976
申请日：1993-09-09
申请人： Hideaki Nakahata , Akihiro Hachigo , Kenjiro Higaki , Shinichi Shikata
发明人： Hideaki Nakahata , Akihiro Hachigo , Kenjiro Higaki , Shinichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H01L41/08
CPC分类号： H03H9/02582
摘要： A surface acoustic wave element includes a hard layer containing a composition component essentially consisting of at least one of diamond and a diamond-like carbon film, a piezoelectric layer formed on the hard layer, a silicon dioxide (SiO.sub.2) layer formed on the piezoelectric layer, and electrodes combined with the piezoelectric layer to perform electro-mechanical conversion. The surface acoustic wave element has a larger electro-mechanical coupling coefficient and a higher surface acoustic wave propagation velocity than does a conventional surface acoustic wave element having no silicon dioxide layer, thereby obtaining a surface acoustic wave element that can operate in a high-frequency range. In particular, the electro-mechanical coupling coefficient is increased. The SiO.sub.2 layer is an electric insulator and rarely reacts with moisture or acids. The SiO.sub.2 layer protects the piezoelectric layer and the electrodes from effects of the external environment, thereby providing a surface acoustic wave element having good high-frequency characteristics and a high resistance to adverse environments.
摘要翻译：表面声波元件包括含有基本上由金刚石和类金刚石碳膜中的至少一种组成的组成成分的硬质层，形成在硬质层上的压电层，形成在压电层上的二氧化硅（SiO 2）层和与压电层结合的电极进行机电转换。表面声波元件比没有二氧化硅层的常规表面声波元件具有更大的机电耦合系数和更高的表面声波传播速度，从而获得可以在高频下工作的表面声波元件范围。特别地，机电耦合系数增加。 SiO2层是电绝缘体，很少与水分或酸反应。 SiO 2层保护压电层和电极免受外部环境的影响，从而提供具有良好的高频特性和对不利环境的高抗性的表面声波元件。

5. 发明授权

US5343107A Surface acoustic wave element and method of manufacturing the same 失效
标题翻译：表面声波元件及其制造方法
公开(公告)号：US5343107A
公开(公告)日：1994-08-30
申请号：US117226
申请日：1993-09-03
申请人： Shinichi Shikata , Akihiro Hachigo , Hideaki Nakahata , Kenjiro Higaki
发明人： Shinichi Shikata , Akihiro Hachigo , Hideaki Nakahata , Kenjiro Higaki
IPC分类号： H03H3/08 , H03H9/02 , H03H9/25 , H01L41/16
CPC分类号： H03H9/02582 , H03H3/08
摘要： A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. In the surface acoustic wave element having the above structure, since the copper electrodes formed on the diamond layer consist of high-quality singlecrystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.
摘要翻译：表面声波元件具有金刚石层，形成在金刚石层上的压电薄膜，以及一对电极，用于产生具有特定波长并提取表面声波的表面声波，其中至少一个电极是铜在金刚石层的表面上外延生长的电极。为了制造该声表面波元件，在通过外延生长在基板上形成金刚石层之后，通过外延生长在金刚石层的表面上形成各具有预定形状的铜电极。在具有上述结构的表面声波元件中，由于形成在金刚石层上的铜电极由高质量的单晶铜组成，所以可以提高电迁移和应力迁移的电阻。结果，提供了由于铜电极的劣化和故障而导致的不受电特性降低的电缺陷的优异的表面声波元件。

6. 发明授权

US5646468A Diamond-LiTaO.sub.3 surface acoustic wave device 失效
标题翻译： Diamond-LiTaO3弹性表面波装置
公开(公告)号：US5646468A
公开(公告)日：1997-07-08
申请号：US660902
申请日：1996-06-07
申请人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo , Shin-ichi Shikata
发明人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo , Shin-ichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H03H9/00 , H01L41/08
CPC分类号： H03H9/02582
摘要： The present invention directed to a SAW device comprising a diamond layer and an LiTaO.sub.3 layer, which can be operated at the frequency of 3 GHz or higher, with superior durability and less energy loss. The SAW device for 1st mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention comprises: a diamond layer, an interdigital transducer formed onto the diamond layer, and a polycrystalline C-axis-oriented LiTaO.sub.3 layer formed over the interdigital transducer; wherein the SAW device satisfies a relationship of 0.4.ltoreq.kh.sub.1 .ltoreq.1.2, where a parameter kh.sub.1 is defined as kh.sub.1 =2.pi.(t.sub.1 /.lambda.), and t.sub.1 (.mu.m) is the thickness of the LiTaO.sub.3 layer.
摘要翻译：本发明涉及一种包括金刚石层和LiTaO 3层的SAW器件，其可以以3GHz或更高的频率工作，具有优异的耐久性和较少的能量损失。根据本发明的波长λ（μm）的第一模式表面声波的SAW器件包括：金刚石层，形成在金刚石层上的叉指换能器，以及形成在该金刚石层上的多晶C轴取向的LiTaO 3层叉指换能器其中所述SAW器件满足0.4≤kh1≤1.2的关系，其中参数kh1被定义为kh1 =2π（t1 /λ），并且t1（μm）是LiTaO3层的厚度。

7. 发明授权

US5891557A Surface acoustic wave device and diamond base material for the same 失效
公开(公告)号：US5891557A
公开(公告)日：1999-04-06
申请号：US839613
申请日：1997-04-15
申请人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
发明人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/6436 , H03H3/08 , H03H9/02582 , H03H9/6433 , H03H9/6466 , Y10T428/24802 , Y10T428/24926 , Y10T428/24942 , Y10T428/24975 , Y10T428/265 , Y10T428/30
摘要： A diamond base material for surface acoustic wave device, which includes: a low-resistivity base material, and a high-resistivity diamond layer having a thickness of 5-50 .mu.m disposed on the low-resistivity base material.

8. 发明授权

US5891519A Surface acoustic wave device and diamond base material for the same 失效
标题翻译：表面声波装置和金刚石基材相同
公开(公告)号：US5891519A
公开(公告)日：1999-04-06
申请号：US839606
申请日：1997-04-15
申请人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
发明人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/6436 , H03H3/08 , H03H9/02582 , H03H9/6433 , H03H9/6466 , Y10T428/24802 , Y10T428/24926 , Y10T428/24942 , Y10T428/24975 , Y10T428/265 , Y10T428/30
摘要： A diamond base material for surface acoustic wave device, which includes: a low-resistivity base material, and a high-resistivity diamond layer having a thickness of 5-50 .mu.m disposed on the low-resistivity base material.
摘要翻译：一种用于表面声波装置的金刚石基材，其包括：低电阻率基材和设置在低电阻率基材上的厚度为5-50μm的高电阻金刚石层。

9. 发明授权

US5565725A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5565725A
公开(公告)日：1996-10-15
申请号：US429401
申请日：1995-04-26
申请人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo , Shin-ichi Shikata
发明人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo , Shin-ichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H01L41/08
CPC分类号： H03H9/02582
摘要： A SAW device which includes at least, diamond, an LiNbO.sub.3 layer disposed on the diamond, and an IDT provided so as to contact the LiNbO.sub.3 layer; and utilizes SAW of an "n-th" mode (n=0, 1 or 2) having a wavelength of .lambda..sub.n (.mu.m), wherein a parameter of kh.sub.1 =2.pi.(t.sub.1 /.lambda..sub.n) is in a specific range provided that the thickness of the LiNbO.sub.3 layer is denoted by t.sub.1 (.mu.m).
摘要翻译：至少包括金刚石，设置在金刚石上的LiNbO 3层的SAW器件和设置成与LiNbO 3层接触的IDT; 并且使用波长为λn（μm）的“n”模式（n = 0,1或2）的SAW，其中kh1 =2π（t1 /λn）的参数在特定范围内条件是LiNbO 3层的厚度由t1（μm）表示。

10. 发明授权

US5565724A Orientational material, orientational substrate and surface acoustic wave device 失效
标题翻译：定向材料，取向基板和表面声波装置
公开(公告)号：US5565724A
公开(公告)日：1996-10-15
申请号：US363457
申请日：1994-12-22
申请人： Akihiro Hachigo , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Shin-ichi Shikata
发明人： Akihiro Hachigo , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Shin-ichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H01L41/08
CPC分类号： H03H9/02582
摘要： An orientational material including: diamond, and a ZnO film disposed on a surface of (111) orientational diamond provided by the diamond. Such an orientational material may suitably be used as a component for fabricating a surface acoustic wave device utilizing diamond.
摘要翻译：取向材料包括金刚石和设置在由钻石提供的（111）取向金刚石的表面上的ZnO膜。这种定向材料可以适当地用作制造使用金刚石的声表面波器件的组件。

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