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1. 发明授权

US07499146B2 Lithographic apparatus and device manufacturing method, an integrated circuit, a flat panel display, and a method of compensating for cupping 有权
标题翻译：平版印刷设备和器件制造方法，集成电路，平板显示器以及补罐方法
公开(公告)号：US07499146B2
公开(公告)日：2009-03-03
申请号：US11252877
申请日：2005-10-19
申请人： Kars Zeger Troost , Johannes Jacobus Matheus Baselmans , Arno Jan Bleeker , Louis Markoya , Neal Callan , Nicholas K. Eib
发明人： Kars Zeger Troost , Johannes Jacobus Matheus Baselmans , Arno Jan Bleeker , Louis Markoya , Neal Callan , Nicholas K. Eib
IPC分类号： G03B27/54 , G03B27/42
CPC分类号： G03F7/70291 , G03F7/70275 , G03F7/70358
摘要： The tilt and position of individually controllable element are simultaneously adjusted to allow a greater range of contrasts to be achieved. This can also be used to compensate for cupping of individually controllable elements. Simultaneous adjustment of both the position and tilt of the individually controllable elements can be achieved by two electrodes operable over a range of values.
摘要翻译：同时调节独立可控元件的倾斜和位置，以实现更大范围的对比度。这也可以用于补偿单独可控元件的拔罐。可以通过在一定范围的值范围内可操作的两个电极来实现对独立可控元件的位置和倾斜的同时调节。

2. 发明授权

US07738078B2 Optimized mirror design for optical direct write 失效
标题翻译：优化的镜面设计，用于光学直写
公开(公告)号：US07738078B2
公开(公告)日：2010-06-15
申请号：US11769486
申请日：2007-06-27
申请人： Nicholas K. Eib , Ebo Croffie , Neal Callan
发明人： Nicholas K. Eib , Ebo Croffie , Neal Callan
IPC分类号： G03B27/72 , G03B27/54
CPC分类号： G03F7/70291 , G02B26/001 , G02B26/0833 , G03F7/70283
摘要： The present invention provides an optimized direct write lithography system using optical mirrors. That is, a maskless lithography system is provided. The maskless direct-write lithography system provided uses an array of mirrors configured to operate in a tilting mode, a piston-displacement mode, or both in combination. The controlled mirror array is used as a substitute for the traditional chrome on glass masks. In order to avoid constraining the system to forming edges of patterns aligned with the array of mirrors, gray-scale techniques are used for subpixel feature placement. The direct-writing of a pattern portion may rely on a single mirror mode or a combination of modes.
摘要翻译：本发明提供使用光学镜的优化的直写光刻系统。也就是说，提供无掩模光刻系统。所提供的无掩模直写光刻系统使用配置成以倾斜模式，活塞位移模式或两者组合地操作的反射镜阵列。受控反射镜阵列用作传统镀铬玻璃面罩的替代品。为了避免将系统约束以形成与反射镜阵列对准的图案的边缘，使用灰度技术用于子像素特征放置。图案部分的直接写入可以依赖于单一镜像模式或模式的组合。

3. 发明授权

US07270942B2 Optimized mirror design for optical direct write 有权
标题翻译：优化的镜面设计，用于光学直写
公开(公告)号：US07270942B2
公开(公告)日：2007-09-18
申请号：US10825342
申请日：2004-04-14
申请人： Nicholas K. Eib , Ebo Croffie , Neal Callan
发明人： Nicholas K. Eib , Ebo Croffie , Neal Callan
IPC分类号： G03B27/54
CPC分类号： G03F7/70291 , G02B26/001 , G02B26/0833 , G03F7/70283
摘要： The present invention provides an optimized direct write lithography system using optical mirrors. That is, a maskless lithography system is provided. The maskless direct-write lithography system provided uses an array of mirrors configured to operate in a tilting mode, a piston-displacement mode, or both in combination. The controlled mirror array is used as a substitute for the traditional chrome on glass masks. In order to avoid constraining the system to forming edges of patterns aligned with the array of mirrors, gray-scale techniques are used for subpixel feature placement. The direct-writing of a pattern portion may rely on a single mirror mode or a combination of modes.
摘要翻译：本发明提供使用光学镜的优化的直写光刻系统。也就是说，提供无掩模光刻系统。所提供的无掩模直写光刻系统使用配置成以倾斜模式，活塞位移模式或两者组合地操作的反射镜阵列。受控反射镜阵列用作传统镀铬玻璃面罩的替代品。为了避免将系统约束以形成与反射镜阵列对准的图案的边缘，使用灰度技术用于子像素特征放置。图案部分的直接写入可以依赖于单一镜像模式或模式的组合。

4. 发明申请

US20060203220A1 Lithographic apparatus and device manufacturing method, an integrated circuit, a flat panel display, and a method of compensating for cupping 有权
公开(公告)号：US20060203220A1
公开(公告)日：2006-09-14
申请号：US11252877
申请日：2005-10-19
申请人： Kars Troost , Johannes Baselmans , Arno Bleeker , Louis Markoya , Neal Callan , Nicholas Eib
发明人： Kars Troost , Johannes Baselmans , Arno Bleeker , Louis Markoya , Neal Callan , Nicholas Eib
IPC分类号： G03B27/54
CPC分类号： G03F7/70291 , G03F7/70275 , G03F7/70358
摘要： The tilt and position of individually controllable element are simultaneously adjusted to allow a greater range of contrasts to be achieved. This can also be used to compensate for cupping of individually controllable elements. Simultaneous adjustment of both the position and tilt of the individually controllable elements can be achieved by two electrodes operable over a range of values.

5. 发明申请

US20050088640A1 Optimized mirror design for optical direct write 有权
标题翻译：优化的镜面设计，用于光学直写
公开(公告)号：US20050088640A1
公开(公告)日：2005-04-28
申请号：US10825342
申请日：2004-04-14
申请人： Nicholas Eib , Ebo Croffie , Neal Callan
发明人： Nicholas Eib , Ebo Croffie , Neal Callan
IPC分类号： G02B26/00 , G02B26/08 , G03F7/20 , G03B27/00
CPC分类号： G03F7/70291 , G02B26/001 , G02B26/0833 , G03F7/70283
摘要： The present invention provides an optimized direct write lithography system using optical mirrors. That is, a maskless lithography system is provided. The maskless direct-write lithography system provided uses an array of mirrors configured to operate in a tilting mode, a piston-displacement mode, or both in combination. The controlled mirror array is used as a substitute for the traditional chrome on glass masks. In order to avoid constraining the system to forming edges of patterns aligned with the array of mirrors, gray-scale techniques are used for subpixel feature placement. The direct-writing of a pattern portion may rely on a single mirror mode or a combination of modes.
摘要翻译：本发明提供使用光学镜的优化的直写光刻系统。也就是说，提供无掩模光刻系统。所提供的无掩模直写光刻系统使用配置成以倾斜模式，活塞位移模式或两者组合地操作的反射镜阵列。受控反射镜阵列用作传统镀铬玻璃面罩的替代品。为了避免将系统约束以形成与反射镜阵列对准的图案的边缘，使用灰度技术用于子像素特征放置。图案部分的直接写入可以依赖于单一镜像模式或模式的组合。

6. 发明授权

US07313508B2 Process window compliant corrections of design layout 有权
标题翻译：过程窗口符合设计布局校正
公开(公告)号：US07313508B2
公开(公告)日：2007-12-25
申请号：US10330929
申请日：2002-12-27
申请人： Ebo Croffie , Colin Yates , Nicholas Eib , Christopher Neville , Mario Garza , Neal Callan
发明人： Ebo Croffie , Colin Yates , Nicholas Eib , Christopher Neville , Mario Garza , Neal Callan
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： The invention provides a method of performing process window compliant corrections of a design layout. The invention includes an operator performing the following steps: (1) simulating Develop Inspect Critical Dimension (DI CD) at best exposure conditions using the provided original layout pattern; (2) simulating DI CD at predefined boundary exposure conditions using the provided original layout pattern; (3) if the DI CD from step (1) meets the target DI CD definition, and the DI CD from step (2) meets process window specifications, convergence takes place; and (4) modifying the layout pattern and repeating steps (2) through (3) until DI CD from step (2) reaches the specification limit if any portion of step (3) is not achieved.
摘要翻译：本发明提供了一种执行设计布局的兼容过程窗口校正的方法。本发明包括一个操作员执行以下步骤：（1）使用提供的原始布局模式在最佳曝光条件下模拟发现检查临界尺寸（DI CD）; （2）使用提供的原始布局图案在预定边界曝光条件下模拟DI CD; （3）如果来自步骤（1）的DI CD符合目标DI CD定义，并且步骤（2）的DI CD符合过程窗口规范，则会发生收敛; （4）如果没有实现步骤（3）的任何部分，则修改布局图案并重复步骤（2）至（3），直到来自步骤（2）的DI CD达到规格极限。

7. 发明授权

US07149340B2 Mask defect analysis for both horizontal and vertical processing effects 有权
标题翻译：水平和垂直处理效果的掩模缺陷分析
公开(公告)号：US07149340B2
公开(公告)日：2006-12-12
申请号：US10251082
申请日：2002-09-20
申请人： Paul Filseth , Neal Callan , Kunal Taravade , Mario Garza
发明人： Paul Filseth , Neal Callan , Kunal Taravade , Mario Garza
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G06K9/48 , G06K9/6206 , G06T7/001 , G06T2207/30148
摘要： A method and system for detecting defects in a physical mask used for fabricating a semiconductor device having multiple layers is disclosed, where each layer has a corresponding mask. The method and system include receiving a digital image of the mask, and automatically detecting edges of the mask in the image using pattern recognition. The detected edges, which are stored in a standard format, are imported along with processing parameters into a process simulator that generates an estimated aerial image of the silicon layout that would be produced by a scanner using the mask and the parameters. The estimated aerial image is then compared to an intended aerial image of the same layer, and any differences found that are greater than predefined tolerances are determined to horizontal defects. In addition, effects that the horizontal defects may have on adjacent layers are analyzed to discover vertical defects.
摘要翻译：公开了一种用于检测用于制造具有多层的半导体器件的物理掩模中的缺陷的方法和系统，其中每层具有相应的掩模。该方法和系统包括接收掩模的数字图像，并使用模式识别自动检测图像中的掩模的边缘。以标准格式存储的检测到的边缘与处理参数一起导入到生成由扫描仪使用掩模和参数产生的硅布局的估计空间图像的过程模拟器中。然后将估计的空中图像与同一层的预期空间图像进行比较，并且发现大于预定公差的任何差异被确定为水平缺陷。此外，分析水平缺陷可能对相邻层产生的影响以发现垂直缺陷。

8. 发明申请

US20050151949A1 Process and apparatus for applying apodization to maskless optical direct write lithography processes 审中-公开
标题翻译：用于将无切削光学直写式光刻工艺进行变迹的工艺和设备
公开(公告)号：US20050151949A1
公开(公告)日：2005-07-14
申请号：US10988087
申请日：2004-11-12
申请人： Nicholas Eib , Ebo Croffie , Christopher Neville , Neal Callan
发明人： Nicholas Eib , Ebo Croffie , Christopher Neville , Neal Callan
IPC分类号： G03F7/20 , G03B27/42 , G03B27/54
CPC分类号： G03F7/7025 , G03F7/70283 , G03F7/70291 , G03F7/70325
摘要： The present invention provides methods and apparatus for accomplishing a phase shift lithography process using a blocker to block zero order light to improve image quality for phase shift lithography systems and methodologies. A maskless lithography system is provided. The lithography system provided uses a phase shift pattern generator which projects a phase shift image pattern along an optical path onto a photoimageable layer of a substrate in order to facilitate pattern transfer. A blocking element is interposed in the optical path to block zero order light in the image pattern, thereby improving image quality.
摘要翻译：本发明提供了用于完成相移光刻工艺的方法和装置，该方法和装置使用阻滞剂来阻挡零级光以改善相移光刻系统和方法的图像质量。提供无掩模光刻系统。提供的光刻系统使用相移图案发生器，其将沿着光路的相移图像图案投影到基板的可光成像层上，以便于图案转印。阻挡元件插入在光路中以阻挡图像图案中的零级光，从而提高图像质量。

9. 发明授权

US08015540B2 Method and system for reducing inter-layer capacitance in integrated circuits 有权
标题翻译：集成电路中降低层间电容的方法和系统
公开(公告)号：US08015540B2
公开(公告)日：2011-09-06
申请号：US12156281
申请日：2008-05-30
申请人： Kunal N. Taravade , Neal Callan , Paul G. Filseth
发明人： Kunal N. Taravade , Neal Callan , Paul G. Filseth
IPC分类号： G06F17/50
CPC分类号： H01L21/7684 , H01L23/522 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： The present invention is directed to a method and system of intelligent dummy filling placement to reduce inter-layer capacitance caused by overlaps of dummy filling area on successive layers. The method and system treats each consecutive pair of layers together so as to minimize dummy filling overlaps between each layer. In particular, dummy fill features on each layer may be placed in a checkerboard pattern to avoid overlaps. As such, the present invention may eliminate large overlap area of the dummy patterns on consecutive layers by utilizing intelligent dummy filling placement.
摘要翻译：本发明涉及一种智能虚拟填充布局的方法和系统，以减少由连续层上的虚拟填充区域的重叠引起的层间电容。该方法和系统将每个连续的层对对齐在一起，以使每层之间的虚拟填充重叠最小化。特别地，每个层上的虚拟填充特征可以被放置在棋盘图案中以避免重叠。因此，本发明可以通过利用智能虚拟填充放置来消除连续层上的虚拟图案的大的重叠区域。

10. 发明申请

US20050275814A1 Maskless vortex phase shift optical direct write lithography 有权
标题翻译：无掩模旋转相移光学直写光刻
公开(公告)号：US20050275814A1
公开(公告)日：2005-12-15
申请号：US11011896
申请日：2004-12-14
申请人： Nicholas Eib , Ebo Croffie , Neal Callan
发明人： Nicholas Eib , Ebo Croffie , Neal Callan
IPC分类号： G03B27/00 , G03F7/20
CPC分类号： G03B27/70 , G03F7/70283 , G03F7/70291
摘要： The present invention provides methods and apparatus for accomplishing a optical direct write phase shift lithography. A lithography system and method are provided wherein a mirror array is configured to generate vortex phase shift optical patterns that are directed onto a photosensitive layer of a substrate. The lithography methods and systems facilitate pattern transfer using such vortex phase shift exposure patterns.
摘要翻译：本发明提供了用于完成光学直写写相移光刻的方法和装置。提供了一种光刻系统和方法，其中反射镜阵列被配置为产生被引导到基底的感光层上的涡流相移光学图案。光刻方法和系统便于使用这种涡流相移曝光图案的图案转印。

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