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1. 发明授权

US07738078B2 Optimized mirror design for optical direct write 失效
标题翻译：优化的镜面设计，用于光学直写
公开(公告)号：US07738078B2
公开(公告)日：2010-06-15
申请号：US11769486
申请日：2007-06-27
申请人： Nicholas K. Eib , Ebo Croffie , Neal Callan
发明人： Nicholas K. Eib , Ebo Croffie , Neal Callan
IPC分类号： G03B27/72 , G03B27/54
CPC分类号： G03F7/70291 , G02B26/001 , G02B26/0833 , G03F7/70283
摘要： The present invention provides an optimized direct write lithography system using optical mirrors. That is, a maskless lithography system is provided. The maskless direct-write lithography system provided uses an array of mirrors configured to operate in a tilting mode, a piston-displacement mode, or both in combination. The controlled mirror array is used as a substitute for the traditional chrome on glass masks. In order to avoid constraining the system to forming edges of patterns aligned with the array of mirrors, gray-scale techniques are used for subpixel feature placement. The direct-writing of a pattern portion may rely on a single mirror mode or a combination of modes.
摘要翻译：本发明提供使用光学镜的优化的直写光刻系统。也就是说，提供无掩模光刻系统。所提供的无掩模直写光刻系统使用配置成以倾斜模式，活塞位移模式或两者组合地操作的反射镜阵列。受控反射镜阵列用作传统镀铬玻璃面罩的替代品。为了避免将系统约束以形成与反射镜阵列对准的图案的边缘，使用灰度技术用于子像素特征放置。图案部分的直接写入可以依赖于单一镜像模式或模式的组合。

2. 发明授权

US07270942B2 Optimized mirror design for optical direct write 有权
标题翻译：优化的镜面设计，用于光学直写
公开(公告)号：US07270942B2
公开(公告)日：2007-09-18
申请号：US10825342
申请日：2004-04-14
申请人： Nicholas K. Eib , Ebo Croffie , Neal Callan
发明人： Nicholas K. Eib , Ebo Croffie , Neal Callan
IPC分类号： G03B27/54
CPC分类号： G03F7/70291 , G02B26/001 , G02B26/0833 , G03F7/70283
摘要： The present invention provides an optimized direct write lithography system using optical mirrors. That is, a maskless lithography system is provided. The maskless direct-write lithography system provided uses an array of mirrors configured to operate in a tilting mode, a piston-displacement mode, or both in combination. The controlled mirror array is used as a substitute for the traditional chrome on glass masks. In order to avoid constraining the system to forming edges of patterns aligned with the array of mirrors, gray-scale techniques are used for subpixel feature placement. The direct-writing of a pattern portion may rely on a single mirror mode or a combination of modes.
摘要翻译：本发明提供使用光学镜的优化的直写光刻系统。也就是说，提供无掩模光刻系统。所提供的无掩模直写光刻系统使用配置成以倾斜模式，活塞位移模式或两者组合地操作的反射镜阵列。受控反射镜阵列用作传统镀铬玻璃面罩的替代品。为了避免将系统约束以形成与反射镜阵列对准的图案的边缘，使用灰度技术用于子像素特征放置。图案部分的直接写入可以依赖于单一镜像模式或模式的组合。

3. 发明申请

US20050088640A1 Optimized mirror design for optical direct write 有权
标题翻译：优化的镜面设计，用于光学直写
公开(公告)号：US20050088640A1
公开(公告)日：2005-04-28
申请号：US10825342
申请日：2004-04-14
申请人： Nicholas Eib , Ebo Croffie , Neal Callan
发明人： Nicholas Eib , Ebo Croffie , Neal Callan
IPC分类号： G02B26/00 , G02B26/08 , G03F7/20 , G03B27/00
CPC分类号： G03F7/70291 , G02B26/001 , G02B26/0833 , G03F7/70283
摘要： The present invention provides an optimized direct write lithography system using optical mirrors. That is, a maskless lithography system is provided. The maskless direct-write lithography system provided uses an array of mirrors configured to operate in a tilting mode, a piston-displacement mode, or both in combination. The controlled mirror array is used as a substitute for the traditional chrome on glass masks. In order to avoid constraining the system to forming edges of patterns aligned with the array of mirrors, gray-scale techniques are used for subpixel feature placement. The direct-writing of a pattern portion may rely on a single mirror mode or a combination of modes.
摘要翻译：本发明提供使用光学镜的优化的直写光刻系统。也就是说，提供无掩模光刻系统。所提供的无掩模直写光刻系统使用配置成以倾斜模式，活塞位移模式或两者组合地操作的反射镜阵列。受控反射镜阵列用作传统镀铬玻璃面罩的替代品。为了避免将系统约束以形成与反射镜阵列对准的图案的边缘，使用灰度技术用于子像素特征放置。图案部分的直接写入可以依赖于单一镜像模式或模式的组合。

4. 发明申请

US20070247604A1 OPTIMIZED MIRROR DESIGN FOR OPTICAL DIRECT WRITE 失效
标题翻译：优化的镜像设计用于光学直接写入
公开(公告)号：US20070247604A1
公开(公告)日：2007-10-25
申请号：US11769486
申请日：2007-06-27
申请人： Nicholas Eib , Ebo Croffie , Neal Callan
发明人： Nicholas Eib , Ebo Croffie , Neal Callan
IPC分类号： G03B27/42
CPC分类号： G03F7/70291 , G02B26/001 , G02B26/0833 , G03F7/70283
摘要： The present invention provides an optimized direct write lithography system using optical mirrors. That is, a maskless lithography system is provided. The maskless direct-write lithography system provided uses an array of mirrors configured to operate in a tilting mode, a piston-displacement mode, or both in combination. The controlled mirror array is used as a substitute for the traditional chrome on glass masks. In order to avoid constraining the system to forming edges of patterns aligned with the array of mirrors, gray-scale techniques are used for subpixel feature placement. The direct-writing of a pattern portion may rely on a single mirror mode or a combination of modes.
摘要翻译：本发明提供使用光学镜的优化的直写光刻系统。也就是说，提供无掩模光刻系统。所提供的无掩模直写光刻系统使用配置成以倾斜模式，活塞位移模式或两者组合地操作的反射镜阵列。受控反射镜阵列用作传统镀铬玻璃面罩的替代品。为了避免将系统约束以形成与反射镜阵列对准的图案的边缘，使用灰度技术用于子像素特征放置。图案部分的直接写入可以依赖于单一镜像模式或模式的组合。

5. 发明申请

US20050019673A1 Attenuated film with etched quartz phase shift mask 审中-公开
标题翻译：具有蚀刻石英相移掩模的衰减薄膜
公开(公告)号：US20050019673A1
公开(公告)日：2005-01-27
申请号：US10624662
申请日：2003-07-22
申请人： Kunal Taravade , Ebo Croffie , Neal Callan
发明人： Kunal Taravade , Ebo Croffie , Neal Callan
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32
摘要： A phase shift mask which includes an etched quartz region that provides a 180 degree phase shift, and an attenuated film which provides a 0 (or 360) degree phase shift. The phase shift mask provides performance comparable to CPL, while at the same time, avoiding the problems and manufacturability issues associated with EDA. The phase shift mask has better contrast than CPL, and a process window that is comparable to both CPL and alternating phase shift masks. The phase shift mask that does not require a second critical write, as is the case with CPL, does not need a second mask to eliminate unwanted patterns resulting from phase edges, and does not need a complicated EDA solution (like CPL). Finally, the phase shift mask is simple to manufacture, requiring only a single write step if employed with the back-side exposure technique which is well known in the mask-making industry.
摘要翻译：包括提供180度相移的蚀刻石英区域和提供0（或360度）相移的衰减膜的相移掩模。相移掩码提供与CPL相当的性能，同时避免与EDA相关的问题和可制造性问题。相移掩模具有比CPL更好的对比度，以及与CPL和交替相移掩模相当的处理窗口。与CPL的情况一样，不需要第二次临界写入的相移掩模不需要第二个掩模来消除由相位边缘产生的不必要的图形，并且不需要复杂的EDA解决方案（如CPL）。最后，相位掩模制造简单，如果采用掩模制造行业所熟知的背面曝光技术，则仅需要一个写入步骤。

6. 发明授权

US07313508B2 Process window compliant corrections of design layout 有权
标题翻译：过程窗口符合设计布局校正
公开(公告)号：US07313508B2
公开(公告)日：2007-12-25
申请号：US10330929
申请日：2002-12-27
申请人： Ebo Croffie , Colin Yates , Nicholas Eib , Christopher Neville , Mario Garza , Neal Callan
发明人： Ebo Croffie , Colin Yates , Nicholas Eib , Christopher Neville , Mario Garza , Neal Callan
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： The invention provides a method of performing process window compliant corrections of a design layout. The invention includes an operator performing the following steps: (1) simulating Develop Inspect Critical Dimension (DI CD) at best exposure conditions using the provided original layout pattern; (2) simulating DI CD at predefined boundary exposure conditions using the provided original layout pattern; (3) if the DI CD from step (1) meets the target DI CD definition, and the DI CD from step (2) meets process window specifications, convergence takes place; and (4) modifying the layout pattern and repeating steps (2) through (3) until DI CD from step (2) reaches the specification limit if any portion of step (3) is not achieved.
摘要翻译：本发明提供了一种执行设计布局的兼容过程窗口校正的方法。本发明包括一个操作员执行以下步骤：（1）使用提供的原始布局模式在最佳曝光条件下模拟发现检查临界尺寸（DI CD）; （2）使用提供的原始布局图案在预定边界曝光条件下模拟DI CD; （3）如果来自步骤（1）的DI CD符合目标DI CD定义，并且步骤（2）的DI CD符合过程窗口规范，则会发生收敛; （4）如果没有实现步骤（3）的任何部分，则修改布局图案并重复步骤（2）至（3），直到来自步骤（2）的DI CD达到规格极限。

7. 发明申请

US20050151949A1 Process and apparatus for applying apodization to maskless optical direct write lithography processes 审中-公开
标题翻译：用于将无切削光学直写式光刻工艺进行变迹的工艺和设备
公开(公告)号：US20050151949A1
公开(公告)日：2005-07-14
申请号：US10988087
申请日：2004-11-12
申请人： Nicholas Eib , Ebo Croffie , Christopher Neville , Neal Callan
发明人： Nicholas Eib , Ebo Croffie , Christopher Neville , Neal Callan
IPC分类号： G03F7/20 , G03B27/42 , G03B27/54
CPC分类号： G03F7/7025 , G03F7/70283 , G03F7/70291 , G03F7/70325
摘要： The present invention provides methods and apparatus for accomplishing a phase shift lithography process using a blocker to block zero order light to improve image quality for phase shift lithography systems and methodologies. A maskless lithography system is provided. The lithography system provided uses a phase shift pattern generator which projects a phase shift image pattern along an optical path onto a photoimageable layer of a substrate in order to facilitate pattern transfer. A blocking element is interposed in the optical path to block zero order light in the image pattern, thereby improving image quality.
摘要翻译：本发明提供了用于完成相移光刻工艺的方法和装置，该方法和装置使用阻滞剂来阻挡零级光以改善相移光刻系统和方法的图像质量。提供无掩模光刻系统。提供的光刻系统使用相移图案发生器，其将沿着光路的相移图像图案投影到基板的可光成像层上，以便于图案转印。阻挡元件插入在光路中以阻挡图像图案中的零级光，从而提高图像质量。

8. 发明申请

US20050275814A1 Maskless vortex phase shift optical direct write lithography 有权
标题翻译：无掩模旋转相移光学直写光刻
公开(公告)号：US20050275814A1
公开(公告)日：2005-12-15
申请号：US11011896
申请日：2004-12-14
申请人： Nicholas Eib , Ebo Croffie , Neal Callan
发明人： Nicholas Eib , Ebo Croffie , Neal Callan
IPC分类号： G03B27/00 , G03F7/20
CPC分类号： G03B27/70 , G03F7/70283 , G03F7/70291
摘要： The present invention provides methods and apparatus for accomplishing a optical direct write phase shift lithography. A lithography system and method are provided wherein a mirror array is configured to generate vortex phase shift optical patterns that are directed onto a photosensitive layer of a substrate. The lithography methods and systems facilitate pattern transfer using such vortex phase shift exposure patterns.
摘要翻译：本发明提供了用于完成光学直写写相移光刻的方法和装置。提供了一种光刻系统和方法，其中反射镜阵列被配置为产生被引导到基底的感光层上的涡流相移光学图案。光刻方法和系统便于使用这种涡流相移曝光图案的图案转印。

9. 发明申请

US20050237508A1 Process and apparatus for achieving single exposure pattern transfer using maskless optical direct write lithography 有权
标题翻译：使用无掩模光学直接写入光刻实现单次曝光图案转印的工艺和设备
公开(公告)号：US20050237508A1
公开(公告)日：2005-10-27
申请号：US11012003
申请日：2004-12-14
申请人： Nicholas Eib , Ebo Croffie , Neal Callan
发明人： Nicholas Eib , Ebo Croffie , Neal Callan
IPC分类号： G03B27/54 , G03F7/20
CPC分类号： G03F7/70291 , G03F7/70125 , G03F7/70283
摘要： The present invention provides methods and apparatus for accomplishing a phase shift lithography process using a off axis light to reduce the effect of zero order light to improve the process window for maskless phase shift lithography systems and methodologies. A lithography system is provided. The lithography system provided uses off axis light beams projected onto a mirror array configured to generate a phase shift optical image pattern. This pattern is projected onto a photoimageable layer formed on the target substrate to facilitate pattern transfer.
摘要翻译：本发明提供了使用偏轴光完成相移光刻工艺以减少零级光的影响以改善无掩模相移光刻系统和方法的工艺窗口的方法和装置。提供光刻系统。提供的光刻系统使用投影到配置成产生相移光学图像图案的反射镜阵列上的离轴光束。将该图案投影到形成在目标基板上的可光成像层以便于图案转印。

10. 发明申请

US20050204328A1 Method for verifying ret latent image sensitivity to mask manufacturing errors 失效
标题翻译：验证潜像图像敏感度以掩盖制造误差的方法
公开(公告)号：US20050204328A1
公开(公告)日：2005-09-15
申请号：US10800219
申请日：2004-03-12
申请人： Nadya Strelkova , Ebo Croffie , John Jensen
发明人： Nadya Strelkova , Ebo Croffie , John Jensen
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method for verifying reticle enhancement technique latent image sensitivity to mask manufacturing errors. The method includes the steps of revising a polygon based on mask CD distributions to provide a virtual mask, imaging the virtual mask to obtain response function statistical parameters, and comparing the statistical parameters to design rule requirements. Preferably, the method includes the steps of simulating an aerial and/or latent image of the virtual mask, calculating response functions based on the mask image simulation, collecting measurements and calculating statistical parameters based on the response functions, and comparing the statistical parameters with design rule requirements (i.e., for DI yield percentage for required mask manufacturing specification). The virtual mask is obtained by using mask CD distribution to induce statistical variations to layouts which have passed through the conventional OPC procedure.
摘要翻译：一种验证掩模版增强技术潜像灵敏度以掩盖制造误差的方法。该方法包括以下步骤：基于掩模CD分布修改多边形以提供虚拟掩码，对虚拟掩码进行成像以获得响应函数统计参数，以及将统计参数与设计规则要求进行比较。优选地，该方法包括以下步骤：模拟虚拟掩模的天线和/或潜像，基于掩模图像模拟计算响应函数，基于响应函数收集测量和计算统计参数，并将统计参数与设计进行比较规则要求（即，对于所需掩模制造规范的DI产率百分比）。通过使用掩模CD分布来获得虚拟掩模，以引起已经通过常规OPC过程的布局的统计变化。

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