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1. 发明授权

US07244344B2 Physical vapor deposition plasma reactor with VHF source power applied through the workpiece 有权
标题翻译：具有通过工件施加VHF源功率的物理气相沉积等离子体反应器
公开(公告)号：US07244344B2
公开(公告)日：2007-07-17
申请号：US11140514
申请日：2005-05-25
申请人： Karl M. Brown , John Pipitone , Vineet Mehta , Ralf Hofmann , Wei W. Wang , Semyon Sherstinsky
发明人： Karl M. Brown , John Pipitone , Vineet Mehta , Ralf Hofmann , Wei W. Wang , Semyon Sherstinsky
IPC分类号： C23C14/35
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet, a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency in a range between about 60 MHz and 81 MHz, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.
摘要翻译：物理气相沉积等离子体反应器包括真空室，其包括侧壁，天花板和靠近室底部的晶片支撑基座，以及耦合到该室的真空泵，耦合到该室的工艺气体入口和工艺气体源耦合到处理气体入口，在天花板处的金属溅射靶，耦合到溅射靶的高压DC源，耦合到晶片支撑基座的RF等离子体源功率发生器，其频率在约60MHz和 81MHz，以及RF等离子体偏置功率发生器，其耦合到晶片支撑基座并且具有适于将能量耦合到等离子体离子的频率。

2. 发明授权

US07480129B2 Detachable electrostatic chuck for supporting a substrate in a process chamber 有权
标题翻译：用于在处理室中支撑基板的可拆卸静电卡盘
公开(公告)号：US07480129B2
公开(公告)日：2009-01-20
申请号：US11221169
申请日：2005-09-07
申请人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
发明人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A detachable electrostatic chuck can be attached to a pedestal in a process chamber. The electrostatic chuck has an electrostatic puck comprising a dielectric covering at least one electrode and a frontside surface to receive a substrate. A backside surface of the chuck has a central protrusion that can be a D-shaped mesa to facilitate alignment with a mating cavity in the pedestal. The protrusion can also have asymmetrically offset apertures, which further assist alignment, and also serve to receive electrode terminal posts and a gas tube. A heat transfer plate having an embedded heat transfer fluid channel is spring loaded on the pedestal to press against the chuck for good heat transfer.
摘要翻译：可拆卸的静电卡盘可以附接到处理室中的基座。静电吸盘具有包括覆盖至少一个电极和前侧表面的电介质的静电压盘，用于接收衬底。卡盘的背面具有可以是D形台面的中心突起，以便于与基座中的配合腔体对准。突起还可以具有不对称偏移的孔，其进一步辅助对准，并且还用于接收电极端子柱和气体管。具有嵌入式传热流体通道的传热板弹簧加载在基座上以压靠卡盘以获得良好的热传递。

3. 发明授权

US07907384B2 Detachable electrostatic chuck for supporting a substrate in a process chamber 有权
标题翻译：用于在处理室中支撑基板的可拆卸静电卡盘
公开(公告)号：US07907384B2
公开(公告)日：2011-03-15
申请号：US12315679
申请日：2008-12-04
申请人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
发明人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
IPC分类号： H01L21/68 , H01L21/683
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A substrate support has an electrostatic chuck comprising an electrostatic puck with a dielectric covering an electrode capable of being charged to energize a process gas. The chuck has a frontside surface to receive a substrate and a base plate having an annular flange. A spring loaded heat transfer plate contacts the base plate, and has a fluid channel comprising first and second spiral channels. A pedestal is below the heat transfer plate.
摘要翻译：基板支撑件具有静电卡盘，该静电卡盘包括具有电介质的静电托盘，该电介质覆盖能够被加电以对加工气体通电的电极。卡盘具有用于接收基板的前侧表面和具有环形凸缘的基板。弹簧加载的传热板接触基板，并且具有包括第一和第二螺旋通道的流体通道。底座位于传热板的下方。

4. 发明授权

US07697260B2 Detachable electrostatic chuck 有权
标题翻译：可拆卸静电卡盘
公开(公告)号：US07697260B2
公开(公告)日：2010-04-13
申请号：US10816152
申请日：2004-03-31
申请人： Karl Brown , Nora Arellano , Semyon Sherstinsky , Allen Lau , Cheng-Hsiung Tsai , Vineet Mehta , Steve Sansoni , Wei W. Wang
发明人： Karl Brown , Nora Arellano , Semyon Sherstinsky , Allen Lau , Cheng-Hsiung Tsai , Vineet Mehta , Steve Sansoni , Wei W. Wang
IPC分类号： H01L21/683 , H01T23/00 , B23B31/28
CPC分类号： H01L21/6831 , Y10T279/23
摘要： An electrostatic chuck is capable of attachment to a pedestal in a process chamber. The chuck has an electrostatic puck comprises a ceramic body with an embedded electrode. The ceramic body has a substrate support surface with an annular periphery. The chuck also has a base plate below the electrostatic puck that is a composite of a ceramic material and a metal. The base plate has an annular flange extending beyond the periphery of the ceramic body. The base plate and electrostatic puck can be supported by a support pedestal having a housing and an annular ledge that extends outwardly from the housing to attach to the annular flange of the base plate. A heat transfer plate having an embedded heat transfer fluid channel can also be provided.
摘要翻译：静电卡盘能够附着在处理室中的基座上。卡盘具有包括具有嵌入电极的陶瓷体的静电压盖。陶瓷体具有带有环形周边的基板支撑表面。卡盘还具有作为陶瓷材料和金属的复合材料的静电压盘下面的底板。基板具有延伸超过陶瓷体周边的环形凸缘。基板和静电圆盘可以由具有壳体的支撑基座支撑，并且环形凸缘从壳体向外延伸以附接到基板的环形凸缘。还可以提供具有嵌入式传热流体通道的传热板。

5. 发明申请

US20090201622A1 Detachable electrostatic chuck for supporting a substrate in a process chamber 有权
标题翻译：用于在处理室中支撑基板的可拆卸静电卡盘
公开(公告)号：US20090201622A1
公开(公告)日：2009-08-13
申请号：US12315679
申请日：2008-12-04
申请人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
发明人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A substrate support has an electrostatic chuck comprising an electrostatic puck with a dielectric covering an electrode capable of being charged to energize a process gas. The chuck has a frontside surface to receive a substrate and a base plate having an annular flange. A spring loaded heat transfer plate contacts the base plate, and has a fluid channel comprising first and second spiral channels. A pedestal is below the heat transfer plate.
摘要翻译：基板支撑件具有静电卡盘，该静电卡盘包括具有电介质的静电托盘，该电介质覆盖能够被加电以对加工气体通电的电极。卡盘具有用于接收基板的前侧表面和具有环形凸缘的基板。弹簧加载的传热板接触基板，并且具有包括第一和第二螺旋通道的流体通道。底座位于传热板的下方。

6. 发明授权

US07804040B2 Physical vapor deposition plasma reactor with arcing suppression 有权
标题翻译：具有电弧抑制的物理气相沉积等离子体反应器
公开(公告)号：US07804040B2
公开(公告)日：2010-09-28
申请号：US11438496
申请日：2006-05-22
申请人： Karl M. Brown , Semyon Sherstinksy , Vineet H. Mehta , Wei W. Wang , John A. Pipitone , Kurt J. Ahmann , Armando Valverde, Jr.
发明人： Karl M. Brown , Semyon Sherstinksy , Vineet H. Mehta , Wei W. Wang , John A. Pipitone , Kurt J. Ahmann , Armando Valverde, Jr.
IPC分类号： B23K9/00
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A physical vapor deposition reactor includes a vacuum chamber with a sidewall, a ceiling and a retractable wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, the retractable wafer support pedestal having an internal electrode and a grounded base with a conductive annular flange extending from the base. A metal sputter target at the ceiling is energized by a high voltage D.C. source. The reactor has an RF plasma source power generator with a frequency suitable for exciting kinetic electrons is coupled to either the sputter target or to the internal electrode of the pedestal. A removable shield protects the sidewall and is grounded by plural compressible conductive tabs dispersed at generally uniform intervals on the annular flange and engaging a bottom edge of the shield whenever the retractable wafer support pedestal is in an unretracted position, each of the uniform intervals being less than a wavelength corresponding to the frequency of the RF plasma source power generator.
摘要翻译：物理气相沉积反应器包括具有侧壁的真空室，天花板和靠近室的地板附近的可缩回的晶片支撑基座，以及耦合到室的真空泵，所述可缩回晶片支撑基座具有内部电极和接地基座具有从基座延伸的导电环形凸缘。天花板上的金属溅射靶由高电压直流电源供电。反应器具有RF等离子体源功率发生器，其具有适于激发动电子的频率，耦合到溅射靶或底座的内部电极。可拆卸的屏蔽件保护侧壁并且通过在环形凸缘上以大致均匀间隔分散的多个可压缩导电片接地，并且每当可缩回的晶片支撑基座处于未受损的位置时，接合屏蔽的底部边缘，每个均匀间隔较小比对应于RF等离子体源发生器的频率的波长。

7. 发明申请

US20130330920A1 METHOD AND APPARATUS FOR SUBSTRATE PRECLEAN WITH HYDROGEN CONTAINING HIGH FREQUENCY RF PLASMA 审中-公开
标题翻译：含氢高压RF等离子体的基板预处理方法及装置
公开(公告)号：US20130330920A1
公开(公告)日：2013-12-12
申请号：US13490059
申请日：2012-06-06
申请人： Guojun Liu , Xianmin Tang , Anantha Subramani , Wei W. Wang
发明人： Guojun Liu , Xianmin Tang , Anantha Subramani , Wei W. Wang
IPC分类号： H01L21/283
CPC分类号： H01L21/76814 , H01L21/02063
摘要： A high-frequency, hydrogen-based radio-frequency (RF) plasma is used to reduce a metal oxide and other contaminant disposed in an aperture that is formed in an ultra-low k dielectric material. Because the frequency of the plasma is at least about 40 MHz and the primary gas in the plasma is hydrogen, metal oxide can be advantageously removed without damaging the dielectric material.
摘要翻译：使用高频，氢基射频（RF）等离子体来减少设置在形成于超低k电介质材料的孔中的金属氧化物和其它污染物。由于等离子体的频率为至少约40MHz，等离子体中的初级气体为氢，所以可以有利地除去金属氧化物而不损坏电介质材料。

8. 发明授权

US08980045B2 Substrate cleaning chamber and components 有权
标题翻译：基材清洗室和部件
公开(公告)号：US08980045B2
公开(公告)日：2015-03-17
申请号：US13109917
申请日：2011-05-17
申请人： Martin Riker , Wei W. Wang
发明人： Martin Riker , Wei W. Wang
IPC分类号： B08B13/00 , C23F1/08 , F16L25/00 , B23P11/00 , H01J37/32
CPC分类号： H01J37/32724 , H01J37/32357 , H01J37/3244 , H01J37/32477 , H01J37/32871 , H01J2237/0213 , H01J2237/0268 , H01J2237/2001 , H01J2237/335 , H01L21/67069 , H01L21/67103 , H01L21/67207 , Y10T29/49826
摘要： A consumable ceramic liner can be used for connecting a gas outlet channel of a remote chamber to a gas inlet channel of a substrate cleaning chamber. The ceramic liner comprises an inlet cylinder having an outer diameter sized to fit in the gas outlet channel of the remote chamber, and an outlet cylinder connected to the gas inlet channel of the substrate cleaning chamber. A conical flare joins the inlet cylinder to the outlet cylinder.
摘要翻译：消耗性陶瓷衬套可用于将远程室的气体出口通道连接到衬底清洁室的气体入口通道。陶瓷衬套包括具有尺寸适于安装在远程室的气体出口通道中的外径的入口圆筒和连接到衬底清洁室的气体入口通道的出口气缸。锥形火炬将进气筒连接到出口气缸。

9. 发明授权

US07658802B2 Apparatus and a method for cleaning a dielectric film 有权
标题翻译：用于清洁电介质膜的装置和方法
公开(公告)号：US07658802B2
公开(公告)日：2010-02-09
申请号：US11284775
申请日：2005-11-22
申请人： Xinyu Fu , John Forster , Wei W. Wang
发明人： Xinyu Fu , John Forster , Wei W. Wang
IPC分类号： B08B6/00
CPC分类号： H01L21/02063 , H01J37/32357 , H01J37/32422 , H01J37/3266
摘要： An apparatus and a method of cleaning a dielectric film are provided in the present invention. In one embodiment, an apparatus of cleaning a dielectric film the apparatus includes a chamber body adapted to support a substrate therein, a remote plasma source adapted to provide a plurality of reactive radicals to the chamber body, a passage coupling the remote plasma source to the chamber body, and at least one magnet disposed adjacent the passage. In another embodiment, a method of cleaning a dielectric film that includes providing a substrate having an at least partially exposed dielectric layer disposed in a process chamber, generating a plurality of reactive radicals in a remote plasma source, flowing the reactive radicals from the remote plasma source into the process chamber through a passage having at least one magnet disposed adjacent the passage, and magnetically filtering the reactive radicals passing through the passage.
摘要翻译：在本发明中提供了一种清洁电介质膜的装置和方法。在一个实施例中，一种清洁电介质膜的装置包括适于在其中支撑衬底的室主体，适于向室主体提供多个反应性基团的远程等离子体源，将远程等离子体源耦合到室主体，以及邻近通道设置的至少一个磁体。在另一个实施例中，一种清洁电介质膜的方法，该方法包括提供具有设置在处理室中的至少部分暴露的电介质层的衬底，在远程等离子体源中产生多个反应性基团，使来自远端等离子体的反应性基团通过具有邻近通道设置的至少一个磁体的通道进入处理室，并对穿过通道的反应性基团进行磁过滤。

10. 发明授权

US07520957B2 Lid assembly for front end of line fabrication 有权
标题翻译：用于前端线制造的盖组件
公开(公告)号：US07520957B2
公开(公告)日：2009-04-21
申请号：US11137199
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode disposed opposite the first electrode. A plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode.
摘要翻译：提供了一种用于半导体处理的盖组件。在至少一个实施例中，盖组件包括第一电极，其包括具有逐渐增加的内径的扩张部分。盖组件还包括与第一电极相对设置的第二电极。在第一电极的扩展部分的内径和第二电极的第一表面之间限定等离子体腔。

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