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    • 8. 发明授权
    • Flat style coil for improved precision etch uniformity
    • 扁平型线圈,可提高精密蚀刻均匀性
    • US07513971B2
    • 2009-04-07
    • US10387948
    • 2003-03-12
    • Karl BrownVineet MehtaSee-Eng Phan
    • Karl BrownVineet MehtaSee-Eng Phan
    • H01L21/306C23C16/00
    • H01J37/321
    • An RF coil for a plasma etch chamber is provided in which the RF coil is substantially flat over a portion of at least one turn of the coil. In one embodiment, each turn of the coil is substantially flat over a majority of each turn. In one embodiment of the present inventions, each turn of the coil is substantially flat over approximately 300 degrees of the turn. In the final approximate 60 degrees of the turn, the coil is sloped down to the next turn. Each turn thus comprises a substantially flat portion in combination with a sloped portion interconnecting the turn to the next adjacent turn. In one embodiment, the RF coil having turns with substantially flat portions is generally cylindrical. Other shapes are contemplated such as a dome shape. In some applications such as an RF plasma etch reactor, it is believed that providing an RF coil having turns comprising flat portions with sloped portions interconnecting the flat portions can improve uniformity of the etch process.
    • 提供了一种用于等离子体蚀刻室的RF线圈,其中RF线圈在线圈的至少一圈的一部分上基本上是平坦的。 在一个实施例中,线圈的每个匝在每匝的大部分上基本平坦。 在本发明的一个实施例中,线圈的每一圈在转弯的大约300度处基本平坦。 在最终大约60度的转弯中,线圈向下倾斜到下一回合。 因此,每个转弯包括基本平坦的部分,与将转弯相互连接到下一个相邻转弯的倾斜部分组合。 在一个实施例中,具有基本平坦部分的匝的RF线圈通常为圆柱形。 可以想到其它形状,例如圆顶形状。 在诸如RF等离子体蚀刻反应器的一些应用中,据信提供具有包括平坦部分的匝的RF线圈,其具有互连平坦部分的倾斜部分可以提高蚀刻工艺的均匀性。
    • 10. 发明授权
    • Pedestal with integral shield
    • 带整体护罩的基座
    • US07252737B2
    • 2007-08-07
    • US10819891
    • 2004-04-06
    • Karl BrownVineet MehtaSee-Eng PhanSemyon SherstinskyAllen Lau
    • Karl BrownVineet MehtaSee-Eng PhanSemyon SherstinskyAllen Lau
    • C23C16/00C23F1/00H01L21/306
    • H01L21/67069H01J37/321H01J37/32623
    • Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.
    • 通常,提供了用于支撑衬底的衬底支撑构件。 在一个实施例中,用于支撑衬底的衬底支撑构件包括联接到下屏蔽的主体。 主体具有适于支撑基板和下表面的上表面。 下屏蔽件具有中心部分和唇部。 唇缘设置在身体的径向外侧并朝向由第一表面限定的平面突出。 唇缘与身体间隔开设置。 下屏蔽适于与设置在处理室中的上屏蔽接口以限定基本上防止等离子体迁移到构件下方的迷宫间隙。 在另一个实施例中,下屏蔽为等离子体提供短的RF接地返回路径。