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1. 发明授权

US10593539B2 Support assembly 有权
公开(公告)号：US10593539B2
公开(公告)日：2020-03-17
申请号：US13457421
申请日：2012-04-26
申请人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
发明人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
IPC分类号： B23K10/00 , H01L21/02 , H01J37/32 , H01L21/67 , C23C14/54 , C23C14/50 , C23C14/02
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.

2. 发明申请

US20120244704A1 METHOD FOR REMOVING OXIDES 有权
标题翻译：去除氧化物的方法
公开(公告)号：US20120244704A1
公开(公告)日：2012-09-27
申请号：US13489137
申请日：2012-06-05
申请人： Chien-Teh KAO , Jing-Pei(Connie) CHOU , Chiukin(Steven) LAI , Sal UMOTOY , Joel M. HUSTON , Son TRINH , Mei CHANG , Xiaoxiong (John) YUAN , Yu CHANG , Xinliang LU , Wei W. WANG , See-Eng PHAN
发明人： Chien-Teh KAO , Jing-Pei(Connie) CHOU , Chiukin(Steven) LAI , Sal UMOTOY , Joel M. HUSTON , Son TRINH , Mei CHANG , Xiaoxiong (John) YUAN , Yu CHANG , Xinliang LU , Wei W. WANG , See-Eng PHAN
IPC分类号： H01L21/3205
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在一个实施例中，该方法包括将具有氧化物层的衬底定位到处理室中，将衬底暴露于气体混合物，同时在衬底上形成挥发性膜并将衬底保持在低于65℃的温度下，加热衬底达到至少约75℃的温度以使挥发性膜升华并去除氧化物层，并且在加热基材之后在基板上沉积第一层。

3. 发明申请

US20090095334A1 SHOWERHEAD ASSEMBLY 有权
标题翻译：淋浴组件
公开(公告)号：US20090095334A1
公开(公告)日：2009-04-16
申请号：US12257104
申请日：2008-10-23
申请人： Joel M. Huston
发明人： Joel M. Huston
IPC分类号： B08B3/10
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one embodiment, the apparatus for removing native oxides from a substrate surface includes a showerhead assembly. One embodiment of a showerhead assembly includes a hollow cylinder, a disc and an annular mounting flange. The hollow cylinder has a top wall, a bottom wall, an inner diameter wall and an outer diameter wall. The disc has a top surface and a lower surface. The top surface is coupled to the inner diameter wall. The lower surface is coupled to the bottom wall. The disc has a plurality of apertures connecting the lower surface to the top surface. The annular mounting flange extends from the outer diameter wall of the hollow cylinder. The mounting flange has an upper surface and a lower surface. The upper surface is coplanar with the top wall of the hollow cylinder. The lower surface having an elevation above the top surface of the disc. In another embodiment, a resistive heater is embedded in the hollow cylinder proximate the disc.
摘要翻译：提供了一种从衬底表面去除天然氧化物的方法和装置。在一个实施例中，用于从衬底表面去除天然氧化物的装置包括喷头组件。喷头组件的一个实施例包括中空圆柱体，圆盘和环形安装凸缘。中空圆筒具有顶壁，底壁，内径壁和外径壁。盘具有顶表面和下表面。顶表面联接到内径壁。下表面联接到底壁。盘具有将下表面连接到顶表面的多个孔。环形安装凸缘从中空圆筒的外径壁延伸。安装凸缘具有上表面和下表面。上表面与中空圆柱体的顶壁共面。下表面在盘的顶表面上方具有高度。在另一个实施例中，电阻加热器嵌入在靠近盘的中空圆筒中。

4. 发明授权

US06332601B1 Liquid vaporizers for semiconductor processing systems 有权
标题翻译：用于半导体处理系统的液体蒸发器
公开(公告)号：US06332601B1
公开(公告)日：2001-12-25
申请号：US09721337
申请日：2000-11-22
申请人： Joel M. Huston , Fufa Chen
发明人： Joel M. Huston , Fufa Chen
IPC分类号： B01F304
CPC分类号： C23C16/448 , C23C16/4481
摘要： The present invention provides for improved liquid vaporizer systems and methods for their use. Vaporizer systems of the present invention are likely to be particularly useful for the vaporization of liquids having a relatively low vapor pressure, such as TDMAT. In one preferred embodiment, a liquid vaporizer system (10) includes a vaporizer unit (16) having first and second inlets (50 and 60) and an outlet (62). The vaporizer system further includes a vessel (22) having an inlet (70) and an outlet (72), whereby the vessel inlet is operably connected to the vaporizer outlet. The vessel contains a plurality of passages (78) which operably connect the vessel inlet and the vessel outlet. In this manner, liquids and/or gases flowing into the vaporizer unit through either or both of its two inlets, exit the vaporizer unit outlet and enter the vessel inlet. Liquids and/or gases pass through the plurality of passages and exit the vessel outlet. In this manner, heating vaporizer unit and vessel to desired temperatures results in the vaporization of the liquid, such as liquid TDMAT.
摘要翻译：本发明提供改进的液体蒸发器系统及其使用方法。本发明的蒸发器系统可能特别可用于蒸发具有较低蒸气压的液体，例如TDMAT。在一个优选实施例中，液体蒸发器系统（10）包括具有第一和第二入口（50和60）和出口（62）的蒸发器单元（16）。蒸发器系统还包括具有入口（70）和出口（72）的容器（22），由此容器入口可操作地连接到蒸发器出口。容器包含可操作地连接容器入口和容器出口的多个通道（78）。以这种方式，通过其两个入口中的一个或两个流入蒸发器单元的液体和/或气体离开蒸发器单元出口并进入容器入口。液体和/或气体通过多个通道并离开容器出口。以这种方式，使加热蒸发器单元和容器达到所需温度导致液体（例如液体TDMAT）的蒸发。

5. 发明授权

US08343307B2 Showerhead assembly 有权
标题翻译：喷头总成
公开(公告)号：US08343307B2
公开(公告)日：2013-01-01
申请号：US12257104
申请日：2008-10-23
申请人： Joel M. Huston
发明人： Joel M. Huston
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one embodiment, the apparatus for removing native oxides from a substrate surface includes a showerhead assembly. One embodiment of a showerhead assembly includes a hollow cylinder, a disc and an annular mounting flange. The hollow cylinder has a top wall, a bottom wall, an inner diameter wall and an outer diameter wall. The disc has a top surface and a lower surface. The top surface is coupled to the inner diameter wall. The lower surface is coupled to the bottom wall. The disc has a plurality of apertures connecting the lower surface to the top surface. The annular mounting flange extends from the outer diameter wall of the hollow cylinder. The mounting flange has an upper surface and a lower surface. The upper surface is coplanar with the top wall of the hollow cylinder. The lower surface having an elevation above the top surface of the disc. In another embodiment, a resistive heater is embedded in the hollow cylinder proximate the disc.
摘要翻译：提供了一种从衬底表面去除天然氧化物的方法和装置。在一个实施例中，用于从衬底表面去除天然氧化物的装置包括喷头组件。喷头组件的一个实施例包括中空圆柱体，圆盘和环形安装凸缘。中空圆筒具有顶壁，底壁，内径壁和外径壁。盘具有顶表面和下表面。顶表面联接到内径壁。下表面联接到底壁。盘具有将下表面连接到顶表面的多个孔。环形安装凸缘从中空圆筒的外径壁延伸。安装凸缘具有上表面和下表面。上表面与中空圆柱体的顶壁共面。下表面在盘的顶表面上方具有高度。在另一个实施例中，电阻加热器嵌入在靠近盘的中空圆筒中。

6. 发明申请

US20090218324A1 DIRECT REAL-TIME MONITORING AND FEEDBACK CONTROL OF RF PLASMA OUTPUT FOR WAFER PROCESSING 有权
标题翻译： RF等离子体输出的直接实时监控和反馈控制
公开(公告)号：US20090218324A1
公开(公告)日：2009-09-03
申请号：US12039514
申请日：2008-02-28
申请人： David T. Or , Yu Chang , William Kuang , Joel M. Huston , Chien-Teh Kao , Mei Chang
发明人： David T. Or , Yu Chang , William Kuang , Joel M. Huston , Chien-Teh Kao , Mei Chang
IPC分类号： H05H1/36 , C23C16/505
CPC分类号： H05H1/0081 , C23C16/5096 , C23C16/52 , H01J37/32082 , H01J37/32935 , H01J37/3299
摘要： A method and apparatus for controlling power output of a capacitatively-coupled plasma are provided. A detector is disposed on the power delivery conduit carrying power to one electrode to detect fluctuations in power output to the electrode. The detector is coupled to a signal generator, which converts the RF input signal to a constant control signal. A controller adjusts power input to the RF generator by comparing the control signal to a reference.
摘要翻译：提供一种用于控制电容耦合等离子体的功率输出的方法和装置。检测器设置在电力输送管道上，该电力输送管道承载一个电极的功率，以检测输出到电极的功率的波动。检测器耦合到信号发生器，其将RF输入信号转换成恒定的控制信号。控制器通过将控制信号与参考值进行比较来调节对RF发生器的功率输入。

7. 发明授权

US07520957B2 Lid assembly for front end of line fabrication 有权
标题翻译：用于前端线制造的盖组件
公开(公告)号：US07520957B2
公开(公告)日：2009-04-21
申请号：US11137199
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode disposed opposite the first electrode. A plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode.
摘要翻译：提供了一种用于半导体处理的盖组件。在至少一个实施例中，盖组件包括第一电极，其包括具有逐渐增加的内径的扩张部分。盖组件还包括与第一电极相对设置的第二电极。在第一电极的扩展部分的内径和第二电极的第一表面之间限定等离子体腔。

8. 发明授权

US07396480B2 Method for front end of line fabrication 有权
标题翻译：前端制造方法
公开(公告)号：US07396480B2
公开(公告)日：2008-07-08
申请号：US11137609
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在至少一个实施例中，该方法包括将基板表面支撑在真空室中，并从室内的气体混合物产生反应物质。然后将衬底表面在腔室内冷却，并且反应物质被引导到冷却的衬底表面以与其上的天然氧化物反应并在衬底表面上形成膜。然后将衬底表面在室内加热以使膜蒸发。

9. 发明授权

US08846163B2 Method for removing oxides 有权
标题翻译：去除氧化物的方法
公开(公告)号：US08846163B2
公开(公告)日：2014-09-30
申请号：US13489137
申请日：2012-06-05
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： B05D3/06 , H05B3/00 , C23C16/00 , H01J37/32 , H01L21/67 , H01L21/02
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在一个实施例中，该方法包括将具有氧化物层的衬底定位到处理室中，将衬底暴露于气体混合物，同时在衬底上形成挥发性膜并将衬底保持在低于65℃的温度下，加热衬底达到至少约75℃的温度以使挥发性膜升华并去除氧化物层，并且在加热基材之后在基板上沉积第一层。

10. 发明申请

US20140252015A1 High Temperature Process Chamber Lid 有权
标题翻译：高温加工室盖
公开(公告)号：US20140252015A1
公开(公告)日：2014-09-11
申请号：US14204252
申请日：2014-03-11
申请人： Ilker Durukan , Joel M. Huston , Dien-Yeh Wu , Chien-Teh Kao , Mei Chang
发明人： Ilker Durukan , Joel M. Huston , Dien-Yeh Wu , Chien-Teh Kao , Mei Chang
IPC分类号： B65D43/02
CPC分类号： H01L21/67126 , H01L21/6719
摘要： Lid assemblies for processing chamber and processing chambers including the lid assemblies are described. The lid assemblies include a high temperature lid module and a housing. The high temperature lid module being positioned adjacent a process liner of a processing chamber. The flexible housing positioned around the high temperature lid module and joined to the high temperature lid module with an elastomeric ring.
摘要翻译：描述了包括盖组件的处理室和处理室的盖组件。盖组件包括高温盖模块和壳体。高温盖模块位于处理室的处理衬垫附近。柔性壳体围绕高温盖模块定位，并与弹性体环连接到高温盖模块。

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