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1. 发明申请

WO2007110815A1 ELECTRIC DEVICE WITH PHASE CHANGE RESISTOR 审中-公开
标题翻译：具有相变电阻的电气设备
公开(公告)号：WO2007110815A1
公开(公告)日：2007-10-04
申请号：PCT/IB2007/050995
申请日：2007-03-21
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , JEDEMA, Friso, J. , ATTENBOROUGH, Karen , DAAMEN, Roel , IN 'T ZANDT, Michael, A., A.
发明人： JEDEMA, Friso, J. , ATTENBOROUGH, Karen , DAAMEN, Roel , IN 'T ZANDT, Michael, A., A.
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/1293 , H01L27/2436 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/1246
摘要： An electric device has an electrically switchable resistor (2') comprising a phase change material. The resistance value of the resistor can be changed between at least two values by changing the phase of the phase change material within a part of the resistor called the switching zone (12') using Joule heating of the resistor. The device comprises a body (24') encapsulating the resistor, which body comprises at least two abutting regions (26', 28') having different thermally insulating properties. These regions form a thermally insulating contrast with which the dimension of the switching zone can be determined without having to alter the dimensions of the resistor. Such a device can be used in electronic memory or reconfigurable logic circuits.
摘要翻译：电气装置具有包括相变材料的电可开关电阻器（2'）。通过使用电阻器的焦耳加热来改变称为开关区（12'）的电阻器的一部分内的相变材料的相位，可以在至少两个值之间改变电阻器的电阻值。该装置包括封装电阻器的本体（24'），该主体包括具有不同绝热性能的至少两个邻接区域（26'，28'）。这些区域形成隔热对比度，可以确定开关区域的尺寸，而不必改变电阻器的尺寸。这种装置可以用于电子存储器或可重构逻辑电路中。

2. 发明申请

WO2003095145A1 CLEANING HEAD 审中-公开
标题翻译：清洁头
公开(公告)号：WO2003095145A1
公开(公告)日：2003-11-20
申请号：PCT/IB2003/001559
申请日：2003-04-11
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , NGUYEN HOANG, Viet , DAAMEN, Roel
发明人： NGUYEN HOANG, Viet , DAAMEN, Roel
IPC分类号： B24B37/04
CPC分类号： B24B53/017
摘要： A cleaning head (10) for cleaning a polishing surface (42) of a polishing tool (40) comprises a dispensing element (11) for dispensing a cleaning liquid (13) onto the polishing surface (42) and a removing element (21) having a removing plane (22), able to remove cleaning liquid (13) from the polishing surface (42) by a vacuum. The removing element (21) laterally circumferentially encloses a perpendicular projection of the dispensing element (11) onto the removing plane (22), thereby preventing the cleaning liquid (13) from substantially modifying the composition of the polishing liquid used in the polishing process. The cleaning head (10) may further comprise an agitator (31) for mechanically treating the polishing surface (42). A polishing tool (40) and a method of in-situ cleaning of the polishing surface (42) use this cleaning head (10). It is particularly suitable for fixed abrasive CMP and abrasive-free CMP. The yield and quality of semiconductor devices manufactured using this polishing method with in-situ cleaning is improved.
摘要翻译：用于清洁抛光工具（40）的抛光表面（42）的清洁头（10）包括用于将清洁液体（13）分配到抛光表面（42）上的分配元件（11）和去除元件（21）具有能够通过真空从抛光表面（42）去除清洁液体（13）的去除平面（22）。移除元件（21）横向周向地包围分配元件（11）到除去平面（22）上的垂直突起，从而防止清洁液体（13）基本上改变抛光过程中使用的抛光液的组成。清洁头（10）还可以包括用于机械处理抛光表面（42）的搅拌器（31）。抛光工具（40）和抛光表面（42）的原位清洁方法使用该清洁头（10）。特别适用于固定磨料CMP和无磨料CMP。提高使用这种具有原位清洗的抛光方法制造的半导体器件的产量和质量。

3. 发明申请

WO2004105122A1 METHOD OF MANUFACTURING A SUBSTRATE, HAVING A POROUS DIELECTRIC LAYER AND AIR GAPS, AND A SUBSTRATE 审中-公开
标题翻译：制造具有多孔介电层和空气GAPS的基板的方法，以及基板
公开(公告)号：WO2004105122A1
公开(公告)日：2004-12-02
申请号：PCT/IB2004/050715
申请日：2004-05-17
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , DAAMEN, Roel , VERHEIJDEN, Greja, J., A., M.
发明人： DAAMEN, Roel , VERHEIJDEN, Greja, J., A., M.
IPC分类号： H01L21/768
CPC分类号： H01L21/7682 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： A method to produce air gaps between metal lines (8(i)( and within dielectrics. The method consists of obtaining a dual damascene structure, applying a diffusion barrier layer (10) directly on the planarized surface and performing a lithography step, thus shielding the metal lines underneath the diffusion barrier layer. Optionally, some portions of large dielectric areas (6) between the metal lines (8(i)) are also shielded. The exposed diffusion barrier layer portions and underlying dielectric are etched. A layer of a material that can be decomposed in volatile components by heating to a temperature of typically between 150-450°C is applied and planarized by etching or CMP. A dielectric layer (20) that is permeable to the decomposition products is deposited and subsequently the substrate is heated. Then, the disposable layer decomposes and disappears through the permeable dielectric layer, leaving air gaps (22) behind in between the metal lines (8(i)) and the large dielectric areas.
摘要翻译：一种在金属线（8（i）（和电介质之间）之间产生空气间隙的方法，该方法包括获得双镶嵌结构，在平坦化表面上直接施加扩散阻挡层（10）并执行光刻步骤，从而屏蔽可选地，金属线（8（i））之间的大电介质区域（6）的一些部分也被屏蔽，暴露的扩散阻挡层部分和下面的电介质被蚀刻，通过加热到通常在150-450℃之间的温度可以在易挥发组分中分解的材料被施加并通过蚀刻或CMP平坦化，沉积可分解产物的电介质层（20），随后将衬底然后，一次性层通过可渗透的介电层分解并消失，在金属线（8（i））和大介质区域之间留下空隙（22）。

4. 发明申请

WO2004025720A1 MANUFACTURING AN IC 审中-公开
标题翻译：制造IC
公开(公告)号：WO2004025720A1
公开(公告)日：2004-03-25
申请号：PCT/IB2003/003770
申请日：2003-08-13
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW , NGUYEN HOANG, Viet , DAAMEN, Roel
发明人： NGUYEN HOANG, Viet , DAAMEN, Roel
IPC分类号： H01L21/321
CPC分类号： H01L21/3212 , H01L21/7684
摘要： The method for manufacturing an integrated circuit according to the invention starts with providing a pre-fabricated integrated circuit (10) having a surface (11) coated with a dielectric material (12), a barrier layer (14) and a metal (15). The dielectric material (12), which is separated from the metal (15) by the barrier layer (14), has an opening (13), which is filled with the metal (15). Portions of the metal (15) outside the opening (13) are removed by a first chemical mechanical polishing step, which preferentially removes the metal (15) to locally expose the barrier layer (14). Portions of the locally exposed barrier layer (14) are removed by a second chemical mechanical polishing step, which preferentially removes the barrier layer (14). According to the invention, the first chemical mechanical polishing step is repeated after the second chemical mechanical polishing step has been carried out. The apparatus is able to perform the method. The computer program is able to control the method.
摘要翻译：根据本发明的集成电路的制造方法开始于提供具有涂覆有电介质材料（12），阻挡层（14）和金属（15）的表面（11）的预制集成电路（10）。通过阻挡层（14）与金属（15）分离的电介质材料（12）具有填充有金属（15）的开口（13）。通过第一化学机械抛光步骤去除开口（13）外部的金属（15）的部分，其优先移除金属（15）以局部暴露阻挡层（14）。通过第二化学机械抛光步骤去除局部暴露的阻挡层（14）的部分，其优先去除阻挡层（14）。根据本发明，在进行了第二化学机械抛光步骤之后，重复第一化学机械抛光步骤。该装置能够执行该方法。计算机程序能够控制方法。

5. 发明申请

WO2004073060A1 POLISHING APPARATUS AND TWO-STEP METHOD OF POLISHING A METAL LAYER OF AN INTEGRATED CIRCUIT 审中-公开
标题翻译：抛光装置和抛光集成电路金属层的两步法
公开(公告)号：WO2004073060A1
公开(公告)日：2004-08-26
申请号：PCT/IB2004/050047
申请日：2004-01-23
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , NGUYEN HOANG, Viet , DAAMEN, Roel
发明人： NGUYEN HOANG, Viet , DAAMEN, Roel
IPC分类号： H01L21/768
CPC分类号： H01L21/3212 , H01L21/7684
摘要： The method of manufacturing an integrated circuit (IC) according to the invention starts with providing a pre-fabricated integrated circuit (10) comprising an electrical device (2) and having a surface (11) coated with a dielectric material (12) and a metal (15). The dielectric material (12), which may be separated from the metal (15) by the barrier layer (14), has an opening (13), which is filled with the metal (15). Portions of the metal (15) outside the opening (13) are removed by polishing for a first period of time, after which an etching agent (25) is added to the polishing liquid (24) and polishing is continued for a second period of time for removing portions of the metal (15) remaining outside the opening (13). The polishing apparatus (40) is able to perform the method.
摘要翻译：根据本发明的制造集成电路（IC）的方法开始于提供一种包括电气装置（2）并具有涂覆有介电材料（12）的表面（11）的预制集成电路（10）和金属（15）。可以通过阻挡层（14）与金属（15）分离的电介质材料（12）具有填充有金属（15）的开口（13）。通过在第一时间内抛光去除开口（13）外部的金属部分（15），然后将蚀刻剂（25）加入到抛光液体（24）中，继续研磨第二周期用于去除剩余在开口（13）外部的金属（15）的部分的时间。抛光装置（40）能够执行该方法。

6. 发明申请

WO2004023550A1 METHOD FOR FABRICATION OF IN-LAID METAL INTERCONNECTS 审中-公开
标题翻译：内部金属互连的制造方法
公开(公告)号：WO2004023550A1
公开(公告)日：2004-03-18
申请号：PCT/IB2003/003440
申请日：2003-08-04
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW , DAAMEN, Roel , NGUYEN HOANG, Viet , HOOFMAN, Romano, J., O., M. , VERHEIJDEN, Greja, J., A., M.
发明人： DAAMEN, Roel , NGUYEN HOANG, Viet , HOOFMAN, Romano, J., O., M. , VERHEIJDEN, Greja, J., A., M.
IPC分类号： H01L21/768
CPC分类号： H01L21/7684 , H01L21/7688
摘要： The present invention relates to a method for fabrication of in-laid metal inter onnects. The method comprises the steps of providing a substrate with a dielectr c material(l) on top thereof, depositing a protection layer(2) on top of the die ectric material, depositing a sacrificial layer (7) on top of the protection laye , the sacrificial layer having a mechanical strength that is lower than the mech nical strength of the protection layer, making an opening(3) through the sacrifi ial layer, through the protection layer and into the dielectric material, deposi ing a barrier layer (4)in the opening and on the sacrificial layer, depositing m tal material (5) on the barrier layer, the metal material filling the opening, re oving portions of the metal material existing beyond the opening by means of pol shing, and removing the barrier layer and the sacrificial layer in one polishing step.
摘要翻译：本发明涉及一种制造嵌入式金属接头的方法。该方法包括以下步骤：在其顶部提供具有介电体材料（1）的衬底，在管芯材料的顶部上沉积保护层（2），在保护层的顶部上沉积牺牲层（7）所述牺牲层的机械强度低于所述保护层的机械强度，通过所述牺牲层通过所述保护层和介电材料形成开口（3），从而将阻挡层（4）在开口和牺牲层上，在阻挡层上沉积m材料（5），填充开口的金属材料，借助于通过聚光而存在于开口之外的金属材料的部分，并且去除阻挡层和一个抛光步骤中的牺牲层。

7. 发明申请

WO2011073837A1 LIQUID IMMERSION SENSOR 审中-公开
标题翻译：液体浸入式传感器
公开(公告)号：WO2011073837A1
公开(公告)日：2011-06-23
申请号：PCT/IB2010/055480
申请日：2010-11-29
申请人： NXP B.V. , HUMBERT, Aurelie , MERZ, Matthias , DAAMEN, Roel , PONOMAREV, Youri Victorovitch
发明人： HUMBERT, Aurelie , MERZ, Matthias , DAAMEN, Roel , PONOMAREV, Youri Victorovitch
IPC分类号： G01N27/04
CPC分类号： G01N27/041 , G01N27/048
摘要： Disclosed is a liquid immersion sensor comprising a substrate (10) carrying a conductive sensing element (20) and a corrosive agent (30) for corroding the conductive sensing element, said corrosive agent being immobilized in the vicinity of the conductive sensing element and being soluble in said liquid.
摘要翻译：公开了一种液浸传感器，其包括承载导电感测元件（20）的基底（10）和用于腐蚀导电感测元件的腐蚀剂（30），所述腐蚀剂固定在导电感测元件附近并且是可溶的在所述液体中。

8. 发明申请

WO2010004534A1 BULK ACOUSTIC WAVE RESONATOR USING ACOUSTIC REFLECTOR LAYERS AS INDUCTIVE OR CAPACITIVE CIRCUIT ELEMENT 审中-公开
标题翻译：使用声学反射器层作为感应或电容电路元件的大容量声波谐振器
公开(公告)号：WO2010004534A1
公开(公告)日：2010-01-14
申请号：PCT/IB2009/053019
申请日：2009-07-10
申请人： NXP B.V. , VANHELMONT, Frederik, Willem, Maurits , SIMIN, Alexander , JANSMAN, Andreas Bernardus Maria , RUIGROK, Jaap , DAAMEN, Roel
发明人： VANHELMONT, Frederik, Willem, Maurits , SIMIN, Alexander , JANSMAN, Andreas Bernardus Maria , RUIGROK, Jaap , DAAMEN, Roel
IPC分类号： H03H9/58 , H03H9/17
CPC分类号： H03H9/589 , H03H9/175
摘要： A resonator comprises a bottom electrode layer (12), a top electrode layer (14) and a piezoelectric layer (10) sandwiched between the top and bottom electrode layers. A multi-layer acoustic reflector (16) is provided beneath the bottom electrode layer. The external electrical connections to the resonator comprise a first electrical connection to the top or bottom electrode layer and a second electrical connection to one of the layers of the acoustic reflector (16). The multi-layer acoustic reflector layers can define at least one circuit element in the form of a capacitor or inductor which forms part of the resonator circuit. Alternatively, the electrical connections can be used to define a resonator operating at a different frequency. This arrangement makes use of the layers of the reflector to provide additional circuit functions, including an inductor and/or capacitor, or to change the frequency characteristics. This enables additional circuit elements to be defined in an integrated way and without using additional substrate area.
摘要翻译：谐振器包括底部电极层（12），顶部电极层（14）和夹在顶部和底部电极层之间的压电层（10）。多层声反射器（16）设置在底电极层的下方。到谐振器的外部电连接器包括到顶部或底部电极层的第一电连接以及到声反射器（16）的一个层的第二电连接。多层声反射器层可以限定形成谐振器电路的一部分的电容器或电感器形式的至少一个电路元件。或者，电连接可用于限定以不同频率工作的谐振器。这种布置使用反射器的层来提供附加的电路功能，包括电感器和/或电容器，或者改变频率特性。这使得能够以集成的方式定义附加的电路元件，而不需要额外的衬底区域。

9. 发明申请

WO2009147556A2 MICROSCOPIC STRUCTURE PACKAGING METHOD AND DEVICE WITH PACKAGED MICROSCOPIC STRUCTURE 审中-公开
标题翻译：具有包装微结构的微结构包装方法和装置
公开(公告)号：WO2009147556A2
公开(公告)日：2009-12-10
申请号：PCT/IB2009/052083
申请日：2009-05-19
申请人： NXP B.V. , VERHEIJDEN, Greja, J., A., M. , DAAMEN, Roel , ROOSEN, Harold, H.
发明人： VERHEIJDEN, Greja, J., A., M. , DAAMEN, Roel , ROOSEN, Harold, H.
IPC分类号： B81C1/00
CPC分类号： B81C1/00476 , B81C2201/0108 , B81C2203/0136
摘要： The present invention discloses a method of packaging a microscopic structure (12). The method comprises the steps of forming the microscopic structure (12) on a substrate (10); depositing a layer (14) of a thermally decomposable polymer over the substrate, thereby embedding the microscopic structure; patterning the deposited layer (14) such that the microscopic structure is embedded in a portion of the patterned layer, the side walls of said portion (14) forming a substantially right angle with the substrate (10); growing a capping layer (18) over the portion, wherein the substantially right angles cause the formation of at least one channel (20) from the portion (14) through the capping layer (18); and decomposing the polymer, whereby the decomposition products escape from the portion (14) through said channel (20). The present invention further discloses a device including a microscopic structure packaged in accordance with the above method.
摘要翻译：本发明公开了一种包装微结构（12）的方法。该方法包括在基板（10）上形成微观结构（12）的步骤。在衬底上沉积可热分解的聚合物层（14），从而嵌入微观结构; 图案化沉积层（14），使得微观结构嵌入图案化层的一部分中，所述部分（14）的侧壁与衬底（10）形成大致直角; 在所述部分上生长覆盖层（18），其中所述基本上直角导致从所述部分（14）穿过所述封盖层（18）形成至少一个通道（20）。并分解聚合物，由此分解产物通过所述通道（20）从部分（14）逸出。本发明还公开了一种根据上述方法包装的微观结构的装置。

10. 发明申请

WO2008084366A1 METHOD OF MAKING AN INTERCONNECT STRUCTURE 审中-公开
标题翻译：制造互连结构的方法
公开(公告)号：WO2008084366A1
公开(公告)日：2008-07-17
申请号：PCT/IB2007/055354
申请日：2007-12-31
申请人： NXP B.V. , DAAMEN, Roel , WOLTERS, Robertus, A., M. , MAAS, Martinus, P., M. , BANCKEN, Pascal , MICHELON, Julien, M., M.
发明人： DAAMEN, Roel , WOLTERS, Robertus, A., M. , MAAS, Martinus, P., M. , BANCKEN, Pascal , MICHELON, Julien, M., M.
IPC分类号： H01L21/768
CPC分类号： H01L21/7682 , H01L21/76808 , H01L21/76835 , H01L21/76849 , H01L21/76867 , H01L2221/1031
摘要： A damascene process is described using a copper fill process to fill a trench (12). The copper fill (20) is started with a deposited seed layer which includes (5) copper and titanium. Some titanium migrates to the surface during the copper fill process. The structure is annealed in a nitrogen atmosphere which creates a self-aligned TiN barrier (24) at the surface of the copper fill (20). Air gaps (26) may be created in the same annealing process. The process may be used to form a multilayer structure.
摘要翻译：描述使用铜填充工艺填充沟槽（12）的镶嵌工艺。铜填充物（20）由包括（5）铜和钛的沉积种子层开始。在铜填充过程中，一些钛迁移到表面。该结构在氮气氛中退火，在铜填充物（20）的表面产生自对准TiN阻挡层（24）。可以在相同的退火过程中产生气隙（26）。该方法可用于形成多层结构。

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