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1. 发明申请

WO2010004534A1 BULK ACOUSTIC WAVE RESONATOR USING ACOUSTIC REFLECTOR LAYERS AS INDUCTIVE OR CAPACITIVE CIRCUIT ELEMENT 审中-公开
标题翻译：使用声学反射器层作为感应或电容电路元件的大容量声波谐振器
公开(公告)号：WO2010004534A1
公开(公告)日：2010-01-14
申请号：PCT/IB2009/053019
申请日：2009-07-10
申请人： NXP B.V. , VANHELMONT, Frederik, Willem, Maurits , SIMIN, Alexander , JANSMAN, Andreas Bernardus Maria , RUIGROK, Jaap , DAAMEN, Roel
发明人： VANHELMONT, Frederik, Willem, Maurits , SIMIN, Alexander , JANSMAN, Andreas Bernardus Maria , RUIGROK, Jaap , DAAMEN, Roel
IPC分类号： H03H9/58 , H03H9/17
CPC分类号： H03H9/589 , H03H9/175
摘要： A resonator comprises a bottom electrode layer (12), a top electrode layer (14) and a piezoelectric layer (10) sandwiched between the top and bottom electrode layers. A multi-layer acoustic reflector (16) is provided beneath the bottom electrode layer. The external electrical connections to the resonator comprise a first electrical connection to the top or bottom electrode layer and a second electrical connection to one of the layers of the acoustic reflector (16). The multi-layer acoustic reflector layers can define at least one circuit element in the form of a capacitor or inductor which forms part of the resonator circuit. Alternatively, the electrical connections can be used to define a resonator operating at a different frequency. This arrangement makes use of the layers of the reflector to provide additional circuit functions, including an inductor and/or capacitor, or to change the frequency characteristics. This enables additional circuit elements to be defined in an integrated way and without using additional substrate area.
摘要翻译：谐振器包括底部电极层（12），顶部电极层（14）和夹在顶部和底部电极层之间的压电层（10）。多层声反射器（16）设置在底电极层的下方。到谐振器的外部电连接器包括到顶部或底部电极层的第一电连接以及到声反射器（16）的一个层的第二电连接。多层声反射器层可以限定形成谐振器电路的一部分的电容器或电感器形式的至少一个电路元件。或者，电连接可用于限定以不同频率工作的谐振器。这种布置使用反射器的层来提供附加的电路功能，包括电感器和/或电容器，或者改变频率特性。这使得能够以集成的方式定义附加的电路元件，而不需要额外的衬底区域。

2. 发明申请

WO2010113106A1 A DEVICE WITH AN ELECTROACOUSTIC BALUN 审中-公开
标题翻译：具有电动巴伦的装置
公开(公告)号：WO2010113106A1
公开(公告)日：2010-10-07
申请号：PCT/IB2010/051364
申请日：2010-03-30
申请人： NXP B.V. , JANSMAN, Andreas Bernardus Maria
发明人： JANSMAN, Andreas Bernardus Maria
IPC分类号： H03H9/00 , H03H9/56
CPC分类号： H03H9/0095 , H03H9/0028 , H03H9/564
摘要： A device has an electroacoustic interface between interfaces for balanced electrical signals and unbalanced electrical signals (i.e. a balun) includes a film (10) of piezoelectric material having a first and second pair of electrodes on a first surface a common electrode (14, 16, 18, 44a, b, 46, 48), with at least partial overlaps with all of the electrodes (14, 16, 18, 44a, b, 46, 48) of the first and second pair, on a second surface. The interfaces between the electrodes in the first and second pair have geometrically identical shapes. Piezoelectrically polarized regions are provided in the film (10) at the overlaps of the electrodes with the electrode arrangement. The direction of polarization components of the regions in the overlaps with the first electrode (14, 44a) and the second electrode (16, 46) in the first pair are equal to each other. To provide for balun coupling, the directions of the polarization components in the overlaps with the first electrode (14, 44b) and the second electrode (18, 48) in the second pair are mutually opposite.
摘要翻译：一种器件具有用于平衡电信号和不平衡电信号的接口之间的电声界面（即，平衡 - 不平衡变换器），包括压电材料的膜（10），在第一表面上具有第一和第二对电极，公共电极（14,16，在第二表面上与第一和第二对的所有电极（14,16,18,44a，b，46,48）至少部分重叠。第一和第二对中的电极之间的界面具有几何相同的形状。在电极与电极装置的重叠处，在膜（10）中设置压电极化区域。与第一对电极（14,44a）和第二电极（16,46）重叠的区域的偏振分量的方向彼此相等。为了提供平衡 - 不平衡转换耦合，第二对中与第一电极（14,44b）和第二电极（18,48）重叠的偏振分量的方向相互相反。

3. 发明申请

WO2010113107A1 MEMS TRANSDUCER FOR AN AUDIO DEVICE 审中-公开
标题翻译：用于音频设备的MEMS传感器
公开(公告)号：WO2010113107A1
公开(公告)日：2010-10-07
申请号：PCT/IB2010/051370
申请日：2010-03-30
申请人： NXP B.V. , VAN LIPPEN, Twan , LANGEREIS, Geert , LUTZ, Josef , SUY, Hilco , VAN DER AVOORT, Cas , JANSMAN, Andreas Bernardus Maria
发明人： VAN LIPPEN, Twan , LANGEREIS, Geert , LUTZ, Josef , SUY, Hilco , VAN DER AVOORT, Cas , JANSMAN, Andreas Bernardus Maria
IPC分类号： H04R19/00
CPC分类号： H04R19/00 , H04R2499/11 , Y10T29/49005
摘要： A MEMS transducer (10) for an audio device comprises a substrate (12), a membrane (14) attached to the substrate (12), and a back-electrode (18) attached to the substrate (12), wherein a resonant frequency of the back-electrode (18) is matched to a resonant frequency of the membrane (14). Further, a method of manufacturing a MEMS transducer (19) for an audio device comprises attaching a membrane to a substrate (12), attaching a back-electrode (18) to the substrate (12), matching a resonant frequency of the back-electrode (18) to a resonant frequency of the membrane (14).
摘要翻译：用于音频装置的MEMS换能器（10）包括基板（12），附着到基板（12）的膜（14）和附接到基板（12）的背电极（18），其中谐振频率（18）的谐振频率匹配。此外，制造用于音频装置的MEMS换能器（19）的方法包括将膜附接到基板（12），将背电极（18）附接到基板（12），匹配背面电极（18）的谐振频率，电极（18）到膜（14）的共振频率。

4. 发明公开

EP3301715A1 DEVICE AND METHOD FOR DETECTING SEMICONDUCTOR SUBSTRATE THICKNESS 审中-公开
标题翻译：用于检测半导体基片厚度的装置和方法
公开(公告)号：EP3301715A1
公开(公告)日：2018-04-04
申请号：EP17190663.9
申请日：2017-09-12
申请人： NXP B.V.
发明人： JANSMAN, Andreas Bernardus Maria , WIDDERSHOVEN, Franciscus Petrus , DINH, Viet Thanh
IPC分类号： H01L23/58
CPC分类号： H03K19/003 , G06F21/75 , H01L22/34 , H01L23/573 , H01L23/576 , H01L27/0647 , H01L29/0649 , H01L29/861 , H01L29/8611 , H01L29/8613
摘要： Embodiments of devices and method for detecting semiconductor substrate thickness are disclosed. In an embodiment, an IC device includes a semiconductor substrate, a charge emitter embedded in the semiconductor substrate and configured to produce an electrical charge in the semiconductor substrate and a charge sensor embedded in the semiconductor substrate and configured to generate a response signal in response to the electrical charge produced in the semiconductor substrate. The magnitude of the response signal depends on the thickness of the semiconductor substrate.
摘要翻译：公开了用于检测半导体衬底厚度的器件和方法的实施例。在一个实施例中，IC器件包括半导体衬底，嵌入在半导体衬底中并被配置为在半导体衬底中产生电荷的电荷发射器以及嵌入在半导体衬底中并被配置为响应于在半导体衬底中产生的电荷。响应信号的大小取决于半导体衬底的厚度。

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