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    • 6. 发明授权
    • Ultraviolet treatment apparatus
    • 紫外线治疗仪
    • US08242460B2
    • 2012-08-14
    • US13072668
    • 2011-03-25
    • Hongyu YueJunjun LiuJacques FaguetDorel I. Toma
    • Hongyu YueJunjun LiuJacques FaguetDorel I. Toma
    • H01J37/20
    • H01L21/67028B08B7/0042B08B7/005B08B7/0057H01L21/67115Y10S430/145
    • A process module for treating a dielectric film and, in particular, a process module for exposing, for example, a low dielectric constant (low-k) dielectric film to ultraviolet (UV) radiation is described. The process module includes a process chamber, a substrate holder coupled to the process chamber and configured to support a substrate, and a radiation source coupled to the process chamber and configured to expose the dielectric film to electromagnetic (EM) radiation. The radiation source includes a UV source, wherein the UV source has a UV lamp, and a reflector for directing reflected UV radiation from the UV lamp to the substrate. The reflector has a dichroic reflector, and a non-absorbing reflector disposed between the UV lamp and the substrate, and configured to reflect UV radiation from the UV lamp towards the dichroic reflector, wherein the non-absorbing reflector substantially prevents direct UV radiation from the UV lamp to the substrate.
    • 描述了用于处理电介质膜的处理模块,特别是用于将例如低介电常数(低k)电介质膜暴露于紫外线(UV))辐射的处理模块。 处理模块包括处理室,耦合到处理室并被配置为支撑衬底的衬底保持器,以及耦合到处理室并被配置为将电介质膜暴露于电磁(EM)辐射的辐射源。 辐射源包括UV源,其中UV源具有UV灯,以及用于将来自UV灯的反射的UV辐射引导到衬底的反射器。 反射器具有二向色反射器和设置在UV灯和衬底之间的非吸收反射器,并被配置为将来自UV灯的UV辐射反射到二向色反射器,其中非吸收反射器基本上防止来自UV灯的直接UV辐射 紫外灯到底物。
    • 7. 发明授权
    • Method for integrating low-k dielectrics
    • 低k电介质的集成方法
    • US09017933B2
    • 2015-04-28
    • US13072662
    • 2011-03-25
    • Junjun LiuDorel I. TomaHongyu Yue
    • Junjun LiuDorel I. TomaHongyu Yue
    • G03F7/40H01L21/67B08B7/00
    • H01L21/67028B08B7/0042B08B7/005B08B7/0057H01L21/67115Y10S430/145
    • A method for treating a dielectric film on a substrate and, in particular, a method for integrating a low-k dielectric film with subsequently formed metal interconnects is described. The method includes preparing a dielectric film on a substrate, wherein the dielectric film is a low-k dielectric film having a dielectric constant less than or equal to a value of about 4. Thereafter, the method further includes performing a preliminary curing process on the dielectric film, forming a pattern in the dielectric film using a lithographic process and an etching process, removing undesired residues from the substrate, and performing a final curing process on the dielectric film, wherein the final curing process includes irradiating the substrate with ultraviolet (UV) radiation.
    • 描述了一种用于处理衬底上的电介质膜的方法,特别是用于将低k电介质膜与随后形成的金属互连集成的方法。 该方法包括在基板上制备电介质膜,其中介电膜是介电常数小于或等于约4的低k电介质膜。此后,该方法还包括对 电介质膜,使用光刻工艺和蚀刻工艺在电介质膜中形成图案,从衬底去除不需要的残留物,并在电介质膜上进行最终的固化过程,其中最终的固化过程包括用紫外线(UV )辐射。
    • 9. 发明授权
    • Method and device for controlling pattern and structure formation by an electric field
    • 用于通过电场控制图案和结构形成的方法和装置
    • US08916055B2
    • 2014-12-23
    • US13823690
    • 2012-07-31
    • Jozef BrckaJacques FaguetEric M. LeeHongyu Yue
    • Jozef BrckaJacques FaguetEric M. LeeHongyu Yue
    • G01R31/00H01L21/326H01L21/67B03C5/00H01J37/32C12M3/00C12M1/26B03C5/02A61F2/00H01L21/02
    • C23C16/50A61F2/00B03C5/005B03C5/026C12M3/00C12M21/08C12M33/00C23C16/04C23C16/48H01J37/32009H01J37/32697H01L21/02612H01L21/67011
    • A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out. Further, the processing medium (26) and electrical bias may be selected to prepare at least one layer on the substrate (30) for bonding the substrate (30) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.
    • 处理方法和装置使用至少一个电场施加器(34),其被偏置以产生空间 - 时间电场,以影响处理介质(26),悬浮的纳米物体(28)或基板(30)在处理中相互作用 其中介质(26)或颗粒的偶极子性质在衬底(30)上构造结构。 该装置可以包括磁场,声场,光学力或其他生成装置。 处理可能影响基底(30)上的选择性局部层,或者可以控制层中的颗粒的取向,控制介电电泳颗粒或介质的移动,或引起不同性质的悬浮颗粒遵循处理介质(26)中的不同路径。 可以进行在基板(30)上沉积或修饰层。 此外,可以选择处理介质(26)和电偏压以在衬底(30)上制备用于将衬底(30)结合到第二衬底的至少一个层,或者以受控的方向沉积碳纳米管(CNT) 在基板上。