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1. 发明申请

US20130217210A1 METHOD AND DEVICE FOR CONTROLLING PATTERN AND STRUCTURE FORMATION BY AN ELECTRIC FIELD 有权
公开(公告)号：US20130217210A1
公开(公告)日：2013-08-22
申请号：US13823690
申请日：2012-07-31
申请人： Jozef Brcka , Jacques Faguet , Eric M. Lee , Hongyu Yue
发明人： Jozef Brcka , Jacques Faguet , Eric M. Lee , Hongyu Yue
IPC分类号： H01L21/67 , H01L21/02
CPC分类号： C23C16/50 , A61F2/00 , B03C5/005 , B03C5/026 , C12M3/00 , C12M21/08 , C12M33/00 , C23C16/04 , C23C16/48 , H01J37/32009 , H01J37/32697 , H01L21/02612 , H01L21/67011
摘要： A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out. Further, the processing medium (26) and electrical bias may be selected to prepare at least one layer on the substrate (30) for bonding the substrate (30) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.

2. 发明授权

US08916055B2 Method and device for controlling pattern and structure formation by an electric field 有权
标题翻译：用于通过电场控制图案和结构形成的方法和装置
公开(公告)号：US08916055B2
公开(公告)日：2014-12-23
申请号：US13823690
申请日：2012-07-31
申请人： Jozef Brcka , Jacques Faguet , Eric M. Lee , Hongyu Yue
发明人： Jozef Brcka , Jacques Faguet , Eric M. Lee , Hongyu Yue
IPC分类号： G01R31/00 , H01L21/326 , H01L21/67 , B03C5/00 , H01J37/32 , C12M3/00 , C12M1/26 , B03C5/02 , A61F2/00 , H01L21/02
CPC分类号： C23C16/50 , A61F2/00 , B03C5/005 , B03C5/026 , C12M3/00 , C12M21/08 , C12M33/00 , C23C16/04 , C23C16/48 , H01J37/32009 , H01J37/32697 , H01L21/02612 , H01L21/67011
摘要： A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out. Further, the processing medium (26) and electrical bias may be selected to prepare at least one layer on the substrate (30) for bonding the substrate (30) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.
摘要翻译：处理方法和装置使用至少一个电场施加器（34），其被偏置以产生空间 - 时间电场，以影响处理介质（26），悬浮的纳米物体（28）或基板（30）在处理中相互作用其中介质（26）或颗粒的偶极子性质在衬底（30）上构造结构。该装置可以包括磁场，声场，光学力或其他生成装置。处理可能影响基底（30）上的选择性局部层，或者可以控制层中的颗粒的取向，控制介电电泳颗粒或介质的移动，或引起不同性质的悬浮颗粒遵循处理介质（26）中的不同路径。可以进行在基板（30）上沉积或修饰层。此外，可以选择处理介质（26）和电偏压以在衬底（30）上制备用于将衬底（30）结合到第二衬底的至少一个层，或者以受控的方向沉积碳纳米管（CNT）在基板上。

3. 发明申请

US20110244128A1 FLOW PLATE UTILIZATION IN FILAMENT ASSISTED CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译： FILAMENT辅助化学气相沉积中的流板利用
公开(公告)号：US20110244128A1
公开(公告)日：2011-10-06
申请号：US12751784
申请日：2010-03-31
申请人： Jozef Brcka , Jacques Faguet
发明人： Jozef Brcka , Jacques Faguet
IPC分类号： C23C16/44 , C23C16/00 , B23P15/00 , G06G7/50
CPC分类号： C23C16/52 , C23C16/44 , C23C16/45591 , C23C16/46 , Y10T29/49
摘要： A filament assisted chemical vapor deposition (FACVD) system. The FACVD system includes a gas distribution assembly, heater filament assembly, and a flow plate that is disposed between the gas distribution assembly and the heater filament assembly. The heater filament assembly and the flow plate have a corresponding extent across a dimension of the reactor and are separated by different distances across that extent.
摘要翻译：长丝辅助化学气相沉积（FACVD）系统。 FACVD系统包括气体分配组件，加热器丝组件和设置在气体分配组件和加热丝组件之间的流动板。加热器灯丝组件和流动板在反应器的尺寸上具有相应的范围，并且在该范围内被分开不同的距离。

4. 发明授权

US07744735B2 Ionized PVD with sequential deposition and etching 有权
标题翻译：电离PVD具有顺序沉积和蚀刻
公开(公告)号：US07744735B2
公开(公告)日：2010-06-29
申请号：US10795093
申请日：2004-03-05
申请人： Rodney Lee Robison , Jacques Faguet , Bruce Gittleman , Tugrul Yasar , Frank Cerio , Jozef Brcka
发明人： Rodney Lee Robison , Jacques Faguet , Bruce Gittleman , Tugrul Yasar , Frank Cerio , Jozef Brcka
IPC分类号： C23C14/00 , C23C14/32 , C25B11/00 , C25B13/00
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/321 , H01J37/34 , H01L21/2855 , H01L21/32131 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L21/76877
摘要： An iPVD apparatus (20) is programmed to deposit material (10) onto semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters. Pressure of more than 50 mTorr are preferred for deposition in a thermalized plasma while pressure of less than a few mTorr is preferred for etching.
摘要翻译： iPVD装置（20）被编程为通过在真空室（30）内的沉积和蚀刻模式之间循环来将材料（10）沉积到半导体衬底（21）上。至少在蚀刻模式下，静态磁场保持最小，至少小于150高斯，通常小于50高斯，优选在0-10高斯范围内。在沉积模式期间的静磁场可以大于150高斯，范围为0-50高斯，或优选为20-30高斯，并且可以与蚀刻模式相同或在沉积模式期间在较高水平之间切换，在蚀刻模式期间包括零。这种切换可以是通过切换电磁体电流或通过平移或旋转来移动永磁体。至少在蚀刻模式下，静态磁场保持最小，至少小于150高斯，通常小于50高斯，优选在1-10高斯范围内。这些模式可以在不同的功率和压力参数下工作。超过50mTorr的压力优选用于在热化等离子体中沉积，而对于蚀刻来说优选少于几mTorr的压力。

5. 发明申请

US20130192990A1 SYSTEM AND METHOD FOR TISSUE CONSTRUCTION USING AN ELECTRIC FIELD APPLICATOR 有权
标题翻译：使用电场应用器的组织结构的系统和方法
公开(公告)号：US20130192990A1
公开(公告)日：2013-08-01
申请号：US13823701
申请日：2012-07-31
申请人： Jozef Brcka
发明人： Jozef Brcka
IPC分类号： A61F2/00
CPC分类号： C23C16/50 , A61F2/00 , B03C5/005 , B03C5/026 , C12M3/00 , C12M21/08 , C12M33/00 , C23C16/04 , C23C16/48 , H01J37/32009 , H01J37/32697 , H01L21/02612 , H01L21/67011
摘要： A method and apparatus are provided for constructing tissue from cells or other objects by application of temporally and spatially controlled electric fields. Electric field applicators expose a substrate (32) to the electric field controlled to affect the processing medium (28) to achieve a processing effect on the construction of tissue on the substrate (32). Electrical bias is selected to interact with dipole properties of the medium (28) to control the movement of suspended dielectrophoretic cells or other particles in the medium (28) or at the substrate (32). The motion of suspended particles may be affected to cause suspended particles of different properties to follow different paths in the processing medium (28), which may be used to cause the suspended particles to be sorted. The processing medium (28) and electrical bias may be selected to affect the structure, or orientation, of one or more layers on the substrate (32).
摘要翻译：提供了一种用于通过应用时间和空间控制的电场从电池或其他物体构造组织的方法和装置。电场施加器将衬底（32）暴露于被控制以影响处理介质（28）的电场，以实现对衬底（32）上的组织的构造的处理效果。选择电偏压以与介质（28）的偶极子性质相互作用，以控制介质（28）或基板（32）上的悬浮介电泳细胞或其它颗粒的运动。悬浮颗粒的运动可能受到影响，导致不同性质的悬浮颗粒遵循处理介质（28）中不同的路径，可用于引起悬浮颗粒的分选。可以选择处理介质（28）和电偏压来影响衬底（32）上的一个或多个层的结构或取向。

6. 发明授权

US08092658B2 Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process 失效
标题翻译：用于保形离子刺激纳米尺度沉积工艺的分布式等离子体处理系统的方法和装置
公开(公告)号：US08092658B2
公开(公告)日：2012-01-10
申请号：US11835067
申请日：2007-08-07
申请人： Jozef Brcka
发明人： Jozef Brcka
IPC分类号： C23C14/34
CPC分类号： C23C14/046
摘要： A deposition system and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source, and a distributed metal source for forming plasma and introducing metal vapor to the deposition system, respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable. The ratio is particularly effective for plasma density exceeding 1012 cm−3, and for depositing film on substrates having nanoscale features with maximum film thickness less than half of the feature width, for example, at ten percent of the feature width.
摘要翻译：描述了一种沉积系统及其操作方法，用于使用高密度等离子体沉积具有高纵横比特征的保形金属或其它类似的响应性涂层膜。沉积系统包括等离子体源和用于形成等离子体并将金属蒸气引入沉积系统的分布金属源。沉积系统被配置为形成具有等离子体密度并产生具有金属密度的金属蒸气的等离子体，其中金属密度与靠近基底的等离子体密度之比小于或等于1。该比例应至少存在于距衬底表面约一定距离内，该衬底的表面直径约为衬底直径的百分之二十。在所述衬底的表面上基本上跨越正或负百分之二十五的均匀的比例是理想的。该比例对于超过1012cm-3的等离子体密度特别有效，并且用于在具有小于特征宽度的一半的最大膜厚度的纳米尺度特征的基底上沉积膜，例如在特征宽度的10％。

7. 发明授权

US07771562B2 Etch system with integrated inductive coupling 有权
标题翻译：具有集成电感耦合的蚀刻系统
公开(公告)号：US07771562B2
公开(公告)日：2010-08-10
申请号：US11563399
申请日：2006-11-27
申请人： Jozef Brcka
发明人： Jozef Brcka
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32174 , H01J37/321
摘要： An integrated capacitively-coupled and inductively-coupled device is provided for plasma etching that may be used as a primary or secondary source for generating a plasma to etch substrates. The device is practical for processing advanced semiconductor devices and integrated circuits that require uniform and dense plasma. The invention may be embodied in an apparatus that contains a substrate support, typically including an electrostatic chuck, that controls ion energy by capacitively coupling RF power to the plasma and generating voltage bias on the wafer relative to the plasma potential. An etching electrode is provided opposite the substrate support. An integrated inductive coupling element is provided at the perimeter of the etching electrode that increases plasma density at the perimeter of the wafer, compensating for the radial loss of charged particles toward chamber walls, to produce uniform plasma density above the processed wafer. The device has a capacitive coupling zone in its center for energizing etching ions and an inductive coupling zone at its perimeter of the wafer. Both zones together with plasma create a resonant circuit with the plasma.
摘要翻译：提供用于等离子体蚀刻的集成电容耦合和电感耦合器件，其可以用作用于产生等离子体以蚀刻衬底的初级或次级源。该器件适用于需要均匀和致密等离子体的先进半导体器件和集成电路。本发明可以体现在一种装置中，该装置包含通常包括静电卡盘的基板支架，其通过将RF功率电容耦合到等离子体并且相对于等离子体电位产生晶片上的电压偏置来控制离子能量。在衬底支撑件相对设置蚀刻电极。在蚀刻电极的周边处提供集成的电感耦合元件，其增加晶片周边处的等离子体密度，补偿带电粒子朝向室壁的径向损耗，以在处理的晶片之上产生均匀的等离子体密度。该器件在其中心具有电容耦合区，用于激励蚀刻离子和在晶片周边的感应耦合区。两个区域与等离子体一起产生与等离子体的谐振电路。

8. 发明授权

US07566477B2 Method for saturating a carrier gas with precursor vapor 失效
标题翻译：使用前体蒸气使载气饱和的方法
公开(公告)号：US07566477B2
公开(公告)日：2009-07-28
申请号：US11096156
申请日：2005-03-31
申请人： Jozef Brcka
发明人： Jozef Brcka
IPC分类号： C23C16/00 , C23C16/06
CPC分类号： C23C16/4481 , C23C16/16 , C23C16/45523
摘要： A system and method for vaporizing a solid film precursor and transporting the film precursor vapor using a precursor valve system to control delivery. The film precursor vaporization system is positioned above and coupled to the process chamber. The precursor valve system, coupled to the film precursor vaporization system, is utilized to open and close the flow of film precursor vapor from the film precursor vaporization system to the process chamber.
摘要翻译：用于蒸发固体膜前体并使用前体阀系统输送膜前体蒸气以控制输送的系统和方法。膜前体蒸发系统位于处理室上方并且耦合到处理室。耦合到膜前体蒸发系统的前体阀系统用于打开和关闭膜前体蒸气从膜前体蒸发系统到处理室的流动。

9. 发明申请

US20080081482A1 SELECTIVE-REDEPOSITION STRUCTURES FOR CALIBRATING A PLASMA PROCESS 有权
标题翻译：用于校准等离子体工艺的选择性沉积结构
公开(公告)号：US20080081482A1
公开(公告)日：2008-04-03
申请号：US11536902
申请日：2006-09-29
申请人： Jozef Brcka , Rodney L. Robison , Takashi Horiuchi
发明人： Jozef Brcka , Rodney L. Robison , Takashi Horiuchi
IPC分类号： H01L21/302 , G01C25/00 , G01F25/00
CPC分类号： H01J37/3299 , H01J37/32935 , H01L22/12 , H01L22/20
摘要： Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition structures for calibrating a plasma process. The selective-redeposition structures receive a controllable and/or measurable amount of redeposited material during the plasma process.
摘要翻译：用于校准在诸如电离物理气相沉积装置的等离子体处理装置中进行的等离子体处理的校准晶片和方法。校准晶片包括用于校准等离子体工艺的一个或多个选择性再沉积结构。选择性再沉积结构在等离子体工艺期间接收可控和/或可测量的再沉积材料。

10. 发明申请

US20070131544A1 Enhanced reliability deposition baffle for iPVD 有权
标题翻译：增强iPVD的可靠性沉积挡板
公开(公告)号：US20070131544A1
公开(公告)日：2007-06-14
申请号：US11302768
申请日：2005-12-14
申请人： Jozef Brcka , Rodney Robison
发明人： Jozef Brcka , Rodney Robison
IPC分类号： C23C14/00
CPC分类号： C23C14/358 , H01J37/321 , H01J37/32495 , H01J37/32623 , H01J37/32633
摘要： Enhanced reliability and performance stability of a deposition baffle is provided in ionized physical vapor deposition (iPVD) processing tool in which a high density plasma is coupled into a chamber from an external antenna through a dielectric window. A deposition baffle with slots protects the window. The deposition baffle has slots through it. The width of the slots at the window side of the baffle is different from the width of the slots at the plasma side of the baffle. Preferably, the ratio of width of the slots at the window side is preferably less than the width at the plasma side. The slots have sidewalls at the plasma side that are arc spray coated. The ratio of the baffle thickness to slot width, or the slot's aspect ratio, is less than 8:1, and preferably less than 6:1. The deposition baffle is spaced less than 1 mm from the window, and preferably less than 0.5 mm from the window.
摘要翻译：在电离物理气相沉积（iPVD）处理工具中提供了沉积挡板的增强的可靠性和性能稳定性，其中高密度等离子体通过电介质窗从外部天线耦合到室中。具有槽的沉积挡板保护窗户。沉积挡板具有通过其的槽。挡板窗口侧的槽宽度与挡板等离子体侧的槽宽不同。优选地，窗口侧的狭槽的宽度比优选小于等离子体侧的宽度。槽在等离子体侧具有被电弧喷涂的侧壁。挡板厚度与槽宽度的比率或槽的长宽比小于8:1，优选小于6:1。沉积挡板距离窗口间隔小于1mm，并且优选地距离窗口小于0.5mm。

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