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1. 发明申请

US20130217210A1 METHOD AND DEVICE FOR CONTROLLING PATTERN AND STRUCTURE FORMATION BY AN ELECTRIC FIELD 有权
公开(公告)号：US20130217210A1
公开(公告)日：2013-08-22
申请号：US13823690
申请日：2012-07-31
申请人： Jozef Brcka , Jacques Faguet , Eric M. Lee , Hongyu Yue
发明人： Jozef Brcka , Jacques Faguet , Eric M. Lee , Hongyu Yue
IPC分类号： H01L21/67 , H01L21/02
CPC分类号： C23C16/50 , A61F2/00 , B03C5/005 , B03C5/026 , C12M3/00 , C12M21/08 , C12M33/00 , C23C16/04 , C23C16/48 , H01J37/32009 , H01J37/32697 , H01L21/02612 , H01L21/67011
摘要： A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out. Further, the processing medium (26) and electrical bias may be selected to prepare at least one layer on the substrate (30) for bonding the substrate (30) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.

2. 发明授权

US08916055B2 Method and device for controlling pattern and structure formation by an electric field 有权
标题翻译：用于通过电场控制图案和结构形成的方法和装置
公开(公告)号：US08916055B2
公开(公告)日：2014-12-23
申请号：US13823690
申请日：2012-07-31
申请人： Jozef Brcka , Jacques Faguet , Eric M. Lee , Hongyu Yue
发明人： Jozef Brcka , Jacques Faguet , Eric M. Lee , Hongyu Yue
IPC分类号： G01R31/00 , H01L21/326 , H01L21/67 , B03C5/00 , H01J37/32 , C12M3/00 , C12M1/26 , B03C5/02 , A61F2/00 , H01L21/02
CPC分类号： C23C16/50 , A61F2/00 , B03C5/005 , B03C5/026 , C12M3/00 , C12M21/08 , C12M33/00 , C23C16/04 , C23C16/48 , H01J37/32009 , H01J37/32697 , H01L21/02612 , H01L21/67011
摘要： A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out. Further, the processing medium (26) and electrical bias may be selected to prepare at least one layer on the substrate (30) for bonding the substrate (30) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.
摘要翻译：处理方法和装置使用至少一个电场施加器（34），其被偏置以产生空间 - 时间电场，以影响处理介质（26），悬浮的纳米物体（28）或基板（30）在处理中相互作用其中介质（26）或颗粒的偶极子性质在衬底（30）上构造结构。该装置可以包括磁场，声场，光学力或其他生成装置。处理可能影响基底（30）上的选择性局部层，或者可以控制层中的颗粒的取向，控制介电电泳颗粒或介质的移动，或引起不同性质的悬浮颗粒遵循处理介质（26）中的不同路径。可以进行在基板（30）上沉积或修饰层。此外，可以选择处理介质（26）和电偏压以在衬底（30）上制备用于将衬底（30）结合到第二衬底的至少一个层，或者以受控的方向沉积碳纳米管（CNT）在基板上。

3. 发明授权

US08895942B2 Dielectric treatment module using scanning IR radiation source 有权
标题翻译：介质处理模块采用扫描红外辐射源
公开(公告)号：US08895942B2
公开(公告)日：2014-11-25
申请号：US12211640
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： H01L21/67 , B23K26/08 , B23K26/12 , C23C16/56
CPC分类号： H01L21/67115 , B23K26/082 , B23K26/12 , B23K26/127 , C23C16/56
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

4. 发明申请

US20100068897A1 DIELECTRIC TREATMENT PLATFORM FOR DIELECTRIC FILM DEPOSITION AND CURING 审中-公开
标题翻译：用于电介质膜沉积和固化的介质处理平台
公开(公告)号：US20100068897A1
公开(公告)日：2010-03-18
申请号：US12211681
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： H01L21/00 , A61N5/00
CPC分类号： H01L21/67115 , H01L21/3105
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

5. 发明申请

US20100067886A1 IR LASER OPTICS SYSTEM FOR DIELECTRIC TREATMENT MODULE 审中-公开
标题翻译：用于电介质处理模块的红外激光光学系统
公开(公告)号：US20100067886A1
公开(公告)日：2010-03-18
申请号：US12211675
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： A21B2/00
CPC分类号： H01L21/31695 , B05D1/002 , B05D3/0209 , B05D3/0263 , B05D3/067 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02271 , H01L21/02345 , H01L21/02348 , H01L21/3105
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于大约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

6. 发明申请

US20100065759A1 DIELECTRIC TREATMENT MODULE USING SCANNING IR RADIATION SOURCE 有权
标题翻译：使用扫描红外辐射源的电介质处理模块
公开(公告)号：US20100065759A1
公开(公告)日：2010-03-18
申请号：US12211640
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： A61N5/00
CPC分类号： H01L21/67115 , B23K26/082 , B23K26/12 , B23K26/127 , C23C16/56
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

7. 发明申请

US20100065758A1 DIELECTRIC MATERIAL TREATMENT SYSTEM AND METHOD OF OPERATING 审中-公开
标题翻译：电介质材料处理系统及其操作方法
公开(公告)号：US20100065758A1
公开(公告)日：2010-03-18
申请号：US12211598
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： G21K5/00
CPC分类号： H01L21/268 , H01L21/67115 , H01L21/67184 , H01L21/67207
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于大约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

8. 发明授权

US08242460B2 Ultraviolet treatment apparatus 有权
标题翻译：紫外线治疗仪
公开(公告)号：US08242460B2
公开(公告)日：2012-08-14
申请号：US13072668
申请日：2011-03-25
申请人： Hongyu Yue , Junjun Liu , Jacques Faguet , Dorel I. Toma
发明人： Hongyu Yue , Junjun Liu , Jacques Faguet , Dorel I. Toma
IPC分类号： H01J37/20
CPC分类号： H01L21/67028 , B08B7/0042 , B08B7/005 , B08B7/0057 , H01L21/67115 , Y10S430/145
摘要： A process module for treating a dielectric film and, in particular, a process module for exposing, for example, a low dielectric constant (low-k) dielectric film to ultraviolet (UV) radiation is described. The process module includes a process chamber, a substrate holder coupled to the process chamber and configured to support a substrate, and a radiation source coupled to the process chamber and configured to expose the dielectric film to electromagnetic (EM) radiation. The radiation source includes a UV source, wherein the UV source has a UV lamp, and a reflector for directing reflected UV radiation from the UV lamp to the substrate. The reflector has a dichroic reflector, and a non-absorbing reflector disposed between the UV lamp and the substrate, and configured to reflect UV radiation from the UV lamp towards the dichroic reflector, wherein the non-absorbing reflector substantially prevents direct UV radiation from the UV lamp to the substrate.
摘要翻译：描述了用于处理电介质膜的处理模块，特别是用于将例如低介电常数（低k）电介质膜暴露于紫外线（UV））辐射的处理模块。处理模块包括处理室，耦合到处理室并被配置为支撑衬底的衬底保持器，以及耦合到处理室并被配置为将电介质膜暴露于电磁（EM）辐射的辐射源。辐射源包括UV源，其中UV源具有UV灯，以及用于将来自UV灯的反射的UV辐射引导到衬底的反射器。反射器具有二向色反射器和设置在UV灯和衬底之间的非吸收反射器，并被配置为将来自UV灯的UV辐射反射到二向色反射器，其中非吸收反射器基本上防止来自UV灯的直接UV辐射紫外灯到底物。

9. 发明授权

US07213478B2 Method for automatic configuration of processing system 有权
标题翻译：自动配置处理系统的方法
公开(公告)号：US07213478B2
公开(公告)日：2007-05-08
申请号：US10776452
申请日：2004-02-12
申请人： Satoshi Harada , Edward C. Hume, III , James E Willis , Kevin Andrew Chamness , Hieu A Lam , Hongyu Yue , David Fatke
发明人： Satoshi Harada , Edward C. Hume, III , James E Willis , Kevin Andrew Chamness , Hieu A Lam , Hongyu Yue , David Fatke
IPC分类号： G01N19/00
CPC分类号： G05B19/41865 , G05B19/41845 , G05B2219/31334 , G05B2219/32191 , G05B2219/45031 , Y02P90/16 , Y02P90/185 , Y02P90/20 , Y02P90/22 , Y02P90/86
摘要： A method of automatically configuring an Advanced Process Control (APC) system for a semiconductor manufacturing environment in which an auto-configuration script is generated for executing an auto-configuration program. The auto-configuration script activates default values for input to the auto-configuration program. The auto-configuration script is executed to generate an enabled parameter file output from the auto-configuration program. The enabled parameter file identifies parameters for statistical process control (SPC) chart generation.
摘要翻译：一种自动配置用于半导体制造环境的高级过程控制（APC）系统的方法，其中生成用于执行自动配置程序的自动配置脚本。自动配置脚本激活自动配置程序输入的默认值。执行自动配置脚本以生成从自动配置程序输出的启用参数文件。启用的参数文件识别统计过程控制（SPC）图生成的参数。

10. 发明申请

US20060048891A1 Method and apparatus for determining an etch property using an endpoint signal 有权
标题翻译：使用端点信号确定蚀刻性质的方法和装置
公开(公告)号：US20060048891A1
公开(公告)日：2006-03-09
申请号：US10531469
申请日：2003-10-31
申请人： Hongyu Yue , Hieu Lam
发明人： Hongyu Yue , Hieu Lam
IPC分类号： C23F1/00 , G01L21/30
CPC分类号： H01J37/32935 , H01J37/32963
摘要： The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.
摘要翻译：本发明提出了一种用于蚀刻衬底上的层的等离子体处理系统，包括处理室，耦合到处理室并被配置为测量至少一个端点信号的诊断系统，以及耦合到诊断系统的控制器，并且被配置为确定从端点信号原位蚀刻速率和蚀刻速度均匀性中的至少一个。此外，提出了确定用于蚀刻等离子体处理系统中的衬底上的层的蚀刻性质的原位方法，包括以下步骤：提供该层的厚度; 蚀刻衬底上的层; 使用耦合到所述等离子体处理系统的诊断系统来测量至少一个端点信号，其中所述端点信号包括端点转换; 以及从所述厚度与所述端点转变期间的时间与所述蚀刻的开始时间之间的差的比率确定所述蚀刻速率。

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