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1. 发明授权

US08895942B2 Dielectric treatment module using scanning IR radiation source 有权
标题翻译：介质处理模块采用扫描红外辐射源
公开(公告)号：US08895942B2
公开(公告)日：2014-11-25
申请号：US12211640
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： H01L21/67 , B23K26/08 , B23K26/12 , C23C16/56
CPC分类号： H01L21/67115 , B23K26/082 , B23K26/12 , B23K26/127 , C23C16/56
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

2. 发明授权

US09017933B2 Method for integrating low-k dielectrics 有权
标题翻译：低k电介质的集成方法
公开(公告)号：US09017933B2
公开(公告)日：2015-04-28
申请号：US13072662
申请日：2011-03-25
申请人： Junjun Liu , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Dorel I. Toma , Hongyu Yue
IPC分类号： G03F7/40 , H01L21/67 , B08B7/00
CPC分类号： H01L21/67028 , B08B7/0042 , B08B7/005 , B08B7/0057 , H01L21/67115 , Y10S430/145
摘要： A method for treating a dielectric film on a substrate and, in particular, a method for integrating a low-k dielectric film with subsequently formed metal interconnects is described. The method includes preparing a dielectric film on a substrate, wherein the dielectric film is a low-k dielectric film having a dielectric constant less than or equal to a value of about 4. Thereafter, the method further includes performing a preliminary curing process on the dielectric film, forming a pattern in the dielectric film using a lithographic process and an etching process, removing undesired residues from the substrate, and performing a final curing process on the dielectric film, wherein the final curing process includes irradiating the substrate with ultraviolet (UV) radiation.
摘要翻译：描述了一种用于处理衬底上的电介质膜的方法，特别是用于将低k电介质膜与随后形成的金属互连集成的方法。该方法包括在基板上制备电介质膜，其中介电膜是介电常数小于或等于约4的低k电介质膜。此后，该方法还包括对电介质膜，使用光刻工艺和蚀刻工艺在电介质膜中形成图案，从衬底去除不需要的残留物，并在电介质膜上进行最终的固化过程，其中最终的固化过程包括用紫外线（UV ）辐射。

3. 发明授权

US08242460B2 Ultraviolet treatment apparatus 有权
标题翻译：紫外线治疗仪
公开(公告)号：US08242460B2
公开(公告)日：2012-08-14
申请号：US13072668
申请日：2011-03-25
申请人： Hongyu Yue , Junjun Liu , Jacques Faguet , Dorel I. Toma
发明人： Hongyu Yue , Junjun Liu , Jacques Faguet , Dorel I. Toma
IPC分类号： H01J37/20
CPC分类号： H01L21/67028 , B08B7/0042 , B08B7/005 , B08B7/0057 , H01L21/67115 , Y10S430/145
摘要： A process module for treating a dielectric film and, in particular, a process module for exposing, for example, a low dielectric constant (low-k) dielectric film to ultraviolet (UV) radiation is described. The process module includes a process chamber, a substrate holder coupled to the process chamber and configured to support a substrate, and a radiation source coupled to the process chamber and configured to expose the dielectric film to electromagnetic (EM) radiation. The radiation source includes a UV source, wherein the UV source has a UV lamp, and a reflector for directing reflected UV radiation from the UV lamp to the substrate. The reflector has a dichroic reflector, and a non-absorbing reflector disposed between the UV lamp and the substrate, and configured to reflect UV radiation from the UV lamp towards the dichroic reflector, wherein the non-absorbing reflector substantially prevents direct UV radiation from the UV lamp to the substrate.
摘要翻译：描述了用于处理电介质膜的处理模块，特别是用于将例如低介电常数（低k）电介质膜暴露于紫外线（UV））辐射的处理模块。处理模块包括处理室，耦合到处理室并被配置为支撑衬底的衬底保持器，以及耦合到处理室并被配置为将电介质膜暴露于电磁（EM）辐射的辐射源。辐射源包括UV源，其中UV源具有UV灯，以及用于将来自UV灯的反射的UV辐射引导到衬底的反射器。反射器具有二向色反射器和设置在UV灯和衬底之间的非吸收反射器，并被配置为将来自UV灯的UV辐射反射到二向色反射器，其中非吸收反射器基本上防止来自UV灯的直接UV辐射紫外灯到底物。

4. 发明申请

US20100068897A1 DIELECTRIC TREATMENT PLATFORM FOR DIELECTRIC FILM DEPOSITION AND CURING 审中-公开
标题翻译：用于电介质膜沉积和固化的介质处理平台
公开(公告)号：US20100068897A1
公开(公告)日：2010-03-18
申请号：US12211681
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： H01L21/00 , A61N5/00
CPC分类号： H01L21/67115 , H01L21/3105
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

5. 发明申请

US20100067886A1 IR LASER OPTICS SYSTEM FOR DIELECTRIC TREATMENT MODULE 审中-公开
标题翻译：用于电介质处理模块的红外激光光学系统
公开(公告)号：US20100067886A1
公开(公告)日：2010-03-18
申请号：US12211675
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： A21B2/00
CPC分类号： H01L21/31695 , B05D1/002 , B05D3/0209 , B05D3/0263 , B05D3/067 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02271 , H01L21/02345 , H01L21/02348 , H01L21/3105
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于大约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

6. 发明申请

US20100065759A1 DIELECTRIC TREATMENT MODULE USING SCANNING IR RADIATION SOURCE 有权
标题翻译：使用扫描红外辐射源的电介质处理模块
公开(公告)号：US20100065759A1
公开(公告)日：2010-03-18
申请号：US12211640
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： A61N5/00
CPC分类号： H01L21/67115 , B23K26/082 , B23K26/12 , B23K26/127 , C23C16/56
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

7. 发明申请

US20100065758A1 DIELECTRIC MATERIAL TREATMENT SYSTEM AND METHOD OF OPERATING 审中-公开
标题翻译：电介质材料处理系统及其操作方法
公开(公告)号：US20100065758A1
公开(公告)日：2010-03-18
申请号：US12211598
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： G21K5/00
CPC分类号： H01L21/268 , H01L21/67115 , H01L21/67184 , H01L21/67207
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于大约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

8. 发明授权

US07213478B2 Method for automatic configuration of processing system 有权
标题翻译：自动配置处理系统的方法
公开(公告)号：US07213478B2
公开(公告)日：2007-05-08
申请号：US10776452
申请日：2004-02-12
申请人： Satoshi Harada , Edward C. Hume, III , James E Willis , Kevin Andrew Chamness , Hieu A Lam , Hongyu Yue , David Fatke
发明人： Satoshi Harada , Edward C. Hume, III , James E Willis , Kevin Andrew Chamness , Hieu A Lam , Hongyu Yue , David Fatke
IPC分类号： G01N19/00
CPC分类号： G05B19/41865 , G05B19/41845 , G05B2219/31334 , G05B2219/32191 , G05B2219/45031 , Y02P90/16 , Y02P90/185 , Y02P90/20 , Y02P90/22 , Y02P90/86
摘要： A method of automatically configuring an Advanced Process Control (APC) system for a semiconductor manufacturing environment in which an auto-configuration script is generated for executing an auto-configuration program. The auto-configuration script activates default values for input to the auto-configuration program. The auto-configuration script is executed to generate an enabled parameter file output from the auto-configuration program. The enabled parameter file identifies parameters for statistical process control (SPC) chart generation.
摘要翻译：一种自动配置用于半导体制造环境的高级过程控制（APC）系统的方法，其中生成用于执行自动配置程序的自动配置脚本。自动配置脚本激活自动配置程序输入的默认值。执行自动配置脚本以生成从自动配置程序输出的启用参数文件。启用的参数文件识别统计过程控制（SPC）图生成的参数。

9. 发明申请

US20060048891A1 Method and apparatus for determining an etch property using an endpoint signal 有权
标题翻译：使用端点信号确定蚀刻性质的方法和装置
公开(公告)号：US20060048891A1
公开(公告)日：2006-03-09
申请号：US10531469
申请日：2003-10-31
申请人： Hongyu Yue , Hieu Lam
发明人： Hongyu Yue , Hieu Lam
IPC分类号： C23F1/00 , G01L21/30
CPC分类号： H01J37/32935 , H01J37/32963
摘要： The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.
摘要翻译：本发明提出了一种用于蚀刻衬底上的层的等离子体处理系统，包括处理室，耦合到处理室并被配置为测量至少一个端点信号的诊断系统，以及耦合到诊断系统的控制器，并且被配置为确定从端点信号原位蚀刻速率和蚀刻速度均匀性中的至少一个。此外，提出了确定用于蚀刻等离子体处理系统中的衬底上的层的蚀刻性质的原位方法，包括以下步骤：提供该层的厚度; 蚀刻衬底上的层; 使用耦合到所述等离子体处理系统的诊断系统来测量至少一个端点信号，其中所述端点信号包括端点转换; 以及从所述厚度与所述端点转变期间的时间与所述蚀刻的开始时间之间的差的比率确定所述蚀刻速率。

10. 发明申请

US20050016947A1 Method and apparatus for endpoint detection using partial least squares 有权
标题翻译：使用偏最小二乘法进行端点检测的方法和装置
公开(公告)号：US20050016947A1
公开(公告)日：2005-01-27
申请号：US10472436
申请日：2002-03-25
申请人： David Fatke , Hongyu Yue
发明人： David Fatke , Hongyu Yue
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/66 , C23F1/00
CPC分类号： H01L22/20 , H01J37/32935 , H01J37/32963 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for detection of a feature etch completion within an etching reactor. The method includes determining a correlation matrix by recording first measured data regarding a first etch process over successive time intervals to form a first recorded data matrix, assembling a first endpoint signal matrix using target endpoint data for a specific etch process, performing a partial least squares analysis on the recorded data matrix and the first endpoint signal matrix to refine the recorded data matrix, and computing a correlation matrix based upon the refined recorded data matrix and the first endpoint signal matrix. The method further includes performing a second etch process to form a second recorded data matrix. The correlation matrix and the second recorded data matrix are analyzed to determine whether an endpoint of the second etch process has been achieved.
摘要翻译：用于检测蚀刻反应器内的特征蚀刻完成的装置和方法。该方法包括通过在连续时间间隔上记录关于第一蚀刻处理的第一测量数据来形成相关矩阵以形成第一记录数据矩阵，使用用于特定蚀刻工艺的目标端点数据组装第一端点信号矩阵，执行偏最小二乘法对所记录的数据矩阵和第一端点信号矩阵进行分析以细化记录的数据矩阵，以及基于精细记录的数据矩阵和第一端点信号矩阵来计算相关矩阵。该方法还包括执行第二蚀刻工艺以形成第二记录数据矩阵。分析相关矩阵和第二记录数据矩阵以确定是否已经实现了第二蚀刻工艺的端点。

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