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1. 发明授权

US08895942B2 Dielectric treatment module using scanning IR radiation source 有权
标题翻译：介质处理模块采用扫描红外辐射源
公开(公告)号：US08895942B2
公开(公告)日：2014-11-25
申请号：US12211640
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： H01L21/67 , B23K26/08 , B23K26/12 , C23C16/56
CPC分类号： H01L21/67115 , B23K26/082 , B23K26/12 , B23K26/127 , C23C16/56
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

2. 发明授权

US08242460B2 Ultraviolet treatment apparatus 有权
标题翻译：紫外线治疗仪
公开(公告)号：US08242460B2
公开(公告)日：2012-08-14
申请号：US13072668
申请日：2011-03-25
申请人： Hongyu Yue , Junjun Liu , Jacques Faguet , Dorel I. Toma
发明人： Hongyu Yue , Junjun Liu , Jacques Faguet , Dorel I. Toma
IPC分类号： H01J37/20
CPC分类号： H01L21/67028 , B08B7/0042 , B08B7/005 , B08B7/0057 , H01L21/67115 , Y10S430/145
摘要： A process module for treating a dielectric film and, in particular, a process module for exposing, for example, a low dielectric constant (low-k) dielectric film to ultraviolet (UV) radiation is described. The process module includes a process chamber, a substrate holder coupled to the process chamber and configured to support a substrate, and a radiation source coupled to the process chamber and configured to expose the dielectric film to electromagnetic (EM) radiation. The radiation source includes a UV source, wherein the UV source has a UV lamp, and a reflector for directing reflected UV radiation from the UV lamp to the substrate. The reflector has a dichroic reflector, and a non-absorbing reflector disposed between the UV lamp and the substrate, and configured to reflect UV radiation from the UV lamp towards the dichroic reflector, wherein the non-absorbing reflector substantially prevents direct UV radiation from the UV lamp to the substrate.
摘要翻译：描述了用于处理电介质膜的处理模块，特别是用于将例如低介电常数（低k）电介质膜暴露于紫外线（UV））辐射的处理模块。处理模块包括处理室，耦合到处理室并被配置为支撑衬底的衬底保持器，以及耦合到处理室并被配置为将电介质膜暴露于电磁（EM）辐射的辐射源。辐射源包括UV源，其中UV源具有UV灯，以及用于将来自UV灯的反射的UV辐射引导到衬底的反射器。反射器具有二向色反射器和设置在UV灯和衬底之间的非吸收反射器，并被配置为将来自UV灯的UV辐射反射到二向色反射器，其中非吸收反射器基本上防止来自UV灯的直接UV辐射紫外灯到底物。

3. 发明申请

US20100068897A1 DIELECTRIC TREATMENT PLATFORM FOR DIELECTRIC FILM DEPOSITION AND CURING 审中-公开
标题翻译：用于电介质膜沉积和固化的介质处理平台
公开(公告)号：US20100068897A1
公开(公告)日：2010-03-18
申请号：US12211681
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： H01L21/00 , A61N5/00
CPC分类号： H01L21/67115 , H01L21/3105
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

4. 发明申请

US20100067886A1 IR LASER OPTICS SYSTEM FOR DIELECTRIC TREATMENT MODULE 审中-公开
标题翻译：用于电介质处理模块的红外激光光学系统
公开(公告)号：US20100067886A1
公开(公告)日：2010-03-18
申请号：US12211675
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： A21B2/00
CPC分类号： H01L21/31695 , B05D1/002 , B05D3/0209 , B05D3/0263 , B05D3/067 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02271 , H01L21/02345 , H01L21/02348 , H01L21/3105
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于大约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

5. 发明申请

US20100065759A1 DIELECTRIC TREATMENT MODULE USING SCANNING IR RADIATION SOURCE 有权
标题翻译：使用扫描红外辐射源的电介质处理模块
公开(公告)号：US20100065759A1
公开(公告)日：2010-03-18
申请号：US12211640
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： A61N5/00
CPC分类号： H01L21/67115 , B23K26/082 , B23K26/12 , B23K26/127 , C23C16/56
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

6. 发明申请

US20100065758A1 DIELECTRIC MATERIAL TREATMENT SYSTEM AND METHOD OF OPERATING 审中-公开
标题翻译：电介质材料处理系统及其操作方法
公开(公告)号：US20100065758A1
公开(公告)日：2010-03-18
申请号：US12211598
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： G21K5/00
CPC分类号： H01L21/268 , H01L21/67115 , H01L21/67184 , H01L21/67207
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于大约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

7. 发明授权

US09017933B2 Method for integrating low-k dielectrics 有权
标题翻译：低k电介质的集成方法
公开(公告)号：US09017933B2
公开(公告)日：2015-04-28
申请号：US13072662
申请日：2011-03-25
申请人： Junjun Liu , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Dorel I. Toma , Hongyu Yue
IPC分类号： G03F7/40 , H01L21/67 , B08B7/00
CPC分类号： H01L21/67028 , B08B7/0042 , B08B7/005 , B08B7/0057 , H01L21/67115 , Y10S430/145
摘要： A method for treating a dielectric film on a substrate and, in particular, a method for integrating a low-k dielectric film with subsequently formed metal interconnects is described. The method includes preparing a dielectric film on a substrate, wherein the dielectric film is a low-k dielectric film having a dielectric constant less than or equal to a value of about 4. Thereafter, the method further includes performing a preliminary curing process on the dielectric film, forming a pattern in the dielectric film using a lithographic process and an etching process, removing undesired residues from the substrate, and performing a final curing process on the dielectric film, wherein the final curing process includes irradiating the substrate with ultraviolet (UV) radiation.
摘要翻译：描述了一种用于处理衬底上的电介质膜的方法，特别是用于将低k电介质膜与随后形成的金属互连集成的方法。该方法包括在基板上制备电介质膜，其中介电膜是介电常数小于或等于约4的低k电介质膜。此后，该方法还包括对电介质膜，使用光刻工艺和蚀刻工艺在电介质膜中形成图案，从衬底去除不需要的残留物，并在电介质膜上进行最终的固化过程，其中最终的固化过程包括用紫外线（UV ）辐射。

8. 发明授权

US08444848B2 Electrochemical substrate slicing using electromagnetic wave excitation 有权
标题翻译：电化学基片切片采用电磁波激发
公开(公告)号：US08444848B2
公开(公告)日：2013-05-21
申请号：US12697985
申请日：2010-02-01
申请人： Hongyu H. Yue , Junjun Liu , Dorel I. Toma
发明人： Hongyu H. Yue , Junjun Liu , Dorel I. Toma
IPC分类号： B23H7/02 , B23H7/38
CPC分类号： C25F3/02 , C25F7/00
摘要： An apparatus for cutting a workpiece using electrochemical etching and a method of using thereof are described. The apparatus includes an electrochemical bath configured to contain an electrochemical solution, a support apparatus configured to support and immerse a workpiece in the electrochemical bath, and a non-contact cutting device configured to extend into the electrochemical bath and slice the workpiece via electrochemical etching along a cutting plane. The apparatus further includes an electromagnetic (EM) radiation source configured to illuminate a cutting surface formed between opposing sidewalls within an evolving cutting groove formed in the workpiece during slicing along the cutting plane.
摘要翻译：描述了使用电化学蚀刻来切割工件的设备及其使用方法。该设备包括配置成容纳电化学溶液的电化学浴，配置成将工件支撑并浸入电化学浴中的支撑装置，以及非接触式切割装置，其被配置成延伸到电化学浴中并通过电化学蚀刻沿切割工件切割机该装置还包括电磁（EM）辐射源，其构造成在沿着切割平面切割期间照亮形成在工件中形成的放射切割槽内的相对侧壁之间形成的切割表面。

9. 发明授权

US07977256B2 Method for removing a pore-generating material from an uncured low-k dielectric film 有权
标题翻译：从未固化的低k电介质膜去除孔隙产生材料的方法
公开(公告)号：US07977256B2
公开(公告)日：2011-07-12
申请号：US12043814
申请日：2008-03-06
申请人： Junjun Liu , Dorel I. Toma , Eric M. Lee
发明人： Junjun Liu , Dorel I. Toma , Eric M. Lee
IPC分类号： H01L21/31
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02271 , H01L21/02345 , H01L21/02348 , H01L21/3105
摘要： A method of forming a porous low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and adjusting a residual amount of cross-linking inhibitor, such as pore-generating material, within the low-k dielectric film.
摘要翻译：描述了在衬底上形成多孔低介电常数（低k）电介质膜的方法，其中低k电介质膜的介电常数小于大约4的值。该方法包括将低k 介电膜对红外（IR）辐射，并调节低k电介质膜内的残留量的交联抑制剂，如孔产生材料。

10. 发明申请

US20090226694A1 POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING 审中-公开
标题翻译：含多孔SiCOH的电介质膜及其制备方法
公开(公告)号：US20090226694A1
公开(公告)日：2009-09-10
申请号：US12043835
申请日：2008-03-06
申请人： Junjun Liu , Dorel I. Toma , Eric M. Lee
发明人： Junjun Liu , Dorel I. Toma , Eric M. Lee
IPC分类号： B32B3/26 , C08J7/06
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02203 , H01L21/02214 , H01L21/02271 , H01L21/02348 , H01L21/31695 , Y10T428/249953
摘要： A method of preparing a porous SiCOH-containing low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了在衬底上制备含多孔SiCOH的低介电常数（低k）电介质膜的方法，其中低k电介质膜的介电常数小于约4的值。该方法包括将低k电介质膜对红外（IR）辐射和紫外线（UV）辐射。

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