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1. 发明授权

US06500317B1 Plating apparatus for detecting the conductivity between plating contacts on a substrate 失效
标题翻译：用于检测基板上的电镀触点之间的导电性的电镀装置
公开(公告)号：US06500317B1
公开(公告)日：2002-12-31
申请号：US09581761
申请日：2000-06-16
申请人： Junichiro Yoshioka , Satoshi Sendai , Atsushi Chono , Mitsuo Tada , Akihisa Hongo , Yoshitaka Mukaiyama , Kenya Tomioka , Akira Ogata , Kenichi Suzuki , Naomitsu Ozawa
发明人： Junichiro Yoshioka , Satoshi Sendai , Atsushi Chono , Mitsuo Tada , Akihisa Hongo , Yoshitaka Mukaiyama , Kenya Tomioka , Akira Ogata , Kenichi Suzuki , Naomitsu Ozawa
IPC分类号： C25B904
CPC分类号： G01R31/026 , C25D21/12
摘要： The present invention provides a conductivity sensing device capable of detecting the conductivity (contact state) of the plurality of feeder contacts contacting the conductive area of the substrate, and a plating apparatus capable of forming a plating film of uniform thickness by supplying a uniform plating current through a plurality of feeder contacts.
摘要翻译：本发明提供一种电导率检测装置，其能够检测与基板的导电区域接触的多个馈电触点的导电性（接触状态），以及能够通过提供均匀电镀电流形成均匀厚度的镀膜的电镀装置通过多个馈线接触。

2. 发明授权

US06517689B1 Plating device 有权
标题翻译：电镀装置
公开(公告)号：US06517689B1
公开(公告)日：2003-02-11
申请号：US09463019
申请日：2000-01-19
申请人： Akihisa Hongo , Kenichi Suzuki , Atsushi Chono , Mitsuo Tada , Akira Ogata , Satoshi Sendai , Koji Mishima
发明人： Akihisa Hongo , Kenichi Suzuki , Atsushi Chono , Mitsuo Tada , Akira Ogata , Satoshi Sendai , Koji Mishima
IPC分类号： B23H302
CPC分类号： C25D21/12 , G01R31/026
摘要： The present invention is to provide a conduction detection device that can detect electrical conductivity (contact condition) of feeding contacts with conductive layers of a substrate. The present invention also provides an electroplating apparatus, which is able to produce uniform currents to flow through each of feeding contacts. The apparatus has a plating vessel, in which an electrode is disposed opposite to a substrate which is affixed to a plating jig electrically through a plurality of feeding contacts for applying a specific voltage between the electrode and conductive layers provided on a plating surface of the substrate. Plating current flows from the plating jig through the feeding contacts to the substrate. A conduction detection device is provided to detect electrical conductive states between the plurality of feeding contacts and the conductive layer on the substrate.
摘要翻译：本发明提供一种能够检测与基板的导体层的馈电触点的导电性（接触状态）的导电检测装置。本发明还提供了一种电镀设备，其能够产生均匀的电流以流过每个馈电触点。该装置具有电镀槽，其中电极与衬底相对设置，该衬底通过多个馈电触点电连接到电镀夹具上，用于在电极和设置在衬底的电镀表面上的导电层之间施加特定电压。电镀电流从电镀夹具通过馈电触点流到基板。提供导电检测装置以检测多个馈电触点与基板上的导电层之间的导电状态。

3. 发明授权

US06365017B1 Substrate plating device 有权
标题翻译：基板电镀装置
公开(公告)号：US06365017B1
公开(公告)日：2002-04-02
申请号：US09530805
申请日：2000-05-05
申请人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
发明人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
IPC分类号： C25D1700
CPC分类号： C25D21/14 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02
摘要： The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath. The substrate plating apparatus can also comprise an ion exchange film or neutral porous diaphragm disposed between the substrate and anode in the plating bath, wherein the ion exchange film or neutral porous diaphragm divides the plating bath into a substrate region and an anode region.
摘要翻译：本发明涉及一种用于在含有电镀液的电镀液中电镀基板的基板电镀装置。不同的阳极设置在与基底相对的电镀槽中。基板电镀装置包括与电镀槽分开设置的循环容器或虚拟容器，其中可溶性阳极和阴极设置在循环容器或假容器中。阴极交换膜或选择性阳离子交换膜设置在阳极和阴极之间，并隔离其中，其中通过在可溶性阳极和阴极之间流动电流而在循环容器或虚拟容器中产生金属离子，并且所产生的金属离子被供应到电镀浴。基板电镀装置还可以包括设置在电镀槽中的基板和阳极之间的离子交换膜或中性多孔隔膜，其中离子交换膜或中性多孔隔膜将电镀槽分成衬底区域和阳极区域。

4. 发明授权

US06793794B2 Substrate plating apparatus and method 有权
标题翻译：基板电镀装置及方法
公开(公告)号：US06793794B2
公开(公告)日：2004-09-21
申请号：US10098415
申请日：2002-03-18
申请人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
发明人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
IPC分类号： C25D500
CPC分类号： C25D21/14 , C25D7/12 , C25D17/001
摘要： The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath. The substrate plating apparatus can also comprise an ion exchange film or neutral porous diaphragm disposed between the substrate and anode in the plating bath, wherein the ion exchange film or neutral porous diaphragm divides the plating bath into a substrate region and an anode region.
摘要翻译：本发明涉及一种用于在含有电镀液的电镀液中电镀基板的基板电镀装置。不同的阳极设置在与基底相对的电镀槽中。基板电镀装置包括与电镀槽分开设置的循环容器或虚拟容器，其中可溶性阳极和阴极设置在循环容器或假容器中。阴极交换膜或选择性阳离子交换膜设置在阳极和阴极之间，并隔离其中，其中通过在可溶性阳极和阴极之间流动电流而在循环容器或虚拟容器中产生金属离子，并且所产生的金属离子被供应到电镀浴。基板电镀装置还可以包括设置在电镀槽中的基板和阳极之间的离子交换膜或中性多孔隔膜，其中离子交换膜或中性多孔隔膜将电镀槽分成衬底区域和阳极区域。

5. 发明授权

US06558518B1 Method and apparatus for plating substrate and plating facility 有权
标题翻译：电镀基板和电镀设备的方法和装置
公开(公告)号：US06558518B1
公开(公告)日：2003-05-06
申请号：US09612218
申请日：2000-07-07
申请人： Satoshi Sendai , Akihisa Hongo , Kenya Tomioka , Katsumi Tsuda , Masayuki Kumekawa , Naoaki Ogure , Kenichi Sasabe
发明人： Satoshi Sendai , Akihisa Hongo , Kenya Tomioka , Katsumi Tsuda , Masayuki Kumekawa , Naoaki Ogure , Kenichi Sasabe
IPC分类号： C25B1500
CPC分类号： C25D17/12 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/06 , H01L21/02068 , H01L21/02087 , H01L21/0209 , H01L21/67051 , H01L21/6708 , H01L21/6723 , H01L21/76883
摘要： A substrate such as a semiconductor wafer is plated to fill a metal such as copper (Cu) or the like in interconnection grooves defined in the substrate. An apparatus for plating such a substrate has a plating chamber for holding a plating solution, the plating chamber housing an anode that is immersible in the plating solution held by the plating chamber. A plating solution ejector pipe produces an upward jet of plating solution from a plating solution supplied to the plating chamber from an external source, and a substrate holder removably holds a substrate and positions the substrate such that a surface to be plated of the substrate is held in contact with the jet of plating solution. The plating chamber has a plating solution outlet defined in a bottom thereof for discharging a portion of the supplied plating solution via through-holes defined in the anode and/or around the anode out of the plating chamber.
摘要翻译：电镀衬底如半导体晶片以在衬底中限定的互连槽中填充铜（Cu）等金属。用于电镀这种基板的装置具有用于保持电镀液的电镀室，电镀室容纳浸入由电镀室保持的镀液中的阳极。电镀溶液喷射管从外部源产生从供给到电镀室的镀液的向上喷射的电镀溶液，并且衬底保持器可移除地保持衬底并定位衬底，使得保持衬底的待镀表面与电镀液接触。电镀室具有限定在其底部的电镀溶液出口，用于通过限定在阳极中和/或阳极周围的通孔从电镀室中排出一部分供应的电镀溶液。

6. 发明授权

US06582580B1 Substrate plating apparatus 有权
标题翻译：基板电镀装置
公开(公告)号：US06582580B1
公开(公告)日：2003-06-24
申请号：US09623361
申请日：2000-10-19
申请人： Akihisa Hongo , Kenichi Suzuki , Atsushi Chono
发明人： Akihisa Hongo , Kenichi Suzuki , Atsushi Chono
IPC分类号： C25D502
CPC分类号： H01L21/6723 , C25D17/001 , H01L21/2885 , H01L21/67051 , H01L21/76807 , H01L21/76877
摘要： An object of the present invention is to provide a substrate plating apparatus capable of performing continuous plating operations within one apparatus without the wafers becoming contaminated after the post-plating process by chemicals used in the plating process and the like. Further object is to provide a substrate plating apparatus capable of forming a plating film of uniform thickness on the plating surface of the wafer, while encouraging bubbles to escape from fine holes or grooves in the substrate surface and deterring particles from depositing on the plated surface. According to the present invention, there is provided a substrate plating apparatus for continuously performing a plating process and post-plating process within the same apparatus, the substrate plating apparatus comprising a contaminated zone within which the plating process is performed; a clean zone within which the post-plating process is performed; and a partition dividing the apparatus into the contaminated zone and the clean zone, wherein each zone is independently ventilated. A substrate plating apparatus for plating a surface of a substrate with a plating solution comprises a plating bath that is hermetically sealed and accommodates the substrate to be plated; and a flow path of the plating solution being formed to be parallel to the surface of the substrate.
摘要翻译：本发明的目的是提供一种能够在一个装置内进行连续电镀操作的基板电镀装置，而不会在通过电镀工艺等中使用的化学品进行后电镀处理后晶片被污染。另外的目的是提供一种能够在晶片的镀面上形成均匀厚度的镀膜的基板电镀装置，同时鼓励气泡从基板表面的细孔或凹槽中逸出，并阻止颗粒沉积在镀层表面上。根据本发明，提供一种用于在同一装置内连续进行电镀处理和电镀后处理的基板电镀装置，所述基板电镀装置包括进行电镀处理的污染区域; 执行后电镀处理的清洁区域; 以及将装置分成污染区域和清洁区域的隔板，其中每个区域都是独立通风的。一种用电镀液对基板的表面进行电镀的基板电镀装置，其特征在于，包括：电镀密封的电镀液，容纳所述电镀基板; 并且所述电镀液的流路形成为平行于所述基板的表面。

7. 发明授权

US06929722B2 Substrate plating apparatus 有权
标题翻译：基板电镀装置
公开(公告)号：US06929722B2
公开(公告)日：2005-08-16
申请号：US09945711
申请日：2001-09-05
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Norio Kimura , Fumio Kuriyama , Manabu Tsujimura , Kenichi Suzuki , Atsushi Chono
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Norio Kimura , Fumio Kuriyama , Manabu Tsujimura , Kenichi Suzuki , Atsushi Chono
IPC分类号： C25D7/12 , H01L21/00 , H01L21/288 , H01L21/768 , C25D17/00 , H01M4/29 , C23B3/00
CPC分类号： H01L21/67167 , C25D17/001 , H01L21/2885 , H01L21/67051 , H01L21/67126 , H01L21/67161 , H01L21/67173 , H01L21/6719 , H01L21/67219 , H01L21/6723 , H01L21/76849 , H01L21/76877 , Y10S134/902
摘要： A substrate plating apparatus forms an interconnection layer on an interconnection region composed of a fine groove and/or a fine hole defined in a substrate. The substrate plating apparatus includes a plating unit for forming a plated layer on a surface of the substrate including the interconnection region, a chemical mechanical polishing unit for chemically mechanically polishing the substrate to remove the plated layer from the surface of the substrate leaving a portion of the plated layer in the interconnection region, a cleaning unit for cleaning the substrate after the plated layer is formed or the substrate is chemically mechanically polished, a drying unit for drying the substrate after the substrate is cleaned, and a substrate transfer unit for transferring the substrate to and from each of the first plating unit, the first chemical mechanical polishing unit, the cleaning unit, and the drying unit. The first plating unit, the first chemical mechanical polishing unit, the cleaning unit, the drying unit, and the substrate transfer unit are combined into a unitary arrangement.
摘要翻译：基板电镀装置在由微细凹槽和/或限定在基板中的细孔构成的互连区域上形成布线层。基板电镀装置包括用于在包括互连区域的基板的表面上形成镀层的电镀单元，用于对基板进行化学机械抛光以从基板的表面移除镀层的化学机械抛光单元，互连区域中的镀层，用于在形成镀层之后对基板进行清洗或基板进行化学机械抛光的清洁单元，用于在清洁基板之后使基板干燥的干燥单元，以及用于将基板转印第一电镀单元，第一化学机械抛光单元，清洁单元和干燥单元中的每一个的基板。第一电镀单元，第一化学机械抛光单元，清洁单元，干燥单元和基板转移单元组合成一体的布置。

8. 发明授权

US06294059B1 Substrate plating apparatus 有权
标题翻译：基板电镀装置
公开(公告)号：US06294059B1
公开(公告)日：2001-09-25
申请号：US09154895
申请日：1998-09-17
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Norio Kimura , Fumio Kuriyama , Manabu Tsujimura , Kenichi Suzuki , Atsushi Chono
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Norio Kimura , Fumio Kuriyama , Manabu Tsujimura , Kenichi Suzuki , Atsushi Chono
IPC分类号： C25D1700
CPC分类号： H01L21/67167 , C25D17/001 , H01L21/2885 , H01L21/67051 , H01L21/67126 , H01L21/67161 , H01L21/67173 , H01L21/6719 , H01L21/67219 , H01L21/6723 , H01L21/76849 , H01L21/76877 , Y10S134/902
摘要： A substrate plating apparatus forms an interconnection layer on an interconnection region composed of a fine groove and/or a fine hole defined in a substrate. The substrate plating apparatus includes a plating unit for forming a plated layer on a surface of the substrate including the interconnection region, a chemical mechanical polishing unit for chemically mechanically polishing the substrate to remove the plated layer from the surface of the substrate leaving a portion of the plated layer in the interconnection region, a cleaning unit for cleaning the substrate after the plated layer is formed or the substrate is chemically mechanically polished, a drying unit for drying the substrate after the substrate is cleaned, and a substrate transfer unit for transferring the substrate to and from each of the first plating unit, the first chemical mechanical polishing unit, the cleaning unit, and the drying unit. The first plating unit, the first chemical mechanical polishing unit, the cleaning unit, the drying unit, and the substrate transfer unit are combined into a unitary arrangement.
摘要翻译：基板电镀装置在由微细凹槽和/或限定在基板中的细孔构成的互连区域上形成布线层。基板电镀装置包括用于在包括互连区域的基板的表面上形成镀层的电镀单元，用于对基板进行化学机械抛光以从基板的表面移除镀层的化学机械抛光单元，互连区域中的镀层，用于在形成镀层之后对基板进行清洗或基板进行化学机械抛光的清洁单元，用于在清洁基板之后使基板干燥的干燥单元，以及用于将基板转印第一电镀单元，第一化学机械抛光单元，清洁单元和干燥单元中的每一个的基板。第一电镀单元，第一化学机械抛光单元，清洁单元，干燥单元和基板转移单元组合成一体的布置。

9. 发明授权

US07033463B1 Substrate plating method and apparatus 失效
标题翻译：基板电镀方法及装置
公开(公告)号：US07033463B1
公开(公告)日：2006-04-25
申请号：US09762582
申请日：1999-08-11
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： C25D17/00
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.
摘要翻译：一种方法和装置，通过有效地填充形成在半导体衬底中的精细凹槽，镀覆金属而没有空隙或污染，从而形成衬底以形成布线。用电镀金属填充形成在半导体衬底中的布线凹槽的衬底的电镀包括在衬底上进行形成初始层的无电镀处理，并且进行用电镀金属填充布线凹槽的电解电镀工艺，同时初始层用作供料层。

10. 发明申请

US20060144714A1 Substrate plating method and apparatus 审中-公开
公开(公告)号：US20060144714A1
公开(公告)日：2006-07-06
申请号：US11360685
申请日：2006-02-24
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inous , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inous , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： C25D3/38
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.

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