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1. 发明申请

US20070163275A1 Supercooling apparatus and control method thereof 失效
标题翻译：过冷却装置及其控制方法
公开(公告)号：US20070163275A1
公开(公告)日：2007-07-19
申请号：US11482047
申请日：2006-07-07
申请人： Joo Ha , Jae Lee , Kyung Hahm , Hye Lee , Jeong Kim , Young Shin , Chank Lim , Won Yoon , Jung Lim , Yong Kim
发明人： Joo Ha , Jae Lee , Kyung Hahm , Hye Lee , Jeong Kim , Young Shin , Chank Lim , Won Yoon , Jung Lim , Yong Kim
IPC分类号： F25C1/00 , F25D17/04 , F25C1/22 , B67D5/62
CPC分类号： F25D31/007 , A23G9/045 , A23G9/228 , F25D29/00 , F25D2700/08
摘要： A supercooling apparatus and a control method thereof. The method controls the supercooling apparatus having a storage compartment defined therein, and includes confirming beverages in the storage compartment, obtaining a proper supercooling temperature of each beverage, and controlling the storage compartment to have the proper supercooling temperature.
摘要翻译：过冷却装置及其控制方法。该方法控制具有限定在其中的储藏室的过冷却装置，并且包括确认储藏室中的饮料，获得每种饮料的适当的过冷却温度，并且控制储藏室具有适当的过冷却温度。

2. 发明申请

US20070163290A1 Supercooling apparatus, refrigerator, and control method thereof 审中-公开
标题翻译：过冷却装置，冰箱及其控制方法
公开(公告)号：US20070163290A1
公开(公告)日：2007-07-19
申请号：US11482919
申请日：2006-07-10
申请人： Young Shin , Jae Lee , Kyung Hahm , Hye Lee , Chang Lim , Jung Lim , Joo Ha , Yong Kim , Won Yoon , Jeong Kim
发明人： Young Shin , Jae Lee , Kyung Hahm , Hye Lee , Chang Lim , Jung Lim , Joo Ha , Yong Kim , Won Yoon , Jeong Kim
IPC分类号： F25D17/04 , F25D11/02
CPC分类号： F25D17/065 , F25D17/045 , F25D17/08 , F25D25/025 , F25D31/007 , F25D2317/061 , F25D2317/0665 , F25D2400/28 , F25D2700/121
摘要： A refrigerator for storing a beverage at an optimal temperature to stably supercool the beverage and maintain the beverage in a supercooled state, and that can rapidly produce a supercooled beverage while maintaining the supercooled state of the beverage. A supercooling apparatus of the refrigerator includes a storage to which chilled air is supplied from a chilled air supply unit, a supercooling compartment positioned in the storage and refrigerated by the chilled air to indirectly refrigerate an object therein, a hole formed at one side of the supercooling compartment to allow flow of the chilled air into and from the supercooling compartment, and a damper to open or close the hole. The object is directly or indirectly refrigerated in the supercooling compartment according to user's selection by opening or closing the damper.
摘要翻译：一种用于将饮料储存在最佳温度以使饮料稳定地过冷并将饮料保持在过冷状态的冰箱，并且可以在保持饮料的过冷状态的同时快速产生过冷饮料。冰箱的过冷却装置包括从冷冻空气供应单元供应冷藏空气的储存器，位于储存器中的过冷室，由冷空气冷冻以间接地冷藏其中的物体，形成在过冷室以允许冷却空气进入过冷室和从过冷室流出，以及用于打开或关闭该孔的阻尼器。根据用户的选择，通过打开或关闭阻尼器，物体直接或间接地冷冻在过冷室中。

3. 发明申请

US20050263783A1 Nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20050263783A1
公开(公告)日：2005-12-01
申请号：US10944745
申请日：2004-09-21
申请人： Jae Lee , Yong Kim , Je Kim
发明人： Jae Lee , Yong Kim , Je Kim
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： The present invention provides a nitride semiconductor light-emitting device comprising a first conductive nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer, and having at least one quantum well layer and at least one quantum barrier layer alternatively laminated; and a second conductive nitride semiconductor layer formed on the active layer, wherein at least one of the quantum well layer and quantum barrier layer in the active layer is doped with elemental Al in a concentration of less than 1%.
摘要翻译：本发明提供了一种氮化物半导体发光器件，其包括第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上并且具有至少一个量子阱层和至少一个量子势垒层交替叠层的有源层; 以及形成在有源层上的第二导电氮化物半导体层，其中有源层中的量子阱层和量子势垒层中的至少一个掺杂有浓度小于1％的元素Al。

4. 发明申请

US20060225644A1 Vertical group III-nitride light emitting device and method for manufacturing the same 审中-公开
标题翻译：垂直III族氮化物发光器件及其制造方法
公开(公告)号：US20060225644A1
公开(公告)日：2006-10-12
申请号：US11398713
申请日：2006-04-06
申请人： Jae Lee , Yong Kim , Hyung Back , Moon Kong , Dong Kim
发明人： Jae Lee , Yong Kim , Hyung Back , Moon Kong , Dong Kim
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/32
摘要： A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.
摘要翻译：提供了垂直III族氮化物发光器件及其制造方法。发光器件包括：导电衬底; 层叠在导电性基板上的p型覆层; 堆叠在p型覆盖层上的有源层; 层叠在有源层上的n掺杂的Al x Ga y In 1 N x N y N n层; 堆叠在n掺杂层上的未掺杂的GaN层; 以及形成在未掺杂的GaN层上的n电极。未掺杂的GaN层在其顶表面上形成粗糙图案。

5. 发明申请

US20060000818A1 Surface treatment agent for welding wire and welding wire surface-treated with the same 审中-公开
标题翻译：表面处理剂用于焊丝和焊丝的表面处理
公开(公告)号：US20060000818A1
公开(公告)日：2006-01-05
申请号：US10973803
申请日：2004-10-25
申请人： Yong Kim , Jae Lee , Hwan Bang
发明人： Yong Kim , Jae Lee , Hwan Bang
IPC分类号： B23K35/22
CPC分类号： B23K35/40 , B23K35/0261
摘要： Disclosed herein is a surface treatment oil for treating the surface of a welding wire. The surface treatment oil comprises at least one alkali metal compound and/or an alkaline earth metal compound, a Zn compound, and a hydrocarbon compound wherein the hydrocarbon compound contains at least two functional groups selected from the group consisting of ester, carboxylic acid, alkane and sulfonic acid groups. Further disclosed is a welding wire surface treated with the surface treatment oil. The surface treatment oil can provide good rust resistance, wear resistance, arc stability and wire feedability to a welding wire when being applied to the surface of the welding wire.
摘要翻译：本文公开了一种用于处理焊丝表面的表面处理油。表面处理油包含至少一种碱金属化合物和/或碱土金属化合物，Zn化合物和烃化合物，其中烃化合物含有至少两种选自酯，羧酸，烷烃的官能团和磺酸基。还公开了用表面处理油处理的焊丝表面。当施加到焊丝表面时，表面处理油可以提供良好的防锈性，耐磨性，电弧稳定性和对焊丝的焊丝进给能力。

6. 发明申请

US20060217518A1 Aromatic polyether resins crosslinked by amic acid or imide side chain 有权
标题翻译：通过酰胺酸或酰亚胺侧链交联的芳香族聚醚树脂
公开(公告)号：US20060217518A1
公开(公告)日：2006-09-28
申请号：US11352885
申请日：2006-02-13
申请人： Jong Won , Yong Kim , Eun Lee , Jae Lee
发明人： Jong Won , Yong Kim , Eun Lee , Jae Lee
IPC分类号： C08G8/02
CPC分类号： C08L71/10 , C08G65/4031 , C08G75/20 , C08L81/06
摘要： The present invention relates to aromatic polyether resins crosslinked with amic acid or imide side chain, and more particularly, to the aromatic polyether resin crosslinked by amic acid or imide side chain, which is produced by heat curing of amic acid, wherein introduction of imide groups to the basic backbone provides excellent chemical resistance as well as heat resistance and improves surface roughness when coated as a thin film so that it can be suitable for films and flexible display plate substrate.
摘要翻译：本发明涉及用酰胺酸或酰亚胺侧链交联的芳族聚醚树脂，更具体地说，涉及通过酰胺酸热固化生产的酰胺酸或酰亚胺侧链交联的芳香族聚醚树脂，其中引入酰亚胺基到基本骨架提供优异的耐化学性以及耐热性，并且当涂覆为薄膜时改善表面粗糙度，使得其可适用于膜和柔性显示板基材。

7. 发明申请

US20060033113A1 Nitride semiconductor light emitting diode and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体发光二极管及其制造方法
公开(公告)号：US20060033113A1
公开(公告)日：2006-02-16
申请号：US11064968
申请日：2005-02-25
申请人： Jae Lee , In Kim , Yong Kim , Hyun Kim , Moon Kong
发明人： Jae Lee , In Kim , Yong Kim , Hyun Kim , Moon Kong
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/32 , H01L33/405 , H01L33/46
摘要： The present invention provides a flip chip-type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.
摘要翻译：本发明提供一种倒装芯片型氮化物半导体发光二极管。氮化物半导体发光二极管包括透光性基板，n型氮化物半导体层，有源层，p型氮化物半导体层和网状DBR反射层。网状DBR反射层具有多个开放区域。网状DBR反射层由具有不同Al含量的第一和第二氮化物层组成。第一和第二氮化物层交替堆叠几次以形成网状DBR反射层。在网状DBR反射层和p型氮化物半导体层上形成欧姆接触层。

8. 发明申请

US20050221521A1 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20050221521A1
公开(公告)日：2005-10-06
申请号：US10983637
申请日：2004-11-09
申请人： Jae Lee , Jeong Lee , Hyun Kim , Yong Kim
发明人： Jae Lee , Jeong Lee , Hyun Kim , Yong Kim
IPC分类号： H01L21/00 , H01L29/22 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/62 , H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/22 , Y10S257/918
摘要： Disclosed herein is a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure wherein the patterns are capable of changing light inclination at the upper and lower surfaces of the substrate to decrease total reflection at the interfaces, thereby improving light emitting efficiency. The nitride semiconductor light emitting device comprises a substrate having upper and lower surfaces on which predetermined patterns are formed such that light can be incident within a critical angle, the substrate allowing a gallium nitride-based semiconductor material to be grown thereon, an n-type nitride semiconductor layer formed on the upper surface of the substrate, an active layer formed on the upper surface of the n-type nitride semiconductor layer such that the n-type nitride semiconductor layer is partially exposed, a p-type nitride semiconductor layer formed on the upper surface of the active layer, a p-electrode formed on the upper surface of the p-type nitride semiconductor layer, and an n-side electrode formed on the partially exposed n-type nitride semiconductor layer.
摘要翻译：本文公开了一种氮化物半导体发光器件，其具有形成在衬底的上表面和下表面上的图案，其中以倒装芯片接合结构发射光，其中图案能够改变衬底的上表面和下表面处的光倾斜度以减少界面处的全反射，从而提高发光效率。氮化物半导体发光器件包括具有上表面和下表面的衬底，在衬底上形成预定图案，使得光可以临界角入射，所述衬底允许在其上生长氮化镓基半导体材料，n型形成在所述衬底的上表面上的氮化物半导体层，形成在所述n型氮化物半导体层的上表面上以使得所述n型氮化物半导体层部分暴露的有源层，形成在所述n型氮化物半导体层上的p型氮化物半导体层有源层的上表面，形成在p型氮化物半导体层的上表面上的p电极和形成在部分暴露的n型氮化物半导体层上的n侧电极。

9. 发明申请

US20060234408A1 Method for manufacturing vertical group III-nitride light emitting device 有权
标题翻译：垂直III族氮化物发光器件的制造方法
公开(公告)号：US20060234408A1
公开(公告)日：2006-10-19
申请号：US11401329
申请日：2006-04-11
申请人： Jae Lee , Yong Kim , Hyung Back , Moon Kong , Dong Kim
发明人： Jae Lee , Yong Kim , Hyung Back , Moon Kong , Dong Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/20 , H01L33/405 , H01L2933/0083
摘要： The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.
摘要翻译：本发明提供一种提高外部提取效率的垂直III族氮化物发光器件及其制造方法。该方法包括在碱性衬底上形成未掺杂的GaN层和绝缘层。然后，绝缘层被选择性地蚀刻以形成绝缘图案，并且n掺杂的Al x（1-xy） N层，有源层和p掺杂的Al N n N n层（1-mn）N层依次形成在绝缘层模式。导电衬底形成在p掺杂的Al（n-n）N层上。去除基本衬底，未掺杂的GaN层和绝缘图案，并且在n掺杂的Al x Ga y y y的暴露表面的一部分上形成n电极，（1-xy）N层。

10. 发明申请

US20060192206A1 Flip-chip type nitride semiconductor light emitting diode 失效
标题翻译：倒装型氮化物半导体发光二极管
公开(公告)号：US20060192206A1
公开(公告)日：2006-08-31
申请号：US11150288
申请日：2005-06-13
申请人： Moon Kong , Yong Kim , Jae Lee , Hyung Back
发明人： Moon Kong , Yong Kim , Jae Lee , Hyung Back
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Disclosed herein is a flip-chip type nitride semiconductor light emitting diode. The light emitting diode comprises an n-type nitride semiconductor layer formed on a transparent substrate and having a substantially rectangular upper surface, an n-side electrode which comprises at least one bonding pad adjacent to at least one corner of the upper surface of the n-type nitride semiconductor layer, extended electrodes formed in a band from the bonding pad along four sides of the upper surface of the n-type nitride semiconductor layer and one or more fingers extended in a diagonal direction of the upper surface from the bonding pad and/or the extended electrodes, an active layer and a p-type nitride semiconductor layer sequentially stacked on a region of the n-type nitride semiconductor layer where the n-side electrode is not formed, and a highly reflective ohmic contact layer formed on the p-type nitride semiconductor layer.
摘要翻译：本文公开了倒装芯片型氮化物半导体发光二极管。发光二极管包括形成在透明基板上并具有基本上矩形的上表面的n型氮化物半导体层，n侧电极包括与n的上表面的至少一个角相邻的至少一个焊盘型氮化物半导体层，从接合焊盘沿着n型氮化物半导体层的上表面的四边形成的带状的延伸电极和从接合焊盘沿上表面的对角线方向延伸的一个或多个指状物，或者在n型氮化物半导体层的未形成n侧电极的区域上依次堆叠的延伸电极，有源层和p型氮化物半导体层以及形成在该n型氮化物半导体层上的高反射欧姆接触层 p型氮化物半导体层。

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