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    • 1. 发明申请
    • Nitride semiconductor light emitting device and method of manufacturing the same
    • 氮化物半导体发光器件及其制造方法
    • US20050221521A1
    • 2005-10-06
    • US10983637
    • 2004-11-09
    • Jae LeeJeong LeeHyun KimYong Kim
    • Jae LeeJeong LeeHyun KimYong Kim
    • H01L21/00H01L29/22H01L33/22H01L33/32H01L33/38H01L33/62H01L33/00
    • H01L33/32H01L33/007H01L33/22Y10S257/918
    • Disclosed herein is a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure wherein the patterns are capable of changing light inclination at the upper and lower surfaces of the substrate to decrease total reflection at the interfaces, thereby improving light emitting efficiency. The nitride semiconductor light emitting device comprises a substrate having upper and lower surfaces on which predetermined patterns are formed such that light can be incident within a critical angle, the substrate allowing a gallium nitride-based semiconductor material to be grown thereon, an n-type nitride semiconductor layer formed on the upper surface of the substrate, an active layer formed on the upper surface of the n-type nitride semiconductor layer such that the n-type nitride semiconductor layer is partially exposed, a p-type nitride semiconductor layer formed on the upper surface of the active layer, a p-electrode formed on the upper surface of the p-type nitride semiconductor layer, and an n-side electrode formed on the partially exposed n-type nitride semiconductor layer.
    • 本文公开了一种氮化物半导体发光器件,其具有形成在衬底的上表面和下表面上的图案,其中以倒装芯片接合结构发射光,其中图案能够改变衬底的上表面和下表面处的光倾斜度 以减少界面处的全反射,从而提高发光效率。 氮化物半导体发光器件包括具有上表面和下表面的衬底,在衬底上形成预定图案,使得光可以临界角入射,所述衬底允许在其上生长氮化镓基半导体材料,n型 形成在所述衬底的上表面上的氮化物半导体层,形成在所述n型氮化物半导体层的上表面上以使得所述n型氮化物半导体层部分暴露的有源层,形成在所述n型氮化物半导体层上的p型氮化物半导体层 有源层的上表面,形成在p型氮化物半导体层的上表面上的p电极和形成在部分暴露的n型氮化物半导体层上的n侧电极。
    • 9. 发明申请
    • User interface design and evaluation system and hand interaction based user interface design and evaluation system
    • 用户界面设计和评估系统以及基于手动交互的用户界面设计和评估系统
    • US20060199167A1
    • 2006-09-07
    • US11293965
    • 2005-12-05
    • Ung YangYong KimWook SonHyun Kim
    • Ung YangYong KimWook SonHyun Kim
    • G09B25/00
    • G06F17/5009
    • A user interface design and evaluation system and a hand-interaction-based user interface design and evaluation system are provided. The user interface design and evaluation system includes: a user interface design unit, a human model interaction design unit, a user interface prototype simulation unit, a human model simulation unit, and a user interface evaluation unit. In order to develop a user interface in consideration of usability of a user, the system provides a usability evaluation feedback system performing optimization of an interface design based on a motion simulation of a body model and user interface model. Through this, an optimum interface design is derived and by reducing the initial usage difficulty of the new interface for a user, the user can easily use the new interface and work performance of the user can be enhanced. In addition, by supporting fast prototyping and evaluation in a new product development stage, efficient production of a product having a short life cycle can be actively implemented.
    • 提供了用户界面设计和评估系统以及基于手工交互的用户界面设计和评估系统。 用户界面设计和评估系统包括:用户界面设计单元,人体模型交互设计单元,用户界面原型模拟单元,人机模拟单元和用户界面评估单元。 为了开发用户界面,考虑到用户的可用性,系统提供了基于体模型和用户界面模型的运动模拟来执行接口设计优化的可用性评估反馈系统。 通过这种方式,推出了最佳的界面设计,通过减少用户新界面的初始使用难度,用户可以轻松使用新界面,可以提高用户的工作性能。 此外,通过在新产品开发阶段支持快速原型设计和评估,可以积极实施生命周期短的产品的高效生产。
    • 10. 发明申请
    • Vertical type nitride semiconductor light emitting diode
    • 垂直型氮化物半导体发光二极管
    • US20060202227A1
    • 2006-09-14
    • US11153500
    • 2005-06-16
    • Dong KimYong KimHyun Kim
    • Dong KimYong KimHyun Kim
    • H01L33/00
    • H01L33/38H01L33/32H01L33/42
    • Disclosed herein is a vertical type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises an n-type nitride semiconductor layer, an active layer formed under the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed under the active layer, and an n-side electrode which comprises a bonding pad formed adjacent to an edge of an upper surface of the n-type nitride semiconductor layer and at least one extended electrode formed in a band from the bonding pad. The bonding pad of the n-side electrode is formed adjacent to the edge of the upper surface of the n-type nitride semiconductor layer acting as a light emitting surface, thereby preventing a wire from shielding light emitted from the active layer. The extended electrode can be formed in various shapes, and prevents concentration of current density, thereby ensuring effective distribution of the current density.
    • 本文公开了垂直型氮化物半导体发光二极管。 氮化物半导体发光二极管包括n型氮化物半导体层,在n型氮化物半导体层下面形成的有源层,在有源层下面形成的p型氮化物半导体层和n侧电极, 形成在与n型氮化物半导体层的上表面的边缘相邻的接合焊盘和从接合焊盘形成为带状的至少一个延伸电极。 n侧电极的接合焊盘与作为发光面的n型氮化物半导体层的上表面的边缘相邻地形成,从而防止电线屏蔽从有源层发射的光。 扩展电极可以形成为各种形状,并且防止电流密度的集中,从而确保电流密度的有效分布。