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    • 3. 发明申请
    • Flip-chip type nitride semiconductor light emitting diode
    • 倒装型氮化物半导体发光二极管
    • US20060192206A1
    • 2006-08-31
    • US11150288
    • 2005-06-13
    • Moon KongYong KimJae LeeHyung Back
    • Moon KongYong KimJae LeeHyung Back
    • H01L33/00
    • H01L33/38H01L33/08H01L33/20H01L33/405H01L2224/0554H01L2224/05568H01L2224/05573H01L2224/16225H01L2924/00014H01L2224/05599H01L2224/0555H01L2224/0556
    • Disclosed herein is a flip-chip type nitride semiconductor light emitting diode. The light emitting diode comprises an n-type nitride semiconductor layer formed on a transparent substrate and having a substantially rectangular upper surface, an n-side electrode which comprises at least one bonding pad adjacent to at least one corner of the upper surface of the n-type nitride semiconductor layer, extended electrodes formed in a band from the bonding pad along four sides of the upper surface of the n-type nitride semiconductor layer and one or more fingers extended in a diagonal direction of the upper surface from the bonding pad and/or the extended electrodes, an active layer and a p-type nitride semiconductor layer sequentially stacked on a region of the n-type nitride semiconductor layer where the n-side electrode is not formed, and a highly reflective ohmic contact layer formed on the p-type nitride semiconductor layer.
    • 本文公开了倒装芯片型氮化物半导体发光二极管。 发光二极管包括形成在透明基板上并具有基本上矩形的上表面的n型氮化物半导体层,n侧电极包括与n的上表面的至少一个角相邻的至少一个焊盘 型氮化物半导体层,从接合焊盘沿着n型氮化物半导体层的上表面的四边形成的带状的延伸电极和从接合焊盘沿上表面的对角线方向延伸的一个或多个指状物, 或者在n型氮化物半导体层的未形成n侧电极的区域上依次堆叠的延伸电极,有源层和p型氮化物半导体层以及形成在该n型氮化物半导体层上的高反射欧姆接触层 p型氮化物半导体层。
    • 4. 发明申请
    • Nitride semiconductor light emitting device and method of manufacturing the same
    • 氮化物半导体发光器件及其制造方法
    • US20060249736A1
    • 2006-11-09
    • US11414371
    • 2006-05-01
    • Jae LeeHyung BackMoon Kong
    • Jae LeeHyung BackMoon Kong
    • H01L33/00
    • H01L33/14H01L33/32H01L33/405
    • The present invention relates to a nitride semiconductor light emitting device. The nitride semiconductor light emitting device includes an n-type electrode; an n-type nitride semiconductor layer that is formed to come in contact with the n-type electrode; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the active layer; an undoped GaN layer that is formed on the p-type nitride semiconductor layer; an AlGaN layer that is formed on the undoped GaN layer so as to provide a two-dimensional electron gas layer to the interface with the undoped GaN layer; a reflecting layer that is formed on the AlGaN layer; a barrier that is formed so as to surround the reflecting layer; and a p-type electrode that is formed on the barrier.
    • 本发明涉及一种氮化物半导体发光器件。 氮化物半导体发光器件包括n型电极; 形成为与n型电极接触的n型氮化物半导体层; 形成在n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 在p型氮化物半导体层上形成的未掺杂的GaN层; AlGaN层,形成在未掺杂的GaN层上,以便在与未掺杂的GaN层的界面上提供二维电子气层; 形成在AlGaN层上的反射层; 形成为围绕反射层的障碍物; 以及形成在屏障上的p型电极。