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1. 发明授权

US4311534A Reducing the reverse recovery charge of thyristors by nuclear irradiation 失效
标题翻译：通过核辐射降低晶闸管的反向恢复电荷
公开(公告)号：US4311534A
公开(公告)日：1982-01-19
申请号：US163548
申请日：1980-06-27
申请人： John Bartko , Krishan S. Tarneja , Chang K. Chu , Earl S. Schlegel
发明人： John Bartko , Krishan S. Tarneja , Chang K. Chu , Earl S. Schlegel
IPC分类号： H01L21/322 , H01L21/263 , H01L29/167 , H01L29/74 , H01L7/54
CPC分类号： H01L29/167 , H01L21/263 , Y10S148/084
摘要： A method of reducing the reverse recovery charge of thyristors without substantially increasing forward voltage drop by first determining the depth of the anode PN junction from a major surface adjoining a cathode emitter region. The depth of maximum defect generation in thyristor on irradiation through the major surface with a given radiation source radiating particles with molecular weight greater than one, preferably proton or alpha particles, and adjusting the energy level at the major surface of the thyristor from the radiation source to provide the depth of maximum defect generation adjacent the anode PN junction and preferably in the anode base region within 20 micrometers of the anode PN junction or in the anode emitter region within 15 micrometers of the anode PN junction. Thereafter the thyristor is irradiated through said major surface with the adjusted energy level from the radiation source to a given dosage to reduce the reverse recovery stored charge of the thyristor without substantially increasing the forward voltage drop.
摘要翻译：一种减少晶闸管的反向恢复电荷的方法，而不会通过首先确定来自邻接阴极发射极区的主表面的阳极PN结的深度而基本上增加正向压降。通过具有给定辐射源的主表面照射的晶闸管中的最大缺陷产生的深度辐射分子量大于1的颗粒，优选质子或α粒子，并且从辐射源调节晶闸管的主表面处的能级以提供邻近阳极PN结的最佳缺陷产生的深度，优选在阳极PN结的20微米内的阳极基极区域或阳极PN结的15微米内的阳极发射极区域中提供最大缺陷产生的深度。此后，晶闸管通过所述主表面照射具有从辐射源到给定剂量的调节能级，以减少晶闸管的反向恢复存储电荷，而不会基本上增加正向压降。

2. 发明授权

US4240844A Reducing the switching time of semiconductor devices by neutron irradiation 失效
标题翻译：通过中子照射降低半导体器件的开关时间
公开(公告)号：US4240844A
公开(公告)日：1980-12-23
申请号：US972302
申请日：1978-12-22
申请人： Patrick E. Felice , John Bartko , Krishan S. Tarneja , Chang K. Chu
发明人： Patrick E. Felice , John Bartko , Krishan S. Tarneja , Chang K. Chu
IPC分类号： H01L21/322 , H01L21/263 , H01L21/26
CPC分类号： H01L21/263 , Y10S148/165
摘要： The switching time of certain semiconductor devices is decreased while maintaining other electrical characteristics of the devices by irradiating them with a neutron radiation source of greater than 1.0 Mev. to a dosage between 1.times.10.sup.11 and 1.times.10.sup.15 neutrons per square centimeter. The irradiation is preferably to a dosage between 1.times.10.sup.1 and 1.times.10.sup.14 neutrons per square centimeter and preferably has substantial energy greater than 14 Mev. The devices are also annealed during and/or subsequent to the irradiation at a temperature higher than the highest specified temperature and preferably at least 50.degree. C. higher than the highest specified temperature.
摘要翻译：某些半导体器件的切换时间减少，同时通过用大于1.0Mev的中子辐射源照射器件来保持器件的其它电气特性。至1x1011至1×10 15个中子每平方厘米的剂量。照射优选为每平方厘米1×101-1×1014个中子之间的剂量，并且优选具有大于14Mev的实质能量。在高于最高规定温度且优选高于最高规定温度的至少50℃的温度下，在照射期间和/或之后也将器件退火。

3. 发明授权

US4075037A Tailoring of recovery charge in power diodes and thyristors by irradiation 失效
标题翻译：通过照射调整功率二极管和晶闸管的恢复电荷
公开(公告)号：US4075037A
公开(公告)日：1978-02-21
申请号：US687278
申请日：1976-05-17
申请人： Krishan S. Tarneja , Joseph E. Johnson , John Bartko
发明人： Krishan S. Tarneja , Joseph E. Johnson , John Bartko
IPC分类号： H01L29/74 , H01L21/263 , H01L21/322 , H01L29/32 , H01L29/861
CPC分类号： H01L29/32 , H01L21/263 , H01L29/861
摘要： The recovery charge of power diodes and thyristors is tailored and matched by irradiation through a major surface of the semiconductor body with a given radiation source, preferably of electron radiation, to a dosage corresponding to between about 1 .times. 10.sup.12 and 8 .times. 10.sup.12 electrons per centimeter square with 2 MeV electron radiation. Preferably, the recovery charge of each device of a group of a type of diode or thyristor is first measured, and the group divided into subgroups according to the measured recovery charge of each device. The devices of at least one subgroup is then irradiated with said given radiation source to dosages corresponding to between about 1 .times. 10.sup.12 and 8 .times. 10.sup.12 electrons per centimeter square with 2 MeV electron radiation, and the recovery charge of each irradiated device is again measured to determine the incremental change of recovery charge as a function of irradiation dosage. A recovery charge of another device of said type of diode or thyristor is then measured, and the device irradiated with said radiation source to a determined dosage corresponding to a desired incremental change in recovery charge to tailor the recovery charge of said device to a desired value.
摘要翻译：功率二极管和晶闸管的恢复电荷通过辐射通过半导体本体的主表面与给定的辐射源（优选电子辐射）照射到相当于约1×10 12和8×10 12电子/厘米 2 MeV电子辐射。优选地，首先测量一组二极管或晶闸管的每个器件的恢复电荷，并且根据每个器件的测量的恢复电荷将该组划分成子组。然后至少一个亚组的装置用所述给定的辐射源用2MeV电子辐射照射到相当于每平方厘米约1×10 12和8×10 12个电子之间的剂量，并且再次测量每个照射装置的恢复电荷确定作为照射剂量的函数的恢复电荷的增量变化。然后测量所述类型的二极管或晶闸管的另一装置的恢复电荷，并且将用所述辐射源照射的装置与对应于恢复电荷的期望增量变化的确定剂量相结合，以将所述装置的恢复电荷定制到期望值。

4. 发明授权

US3933527A Fine tuning power diodes with irradiation 失效
标题翻译：微调功率二极管与照射
公开(公告)号：US3933527A
公开(公告)日：1976-01-20
申请号：US339699
申请日：1973-03-09
申请人： Krishan S. Tarneja , John Bartko , Joseph E. Johnson
发明人： Krishan S. Tarneja , John Bartko , Joseph E. Johnson
IPC分类号： H01L21/00 , H01L21/263
CPC分类号： H01L21/263 , H01L21/00
摘要： Diodes of a particular type are fine tuned with irradiation to optimize the reverse recovery time while minimizing forward voltage drop and providing more uniform electrical characteristics. The initial and desired minority carrier lifetimes in the anode region of the type are determined as a function of forward voltage drop and reverse recovery time, and the minority carrier radiation damage factor is determined for a desired type of diode and radiation source. The radiation dosage to achieve the desired carrier lifetime with the radiation source is thereafter determined from the function 1/.tau. = 1/.tau..sub.o + K.phi., where .tau. is the desired minority carrier lifetime, .tau..sub.o is the initial minority carrier lifetime, K is the determined minority carrier radiation damage factor and .phi. is the radiation dosage. A major surface and preferably the major surface adjoining the anode region of the diodes is then irradiated with the radiation source to the determined radiation dosage. Preferably, the radiation dosage is between about 1 .times. 10.sup.12 and 5 .times. 10.sup.13 e/cm.sup.2, with electron radiation of intensity between 1 and 3 Mev.
摘要翻译：特定类型的二极管通过照射进行微调，以优化反向恢复时间，同时最小化正向压降并提供更均匀的电气特性。确定该类型的阳极区域中的初始和期望的少数载流子寿命作为正向压降和反向恢复时间的函数，并且为所需类型的二极管和辐射源确定少数载流子辐射损伤因子。此后，根据功能1 / tau = 1 / tau o + K phi确定达到期望的载流子寿命的辐射剂量，其中τ是期望的少数载流子寿命，τo是初始少数载流子寿命，K 是确定的少数载体辐射损伤因子，phi是辐射剂量。然后将主表面和优选地邻接二极管的阳极区域的主表面用辐射源照射到确定的辐射剂量。优选地，辐射剂量在约1×10 12和5×10 13 e / cm 2之间，电子辐射强度在1和3Mev之间。

5. 发明授权

US4278475A Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation 失效
标题翻译：通过核辐射在诸如半导体物质的材料中形成轮廓照射区域
公开(公告)号：US4278475A
公开(公告)日：1981-07-14
申请号：US936
申请日：1979-01-04
申请人： John Bartko , Earl S. Schlegel
发明人： John Bartko , Earl S. Schlegel
IPC分类号： H01L21/322 , H01L21/263 , H01L29/32 , H01L7/54 , H01L21/22
CPC分类号： H01L21/263 , H01L29/32 , Y10S438/961
摘要： Irradiated regions are formed in materials such as semiconductor bodies by nuclear radiation where the irradiated regions are of a desired thickness, dosage and dosage gradient, a desired distance from a selected surface of the material. A nuclear radiation beam from a given radiation source radiating particles with molecular weight of at least one (1) is provided that can penetrate the material through a selected surface to a depth greater than the maximum depth of the irradiated region from the selected surface. A beam modifier is formed of a given material and non-uniform shape to modify the energy of the radiation beam on transmission therethrough to form a transmitted radiation beam capable of forming an irradiated region of a desired thickness and dosage gradient in the material a given distance from the selected surface on irradiation of the material through the selected surface with the transmitted radiation beam. The material in which the desired irradiated region is to be formed is positioned with the selected surface thereof to be exposed to the radiation beam from the radiation source on transmission through the beam modifier. The material is thereafter irradiated through the beam modifier and through the selected surface with the radiation beam, preferably while the beam modifier and material are moved relative to each other through a predetermined motion, to form in the material an irradiated region of desired thickness, dosage and dosage gradient, a desired distance from the selected surface. The irradiated region thus formed in semiconductor bodies are particularly of value in changing the electrical characteristics without substantial change of other electrical characteristics.
摘要翻译：照射区域通过核辐射在诸如半导体物质的材料中形成，其中照射区域具有期望的厚度，剂量和剂量梯度，与材料的选定表面的期望距离。提供了辐射分子量为至少一个（1）的分子量的给定辐射源的核辐射束，其能够穿过选定表面的深度大于被选择表面的照射区域的最大深度的深度。光束修改器由给定的材料和不均匀的形状形成，以改变辐射束在其中穿过其中的能量，以形成能够在材料中形成给定距离的期望厚度和剂量梯度的辐射区域的透射辐射束通过所述透射的辐射束通过所选择的表面照射材料从所选择的表面。将要形成所需照射区域的材料定位成使其选择的表面暴露于通过光束改性剂透射时来自辐射源的辐射束。然后，材料通过光束调节剂并通过所选择的表面用辐射束照射，优选地，当光束调节剂和材料通过预定的运动相对于彼此移动时，在材料中形成所需厚度的照射区域，剂量和剂量梯度，与所选表面的期望距离。由此形成在半导体本体中的照射区域在改变电特性而没有其他电特性的实质变化的情况下特别有价值。

6. 发明授权

US4278476A Method of making ion implanted reverse-conducting thyristor 失效
标题翻译：制造离子注入反向晶闸管的方法
公开(公告)号：US4278476A
公开(公告)日：1981-07-14
申请号：US100680
申请日：1979-12-05
申请人： John Bartko , Earl S. Schlegel
发明人： John Bartko , Earl S. Schlegel
IPC分类号： H01L21/265 , H01L29/08 , H01L29/10 , H01L29/74
CPC分类号： H01L21/26513 , H01L29/0834 , H01L29/102 , Y10S148/084
摘要： A method for making a pnpn semiconductor reverse conducting thyristor comprises the steps of forming n-type semiconductor layers on both sides of a p-type semiconductor substrate for forming an n-type emitter layer and an n-type anode-base layer. A p-type semiconductor impurity region is formed in the n-type anode-base layer for forming a p-type anode layer. A p.sup.+ -type semiconductor layer is ion implanted in the p-type substrate adjacent to the n-type cathode emitter layer by irradiating it with boron atoms.
摘要翻译：制造pnpn半导体反向导通晶闸管的方法包括在用于形成n型发射极层和n型阳极基底层的p型半导体衬底的两侧上形成n型半导体层的步骤。在用于形成p型阳极层的n型阳极基底层中形成p型半导体杂质区。通过用硼原子照射p +型半导体层，离子注入邻近n型阴极发射极层的p型衬底中。

7. 发明授权

US4076555A Irradiation for rapid turn-off reverse blocking diode thyristor 失效
标题翻译：快速关断反向阻塞二极管晶闸管的照射
公开(公告)号：US4076555A
公开(公告)日：1978-02-28
申请号：US686857
申请日：1976-05-17
申请人： Chang K. Chu , John Bartko , Patrick E. Felice
发明人： Chang K. Chu , John Bartko , Patrick E. Felice
IPC分类号： H01L29/73 , H01L21/263 , H01L21/331 , H01L29/74 , H01L29/744 , H01L29/861 , H01L29/87
CPC分类号： H01L29/87 , H01L21/263
摘要： The turn-off time of a reverse blocking diode thyristor is decreased without significantly effecting other electrical characteristics by irradiating with a radiation source to a dosage corresponding to between about 4 .times. 10.sup.13 and about 2 .times. 10.sup.14 electrons/cm.sup.2 and preferably to between about 6 .times. 10.sup.13 and about 2 .times. 10.sup.14 electrons/cm.sup.2 with 2 MeV electron radiation source. Preferably the radiation source is electron radiation with an energy greater than 1 MeV.
摘要翻译：反向阻断二极管晶闸管的关断时间降低，而不会通过用辐射源照射到相当于约4×10 13至约2×10 14电子/ cm 2之间的剂量而显着地影响其它电气特性，优选地在约6× 1013和约2×1014个电子/ cm 2与2MeV电子辐射源。优选地，辐射源是能量大于1MeV的电子辐射。

8. 发明授权

US5038042A High resolution scintillation counters 失效
标题翻译：高分辨率闪烁计数器
公开(公告)号：US5038042A
公开(公告)日：1991-08-06
申请号：US466141
申请日：1990-01-16
申请人： J. Richard Hansen , John Bartko
发明人： J. Richard Hansen , John Bartko
IPC分类号： G01T1/20 , G01T1/202
CPC分类号： G01T1/2002 , G01T1/202
摘要： High resolution scintillation counters comprise a flat-faced photomultiplier tube 10 optically coupled to a long scintillator rod 30 having reduced internal light reflectance 45 and a medium 55 between the photomultiplier tube and the scintillator, said medium having both an index of refraction less than that of the scintillator and the capacity to attenuate light traveling from the scintillator to the photomultiplier on the basis of the light's point of origin within the scintillator. In preferred embodiments, the medium comprises air. The scintillation counters disclosed are useful in the detection of electromagnetic radiation, especially gamma rays.

9. 发明授权

US5250388A Production of highly conductive polymers for electronic circuits 失效
标题翻译：生产用于电子电路的高导电聚合物
公开(公告)号：US5250388A
公开(公告)日：1993-10-05
申请号：US200331
申请日：1988-05-31
申请人： Karl F. Schoch, Jr. , John Bartko , Maurice H. Hanes , Francis H. Ruddy
发明人： Karl F. Schoch, Jr. , John Bartko , Maurice H. Hanes , Francis H. Ruddy
IPC分类号： B29C35/08 , B29C59/16 , G03C5/00 , G03F7/00 , H01L51/30 , H01L21/04
CPC分类号： H01L51/0508 , B29C59/16 , H01L51/002 , H01L51/0041 , H01L51/0512 , H01L51/0516 , H01L51/0541 , B29C2035/0872
摘要： Processes for producing stable, radiation hard, highly conductive polymers by a combination of chemical doping and ion irradiation and microelectronics are described. The highly conductive polymers formed by these processes may contain regions of different kinds of conductivity on the same polymer. Resist coatings and masks are used in conjunction with chemical doping and ion irradiation to create specific predetermined n and p conductivity patterns and insulation areas on polymeric films of selected thicknesses for electronic circuitry applications. The resulting circuitry, besides having a conductivity approaching that of metal, is extremely light in weight, flexible, and conductively stable. Several different configurations of microelectronic junction devices fabricated from single type or multiple type conductivity polymer films used either alone or with a polymer of opposite conductivity and a suitable metal or metals are disclosed.
摘要翻译：描述了通过化学掺杂和离子照射和微电子的组合产生稳定的，辐射硬的，高导电的聚合物的方法。通过这些方法形成的高导电性聚合物可以在同一聚合物上含有不同种类的导电性的区域。抗蚀剂涂层和掩模与化学掺杂和离子辐射结合使用，以在电子电路应用的选定厚度的聚合物膜上产生特定的预定n和p导电图案和绝缘区域。所得到的电路除了具有接近金属的导电性之外，重量轻，柔性和导电稳定性非常轻。公开了由单一或多类型导电聚合物膜制造的微电子连接装置的几种不同结构，其单独使用或与具有相反导电性的聚合物和适用的金属或金属一起使用。

10. 发明授权

US4857259A Neutron dosimeter 失效
标题翻译：中子剂量计
公开(公告)号：US4857259A
公开(公告)日：1989-08-15
申请号：US863899
申请日：1986-05-16
申请人： John Bartko , Karl F. Schoch, Jr. , Thomas V. Congedo , Stanwood L. Anderson, Jr.
发明人： John Bartko , Karl F. Schoch, Jr. , Thomas V. Congedo , Stanwood L. Anderson, Jr.
IPC分类号： G01T1/26 , G01T3/00
CPC分类号： G01T1/26 , G01T3/00
摘要： A neutron dosimeter and a method for neutron dosimetry involving a two-layer structure, one layer being a fissile material, and the other being a material which changes its conductivity in accordance with a density of implanted ions. Neutrons striking the fissile material result in the production of energetic ions, a determinable number of which implant themselves in the second layer and so alter its conductivity. Measurements of the conductivity of the second layer provide information from which neutron dose may be inferred.

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