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1. 发明授权

US4317680A Diffusion source and method of preparing 失效
标题翻译：扩散源及其制备方法
公开(公告)号：US4317680A
公开(公告)日：1982-03-02
申请号：US202552
申请日：1980-10-31
申请人： Chang K. Chu , George W. Vomish
发明人： Chang K. Chu , George W. Vomish
IPC分类号： H01L21/223 , C30B31/16 , H01L21/22 , C22C28/00
CPC分类号： C30B31/165 , H01L21/2225 , Y10S252/95 , Y10S420/903
摘要： The present invention is directed to a diffusion source for establishing a p-type conductivity region in a semiconductor device and to a method for preparing such diffusion source. The diffusion source consists of pure silicon powder diffused with a p-type impurity.
摘要翻译：本发明涉及用于在半导体器件中建立p型导电区域的扩散源和用于制备这种扩散源的方法。扩散源由纯硅粉末与p型杂质扩散组成。

2. 发明授权

US4311534A Reducing the reverse recovery charge of thyristors by nuclear irradiation 失效
标题翻译：通过核辐射降低晶闸管的反向恢复电荷
公开(公告)号：US4311534A
公开(公告)日：1982-01-19
申请号：US163548
申请日：1980-06-27
申请人： John Bartko , Krishan S. Tarneja , Chang K. Chu , Earl S. Schlegel
发明人： John Bartko , Krishan S. Tarneja , Chang K. Chu , Earl S. Schlegel
IPC分类号： H01L21/322 , H01L21/263 , H01L29/167 , H01L29/74 , H01L7/54
CPC分类号： H01L29/167 , H01L21/263 , Y10S148/084
摘要： A method of reducing the reverse recovery charge of thyristors without substantially increasing forward voltage drop by first determining the depth of the anode PN junction from a major surface adjoining a cathode emitter region. The depth of maximum defect generation in thyristor on irradiation through the major surface with a given radiation source radiating particles with molecular weight greater than one, preferably proton or alpha particles, and adjusting the energy level at the major surface of the thyristor from the radiation source to provide the depth of maximum defect generation adjacent the anode PN junction and preferably in the anode base region within 20 micrometers of the anode PN junction or in the anode emitter region within 15 micrometers of the anode PN junction. Thereafter the thyristor is irradiated through said major surface with the adjusted energy level from the radiation source to a given dosage to reduce the reverse recovery stored charge of the thyristor without substantially increasing the forward voltage drop.
摘要翻译：一种减少晶闸管的反向恢复电荷的方法，而不会通过首先确定来自邻接阴极发射极区的主表面的阳极PN结的深度而基本上增加正向压降。通过具有给定辐射源的主表面照射的晶闸管中的最大缺陷产生的深度辐射分子量大于1的颗粒，优选质子或α粒子，并且从辐射源调节晶闸管的主表面处的能级以提供邻近阳极PN结的最佳缺陷产生的深度，优选在阳极PN结的20微米内的阳极基极区域或阳极PN结的15微米内的阳极发射极区域中提供最大缺陷产生的深度。此后，晶闸管通过所述主表面照射具有从辐射源到给定剂量的调节能级，以减少晶闸管的反向恢复存储电荷，而不会基本上增加正向压降。

3. 发明授权

US4240844A Reducing the switching time of semiconductor devices by neutron irradiation 失效
标题翻译：通过中子照射降低半导体器件的开关时间
公开(公告)号：US4240844A
公开(公告)日：1980-12-23
申请号：US972302
申请日：1978-12-22
申请人： Patrick E. Felice , John Bartko , Krishan S. Tarneja , Chang K. Chu
发明人： Patrick E. Felice , John Bartko , Krishan S. Tarneja , Chang K. Chu
IPC分类号： H01L21/322 , H01L21/263 , H01L21/26
CPC分类号： H01L21/263 , Y10S148/165
摘要： The switching time of certain semiconductor devices is decreased while maintaining other electrical characteristics of the devices by irradiating them with a neutron radiation source of greater than 1.0 Mev. to a dosage between 1.times.10.sup.11 and 1.times.10.sup.15 neutrons per square centimeter. The irradiation is preferably to a dosage between 1.times.10.sup.1 and 1.times.10.sup.14 neutrons per square centimeter and preferably has substantial energy greater than 14 Mev. The devices are also annealed during and/or subsequent to the irradiation at a temperature higher than the highest specified temperature and preferably at least 50.degree. C. higher than the highest specified temperature.
摘要翻译：某些半导体器件的切换时间减少，同时通过用大于1.0Mev的中子辐射源照射器件来保持器件的其它电气特性。至1x1011至1×10 15个中子每平方厘米的剂量。照射优选为每平方厘米1×101-1×1014个中子之间的剂量，并且优选具有大于14Mev的实质能量。在高于最高规定温度且优选高于最高规定温度的至少50℃的温度下，在照射期间和/或之后也将器件退火。

4. 发明授权

US4080620A Reverse switching rectifier and method for making same 失效
标题翻译：反向开关整流器及其制作方法
公开(公告)号：US4080620A
公开(公告)日：1978-03-21
申请号：US632433
申请日：1975-11-17
申请人： Chang K. Chu
发明人： Chang K. Chu
IPC分类号： H01L29/74 , H01L29/08 , H01L29/417 , H01L29/861 , H01L29/87
CPC分类号： H01L29/41716 , H01L29/0839 , H01L29/87
摘要： A reverse switching rectifier is described in which a PNPN semiconductor structure has a specially adapted N-type end zone or cathode-emitter zone. The N-type end zone penetrates to two different levels in the semiconductor body. A deep central portion and a shallow peripheral portion of the N-type end zone are produced by etching a cavity in the center of the body followed by diffusion of N-type dopant material. The exposed surfaces of the N-type end zone are then metallized to provide electrical and thermal contact thereto.
摘要翻译：描述了一种逆开关整流器，其中PNPN半导体结构具有特别适合的N型端区或阴极 - 发射区。 N型端部区域在半导体本体中贯穿两个不同的层次。通过蚀刻身体中心的空腔，随后N型掺杂剂材料的扩散，产生N型端区的深中心部分和浅周边部分。然后将N型端部区域的暴露表面金属化以提供与其的电接触和热接触。

5. 发明授权

US4042947A High voltage transistor with high gain 失效
标题翻译：具有高增益的高压晶体管
公开(公告)号：US4042947A
公开(公告)日：1977-08-16
申请号：US646794
申请日：1976-01-06
申请人： Chang K. Chu , Philip L. Hower , George W. Vomish
发明人： Chang K. Chu , Philip L. Hower , George W. Vomish
IPC分类号： H01L21/331 , H01L29/08 , H01L29/417 , H01L29/73 , H01L29/732 , H01L29/72
CPC分类号： H01L29/41708 , H01L29/0804 , H01L29/732
摘要： A transistor device is described in which an NPN semiconductor structure has a specially adapted N-type emitter zone and associated electrode. The emitter zone is produced by etching a cavity in one major surface of the semiconductor body followed by diffusion of N-type dopant material. Emitter, base and collector electrodes are then affixed to the appropriate surfaces of the body to provide electrical and thermal contact thereto.
摘要翻译：描述了一种晶体管器件，其中NPN半导体结构具有特别适合的N型发射极区和相关电极。通过蚀刻半导体主体的一个主表面中的空腔，然后N型掺杂剂材料的扩散来产生发射极区。然后将发射极，基极和集电极固定到主体的适当表面以提供与其的电接触和热接触。

6. 发明授权

US4076555A Irradiation for rapid turn-off reverse blocking diode thyristor 失效
标题翻译：快速关断反向阻塞二极管晶闸管的照射
公开(公告)号：US4076555A
公开(公告)日：1978-02-28
申请号：US686857
申请日：1976-05-17
申请人： Chang K. Chu , John Bartko , Patrick E. Felice
发明人： Chang K. Chu , John Bartko , Patrick E. Felice
IPC分类号： H01L29/73 , H01L21/263 , H01L21/331 , H01L29/74 , H01L29/744 , H01L29/861 , H01L29/87
CPC分类号： H01L29/87 , H01L21/263
摘要： The turn-off time of a reverse blocking diode thyristor is decreased without significantly effecting other electrical characteristics by irradiating with a radiation source to a dosage corresponding to between about 4 .times. 10.sup.13 and about 2 .times. 10.sup.14 electrons/cm.sup.2 and preferably to between about 6 .times. 10.sup.13 and about 2 .times. 10.sup.14 electrons/cm.sup.2 with 2 MeV electron radiation source. Preferably the radiation source is electron radiation with an energy greater than 1 MeV.
摘要翻译：反向阻断二极管晶闸管的关断时间降低，而不会通过用辐射源照射到相当于约4×10 13至约2×10 14电子/ cm 2之间的剂量而显着地影响其它电气特性，优选地在约6× 1013和约2×1014个电子/ cm 2与2MeV电子辐射源。优选地，辐射源是能量大于1MeV的电子辐射。

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