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1. 发明授权

US4240844A Reducing the switching time of semiconductor devices by neutron irradiation 失效
标题翻译：通过中子照射降低半导体器件的开关时间
公开(公告)号：US4240844A
公开(公告)日：1980-12-23
申请号：US972302
申请日：1978-12-22
申请人： Patrick E. Felice , John Bartko , Krishan S. Tarneja , Chang K. Chu
发明人： Patrick E. Felice , John Bartko , Krishan S. Tarneja , Chang K. Chu
IPC分类号： H01L21/322 , H01L21/263 , H01L21/26
CPC分类号： H01L21/263 , Y10S148/165
摘要： The switching time of certain semiconductor devices is decreased while maintaining other electrical characteristics of the devices by irradiating them with a neutron radiation source of greater than 1.0 Mev. to a dosage between 1.times.10.sup.11 and 1.times.10.sup.15 neutrons per square centimeter. The irradiation is preferably to a dosage between 1.times.10.sup.1 and 1.times.10.sup.14 neutrons per square centimeter and preferably has substantial energy greater than 14 Mev. The devices are also annealed during and/or subsequent to the irradiation at a temperature higher than the highest specified temperature and preferably at least 50.degree. C. higher than the highest specified temperature.
摘要翻译：某些半导体器件的切换时间减少，同时通过用大于1.0Mev的中子辐射源照射器件来保持器件的其它电气特性。至1x1011至1×10 15个中子每平方厘米的剂量。照射优选为每平方厘米1×101-1×1014个中子之间的剂量，并且优选具有大于14Mev的实质能量。在高于最高规定温度且优选高于最高规定温度的至少50℃的温度下，在照射期间和/或之后也将器件退火。

2. 发明授权

US4311534A Reducing the reverse recovery charge of thyristors by nuclear irradiation 失效
标题翻译：通过核辐射降低晶闸管的反向恢复电荷
公开(公告)号：US4311534A
公开(公告)日：1982-01-19
申请号：US163548
申请日：1980-06-27
申请人： John Bartko , Krishan S. Tarneja , Chang K. Chu , Earl S. Schlegel
发明人： John Bartko , Krishan S. Tarneja , Chang K. Chu , Earl S. Schlegel
IPC分类号： H01L21/322 , H01L21/263 , H01L29/167 , H01L29/74 , H01L7/54
CPC分类号： H01L29/167 , H01L21/263 , Y10S148/084
摘要： A method of reducing the reverse recovery charge of thyristors without substantially increasing forward voltage drop by first determining the depth of the anode PN junction from a major surface adjoining a cathode emitter region. The depth of maximum defect generation in thyristor on irradiation through the major surface with a given radiation source radiating particles with molecular weight greater than one, preferably proton or alpha particles, and adjusting the energy level at the major surface of the thyristor from the radiation source to provide the depth of maximum defect generation adjacent the anode PN junction and preferably in the anode base region within 20 micrometers of the anode PN junction or in the anode emitter region within 15 micrometers of the anode PN junction. Thereafter the thyristor is irradiated through said major surface with the adjusted energy level from the radiation source to a given dosage to reduce the reverse recovery stored charge of the thyristor without substantially increasing the forward voltage drop.
摘要翻译：一种减少晶闸管的反向恢复电荷的方法，而不会通过首先确定来自邻接阴极发射极区的主表面的阳极PN结的深度而基本上增加正向压降。通过具有给定辐射源的主表面照射的晶闸管中的最大缺陷产生的深度辐射分子量大于1的颗粒，优选质子或α粒子，并且从辐射源调节晶闸管的主表面处的能级以提供邻近阳极PN结的最佳缺陷产生的深度，优选在阳极PN结的20微米内的阳极基极区域或阳极PN结的15微米内的阳极发射极区域中提供最大缺陷产生的深度。此后，晶闸管通过所述主表面照射具有从辐射源到给定剂量的调节能级，以减少晶闸管的反向恢复存储电荷，而不会基本上增加正向压降。

3. 发明授权

US4075037A Tailoring of recovery charge in power diodes and thyristors by irradiation 失效
标题翻译：通过照射调整功率二极管和晶闸管的恢复电荷
公开(公告)号：US4075037A
公开(公告)日：1978-02-21
申请号：US687278
申请日：1976-05-17
申请人： Krishan S. Tarneja , Joseph E. Johnson , John Bartko
发明人： Krishan S. Tarneja , Joseph E. Johnson , John Bartko
IPC分类号： H01L29/74 , H01L21/263 , H01L21/322 , H01L29/32 , H01L29/861
CPC分类号： H01L29/32 , H01L21/263 , H01L29/861
摘要： The recovery charge of power diodes and thyristors is tailored and matched by irradiation through a major surface of the semiconductor body with a given radiation source, preferably of electron radiation, to a dosage corresponding to between about 1 .times. 10.sup.12 and 8 .times. 10.sup.12 electrons per centimeter square with 2 MeV electron radiation. Preferably, the recovery charge of each device of a group of a type of diode or thyristor is first measured, and the group divided into subgroups according to the measured recovery charge of each device. The devices of at least one subgroup is then irradiated with said given radiation source to dosages corresponding to between about 1 .times. 10.sup.12 and 8 .times. 10.sup.12 electrons per centimeter square with 2 MeV electron radiation, and the recovery charge of each irradiated device is again measured to determine the incremental change of recovery charge as a function of irradiation dosage. A recovery charge of another device of said type of diode or thyristor is then measured, and the device irradiated with said radiation source to a determined dosage corresponding to a desired incremental change in recovery charge to tailor the recovery charge of said device to a desired value.
摘要翻译：功率二极管和晶闸管的恢复电荷通过辐射通过半导体本体的主表面与给定的辐射源（优选电子辐射）照射到相当于约1×10 12和8×10 12电子/厘米 2 MeV电子辐射。优选地，首先测量一组二极管或晶闸管的每个器件的恢复电荷，并且根据每个器件的测量的恢复电荷将该组划分成子组。然后至少一个亚组的装置用所述给定的辐射源用2MeV电子辐射照射到相当于每平方厘米约1×10 12和8×10 12个电子之间的剂量，并且再次测量每个照射装置的恢复电荷确定作为照射剂量的函数的恢复电荷的增量变化。然后测量所述类型的二极管或晶闸管的另一装置的恢复电荷，并且将用所述辐射源照射的装置与对应于恢复电荷的期望增量变化的确定剂量相结合，以将所述装置的恢复电荷定制到期望值。

4. 发明授权

US3933527A Fine tuning power diodes with irradiation 失效
标题翻译：微调功率二极管与照射
公开(公告)号：US3933527A
公开(公告)日：1976-01-20
申请号：US339699
申请日：1973-03-09
申请人： Krishan S. Tarneja , John Bartko , Joseph E. Johnson
发明人： Krishan S. Tarneja , John Bartko , Joseph E. Johnson
IPC分类号： H01L21/00 , H01L21/263
CPC分类号： H01L21/263 , H01L21/00
摘要： Diodes of a particular type are fine tuned with irradiation to optimize the reverse recovery time while minimizing forward voltage drop and providing more uniform electrical characteristics. The initial and desired minority carrier lifetimes in the anode region of the type are determined as a function of forward voltage drop and reverse recovery time, and the minority carrier radiation damage factor is determined for a desired type of diode and radiation source. The radiation dosage to achieve the desired carrier lifetime with the radiation source is thereafter determined from the function 1/.tau. = 1/.tau..sub.o + K.phi., where .tau. is the desired minority carrier lifetime, .tau..sub.o is the initial minority carrier lifetime, K is the determined minority carrier radiation damage factor and .phi. is the radiation dosage. A major surface and preferably the major surface adjoining the anode region of the diodes is then irradiated with the radiation source to the determined radiation dosage. Preferably, the radiation dosage is between about 1 .times. 10.sup.12 and 5 .times. 10.sup.13 e/cm.sup.2, with electron radiation of intensity between 1 and 3 Mev.
摘要翻译：特定类型的二极管通过照射进行微调，以优化反向恢复时间，同时最小化正向压降并提供更均匀的电气特性。确定该类型的阳极区域中的初始和期望的少数载流子寿命作为正向压降和反向恢复时间的函数，并且为所需类型的二极管和辐射源确定少数载流子辐射损伤因子。此后，根据功能1 / tau = 1 / tau o + K phi确定达到期望的载流子寿命的辐射剂量，其中τ是期望的少数载流子寿命，τo是初始少数载流子寿命，K 是确定的少数载体辐射损伤因子，phi是辐射剂量。然后将主表面和优选地邻接二极管的阳极区域的主表面用辐射源照射到确定的辐射剂量。优选地，辐射剂量在约1×10 12和5×10 13 e / cm 2之间，电子辐射强度在1和3Mev之间。

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