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1. 发明申请

US20060026472A1 Designing Scan Chains With Specific Parameter Sensitivities to Identify Process Defects 失效
标题翻译：设计具有特定参数敏感度的扫描链来识别过程缺陷
公开(公告)号：US20060026472A1
公开(公告)日：2006-02-02
申请号：US10710642
申请日：2004-07-27
申请人： James Adkisson , Greg Bazan , John Cohn , Matthew Grady , Leendert Huisman , Mark Jaffe , Phillip Nigh , Leah Pastel , Thomas Sopchak , David Sweenor , David Vallett
发明人： James Adkisson , Greg Bazan , John Cohn , Matthew Grady , Leendert Huisman , Mark Jaffe , Phillip Nigh , Leah Pastel , Thomas Sopchak , David Sweenor , David Vallett
IPC分类号： G06F17/50 , G01R31/28
CPC分类号： G06F17/5045 , G01R31/31855 , G01R31/318586 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A method is disclosed for designing scan chains in an integrated circuit chip with specific parameter sensitivities to identify fabrication process defects causing test fails and chip yield loss. The composition of scan paths in the integrated circuit chip is biased to allow them to also function as on-product process monitors. The method adds grouping constraints that bias scan chains to have common latch cell usage where possible, and also biases cell routing to constrain scan chain routing to given restricted metal layers for interconnects. The method assembles a list of latch design parameters which are sensitive to process variation or integrity, and formulates a plan for scan chain design which determines the number and the length of scan chains. A model is formulated of scan chain design based upon current state of yield and process integrity, wherein certain latch designs having dominant sensitivities are chosen for specific ones of the scan chains on the chip. The model is provided as input parameters to a global placement and wiring program used to lay out the scan chains. Test data on the chip is then analyzed to determine and isolate systematic yield problems denoted by attributes of a statistically significant failing population of a specific type of scan chain.
摘要翻译：公开了一种用于设计具有特定参数灵敏度的集成电路芯片中的扫描链的方法，以识别导致测试失败和芯片产量损失的制造工艺缺陷。集成电路芯片中的扫描路径的组成被偏置以允许它们也用作产品过程监视器。该方法增加了分组约束，使得扫描链偏置以在可能的情况下具有共同的锁存单元使用，并且还偏置小区路由以将扫描链路由限制到用于互连的给定受限金属层。该方法组合了对过程变化或完整性敏感的锁存器设计参数列表，并且制定了扫描链设计的计划，该计划决定了扫描链的数量和长度。基于产量和过程完整性的当前状态来制定扫描链设计的模型，其中为芯片上的特定扫描链选择具有主要灵敏度的某些锁存器设计。该模型作为输入参数提供给用于布置扫描链的全局放置和布线程序。然后对芯片上的测试数据进行分析，以确定和分离由特定类型的扫描链的统计学显着失败群体的属性表示的系统产量问题。

2. 发明申请

US20070296006A1 STRUCTURE FOR PIXEL SENSOR CELL THAT COLLECTS ELECTRONS AND HOLES 失效
标题翻译：用于收集电子和孔的像素传感器单元的结构
公开(公告)号：US20070296006A1
公开(公告)日：2007-12-27
申请号：US11850776
申请日：2007-09-06
申请人： James Adkisson , Andres Bryant , John Ellis-Monaghan , Mark Jaffe , Jeffrey Johnson , Alain Loiseau
发明人： James Adkisson , Andres Bryant , John Ellis-Monaghan , Mark Jaffe , Jeffrey Johnson , Alain Loiseau
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281 , H01L31/1037
摘要： The present invention relates to a design structure for a pixel sensor cell. The pixel sensor cell approximately doubles the available signal for a given quanta of light. A design structure for a pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
摘要翻译：本发明涉及一种像素传感器单元的设计结构。像素传感器单元对于给定的光量大约使可用信号加倍。具有降低的复杂度的像素传感器单元的设计结构包括形成在基板的表面下面的n型收集阱区域，用于收集电子辐射产生的电子撞击在像素传感器单元上，以及p型收集阱区域用于收集由撞击光子产生的孔的基板的表面。具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小的第一输入和第二输入的信号。

3. 发明申请

US20070145438A1 PIXEL SENSOR CELL HAVING REDUCED PINNING LAYER BARRIER POTENTIAL AND METHOD THEREOF 有权
标题翻译：具有减少的钉扎层障碍物的像素传感器电池及其方法
公开(公告)号：US20070145438A1
公开(公告)日：2007-06-28
申请号：US11681454
申请日：2007-03-02
申请人： James Adkisson , Andres Bryant , John Ellis-Monaghan , Jeffrey Gambino , Mark Jaffe , Jerome Lasky , Richard Phelps
发明人： James Adkisson , Andres Bryant , John Ellis-Monaghan , Jeffrey Gambino , Mark Jaffe , Jerome Lasky , Richard Phelps
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L31/0352
摘要： A pixel sensor cell structure and method of manufacture. The pixel cell comprises a doped layer formed adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier interference to charge transfer caused by a pinning layer is reduced.
摘要翻译：像素传感器单元结构及其制造方法。像素单元包括与传输栅极结构的第一侧相邻形成的用于耦合收集阱区和沟道区的掺杂层。减少了由钉扎层引起的对电荷转移的电势障碍干扰。

4. 发明申请

US20070102738A1 LIGHT SHIELD FOR CMOS IMAGER 有权
标题翻译： CMOS成像器的光栅
公开(公告)号：US20070102738A1
公开(公告)日：2007-05-10
申请号：US11164072
申请日：2005-11-09
申请人： James Adkisson , Jeffrey Gambino , Mark Jaffe
发明人： James Adkisson , Jeffrey Gambino , Mark Jaffe
IPC分类号： H01L31/113 , H01L31/062
CPC分类号： H01L27/14623 , H01L27/14685
摘要： The present invention provides a light shield for shielding the floating diffusion of a complementary metal-oxide semiconductor (CMOS) imager. In accordance with an embodiment of the present invention, there is provided a pixel sensor cell including: a device region formed on a substrate; and a first layer of material forming a sidewall adjacent to a side of the device region for blocking electromagnetic radiation from the device region.
摘要翻译：本发明提供一种用于屏蔽互补金属氧化物半导体（CMOS）成像器的浮动扩散的遮光罩。根据本发明的实施例，提供了一种像素传感器单元，包括：形成在基板上的器件区域; 以及形成与所述器件区域的一侧相邻的侧壁的第一材料层，用于阻挡来自所述器件区域的电磁辐射。

5. 发明申请

US20060128126A1 MASKED SIDEWALL IMPLANT FOR IMAGE SENSOR 有权
标题翻译：用于图像传感器的嵌入式平板植入体
公开(公告)号：US20060128126A1
公开(公告)日：2006-06-15
申请号：US10905043
申请日：2004-12-13
申请人： James Adkisson , Mark Jaffe , Arthur Johnson , Robert Leidy , Jeffrey Maling
发明人： James Adkisson , Mark Jaffe , Arthur Johnson , Robert Leidy , Jeffrey Maling
IPC分类号： H01L21/425
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14687 , H01L27/14689
摘要： A novel image sensor structure formed on a substrate of a first conductivity type includes a photosensitive device of a second conductivity type and a surface pinning layer of the first conductivity type. A trench isolation region is formed adjacent to the photosensitive device pinning layer. The structure includes a dopant region comprising material of the first conductivity type formed along a sidewall of the isolation region that is adapted to electrically couple the pinning layer to the substrate. The corresponding method facilitates an angled ion implantation of dopant material in the isolation region sidewall by first fabricating the photoresist layer and reducing its size by removing a corner, or a corner portion thereof, which may block the angled implant material. To facilitate the angled implant to the sidewall edge past resist block masks, two methods are proposed: 1) a spacer type etch of the imaged photoresist; or, 2) a corner sputter process of the imaged photoresist.
摘要翻译：形成在第一导电类型的衬底上的新型图像传感器结构包括第二导电类型的光敏器件和第一导电类型的表面钉扎层。在光敏器件钉扎层附近形成沟槽隔离区域。该结构包括掺杂区域，该掺杂剂区域包括沿着隔离区域的侧壁形成的第一导电类型的材料，其适于将钉扎层电耦合到衬底。相应的方法通过首先制造光致抗蚀剂层并且通过去除可能阻挡成角度的植入材料的角部或其角部来减小其尺寸来促进掺杂剂材料在隔离区域侧壁中的成角度的离子注入。为了促进通过抗蚀剂阻挡掩模的侧壁边缘的成角度注入，提出了两种方法：1）成像光致抗蚀剂的间隔物型蚀刻; 或2）成像光致抗蚀剂的角溅射工艺。

6. 发明申请

US20060113622A1 A DAMASCENE COPPER WIRING IMAGE SENSOR 有权
标题翻译： DAMASCENE铜接线图像传感器
公开(公告)号：US20060113622A1
公开(公告)日：2006-06-01
申请号：US10904807
申请日：2004-11-30
申请人： James Adkisson , Jeffrey Gambino , Mark Jaffe , Robert Leidy , Anthony Stamper
发明人： James Adkisson , Jeffrey Gambino , Mark Jaffe , Robert Leidy , Anthony Stamper
IPC分类号： H01L31/00
CPC分类号： H01L27/14685 , H01L21/76819 , H01L21/76834 , H01L21/76838 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14687
摘要： An image sensor array and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack with improved thickness uniformity to result in a pixel array exhibiting increased light sensitivity. In the sensor array, each Cu metallization level includes a Cu metal wire structure formed at locations between each array pixel and, a barrier material layer is formed on top each Cu metal wire structure that traverses the pixel optical path. By implementing a single mask or self-aligned mask methodology, a single etch is conducted to completely remove the interlevel dielectric and barrier layers that traverse the optical path. The etched opening is then refilled with dielectric material. Prior to depositing the refill dielectric, a layer of either reflective or absorptive material is formed along the sidewalls of the etched opening to improve sensitivity of the pixels by either reflecting light to the underlying photodiode or by eliminating light reflections.
摘要翻译：一种图像传感器阵列和制造方法，其中传感器包括铜（Cu）金属化水平，允许结合更薄的层间电介质叠层，改进的厚度均匀性，以产生呈现增加的光敏度的像素阵列。在传感器阵列中，每个Cu金属化层包括在每个阵列像素之间的位置处形成的Cu金属线结构，并且阻挡材料层形成在穿过像素光路的每个Cu金属线结构上。通过实现单掩模或自对准掩模方法，进行单次蚀刻以完全去除穿过光路的层间电介质层和阻挡层。然后将蚀刻的开口用电介质材料重新填充。在沉积再充填电介质之前，沿蚀刻开口的侧壁形成反射或吸收材料层，以通过将光反射到下面的光电二极管或通过消除光反射来提高像素的灵敏度。

7. 发明申请

US20080108170A1 CMOS IMAGER WITH CU WIRING AND METHOD OF ELIMINATING HIGH REFLECTIVITY INTERFACES THEREFROM 失效
标题翻译：具有CU布线的CMOS成像器和消除其高反射性接口的方法
公开(公告)号：US20080108170A1
公开(公告)日：2008-05-08
申请号：US11959841
申请日：2007-12-19
申请人： James Adkisson , Jeffrey Gambino , Mark Jaffe , Robert Leidy , Richard Rassel , Anthony Stamper
发明人： James Adkisson , Jeffrey Gambino , Mark Jaffe , Robert Leidy , Richard Rassel , Anthony Stamper
IPC分类号： H01L21/04
CPC分类号： H01L27/14636 , H01L21/76819 , H01L21/76834 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14645 , H01L27/14683
摘要： A CMOS image sensor and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack to result in a pixel array exhibiting increased light sensitivity. The CMOS image sensor includes structures having a minimum thickness of barrier layer metal that traverses the optical path of each pixel in the sensor array or, that have portions of barrier layer metal selectively removed from the optical paths of each pixel, thereby minimizing reflectance. That is, by implementing various block or single mask methodologies, portions of the barrier layer metal are completely removed at locations of the optical path for each pixel in the array. In a further embodiment, the barrier metal layer may be formed atop the Cu metallization by a self-aligned deposition.
摘要翻译： CMOS图像传感器和制造方法，其中传感器包括铜（Cu）金属化水平，允许结合较薄的层间电介质堆叠以产生呈现增加的光灵敏度的像素阵列。 CMOS图像传感器包括具有穿过传感器阵列中的每个像素的光路的阻挡层金属的最小厚度的结构，或者具有从每个像素的光路中选择性地去除的阻挡层金属的部分，从而使反射率最小化的结构。也就是说，通过实现各种块或单掩模方法，在阵列中的每个像素的光路的位置处完全去除了阻挡层金属的部分。在另一个实施例中，阻挡金属层可以通过自对准沉积形成在Cu金属化之上。

8. 发明申请

US20070187734A1 A CMOS IMAGER PHOTODIODE WITH ENHANCED CAPACITANCE 失效
标题翻译：具有增强电容的CMOS成像器光电二极管
公开(公告)号：US20070187734A1
公开(公告)日：2007-08-16
申请号：US11276085
申请日：2006-02-14
申请人： James Adkisson , John Ellis-Monaghan , Mark Jaffe , Dale Pearson , Dennis Rogers
发明人： James Adkisson , John Ellis-Monaghan , Mark Jaffe , Dale Pearson , Dennis Rogers
IPC分类号： H01L31/062
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14689 , H01L31/035281
摘要： A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface. In a further embodiment, an additional photosensitive element is provided that includes a laterally disposed charge collection region that contacts the non-laterally disposed charge collection region of the photosensitive element and underlies the doped layer formed at the substrate surface.
摘要翻译：一种像素传感器单元，具有具有表面的半导体衬底; 形成在具有与包括基板表面的物理边界完全隔离的非横向布置的电荷收集区域的基板中的感光元件。感光元件包括具有形成在第一导电类型材料的衬底中的侧壁的沟槽; 与所述侧壁中的至少一个相邻形成的第二导电类型材料的第一掺杂层; 以及形成在所述第一掺杂层和所述至少一个沟槽侧壁之间且形成在所述衬底的表面处的所述第一导电类型材料的第二掺杂层，所述第二掺杂层将所述第一掺杂层与所述至少一个沟槽侧壁隔离，基材表面。在另一个实施例中，提供附加的光敏元件，其包括横向设置的电荷收集区域，其接触感光元件的非横向设置的电荷收集区域，并且位于形成在基底表面处的掺杂层的下方。

9. 发明申请

US20060226456A1 PIXEL SENSOR CELL HAVING REDUCED PINNING LAYER BARRIER POTENTIAL AND METHOD THEREOF 有权
标题翻译：具有减少的钉扎层障碍物的像素传感器电池及其方法
公开(公告)号：US20060226456A1
公开(公告)日：2006-10-12
申请号：US10907570
申请日：2005-04-06
申请人： James Adkisson , Andres Bryant , John Ellis-Monaghan , Jeffrey Gambino , Mark Jaffe , Jerome Lasky , Richard Phelps
发明人： James Adkisson , Andres Bryant , John Ellis-Monaghan , Jeffrey Gambino , Mark Jaffe , Jerome Lasky , Richard Phelps
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L31/0352
摘要： A pixel sensor cell structure and method of manufacture. The pixel cell comprises a doped layer formed adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier interference to charge transfer caused by a pinning layer is reduced.
摘要翻译：像素传感器单元结构及其制造方法。像素单元包括与传输栅极结构的第一侧相邻形成的用于耦合收集阱区和沟道区的掺杂层。减少了由钉扎层引起的对电荷转移的电势障碍干扰。

10. 发明申请

US20060110905A1 HIGH SURFACE AREA ALUMINUM BOND PAD FOR THROUGH-WAFER CONNECTIONS TO AN ELECTRONIC PACKAGE 有权
标题翻译：高表面积的铝合金焊盘，用于通过电缆连接到电子包装
公开(公告)号：US20060110905A1
公开(公告)日：2006-05-25
申请号：US10904677
申请日：2004-11-23
申请人： James Adkisson , Jeffrey Gambino , Mark Jaffe , Richard Rassel , Edmund Sprogis
发明人： James Adkisson , Jeffrey Gambino , Mark Jaffe , Richard Rassel , Edmund Sprogis
IPC分类号： H01L21/44 , H01L21/50
CPC分类号： H01L24/02 , H01L23/3114 , H01L23/481 , H01L2224/0401 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/3011 , H01L2924/00
摘要： A bond pad for effecting through-wafer connections to an integrated circuit or electronic package and method of producing thereof. The bond pad includes a high surface area aluminum bond pad in order to resultingly obtain a highly reliable, low resistance connection between bond pad and electrical leads.
摘要翻译：用于实现通过晶片连接到集成电路或电子封装的接合焊盘及其制造方法。接合焊盘包括高表面积铝键合焊盘，以便得到接合焊盘和电引线之间的高度可靠的低电阻连接。

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