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1. 发明授权

US07541366B2 Pyrrolo[3,2-c]pyridine derivatives and processes for the preparation thereof 有权
标题翻译：吡咯并[3,2-c]吡啶衍生物及其制备方法
公开(公告)号：US07541366B2
公开(公告)日：2009-06-02
申请号：US11574406
申请日：2005-09-03
申请人： Jae-Gyu Kim , Byung-Nak Ahn , Hyouk-Woo Lee , Suk-Won Yoon , Young-Ae Yoon , Hyun-Ho Choi , Heui-Il Kang
发明人： Jae-Gyu Kim , Byung-Nak Ahn , Hyouk-Woo Lee , Suk-Won Yoon , Young-Ae Yoon , Hyun-Ho Choi , Heui-Il Kang
IPC分类号： A61K31/437 , C07D471/04
CPC分类号： C07D471/04
摘要： The present invention provides novel pyrrolo[3,2-c]pyridine derivatives or pharmaceutically acceptable salts thereof, processes for the preparation thereof, and compositions comprising the same. The pyrrolo[3,2-c]pyridine derivatives or pharmaceutically acceptable salts thereof of the present invention have excellent proton pump inhibition effects and possess the ability to attain a reversible proton pump inhibitory effect.
摘要翻译：本发明提供新颖的吡咯并[3,2-c]吡啶衍生物或其药学上可接受的盐，其制备方法和包含其的组合物。本发明的吡咯并[3,2-c]吡啶衍生物或其药学上可接受的盐具有优异的质子泵抑制作用，具有获得可逆质子泵抑制效果的能力。

2. 发明申请

US20070249658A1 Pyrrolo[3,2-C]Pyridine Deriatives and Processes for the Preparation Thereof 有权
标题翻译：吡咯并[3,2-C]吡啶衍生物及其制备方法
公开(公告)号：US20070249658A1
公开(公告)日：2007-10-25
申请号：US11574406
申请日：2005-09-03
申请人： Jae-Gyu Kim , Byung-Nak Ahn , Hyouk-Woo Lee , Suk-Won Yoon , Young-Ae Yoon , Hyun-Ho Choi , Heui-Il Kang
发明人： Jae-Gyu Kim , Byung-Nak Ahn , Hyouk-Woo Lee , Suk-Won Yoon , Young-Ae Yoon , Hyun-Ho Choi , Heui-Il Kang
IPC分类号： A61K31/44 , A61K31/47 , C07D217/00 , C07D403/00
CPC分类号： C07D471/04
摘要： The present invention provides novel pyrrolo[3,2-c]pyridine derivatives or pharmaceutically acceptable salts thereof, processes for the preparation thereof, and compositions comprising the same. The pyrrolo[3,2-c]pyridine derivatives or pharmaceutically acceptable salts thereof of the present invention have excellent proton pump inhibition effects and possess the ability to attain a reversible proton pump inhibitory effect.
摘要翻译：本发明提供新颖的吡咯并[3,2-c]吡啶衍生物或其药学上可接受的盐，其制备方法和包含其的组合物。本发明的吡咯并[3,2-c]吡啶衍生物或其药学上可接受的盐具有优异的质子泵抑制作用，具有获得可逆质子泵抑制效果的能力。

3. 发明申请

US20100063041A1 NOVEL PHENYLPROPIONIC ACID DERIVATIVES AS PEROXISOME PROLIFERATOR-ACTIVATED GAMMA RECEPTOR MODULATORS, METHOD OF THE SAME, AND PHARMACEUTICAL COMPOSITION COMPRISING THE SAME 审中-公开
标题翻译：新戊二酸衍生物作为过氧化物促进剂活化的游离体受体调节剂，其方法和包含其的药物组合物
公开(公告)号：US20100063041A1
公开(公告)日：2010-03-11
申请号：US12449979
申请日：2008-03-07
申请人： Ho-Sang Moon , Moo-Hi Yoo , Soon-Hoe Kim , Joong-In Lim , Moon-Ho Son , Mi-Kyung Kim , Chang-Yell Shin , Jin-Kwan Kim , Sang-Kuk Park , Yu-Na Chae , Hyun-Joo Shim , Sun-Ho Jeon , Hae-Sun Kim , Gil-Tae Wie , Dong-Hwan Kim , Byung-Kyu Lee , Chan-Sun Park , Byung-Nak Ahn , Eunkyung Kim , Myung-Ho Bae , Young-Ah Shin , Youn Hur , Chun-Ho Lee , Hyun-Ho Choi , Bongtae Kim , Wonee Chong
发明人： Ho-Sang Moon , Moo-Hi Yoo , Soon-Hoe Kim , Joong-In Lim , Moon-Ho Son , Mi-Kyung Kim , Chang-Yell Shin , Jin-Kwan Kim , Sang-Kuk Park , Yu-Na Chae , Hyun-Joo Shim , Sun-Ho Jeon , Hae-Sun Kim , Gil-Tae Wie , Dong-Hwan Kim , Byung-Kyu Lee , Chan-Sun Park , Byung-Nak Ahn , Eunkyung Kim , Myung-Ho Bae , Young-Ah Shin , Youn Hur , Chun-Ho Lee , Hyun-Ho Choi , Bongtae Kim , Wonee Chong
IPC分类号： A61K31/538 , C07D333/16 , A61K31/381 , C07D413/02 , A61K31/5377 , A61K31/5355 , C07D277/20 , A61K31/426 , C07D409/02 , A61K31/501 , C07D498/02 , A61P3/10 , A61P3/06
CPC分类号： C07D333/16 , C07D277/24 , C07D307/42 , C07D409/12 , C07D413/12 , C07D417/12
摘要： The present invention provides a novel phenylpropionic acid derivative and a PPAR-γ modulator comprising the same as an active ingredient. The phenylpropionic acid derivative of the present invention has modulatory action on function of PPAR-γ and then exhibits hypoglycemic, hypolipidemic and insulin resistance-reducing effects on PPAR-mediated diseases or disorders. Therefore, the present invention is prophylactically or therapeutically effective for diabetes and metabolic diseases.
摘要翻译：本发明提供了一种新的苯丙酸衍生物和包含其作为活性成分的PPAR-γ调节剂。本发明的苯基丙酸衍生物对PPAR-γ的功能具有调节作用，然后对PPAR介导的疾病或病症表现出降血糖，降血脂和胰岛素抵抗降低作用。因此，本发明对于糖尿病和代谢疾病具有预防性或治疗上的有效性。

4. 发明授权

US09070465B2 Anti-fuse circuit using MTJ breakdown and semiconductor device including same 有权
标题翻译：使用MTJ击穿的抗熔丝电路和包括其的半导体器件
公开(公告)号：US09070465B2
公开(公告)日：2015-06-30
申请号：US13586973
申请日：2012-08-16
申请人： Jong-Pil Son , Chul-Woo Park , Hong-Sun Hwang , Hyun-Ho Choi
发明人： Jong-Pil Son , Chul-Woo Park , Hong-Sun Hwang , Hyun-Ho Choi
IPC分类号： G11C11/00 , G11C11/16
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673
摘要： An anti-fuse circuit includes an array of anti-fuses. Each anti-fuse has a tunneling magneto-resistance (TMR) element series connected with a transistor, such that breakdown of a magnetic tunnel junction (MTJ) in response to an applied first voltage stores fuse information. A sensing circuit senses and amplifies respective output signals provided by the anti-fuses.
摘要翻译：反熔丝电路包括一组抗熔丝。每个反熔丝具有与晶体管连接的隧道磁阻（TMR）元件串联，使得响应于施加的第一电压的磁隧道结（MTJ）的击穿存储熔丝信息。感测电路感测并放大由防熔丝提供的各自的输出信号。

5. 发明授权

US08301147B2 Mobile terminal and handover method for the mobile terminal 有权
标题翻译：移动终端的移动终端和切换方法
公开(公告)号：US08301147B2
公开(公告)日：2012-10-30
申请号：US12849961
申请日：2010-08-04
申请人： Jung-Ryun Lee , Hyun-Ho Choi , Hyun-Sik Kang , Oh-Young Song
发明人： Jung-Ryun Lee , Hyun-Ho Choi , Hyun-Sik Kang , Oh-Young Song
IPC分类号： H04W36/00
CPC分类号： H04W36/30 , H04W36/14 , H04W36/36
摘要： A mobile terminal and a handover method for the mobile terminal are disclosed. A mobile terminal according to an embodiment of the invention may include a control unit configured to control the mobile terminal to perform a handover to a base station based on at least one of an on-off traffic characteristic of downlink data received from the base station and an on-off traffic characteristic of uplink data transmitted to the base station. When certain aspects of the invention are applied, the amount of data loss during a handover can be minimized.
摘要翻译：公开了一种用于移动终端的移动终端和切换方法。根据本发明的实施例的移动终端可以包括：控制单元，被配置为基于从基站接收的下行链路数据的开 - 关业务特性中的至少一个来控制移动终端执行到基站的切换;以及发送到基站的上行链路数据的开关流量特性。当应用本发明的某些方面时，可以最小化切换期间的数据丢失量。

6. 发明申请

US20110183671A1 MOBILE TERMINAL AND HANDOVER METHOD FOR THE MOBILE TERMINAL 有权
标题翻译：移动终端的移动终端和切换方法
公开(公告)号：US20110183671A1
公开(公告)日：2011-07-28
申请号：US12849961
申请日：2010-08-04
申请人： Jung-Ryun Lee , Hyun-Ho Choi , Hyun-Sik Kang , Oh-Young Song
发明人： Jung-Ryun Lee , Hyun-Ho Choi , Hyun-Sik Kang , Oh-Young Song
IPC分类号： H04W36/00
CPC分类号： H04W36/30 , H04W36/14 , H04W36/36
摘要： A mobile terminal and a handover method for the mobile terminal are disclosed. A mobile terminal according to an embodiment of the invention may include a control unit configured to control the mobile terminal to perform a handover to a base station based on at least one of an on-off traffic characteristic of downlink data received from the base station and an on-off traffic characteristic of uplink data transmitted to the base station. When certain aspects of the invention are applied, the amount of data loss during a handover can be minimized.
摘要翻译：公开了一种用于移动终端的移动终端和切换方法。根据本发明的实施例的移动终端可以包括：控制单元，被配置为基于从基站接收的下行链路数据的开 - 关业务特性中的至少一个来控制移动终端执行到基站的切换;以及发送到基站的上行链路数据的开关流量特性。当应用本发明的某些方面时，可以最小化切换期间的数据丢失量。

7. 发明申请

US20100214831A1 Memory device, memory system having the same, and programming method of a memory cell 审中-公开
标题翻译：存储器件，具有相同的存储器系统以及存储器单元的编程方法
公开(公告)号：US20100214831A1
公开(公告)日：2010-08-26
申请号：US12588536
申请日：2009-10-19
申请人： Ho-Jung Kim , Chul-Woo Park , Sang-Beom Kang , Hyun-Ho Choi
发明人： Ho-Jung Kim , Chul-Woo Park , Sang-Beom Kang , Hyun-Ho Choi
IPC分类号： G11C11/00 , G11C8/00 , G11C7/10 , G11C7/00
CPC分类号： G11C13/0064 , G11C11/56 , G11C11/5678 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0061 , G11C13/0069 , G11C2013/0076 , G11C2013/0088 , G11C2013/0092 , G11C2211/5622 , G11C2211/5642 , G11C2213/72 , G11C2213/79
摘要： A memory device includes an array of resistance change memory cells divided into a first memory block including a first selected memory cell of a first plurality of memory cells and a second memory block including a second selected memory cell of a second plurality of memory cells, and sensing and writing circuitry configured to simultaneously activate a line connected with the first and second selected memory cells. The first and second selected memory cells may be written by iteratively applying a level-controlled write signal to memory cells not having a programmed state equal to the write data until a verify-read operation indicates respective programmed states for the first and second selected memory cells are equal to the write data.
摘要翻译：存储器件包括被分成包括第一多个存储器单元的第一选定存储单元的第一存储器单元和包括第二多个存储器单元的第二选定存储单元的第二存储器块的电阻变化存储器单元阵列，以及感测和写入电路，其被配置为同时激活与第一和第二选定存储单元相连的线。第一和第二选择的存储器单元可以通过迭代地将电平控制的写入信号施加到不具有等于写入数据的编程状态的存储器单元来写入，直到验证读取操作指示第一和第二选择的存储单元的相应的编程状态等于写入数据。

8. 发明授权

US08670269B2 Resistive memory device and method of writing data using multi-mode switching current 有权
标题翻译：电阻式存储器件及使用多模切换电流写入数据的方法
公开(公告)号：US08670269B2
公开(公告)日：2014-03-11
申请号：US13609330
申请日：2012-09-11
申请人： Oh-Seong Kwon , Jin-Hyun Kim , Hyun-Ho Choi
发明人： Oh-Seong Kwon , Jin-Hyun Kim , Hyun-Ho Choi
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C29/50008 , G11C11/16 , G11C13/00
摘要： A method of writing data in a resistive memory device includes performing a test operation to distinguish normal memory cells from weak memory cells, during a write operation directed to normal memory cells using a write current and during a weak write operation directed to weak memory cells using a higher write current.
摘要翻译：在电阻式存储器件中写入数据的方法包括在使用写入电流对正常存储器单元的写入操作期间以及在针对弱存储器单元的弱写入操作期间执行使用以区分正常存储器单元与弱存储器单元的测试操作，写入电流较高。

9. 发明授权

US08194492B2 Variable resistance memory device and system 有权
标题翻译：可变电阻存储器件和系统
公开(公告)号：US08194492B2
公开(公告)日：2012-06-05
申请号：US12693005
申请日：2010-01-25
申请人： Qi Wang , Kwang-Jin Lee , Woo-Yeong Cho , Taek-Sung Kim , Kwang-Ho Kim , Hyun-Ho Choi , Yong-Jun Lee , Hye-Jin Kim
发明人： Qi Wang , Kwang-Jin Lee , Woo-Yeong Cho , Taek-Sung Kim , Kwang-Ho Kim , Hyun-Ho Choi , Yong-Jun Lee , Hye-Jin Kim
IPC分类号： G11C8/00
CPC分类号： G11C8/12 , G11C11/005 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/0023 , G11C13/0028 , G11C13/0069 , G11C16/0483 , G11C2013/0078 , G11C2213/71
摘要： Disclosed is a semiconductor memory device including a memory cell array having a plurality of variable resistance memory cells divided into first and second areas. An I/O circuit is configured to access the memory cell array under the control of control logic so as to access the first or second area in response to an external command. The I/O circuit accesses the first area using a memory cell unit and the second area using a page unit.
摘要翻译：公开了一种半导体存储器件，包括具有分成第一和第二区域的多个可变电阻存储器单元的存储单元阵列。 I / O电路被配置为在控制逻辑的控制下访问存储单元阵列，以响应于外部命令访问第一或第二区域。 I / O电路使用存储单元单元访问第一区域，并且使用页面单元访问第二区域。

10. 发明申请

US20080156884A1 Memory card having double contact pads and method for manufacturing the same 审中-公开
标题翻译：具有双接触垫的存储卡及其制造方法
公开(公告)号：US20080156884A1
公开(公告)日：2008-07-03
申请号：US11784092
申请日：2007-04-05
申请人： Hyun-Ho Choi , Jong-Woon Kim
发明人： Hyun-Ho Choi , Jong-Woon Kim
IPC分类号： G06K21/06
CPC分类号： G06K19/077 , G06K19/07732 , Y10T29/49117
摘要： A memory card is configured for insertion into a data reproducing apparatus. The memory card comprises a plurality of first contact pads on a first surface of the memory card configured to contact a plurality of contact terminals of the data reproducing apparatus; and a plurality of second contact pads on a second surface of the memory card configured to contact the plurality of contact terminals of the data reproducing apparatus, each one of the plurality of second contact pads being electrically connected to a corresponding one of the plurality of first contact pads. The memory card is configured for insertion into the data reproducing apparatus and for operation therewith, regardless of which of the first and second surfaces and corresponding contact pads are positioned to face the plurality of contact terminals of the data reproducing apparatus when the memory card is inserted into a data reproducing apparatus.
摘要翻译：存储卡被配置为插入到数据再现装置中。存储卡包括存储卡的第一表面上的多个第一接触焊盘，其被配置为接触数据再现设备的多个接触端子; 以及在所述存储卡的第二表面上的多个第二接触焊盘，被配置为接触所述数据再现装置的所述多个接触端子，所述多个第二接触焊盘中的每一个电连接到所述多个第一接触焊盘中的相应一个接触垫存储卡被配置为插入数据再现装置并与其一起操作，而不管第一和第二表面和对应的接触垫中的哪一个被定位成当插入存储卡时面向数据再现装置的多个接触端子进入数据再现装置。

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