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    • 2. 发明授权
    • Nonvolatile memory device and method for controlling word line or bit line thereof
    • 用于控制字线或其位线的非易失性存储器件和方法
    • US08305806B2
    • 2012-11-06
    • US12659690
    • 2010-03-17
    • Joon-Yong ChoiByunggil ChoiYu Hwan RoYong-Jun Lee
    • Joon-Yong ChoiByunggil ChoiYu Hwan RoYong-Jun Lee
    • G11C16/04
    • G11C16/08
    • A nonvolatile memory device includes global selection lines, local selection lines, a first selection circuit, and a second selection circuit. The local lines correspond respectively to the global selection lines. The first selection circuit is configured to connect to the global selection lines to select the global selection lines. The second selection circuit is connected between the global selection lines and the local selection lines and is configured to select the local selection lines. The first selection circuit is configured to select at least one global selection line, and the second selection circuit is configured to select the local selection lines corresponding to the selected global selection line while the at least one global selection line is continuously activated.
    • 非易失性存储器件包括全局选择线,局部选择线,第一选择电路和第二选择电路。 本地线分别对应于全局选择线。 第一选择电路被配置为连接到全局选择线以选择全局选择线。 第二选择电路连接在全局选择线和本地选择线之间,并被配置为选择本地选择线。 第一选择电路被配置为选择至少一个全局选择线,并且第二选择电路被配置为在连续激活至少一个全局选择线的同时选择与所选择的全局选择线对应的本地选择线。