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1. 发明授权

US07250391B2 Cleaning composition for removing resists and method of manufacturing semiconductor device 失效
标题翻译：用于除去抗蚀剂的清洁组合物和制造半导体器件的方法
公开(公告)号：US07250391B2
公开(公告)日：2007-07-31
申请号：US10617128
申请日：2003-07-11
申请人： Itaru Kanno , Yasuhiro Asaoka , Masahiko Higashi , Yoshiharu Hidaka , Etsuro Kishio , Tetsuo Aoyama , Tomoko Suzuki , Toshitaka Hiraga , Toshihiko Nagai
发明人： Itaru Kanno , Yasuhiro Asaoka , Masahiko Higashi , Yoshiharu Hidaka , Etsuro Kishio , Tetsuo Aoyama , Tomoko Suzuki , Toshitaka Hiraga , Toshihiko Nagai
IPC分类号： C11D7/50
CPC分类号： H01L21/02063 , G03F7/423 , G03F7/425 , H01L21/31116 , H01L21/76807 , H01L21/76814 , H01L21/76831 , H01L21/76838
摘要： The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one organic acid or inorganic acid (C component), water (D component), and, optionally, an ammonium salt (E1 component), and having a pH 4-8. Thus, in manufacturing a semiconductor device, such as a copper interconnecting process, efficiency of removing resist residue and other etching residue after etching or ashing is improved, and corrosion resistance of a copper and an insulating film is also improved.
摘要翻译：用于除去抗蚀剂的清洁组合物包括氢氟酸盐和不含金属的基质（A组分），水溶性有机溶剂（B1组分），至少一种有机酸或无机酸（C组分），水（ D成分）和任选的铵盐（E1成分），pH4〜8。因此，在制造诸如铜互连工艺的半导体器件时，蚀刻或灰化后除去抗蚀剂残留物和其它蚀刻残留物的效率提高，铜和绝缘膜的耐腐蚀性也得到改善。

2. 发明申请

US20100178764A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20100178764A1
公开(公告)日：2010-07-15
申请号：US12686841
申请日：2010-01-13
申请人： Kenji NARITA , Yoshiharu Hidaka , Koji Utaka , Takao Yamaguchi , Itaru Kanno , Hirokazu Kurisu
发明人： Kenji NARITA , Yoshiharu Hidaka , Koji Utaka , Takao Yamaguchi , Itaru Kanno , Hirokazu Kurisu
IPC分类号： H01L21/3205
CPC分类号： H01L21/2855 , H01L21/02068 , H01L21/28518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A method for fabricating a semiconductor device, includes the steps of (a) forming a metal film containing a precious metal on a substrate having a semiconductor layer containing silicon or on a conductive film containing silicon formed on the substrate, (b) after step (a), heat-treating the substrate to allow the precious metal to react with silicon to form a silicide film containing the precious metal on the substrate or the conductive film, (c) after step (b), forming an oxide film on a portion of the silicide film underlying an unreacted portion of the precious metal using a first chemical solution, and (d) dissolving the unreacted portion of the precious metal using a second chemical solution.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：（a）在具有含硅的半导体层的基板上或在基板上形成含有硅的导电膜上形成含有贵金属的金属膜，（b）在步骤 a），对基材进行热处理以使贵金属与硅反应以在基材或导电膜上形成含有贵金属的硅化物膜，（c）在步骤（b）之后，在一部分上形成氧化膜使用第一化学溶液在贵金属的未反应部分下面的硅化物膜，和（d）使用第二化学溶液溶解贵金属的未反应部分。

3. 发明申请

US20100330794A1 METHOD FOR CLEANING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：清洁半导体器件的方法
公开(公告)号：US20100330794A1
公开(公告)日：2010-12-30
申请号：US12819675
申请日：2010-06-21
申请人： Hirokazu KURISU , Yutaka Takeshima , Itaru Kanno , Masahiko Higashi , Yusaku Hirota
发明人： Hirokazu KURISU , Yutaka Takeshima , Itaru Kanno , Masahiko Higashi , Yusaku Hirota
IPC分类号： H01L21/28 , H01L21/306
CPC分类号： H01L21/02063 , H01L21/28518 , H01L21/76831 , H01L21/76895
摘要： There is provided a method for cleaning a semiconductor device capable of making compatible the inhibition of dissolution of a gate metal material and the acquisition of a favorable contact resistance. A method for cleaning a semiconductor device includes steps: a semiconductor substrate including silicon, and having a main surface is prepared; a multilayer gate including a metal layer and a silicon layer stacked sequentially from the bottom is formed over the main surface; a silicide layer is formed over the main surface and the silicon layer surface; an insulation layer is formed over the silicide layer in each of the main surface and the multilayer gate surface; a shared contact hole is formed in the insulation layer in such a manner that the silicide layer in the main surface of the semiconductor substrate and the surface of the multilayer gate is exposed from the insulation layer; and the shared contact hole is subjected to sulfuric acid cleaning, aqueous hydrogen peroxide cleaning, and APM cleaning separately, respectively, thereby to remove an altered layer formed in the shared contact hole.
摘要翻译：提供了一种能够使与栅极金属材料的溶解的抑制兼容并且获得良好的接触电阻的半导体器件的清洁方法。一种清洗半导体器件的方法，包括步骤：制备包括硅并具有主表面的半导体衬底; 在主表面上形成包括从底部依次堆叠的金属层和硅层的多层栅极; 在主表面和硅层表面上形成硅化物层; 在主表面和多层栅极表面中的每一个中的硅化物层上形成绝缘层; 在绝缘层中形成共享接触孔，使得半导体衬底的主表面中的硅化物层和多层栅极的表面从绝缘层露出; 分别对共用接触孔进行硫酸清洗，过氧化氢水清洗和APM清洗，从而除去形成在共用接触孔中的变化层。

4. 发明申请

US20070099406A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20070099406A1
公开(公告)日：2007-05-03
申请号：US11551861
申请日：2006-10-23
申请人： Masahiko Higashi , Satoshi Kume , Jiro Yugami , Shinichi Yamanari , Takahiro Maruyama , Itaru Kanno
发明人： Masahiko Higashi , Satoshi Kume , Jiro Yugami , Shinichi Yamanari , Takahiro Maruyama , Itaru Kanno
IPC分类号： H01L21/3205 , H01L21/4763 , H01L21/336
CPC分类号： H01L21/32134 , H01L21/28079 , H01L21/823842 , H01L21/82385 , H01L29/4958
摘要： In a semiconductor device manufacturing method of the invention, a metal film, for forming a gate electrode, is formed on a gate insulating film. Subsequently, when the metal film is processed, part of the metal film is removed by a wet etching process using a given chemical liquid.
摘要翻译：在本发明的半导体器件制造方法中，在栅极绝缘膜上形成用于形成栅电极的金属膜。随后，当处理金属膜时，通过使用给定的化学液体的湿蚀刻工艺去除部分金属膜。

5. 发明授权

US07537987B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US07537987B2
公开(公告)日：2009-05-26
申请号：US11551861
申请日：2006-10-23
申请人： Masahiko Higashi , Satoshi Kume , Jiro Yugami , Shinichi Yamanari , Takahiro Maruyama , Itaru Kanno
发明人： Masahiko Higashi , Satoshi Kume , Jiro Yugami , Shinichi Yamanari , Takahiro Maruyama , Itaru Kanno
IPC分类号： H01L21/84
CPC分类号： H01L21/32134 , H01L21/28079 , H01L21/823842 , H01L21/82385 , H01L29/4958
摘要： In a semiconductor device manufacturing method of the invention, a metal film, for forming a gate electrode, is formed on a gate insulating film. Subsequently, when the metal film is processed, part of the metal film is removed by a wet etching process using a given chemical liquid.
摘要翻译：在本发明的半导体器件制造方法中，在栅极绝缘膜上形成用于形成栅电极的金属膜。随后，当处理金属膜时，通过使用给定的化学液体的湿蚀刻工艺去除部分金属膜。

6. 发明授权

US06199567B1 Method and apparatus for manufacturing semiconductor device 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US06199567B1
公开(公告)日：2001-03-13
申请号：US08772632
申请日：1996-12-23
申请人： Itaru Kanno , Tetsuo Aoyama , Mayumi Hada
发明人： Itaru Kanno , Tetsuo Aoyama , Mayumi Hada
IPC分类号： B08B310
CPC分类号： H01L21/02071 , B08B3/12 , H01L21/32136 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S134/902
摘要： In a method of manufacturing a semiconductor device including a capacitor, a refractory metal layer is dry-etched using a resist pattern as a mask, whereby a first electrode pattern formed of refractory metal is provided. Sidewall of the first electrode pattern is cleaned using aqueous solution of a surface active agent. Through this procedure, etching residue formed on the sidewall of the electrode pattern is removed when the electrode pattern of refractory metal is produced through dry etching method.
摘要翻译：在制造包括电容器的半导体器件的方法中，使用抗蚀剂图案作为掩模对难熔金属层进行干蚀刻，从而提供由难熔金属形成的第一电极图案。使用表面活性剂的水溶液清洁第一电极图案的侧壁。通过这种方法，当通过干蚀刻法制造难熔金属的电极图案时，去除在电极图案的侧壁上形成的蚀刻残留物。

7. 发明授权

US08946895B2 Semiconductor device, manufacturing method of semiconductor device, semiconductor manufacturing and inspecting apparatus, and inspecting apparatus 有权
标题翻译：半导体装置，半导体装置的制造方法，半导体制造和检查装置以及检查装置
公开(公告)号：US08946895B2
公开(公告)日：2015-02-03
申请号：US12389479
申请日：2009-02-20
申请人： Takahiko Kato , Hiroshi Nakano , Haruo Akahoshi , Yuuji Takada , Yoshimi Sudo , Tetsuo Fujiwara , Itaru Kanno , Tomoryo Shono , Yukinori Hirose
发明人： Takahiko Kato , Hiroshi Nakano , Haruo Akahoshi , Yuuji Takada , Yoshimi Sudo , Tetsuo Fujiwara , Itaru Kanno , Tomoryo Shono , Yukinori Hirose
IPC分类号： H01L23/48 , H01L23/532 , H01L21/768
CPC分类号： H01L22/12 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L21/76879 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having Cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 27 or less to all crystal grain boundaries of a Cu wiring to 60% or higher. Alternatively, a similar effect of surface void reduction can be obtained by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 3 to all crystal grain boundaries of a Cu wiring to 40% or higher.
摘要翻译：具有包括可以减小表面空隙的碱性晶体结构的Cu布线的半导体器件和用于半导体器件的检查技术。在半导体装置中，通过指定阻挡层和种子层，并设定具有一致位点网格（CSL）边界的占有比例（频率），表面空隙可以降低到当前实用水平的1/10以下，具有对于Cu布线的所有晶界，晶界Sigma值为27以下，为60％以上。或者，可以通过指定阻挡层和种子层并且将具有晶界Sigma值3的重合位点晶格（CSL）边界的占有比例（频率）设置为全部晶粒，可以获得类似的表面空隙降低效果 Cu布线的边界为40％以上。

8. 发明授权

US08569136B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08569136B2
公开(公告)日：2013-10-29
申请号：US13438972
申请日：2012-04-04
申请人： Itaru Kanno
发明人： Itaru Kanno
IPC分类号： H01L21/8234
CPC分类号： H01L21/823468 , H01L21/823418 , H01L21/823814 , H01L21/823864 , H01L29/6653
摘要： A manufacturing method of a semiconductor device is provided which can improve the performance of the semiconductor device. Ion implantation is applied to nMIS regions 1A and 1B and pMIS regions 1C and 1D of a semiconductor substrate 1 with offset spacers formed over sidewalls of gate electrodes GE1, GE2, GE3, and GE4 to thereby form extension regions for source and drain. In this case, a different photoresist pattern is used for each of the nMIS regions 1A and 1B and the pMIS regions 1C and 1D to individually perform the corresponding ion implantation. Every time the photoresist pattern is re-created, the offset spacer is also re-created.
摘要翻译：提供一种可以提高半导体器件的性能的半导体器件的制造方法。将离子注入施加到半导体衬底1的nMIS区域1A和1B以及pMIS区域1C和1D，其中半导体衬底1具有形成在栅电极GE1，GE2，GE3和GE4的侧壁上的偏移间隔物，从而形成用于源极和漏极的延伸区域。在这种情况下，对于nMIS区域1A和1B以及pMIS区域1C和1D中的每一个使用不同的光致抗蚀剂图案来单独执行相应的离子注入。每次重新制造光致抗蚀剂图案时，也重新创建偏移间隔物。

9. 发明申请

US20070141849A1 Two-fluid nozzle for cleaning substrate and substrate cleaning apparatus 有权
标题翻译：用于清洁基板和基板清洁装置的双流体喷嘴
公开(公告)号：US20070141849A1
公开(公告)日：2007-06-21
申请号：US10591474
申请日：2005-03-09
申请人： Itaru Kanno , Yusaku Hirota , Kenji Sekiguchi , Hiroshi Nagayasu , Shouichi Shimose
发明人： Itaru Kanno , Yusaku Hirota , Kenji Sekiguchi , Hiroshi Nagayasu , Shouichi Shimose
IPC分类号： B08B3/00 , B41J2/05 , H01L21/302
CPC分类号： H01L21/67051 , B01F3/04049 , B05B7/0433 , B08B3/02 , Y10S134/902
摘要： An object of the present is to uniform particle diameters and speeds of liquid droplets in a two-fluid nozzle for cleaning substrates which mixes gas and liquid internally and injects liquid droplets with gas so as to clean a substrate. The two-fluid nozzle for cleaning substrates has a gas supply passage for supplying gas, a liquid supply passage for supplying liquid, and a lead-out passage for leading out internally-formed liquid droplets, wherein an injection port for injecting liquid droplets to the outside is formed at the front end of the lead-out passage, and wherein a cross-sectional area Sb of the injection port is formed smaller than a cross-sectional area Sa of the lead-out passage, and a cross sectional area Sc of an exit of the gas supply passage is formed smaller than the cross-sectional area Sa of the lead-out passage.
摘要翻译：本发明的目的是在二流体喷嘴中用于清洁衬底的液滴的均匀的粒子直径和速度，这些衬底在内部混合气体和液体，并且用气体注入液滴以便清洁衬底。用于清洁基板的双流体喷嘴具有用于供应气体的气体供应通道，用于供应液体的液体供应通道和用于引出内部形成的液滴的引出通道，其中用于将液滴注入到喷嘴外部形成在引出通道的前端，并且其中注入口的横截面面积Sb形成为小于引出通道的横截面积Sa，横截面面积Sc 气体供给通道的出口形成为小于引出通道的横截面面积Sa。

10. 发明授权

US06730239B1 Cleaning agent for semiconductor device & method of fabricating semiconductor device 失效
标题翻译：半导体装置用清洗剂及半导体装置的制造方法
公开(公告)号：US06730239B1
公开(公告)日：2004-05-04
申请号：US09678793
申请日：2000-10-04
申请人： Itaru Kanno , Naoki Yokoi , Hiroshi Morita , Naoki Ichiki , Hideaki Nezu , Masayuki Takashima
发明人： Itaru Kanno , Naoki Yokoi , Hiroshi Morita , Naoki Ichiki , Hideaki Nezu , Masayuki Takashima
IPC分类号： C09K1300
CPC分类号： H01L21/02071 , C09K13/02 , C11D1/44 , C11D1/722 , C11D3/044 , C11D11/0047 , H01L21/02052 , H01L21/31116
摘要： A cleaning agent for a semiconductor device contains a hydroxide, water and a compound expressed in the following general formula (I) and/or the following general formula (II): HO—((EO)x—(PO)y)z—H (I) R—[(EO)x—(PO)y)z—H]m (II) Thus provided is a cleaning agent for a semiconductor device, which is so improved as not to disconnect a wire or an embedded conductive layer.
摘要翻译：用于半导体器件的清洁剂包含氢氧化物，水和由以下通式（I）和/或以下通式（II）表示的化合物：因此提供了一种如此改进的半导体器件用清洁剂不要断开电线或嵌入式导电层。

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