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1. 发明申请

US20050014667A1 Aqueous fluoride compositions for cleaning semiconductor devices 失效
标题翻译：氟化物组合物，用于清洁半导体器件
公开(公告)号：US20050014667A1
公开(公告)日：2005-01-20
申请号：US10826319
申请日：2004-04-19
申请人： Tetsuo Aoyama , Toshitaka Hiraga , Tomoko Suzuki
发明人： Tetsuo Aoyama , Toshitaka Hiraga , Tomoko Suzuki
IPC分类号： C11D7/08 , C11D7/10 , C11D7/26 , C11D7/28 , C11D7/32 , C11D7/50 , C11D11/00 , G03F7/42 , H01L21/02 , H01L21/306 , H01L21/311 , H01L21/768 , C11D1/00
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/263 , C11D7/28 , C11D7/3218 , C11D7/3263 , C11D7/5013 , C11D11/0047 , G03F7/423 , G03F7/425 , H01L21/31116 , H01L21/31133 , H01L21/76802 , H01L21/76814
摘要： The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.
摘要翻译：本发明涉及稀释氟化物溶液以及用于从包括这种稀溶液的半导体衬底清洗等离子体蚀刻残留物的方法。根据本发明的组合物和方法可以有利地提供清洁效率和材料相容性。

2. 发明授权

US06686322B1 Cleaning agent and cleaning process using the same 有权
标题翻译：清洁剂和清洁工艺使用相同
公开(公告)号：US06686322B1
公开(公告)日：2004-02-03
申请号：US09581118
申请日：2000-08-28
申请人： Masahiro Nohara , Ryou Hashimoto , Taimi Oketani , Hisaki Abe , Taketo Maruyama , Tetsuo Aoyama
发明人： Masahiro Nohara , Ryou Hashimoto , Taimi Oketani , Hisaki Abe , Taketo Maruyama , Tetsuo Aoyama
IPC分类号： C11D942
CPC分类号： H01L21/02071 , C03C23/0075 , C11D3/3947 , C11D7/08 , C11D7/3245 , C11D7/36 , C11D11/0047 , C23G1/24 , G02F1/13439 , G03F7/423 , H01L21/0273 , H01L21/31116
摘要： A cleaning agent which comprises 0.1 to 60% by weight of an oxidizing agent and 0.0001 to 5% by weight of a chelating agent. In the process for producing semiconductor integrated circuits, a pattern layer of a photoresist used as an etching mask and residues formed from the photoresist by dry etching can be easily removed with the cleaning agent. In the process for producing substrates for liquid crystal display panels, residues derived from a conductive thin film formed by dry etching can also be easily removed. In the cleaning processes using the cleaning agent, wiring materials or insulating materials in thin film circuit devices or other materials used for producing substrates of semiconductor integrated circuits and liquid crystal panels are not corroded.
摘要翻译：一种清洁剂，其包含0.1至60重量％的氧化剂和0.0001至5重量％的螯合剂。在制造半导体集成电路的过程中，可以容易地用清洁剂去除用作蚀刻掩模的光致抗蚀剂的图案层和由干蚀刻形成的残留物。在液晶显示面板用基板的制造方法中，也可以容易地除去由干蚀刻形成的导电薄膜得到的残留物。在使用清洁剂的清洁方法中，薄膜电路器件中的配线材料或绝缘材料或用于制造半导体集成电路和液晶面板的基板的其它材料不被腐蚀。

3. 发明授权

US06440326B1 Photoresist removing composition 有权
标题翻译：光刻胶去除组合物
公开(公告)号：US06440326B1
公开(公告)日：2002-08-27
申请号：US09524499
申请日：2000-03-13
申请人： Taketo Maruyama , Hisaki Abe , Tetsuya Karita , Tetsuo Aoyama
发明人： Taketo Maruyama , Hisaki Abe , Tetsuya Karita , Tetsuo Aoyama
IPC分类号： C09K1300
CPC分类号： C23G1/061 , G03F7/425 , H01L21/31133
摘要： A resist removing composition comprising a quaternary ammonium hydroxide, a water-soluble amine, an alkylpyrrolidone and a sugar or sugar alcohol. The photoresist removing composition can easily remove (i) a photoresist layer applied onto an inorganic substrate, (ii) a remaining photoresist layer after dry etching or (iii) a photoresist residue after ashing, at a low temperature in a short time, and also enables hyperfine processing of a wiring pattern material to manufacture a high precision circuit pattern without corroding the material.
摘要翻译：一种抗蚀剂去除组合物，其包含季铵氢氧化物，水溶性胺，烷基吡咯烷酮和糖或糖醇。光致抗蚀剂去除组合物可以容易地除去（i）施加到无机基材上的光致抗蚀剂层，（ii）在干蚀刻之后残留的光致抗蚀剂层，或（iii）灰化后的光致抗蚀剂残留物，在短时间内在低温下，以及使得布线图案材料的超精细加工能够制造高精度的电路图案而不会腐蚀材料。

4. 发明授权

US5972862A Cleaning liquid for semiconductor devices 失效
标题翻译：半导体器件清洗液
公开(公告)号：US5972862A
公开(公告)日：1999-10-26
申请号：US901475
申请日：1997-07-28
申请人： Yoshimi Torii , Shunji Sasabe , Masayuki Kojima , Kazuhisa Usuami , Takafumi Tokunaga , Kazusato Hara , Yoshikazu Ohira , Tsuyoshi Matsui , Hideto Gotoh , Tetsuo Aoyama , Ryuji Hasemi , Hidetoshi Ikeda , Fukusaburo Ishihara , Ryuji Sotoaka
发明人： Yoshimi Torii , Shunji Sasabe , Masayuki Kojima , Kazuhisa Usuami , Takafumi Tokunaga , Kazusato Hara , Yoshikazu Ohira , Tsuyoshi Matsui , Hideto Gotoh , Tetsuo Aoyama , Ryuji Hasemi , Hidetoshi Ikeda , Fukusaburo Ishihara , Ryuji Sotoaka
IPC分类号： C11D7/60 , G03F7/42 , H01L21/02 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/3213 , C11D1/62 , C11D3/44 , C11D7/08
CPC分类号： H01L21/02071 , G03F7/423 , G03F7/425 , H01L21/02063 , Y10S438/974
摘要： There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.
摘要翻译：公开了一种用于制造半导体器件的清洗液，其包含（A）含氟化合物; （B）水溶性或水混溶性有机溶剂; 和（C）无机酸和/或有机酸，任选地还包含（D）季铵盐或（D'）特定的有机羧酸铵盐和/或有机羧酸胺盐; 以及通过在表面上配置有绝缘膜层或金属导电层的基板上形成抗蚀剂图案来制造半导体器件的方法，通过干蚀刻形成通孔或电布线，通过灰化除去抗蚀剂图案用氧等离子体处理; 并用上述清洗液进行清洗处理。上述清洗液和制造方法可以容易地除去在干蚀刻的情况下形成的沉积聚合物，而不损害金属膜和绝缘膜。

5. 发明授权

US5962385A Cleaning liquid for semiconductor devices 有权
标题翻译：半导体器件清洗液
公开(公告)号：US5962385A
公开(公告)日：1999-10-05
申请号：US133627
申请日：1998-08-13
申请人： Taketo Maruyama , Ryuji Hasemi , Hidetoshi Ikeda , Tetsuo Aoyama
发明人： Taketo Maruyama , Ryuji Hasemi , Hidetoshi Ikeda , Tetsuo Aoyama
IPC分类号： G03F7/42 , H01L21/02 , H01L21/027 , H01L21/304 , H01L21/3213 , C09K13/00 , C11D7/50
CPC分类号： H01L21/02071
摘要： A cleaning liquid for semiconductor devices comprising 1.0 to 5% by weight of a fluorine compound of the formula R.sub.4 NF, wherein R is a hydrogen atom or a C.sub.1 -C.sub.4 alkyl group, 72 to 80% by weight of an organic solvent soluble in water, and the remaining amount being water. The cleaning liquid can rapidly and completely at a low temperature remove resist residues left remaining after dry etching and ashing in the wiring step in the production of semiconductor integrated circuits, and the cleaning liquid does not corrode wiring materials.
摘要翻译：一种半导体器件用清洗液，其含有1.0〜5重量％的式R4NF的氟化合物，其中R为氢原子或C1-C4烷基，72〜80重量％的可溶于水的有机溶剂，余量为水。在半导体集成电路的制造中，清洗液能够在低温下快速且完全地除去在干法蚀刻和布线步骤中残留残留的抗蚀剂残留物，并且清洗液体不会腐蚀布线材料。

6. 发明授权

US5693599A Flux washing agent 失效
标题翻译：助焊剂清洗剂
公开(公告)号：US5693599A
公开(公告)日：1997-12-02
申请号：US625835
申请日：1996-04-01
申请人： Tetsuo Aoyama , Toshio Kondoh , Toshihiko Kobayashi , Kaoru Tsuyuki
发明人： Tetsuo Aoyama , Toshio Kondoh , Toshihiko Kobayashi , Kaoru Tsuyuki
IPC分类号： C11D7/32 , C11D7/50 , H05K3/26 , C11D1/62
CPC分类号： C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/5013 , H05K3/26
摘要： A flux washing agent which comprises an aqueous solution containing a quaternary ammonium salt and hydrazine is disclosed. The flux washing agent is used in the production of printed circuit boards and the like. The flux washing agent has a washing ability, and a property to suppress etching of solder which are comparable with those of Flon 113 and trichloroethylene heretofore used as flux washing agents. Furthermore, the flux washing agent is safe, does not cause environmental pollution and has an excellent rinsing property.
摘要翻译：公开了包含含有季铵盐和肼的水溶液的助焊剂洗涤剂。焊剂清洗剂用于生产印刷电路板等。助焊剂洗涤剂具有洗涤能力和抑制焊料蚀刻的性能，其与以前用作助熔剂洗涤剂的Flon 113和三氯乙烯相当。此外，助焊剂洗涤剂是安全的，不会引起环境污染并且具有优异的漂洗性能。

7. 发明授权

US5242879A Active carbon materials, process for the preparation thereof and the use thereof 失效
标题翻译：活性炭材料，其制备方法及其用途
公开(公告)号：US5242879A
公开(公告)日：1993-09-07
申请号：US805174
申请日：1991-12-11
申请人： Hisaki Abe , Toshio Kondoh , Hideki Fukuda , Mayumi Takahashi , Tetsuo Aoyama , Masahiro Miyake
发明人： Hisaki Abe , Toshio Kondoh , Hideki Fukuda , Mayumi Takahashi , Tetsuo Aoyama , Masahiro Miyake
IPC分类号： B01J20/20 , B01J21/18 , C01B31/08
CPC分类号： C01B31/081 , B01J20/20 , B01J21/18
摘要： The present invention relates to specific activated carbon materials including from 1 to 5% by weight of nitrogen, from 3 to 30% by weight of oxygen and from 40 to 95% by weight of carbon, and having an average pore radius of from 15 to 30 .ANG., with the proviso that mesopores occupy at least 50% by volume based on the total pore volume, and also relates a process for the preparation thereof, and to the use thereof as catalysts.

8. 发明授权

US4094905A Process for producing dimethyl formamide 失效
标题翻译：二甲基甲酰胺的制备方法
公开(公告)号：US4094905A
公开(公告)日：1978-06-13
申请号：US802524
申请日：1977-06-01
申请人： Kinichi Mizuno , Masao Saito , Yuzi Onda , Tetsuo Aoyama , Kumiko Kato
发明人： Kinichi Mizuno , Masao Saito , Yuzi Onda , Tetsuo Aoyama , Kumiko Kato
IPC分类号： C07B61/00 , B01J21/00 , B01J27/00 , B01J31/00 , C07C67/00 , C07C231/00 , C07C231/08 , C07C231/10 , C07C233/00 , C07C233/03 , C07C102/00
CPC分类号： C07C231/00 , C07C233/00
摘要： Dimethyl formamide is produced in high yield with high selectivity by reaction of monomethyl formamide with trimethylamine and carbon monoxide in the presence of a catalyst such as halogen elements, halides, inorganic acids, solid acids and metal carbonyls at a temperature of 150.degree. to 300.degree. C under a pressure of 20 kg/cm.sup.2 gage or higher.
摘要翻译：在150〜300℃的温度下，在催化剂如卤素，卤化物，无机酸，固体酸和金属羰基化物的存在下，通过单甲基甲酰胺与三甲胺和一氧化碳的反应，可以高选择性生产二甲基甲酰胺。 C在20kg / cm2的压力或更高的压力下。

9. 发明授权

US08545716B2 Etching liquid composition 有权
标题翻译：蚀刻液组成
公开(公告)号：US08545716B2
公开(公告)日：2013-10-01
申请号：US12438143
申请日：2008-07-16
申请人： Tsuguhiro Tago , Tomotake Matsuda , Mayumi Kimura , Tetsuo Aoyama
发明人： Tsuguhiro Tago , Tomotake Matsuda , Mayumi Kimura , Tetsuo Aoyama
IPC分类号： C09K13/06
CPC分类号： H01L21/32134 , C23F1/20 , H01L21/32139
摘要： A metal film such as an aluminum film or an aluminum alloy film is etched with good controllability, preventing a resist from bleeding, to have a proper taper configuration and superior flatness.A water solution containing a phosphoric acid, a nitric acid, and an organic acid salt is used as an etching liquid composition used to etch the metal film on a substrate.The organic acid salt is composed of one kind selected from a group consisting of an aliphatic monocarboxylic acid, an aliphatic polycarboxylic acid, an aliphatic oxicarboxylic acid, an aromatic monocarboxylic acid, an aromatic polycarboxylic acid and an aromatic oxycarboxylic acid, and one kind selected from a group consisting of an ammonium salt, an amine salt, a quaternary ammonium salt, and an alkali metal salt.In addition, a concentration of the organic acid salt ranges from 0.1% to 20% by weight.In addition, the etching liquid composition according to the present invention is used when the metal film is formed of aluminum or an aluminum alloy.
摘要翻译：蚀刻具有良好可控性的铝膜或铝合金膜等金属膜，防止抗蚀剂渗色，具有适当的锥形构造和优异的平坦度。使用含有磷酸，硝酸和有机酸盐的水溶液作为用于蚀刻基板上的金属膜的蚀刻液组合物。有机酸盐由脂肪族一元羧酸，脂肪族多元羧酸，脂肪族二羧酸，芳香族单羧酸，芳香族多元羧酸，芳香族羟基羧酸等组成的组中选出的一种，由铵盐，胺盐，季铵盐和碱金属盐组成的组。另外，有机酸盐的浓度为0.1〜20重量％。此外，当金属膜由铝或铝合金形成时，使用根据本发明的蚀刻液组合物。

10. 发明授权

US07250391B2 Cleaning composition for removing resists and method of manufacturing semiconductor device 失效
标题翻译：用于除去抗蚀剂的清洁组合物和制造半导体器件的方法
公开(公告)号：US07250391B2
公开(公告)日：2007-07-31
申请号：US10617128
申请日：2003-07-11
申请人： Itaru Kanno , Yasuhiro Asaoka , Masahiko Higashi , Yoshiharu Hidaka , Etsuro Kishio , Tetsuo Aoyama , Tomoko Suzuki , Toshitaka Hiraga , Toshihiko Nagai
发明人： Itaru Kanno , Yasuhiro Asaoka , Masahiko Higashi , Yoshiharu Hidaka , Etsuro Kishio , Tetsuo Aoyama , Tomoko Suzuki , Toshitaka Hiraga , Toshihiko Nagai
IPC分类号： C11D7/50
CPC分类号： H01L21/02063 , G03F7/423 , G03F7/425 , H01L21/31116 , H01L21/76807 , H01L21/76814 , H01L21/76831 , H01L21/76838
摘要： The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one organic acid or inorganic acid (C component), water (D component), and, optionally, an ammonium salt (E1 component), and having a pH 4-8. Thus, in manufacturing a semiconductor device, such as a copper interconnecting process, efficiency of removing resist residue and other etching residue after etching or ashing is improved, and corrosion resistance of a copper and an insulating film is also improved.
摘要翻译：用于除去抗蚀剂的清洁组合物包括氢氟酸盐和不含金属的基质（A组分），水溶性有机溶剂（B1组分），至少一种有机酸或无机酸（C组分），水（ D成分）和任选的铵盐（E1成分），pH4〜8。因此，在制造诸如铜互连工艺的半导体器件时，蚀刻或灰化后除去抗蚀剂残留物和其它蚀刻残留物的效率提高，铜和绝缘膜的耐腐蚀性也得到改善。

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