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1. 发明申请

US20070141849A1 Two-fluid nozzle for cleaning substrate and substrate cleaning apparatus 有权
标题翻译：用于清洁基板和基板清洁装置的双流体喷嘴
公开(公告)号：US20070141849A1
公开(公告)日：2007-06-21
申请号：US10591474
申请日：2005-03-09
申请人： Itaru Kanno , Yusaku Hirota , Kenji Sekiguchi , Hiroshi Nagayasu , Shouichi Shimose
发明人： Itaru Kanno , Yusaku Hirota , Kenji Sekiguchi , Hiroshi Nagayasu , Shouichi Shimose
IPC分类号： B08B3/00 , B41J2/05 , H01L21/302
CPC分类号： H01L21/67051 , B01F3/04049 , B05B7/0433 , B08B3/02 , Y10S134/902
摘要： An object of the present is to uniform particle diameters and speeds of liquid droplets in a two-fluid nozzle for cleaning substrates which mixes gas and liquid internally and injects liquid droplets with gas so as to clean a substrate. The two-fluid nozzle for cleaning substrates has a gas supply passage for supplying gas, a liquid supply passage for supplying liquid, and a lead-out passage for leading out internally-formed liquid droplets, wherein an injection port for injecting liquid droplets to the outside is formed at the front end of the lead-out passage, and wherein a cross-sectional area Sb of the injection port is formed smaller than a cross-sectional area Sa of the lead-out passage, and a cross sectional area Sc of an exit of the gas supply passage is formed smaller than the cross-sectional area Sa of the lead-out passage.
摘要翻译：本发明的目的是在二流体喷嘴中用于清洁衬底的液滴的均匀的粒子直径和速度，这些衬底在内部混合气体和液体，并且用气体注入液滴以便清洁衬底。用于清洁基板的双流体喷嘴具有用于供应气体的气体供应通道，用于供应液体的液体供应通道和用于引出内部形成的液滴的引出通道，其中用于将液滴注入到喷嘴外部形成在引出通道的前端，并且其中注入口的横截面面积Sb形成为小于引出通道的横截面积Sa，横截面面积Sc 气体供给通道的出口形成为小于引出通道的横截面面积Sa。

2. 发明授权

US08037891B2 Two-fluid nozzle for cleaning substrate and substrate cleaning apparatus 有权
标题翻译：用于清洁基板和基板清洁装置的双流体喷嘴
公开(公告)号：US08037891B2
公开(公告)日：2011-10-18
申请号：US10591474
申请日：2005-03-09
申请人： Itaru Kanno , Yusaku Hirota , Kenji Sekiguchi , Hiroshi Nagayasu , Shouichi Shimose
发明人： Itaru Kanno , Yusaku Hirota , Kenji Sekiguchi , Hiroshi Nagayasu , Shouichi Shimose
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , B01F3/04049 , B05B7/0433 , B08B3/02 , Y10S134/902
摘要： An object of the present is to uniform particle diameters and speeds of liquid droplets in a two-fluid nozzle for cleaning substrates which mixes gas and liquid internally and injects liquid droplets with gas so as to clean a substrate. The two-fluid nozzle for cleaning substrates has a gas supply passage for supplying gas, a liquid supply passage for supplying liquid, and a lead-out passage for leading out internally-formed liquid droplets, wherein an injection port for injecting liquid droplets to the outside is formed at the front end of the lead-out passage, and wherein a cross-sectional area Sb of the injection port is formed smaller than a cross-sectional area Sa of the lead-out passage, and a cross sectional area Sc of an exit of the gas supply passage is formed smaller than the cross-sectional area Sa of the lead-out passage.
摘要翻译：本发明的目的是在二流体喷嘴中用于清洁衬底的液滴的均匀的粒子直径和速度，这些衬底在内部混合气体和液体，并且用气体注入液滴以便清洁衬底。用于清洁基板的双流体喷嘴具有用于供应气体的气体供应通道，用于供应液体的液体供应通道和用于引出内部形成的液滴的引出通道，其中用于将液滴注入到喷嘴外部形成在引出通道的前端，并且其中注入口的横截面面积Sb形成为小于引出通道的横截面积Sa，横截面面积Sc 气体供给通道的出口形成为小于引出通道的横截面面积Sa。

3. 发明申请

US20100330794A1 METHOD FOR CLEANING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：清洁半导体器件的方法
公开(公告)号：US20100330794A1
公开(公告)日：2010-12-30
申请号：US12819675
申请日：2010-06-21
申请人： Hirokazu KURISU , Yutaka Takeshima , Itaru Kanno , Masahiko Higashi , Yusaku Hirota
发明人： Hirokazu KURISU , Yutaka Takeshima , Itaru Kanno , Masahiko Higashi , Yusaku Hirota
IPC分类号： H01L21/28 , H01L21/306
CPC分类号： H01L21/02063 , H01L21/28518 , H01L21/76831 , H01L21/76895
摘要： There is provided a method for cleaning a semiconductor device capable of making compatible the inhibition of dissolution of a gate metal material and the acquisition of a favorable contact resistance. A method for cleaning a semiconductor device includes steps: a semiconductor substrate including silicon, and having a main surface is prepared; a multilayer gate including a metal layer and a silicon layer stacked sequentially from the bottom is formed over the main surface; a silicide layer is formed over the main surface and the silicon layer surface; an insulation layer is formed over the silicide layer in each of the main surface and the multilayer gate surface; a shared contact hole is formed in the insulation layer in such a manner that the silicide layer in the main surface of the semiconductor substrate and the surface of the multilayer gate is exposed from the insulation layer; and the shared contact hole is subjected to sulfuric acid cleaning, aqueous hydrogen peroxide cleaning, and APM cleaning separately, respectively, thereby to remove an altered layer formed in the shared contact hole.
摘要翻译：提供了一种能够使与栅极金属材料的溶解的抑制兼容并且获得良好的接触电阻的半导体器件的清洁方法。一种清洗半导体器件的方法，包括步骤：制备包括硅并具有主表面的半导体衬底; 在主表面上形成包括从底部依次堆叠的金属层和硅层的多层栅极; 在主表面和硅层表面上形成硅化物层; 在主表面和多层栅极表面中的每一个中的硅化物层上形成绝缘层; 在绝缘层中形成共享接触孔，使得半导体衬底的主表面中的硅化物层和多层栅极的表面从绝缘层露出; 分别对共用接触孔进行硫酸清洗，过氧化氢水清洗和APM清洗，从而除去形成在共用接触孔中的变化层。

4. 发明申请

US20090137118A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090137118A1
公开(公告)日：2009-05-28
申请号：US12248450
申请日：2008-10-09
申请人： Yusaku Hirota , Itaru Kanno
发明人： Yusaku Hirota , Itaru Kanno
IPC分类号： H01L21/306 , H01L21/768
CPC分类号： H01L21/02063 , H01L21/67086 , H01L21/76807 , H01L21/76814 , H01L21/76832 , H01L21/76834
摘要： Initially, an interconnection 5w that contains copper is formed on a semiconductor substrate 1 (step (A)). On the interconnection 5w, an etching stopper film 6es is formed (step (B)). On the etching stopper film 6es, an insulating layer 6 is formed (step (C)). In the insulating layer 6, a via hole 6v that reaches the etching stopper film 6es is formed (step (D)). A surface of each of via hole 6v and the insulating layer 6 is cleaned with an organic solvent C (step (E)). The etching stopper film 6es is removed such that the interconnection 5w is exposed (step (F)). An interconnection 6w that electrically connects to the exposed interconnection 5w is further formed (step (G)). It is thereby possible to obtain a method of manufacturing a semiconductor device, including a cleaning step that can suppress corrosion of an interconnection that contains copper.
摘要翻译：首先，在半导体基板1上形成包含铜的布线5w（步骤（A））。在互连件5w上形成蚀刻停止膜6es（步骤（B））。在蚀刻停止膜6es上形成绝缘层6（步骤（C））。在绝缘层6中，形成到达蚀刻停止膜6es的通孔6v（步骤（D））。通孔6v和绝缘层6的表面用有机溶剂C清洗（步骤（E））。去除蚀刻停止膜6es，使得互连5w露出（步骤（F））。进一步形成与露出的布线5w电连接的布线6w（步骤（G））。从而可以获得一种制造半导体器件的方法，包括可以抑制含有铜的互连的腐蚀的清洗步骤。

5. 发明申请

US20090014028A1 METHOD OF CLEANING SUBSTRATES AND SUBSTRATE CLEANER 审中-公开
标题翻译：清洗基板和基板清洗器的方法
公开(公告)号：US20090014028A1
公开(公告)日：2009-01-15
申请号：US12170823
申请日：2008-07-10
申请人： Yusaku Hirota , Itaru Kanno , Hiroshi Morita , Junichi Ida
发明人： Yusaku Hirota , Itaru Kanno , Hiroshi Morita , Junichi Ida
IPC分类号： B08B3/10 , B08B3/12 , B08B3/08
CPC分类号： H01L21/67086 , H01L21/6708
摘要： There is provided a method of efficiently cleaning substrates without damaging a fine pattern formed thereon. It is a method of cleaning one or more substrates in a system processing one or more substrates as one batch by dipping one or more substrates as one batch, including the steps of: immersing one or more substrates as one batch in a wet etching solution; ultrasonically cleaning one or more substrates as one batch; and drying one or more substrates as one batch. The step of ultrasonically cleaning employs a cleaning solution having a gas dissolved therein to have a degree of saturation of 60% to 100% at an atmospheric pressure, and an ultrasonic wave having a frequency of at least 500 kHz and an energy of 0.02 W/cm2 to 0.5 W/cm2.
摘要翻译：提供了一种有效地清洁基板而不损害其上形成的精细图案的方法。它是通过一次浸渍一个或多个基材来清洗一个或多个基材作为一个批次的系统中的一个或多个基材的方法，包括以下步骤：将一个或多个基材作为一批在一个湿蚀刻溶液中浸渍; 超声波清洗一个或多个基材作为一批; 并将一个或多个基材作为一批干燥。超声波清洗的步骤使用溶解有气体的清洗液在大气压下具有60〜100％的饱和度，超声波的频率至少为500kHz，能量为0.02W / cm2〜0.5W / cm 2。

6. 发明授权

US08946895B2 Semiconductor device, manufacturing method of semiconductor device, semiconductor manufacturing and inspecting apparatus, and inspecting apparatus 有权
标题翻译：半导体装置，半导体装置的制造方法，半导体制造和检查装置以及检查装置
公开(公告)号：US08946895B2
公开(公告)日：2015-02-03
申请号：US12389479
申请日：2009-02-20
申请人： Takahiko Kato , Hiroshi Nakano , Haruo Akahoshi , Yuuji Takada , Yoshimi Sudo , Tetsuo Fujiwara , Itaru Kanno , Tomoryo Shono , Yukinori Hirose
发明人： Takahiko Kato , Hiroshi Nakano , Haruo Akahoshi , Yuuji Takada , Yoshimi Sudo , Tetsuo Fujiwara , Itaru Kanno , Tomoryo Shono , Yukinori Hirose
IPC分类号： H01L23/48 , H01L23/532 , H01L21/768
CPC分类号： H01L22/12 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L21/76879 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having Cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 27 or less to all crystal grain boundaries of a Cu wiring to 60% or higher. Alternatively, a similar effect of surface void reduction can be obtained by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 3 to all crystal grain boundaries of a Cu wiring to 40% or higher.
摘要翻译：具有包括可以减小表面空隙的碱性晶体结构的Cu布线的半导体器件和用于半导体器件的检查技术。在半导体装置中，通过指定阻挡层和种子层，并设定具有一致位点网格（CSL）边界的占有比例（频率），表面空隙可以降低到当前实用水平的1/10以下，具有对于Cu布线的所有晶界，晶界Sigma值为27以下，为60％以上。或者，可以通过指定阻挡层和种子层并且将具有晶界Sigma值3的重合位点晶格（CSL）边界的占有比例（频率）设置为全部晶粒，可以获得类似的表面空隙降低效果 Cu布线的边界为40％以上。

7. 发明授权

US08569136B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08569136B2
公开(公告)日：2013-10-29
申请号：US13438972
申请日：2012-04-04
申请人： Itaru Kanno
发明人： Itaru Kanno
IPC分类号： H01L21/8234
CPC分类号： H01L21/823468 , H01L21/823418 , H01L21/823814 , H01L21/823864 , H01L29/6653
摘要： A manufacturing method of a semiconductor device is provided which can improve the performance of the semiconductor device. Ion implantation is applied to nMIS regions 1A and 1B and pMIS regions 1C and 1D of a semiconductor substrate 1 with offset spacers formed over sidewalls of gate electrodes GE1, GE2, GE3, and GE4 to thereby form extension regions for source and drain. In this case, a different photoresist pattern is used for each of the nMIS regions 1A and 1B and the pMIS regions 1C and 1D to individually perform the corresponding ion implantation. Every time the photoresist pattern is re-created, the offset spacer is also re-created.
摘要翻译：提供一种可以提高半导体器件的性能的半导体器件的制造方法。将离子注入施加到半导体衬底1的nMIS区域1A和1B以及pMIS区域1C和1D，其中半导体衬底1具有形成在栅电极GE1，GE2，GE3和GE4的侧壁上的偏移间隔物，从而形成用于源极和漏极的延伸区域。在这种情况下，对于nMIS区域1A和1B以及pMIS区域1C和1D中的每一个使用不同的光致抗蚀剂图案来单独执行相应的离子注入。每次重新制造光致抗蚀剂图案时，也重新创建偏移间隔物。

8. 发明授权

US06730239B1 Cleaning agent for semiconductor device & method of fabricating semiconductor device 失效
标题翻译：半导体装置用清洗剂及半导体装置的制造方法
公开(公告)号：US06730239B1
公开(公告)日：2004-05-04
申请号：US09678793
申请日：2000-10-04
申请人： Itaru Kanno , Naoki Yokoi , Hiroshi Morita , Naoki Ichiki , Hideaki Nezu , Masayuki Takashima
发明人： Itaru Kanno , Naoki Yokoi , Hiroshi Morita , Naoki Ichiki , Hideaki Nezu , Masayuki Takashima
IPC分类号： C09K1300
CPC分类号： H01L21/02071 , C09K13/02 , C11D1/44 , C11D1/722 , C11D3/044 , C11D11/0047 , H01L21/02052 , H01L21/31116
摘要： A cleaning agent for a semiconductor device contains a hydroxide, water and a compound expressed in the following general formula (I) and/or the following general formula (II): HO—((EO)x—(PO)y)z—H (I) R—[(EO)x—(PO)y)z—H]m (II) Thus provided is a cleaning agent for a semiconductor device, which is so improved as not to disconnect a wire or an embedded conductive layer.
摘要翻译：用于半导体器件的清洁剂包含氢氧化物，水和由以下通式（I）和/或以下通式（II）表示的化合物：因此提供了一种如此改进的半导体器件用清洁剂不要断开电线或嵌入式导电层。

9. 发明授权

US5129198A Cleaning device for semiconductor wafers 失效
标题翻译：用于半导体波形的清洁装置
公开(公告)号：US5129198A
公开(公告)日：1992-07-14
申请号：US643289
申请日：1991-01-22
申请人： Itaru Kanno , Nobuyoshi Hattori , Takaaki Fukumoto , Masuo Tada
发明人： Itaru Kanno , Nobuyoshi Hattori , Takaaki Fukumoto , Masuo Tada
IPC分类号： B08B7/00 , B24C3/32 , B24C9/00 , H01L21/00 , H01L21/304
CPC分类号： H01L21/67028 , B24C3/322 , B24C9/00
摘要： A cleaning device for semiconductor wafers includes a cleaning vessel, a frozen particle supply unit, a jet nozzle for ejecting the frozen particles toward the semiconductor wafer supported within the cleaning vessel, an exhaust duct coupled to the cleaning vessel, and an exhaust blower. First and second exhausts guide to the exhaust duct frozen particles and contaminants from within the cleaning vessel near the wafer and near the walls of the vessel, respectively. The first exhaust includes a first exhaust guide pipe whose upper and lower ends open to an interior of the cleaning vessel near the wafer and to the exhaust duct, respectively. The second exhaust may include a tapered exhaust guide pipe surrounding the first exhaust guide pipe or a plurality of exhaust guide pipes disposed circumferentially uniformly around the first exhaust guide pipe.
摘要翻译：用于半导体晶片的清洁装置包括清洁容器，冷冻颗粒供应单元，用于将冷冻颗粒朝着支撑在清洁容器内的半导体晶片喷射的喷嘴，连接到清洁容器的排气管和排气鼓风机。第一和第二排气分别引导排气管冷冻颗粒和污染物从清洁容器内的晶片附近和容器壁附近。第一排气包括第一排气引导管，其第一排气引导管的上端和下端分别敞开到清洁容器的靠近晶片和排气管的内部。第二排气可以包括围绕第一排气导管的锥形排气引导管或围绕第一排气导管周向均匀设置的多个排气导管。

10. 发明授权

US5074083A Cleaning device using fine frozen particles 失效
标题翻译：使用精细冷冻颗粒清洁装置
公开(公告)号：US5074083A
公开(公告)日：1991-12-24
申请号：US653960
申请日：1991-02-12
申请人： Itaru Kanno , Takaaki Fukumoto , Toshiaki Ohmori
发明人： Itaru Kanno , Takaaki Fukumoto , Toshiaki Ohmori
IPC分类号： B08B7/00 , B24C1/00 , B24C5/08 , H01L21/304
CPC分类号： B24C5/08 , B24C1/003
摘要： A cleaning device using fine frozen particles electrically charges the fine frozen particles produced by atomizing a liquid within a refrigerated atmosphere, controlling the speed, direction and divergence of the charged particles to cause them to strike a desired portion of an object to be cleaned. All of these operations are performed in a variable degree of vacuum. Thus, the speed, direction and divergence of the particles and the particle grain size can be precisely controlled.
摘要翻译：使用精细冷冻颗粒的清洁装置对冷冻气氛中的液体进行雾化而产生的微细冷冻颗粒进行电荷控制，控制带电粒子的速度，方向和散度，使其撞击待清洁物体的期望部分。所有这些操作都以可变的真空度进行。因此，可以精确地控制粒子的速度，方向和发散度以及粒子粒径。

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