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1. 发明授权

US06609446B1 Separating apparatus, separating method, and method of manufacturing semiconductor substrate 失效
标题翻译：分离装置，分离方法和制造半导体衬底的方法
公开(公告)号：US06609446B1
公开(公告)日：2003-08-26
申请号：US09495847
申请日：2000-02-01
申请人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita , Hirokazu Kurisu
发明人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita , Hirokazu Kurisu
IPC分类号： B23B2710
CPC分类号： H01L21/67092 , H01L21/76259 , Y10T82/16 , Y10T82/16016 , Y10T82/16065
摘要： When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle (112) and injected into the porous layer of a bonded substrate stack (30) while rotating the bonded substrate stack (30) about an axis (C) in a direction (R), thereby separating the bonded substrate stack (30) into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack (30) is to be separated, the ejection nozzle (112) is located within a range (B).
摘要翻译：当在多晶层上形成单晶Si层的第一衬底与第二衬底之间形成绝缘层而制备的键合衬底叠层在多孔可以防止分离的基板的周边部分的层，锯齿状缺陷。从喷嘴（112）喷射流体并将其注入到键合衬底叠层（30）的多孔层中，同时使键合衬底叠层（30）绕轴线（C）沿方向（R）旋转，从而将键合衬底叠层（30）在多孔层上形成两个衬底。当键合衬底叠层（30）的周边部分被分离时，喷嘴（112）位于范围（B）内。

2. 发明授权

US06979629B2 Method and apparatus for processing composite member 失效
标题翻译：复合材料加工方法及装置
公开(公告)号：US06979629B2
公开(公告)日：2005-12-27
申请号：US10678146
申请日：2003-10-06
申请人： Kazutaka Yanagita , Kazuaki Ohmi , Kiyofumi Sakaguchi , Hirokazu Kurisu
发明人： Kazutaka Yanagita , Kazuaki Ohmi , Kiyofumi Sakaguchi , Hirokazu Kurisu
IPC分类号： H01L21/306 , H01L21/00 , H01L21/02 , H01L21/336 , H01L21/762 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/30 , H01L21/46
CPC分类号： H01L21/67092 , H01L21/76259 , Y10S438/977
摘要： A detection apparatus for detecting a feature portion of a composite member having a structure in which a first member having a separation layer inside is brought into tight contact with a second member. The composite member has, as the feature portion, a portion at which a peripheral edge of the first member projects outside a peripheral edge of the second member. The apparatus includes a shift detection section which detects a shift between the peripheral edge of the first member and the peripheral edge of the second member along an outer periphery of the composite member and a determination section which determines the feature portion on the basis of a detection result by the shift detection section.
摘要翻译：一种用于检测复合构件的特征部分的检测装置，其具有其中具有内部具有分离层的第一构件与第二构件紧密接触的结构。复合构件具有作为特征部分的第一构件的周缘突出到第二构件的周边边缘的部分。该装置包括：移动检测部，其沿着复合部件的外周检测第一部件的周缘与第二部件的周缘之间的移动;判定部，其基于检测来决定特征部由移位检测部分产生。

3. 发明申请

US20100178764A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20100178764A1
公开(公告)日：2010-07-15
申请号：US12686841
申请日：2010-01-13
申请人： Kenji NARITA , Yoshiharu Hidaka , Koji Utaka , Takao Yamaguchi , Itaru Kanno , Hirokazu Kurisu
发明人： Kenji NARITA , Yoshiharu Hidaka , Koji Utaka , Takao Yamaguchi , Itaru Kanno , Hirokazu Kurisu
IPC分类号： H01L21/3205
CPC分类号： H01L21/2855 , H01L21/02068 , H01L21/28518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A method for fabricating a semiconductor device, includes the steps of (a) forming a metal film containing a precious metal on a substrate having a semiconductor layer containing silicon or on a conductive film containing silicon formed on the substrate, (b) after step (a), heat-treating the substrate to allow the precious metal to react with silicon to form a silicide film containing the precious metal on the substrate or the conductive film, (c) after step (b), forming an oxide film on a portion of the silicide film underlying an unreacted portion of the precious metal using a first chemical solution, and (d) dissolving the unreacted portion of the precious metal using a second chemical solution.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：（a）在具有含硅的半导体层的基板上或在基板上形成含有硅的导电膜上形成含有贵金属的金属膜，（b）在步骤 a），对基材进行热处理以使贵金属与硅反应以在基材或导电膜上形成含有贵金属的硅化物膜，（c）在步骤（b）之后，在一部分上形成氧化膜使用第一化学溶液在贵金属的未反应部分下面的硅化物膜，和（d）使用第二化学溶液溶解贵金属的未反应部分。

4. 发明申请

US20100330794A1 METHOD FOR CLEANING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：清洁半导体器件的方法
公开(公告)号：US20100330794A1
公开(公告)日：2010-12-30
申请号：US12819675
申请日：2010-06-21
申请人： Hirokazu KURISU , Yutaka Takeshima , Itaru Kanno , Masahiko Higashi , Yusaku Hirota
发明人： Hirokazu KURISU , Yutaka Takeshima , Itaru Kanno , Masahiko Higashi , Yusaku Hirota
IPC分类号： H01L21/28 , H01L21/306
CPC分类号： H01L21/02063 , H01L21/28518 , H01L21/76831 , H01L21/76895
摘要： There is provided a method for cleaning a semiconductor device capable of making compatible the inhibition of dissolution of a gate metal material and the acquisition of a favorable contact resistance. A method for cleaning a semiconductor device includes steps: a semiconductor substrate including silicon, and having a main surface is prepared; a multilayer gate including a metal layer and a silicon layer stacked sequentially from the bottom is formed over the main surface; a silicide layer is formed over the main surface and the silicon layer surface; an insulation layer is formed over the silicide layer in each of the main surface and the multilayer gate surface; a shared contact hole is formed in the insulation layer in such a manner that the silicide layer in the main surface of the semiconductor substrate and the surface of the multilayer gate is exposed from the insulation layer; and the shared contact hole is subjected to sulfuric acid cleaning, aqueous hydrogen peroxide cleaning, and APM cleaning separately, respectively, thereby to remove an altered layer formed in the shared contact hole.
摘要翻译：提供了一种能够使与栅极金属材料的溶解的抑制兼容并且获得良好的接触电阻的半导体器件的清洁方法。一种清洗半导体器件的方法，包括步骤：制备包括硅并具有主表面的半导体衬底; 在主表面上形成包括从底部依次堆叠的金属层和硅层的多层栅极; 在主表面和硅层表面上形成硅化物层; 在主表面和多层栅极表面中的每一个中的硅化物层上形成绝缘层; 在绝缘层中形成共享接触孔，使得半导体衬底的主表面中的硅化物层和多层栅极的表面从绝缘层露出; 分别对共用接触孔进行硫酸清洗，过氧化氢水清洗和APM清洗，从而除去形成在共用接触孔中的变化层。

5. 发明授权

US06900114B2 Separating apparatus, separating method, and method of manufacturing semiconductor substrate 失效
标题翻译：分离装置，分离方法和制造半导体衬底的方法
公开(公告)号：US06900114B2
公开(公告)日：2005-05-31
申请号：US10602922
申请日：2003-06-25
申请人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita , Hirokazu Kurisu
发明人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita , Hirokazu Kurisu
IPC分类号： H01L27/12 , H01L21/00 , H01L21/02 , H01L21/762 , H01L21/763 , H01L21/30 , H01L21/46
CPC分类号： H01L21/67092 , H01L21/76259 , Y10T82/16 , Y10T82/16016 , Y10T82/16065
摘要： When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle (112) and injected into the porous layer of a bonded substrate stack (30) while rotating the bonded substrate stack (30) about an axis (C) in a direction (R), thereby separating the bonded substrate stack (30) into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack (30) is to be separated, the ejection nozzle (112) is located within a range (B).
摘要翻译：当在多晶层上形成单晶Si层的第一衬底与第二衬底之间形成绝缘层而制备的键合衬底叠层在多孔可以防止分离的基板的周边部分的层，锯齿状缺陷。从喷嘴（112）喷射流体并将其注入到键合衬底叠层（30）的多孔层中，同时使键合衬底叠层（30）绕轴线（C）沿方向（R）旋转，从而将键合衬底叠层（30）在多孔层上形成两个衬底。当键合衬底叠层（30）的周边部分被分离时，喷嘴（112）位于范围（B）内。

6. 发明授权

US06653206B2 Method and apparatus for processing composite member 失效
标题翻译：复合材料加工方法及装置
公开(公告)号：US06653206B2
公开(公告)日：2003-11-25
申请号：US09910017
申请日：2001-07-23
申请人： Kazutaka Yanagita , Kazuaki Ohmi , Kiyofumi Sakaguchi , Hirokazu Kurisu
发明人： Kazutaka Yanagita , Kazuaki Ohmi , Kiyofumi Sakaguchi , Hirokazu Kurisu
IPC分类号： H01L2130
CPC分类号： H01L21/67092 , H01L21/76259 , Y10S438/977
摘要： A method of processing a composite member having a structure in which a first member having a separation layer inside is brought into tight contact with a second member. The composite member has a projecting portion at which a peripheral edge of the first member projects outside a peripheral edge of the second member. The method includes a detection step of detecting the projecting portion of the composite member using a sensor and a separation step of starting separating the composite member from the projecting portion detected in the detection step and then separating the composite member into two members at the separation layer.
摘要翻译：一种处理复合构件的方法，所述复合构件具有其中具有内部具有分离层的第一构件与第二构件紧密接触的结构。复合构件具有突出部分，第一构件的周缘在该突出部分突出到第二构件的周缘外侧。该方法包括使用传感器检测复合构件的突出部分的检测步骤以及在检测步骤中检测到的将复合构件与突出部分分开的分离步骤，然后将复合构件分离成分离层的两个构件。

7. 发明授权

US06376332B1 Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing method 失效
标题翻译：复合构件及其分离方法，键合衬底叠层及其分离方法，转移层转移方法和SOI衬底制造方法
公开(公告)号：US06376332B1
公开(公告)日：2002-04-23
申请号：US09494851
申请日：2000-02-01
申请人： Kazutaka Yanagita , Kazuaki Ohmi , Kiyofumi Sakaguchi , Hirokazu Kurisu
发明人： Kazutaka Yanagita , Kazuaki Ohmi , Kiyofumi Sakaguchi , Hirokazu Kurisu
IPC分类号： H01L21301
CPC分类号： H01L21/76259 , H01L21/76251 , H01L2223/54493
摘要： A bonded substrate stack formed by bonding first and second substrates is appropriately separated. A first substrate having a porous layer inside and a single-crystal Si layer and insulating layer on the porous layer is brought into tight contact with a second substrate while shifting their central positions to prepare a bonded substrate stack having a projecting portion at which the outer peripheral edge of the first substrate projects outside that of the second substrate. First, a fluid is ejected to the projecting portion to form a separation start portion, and then, separation is started from the separation start portion while rotating the bonded substrate stack.
摘要翻译：通过粘合第一和第二基板形成的键合衬底叠层被适当地分离。在其内部具有多孔层的第一衬底和多晶硅层上的单晶Si层和绝缘层与第二衬底紧密接触，同时移动其中心位置以制备具有突出部分的键合衬底叠层，第一基板的周缘突出到第二基板的外边缘之外。首先，将流体喷射到突出部分以形成分离开始部分，然后在旋转键合衬底叠层的同时从分离开始部分开始分离。

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