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1. 发明授权

US08493654B2 High-temperature interband cascade lasers 有权
标题翻译：高温带间级联激光器
公开(公告)号：US08493654B2
公开(公告)日：2013-07-23
申请号：US13353770
申请日：2012-01-19
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
IPC分类号： H01S5/30
CPC分类号： B82Y20/00 , H01S5/3077 , H01S5/3401 , H01S5/3407 , H01S5/3416 , H01S5/3422 , H01S5/34306
摘要： An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 Å, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.
摘要翻译：提供了一个带间级联增益介质。所述增益介质可以包括至少一个厚的单独约束层，其包括在所述有源增益区域和所述包层之间的Ga（InAlAs）Sb，并且还可以包括具有减小的厚度的电子注入器区域，空穴注入器区域，包括两个具有总厚度大于约100，通过电子势垒与相邻的空穴注入器区域隔开的有效增益量子阱区域，该电子势垒具有足以降低区域中心活性电子量子阱和喷射器孔状态之间的波函数的平方的重叠度，以及分离活性区域的至少一级的电子和空穴注入器的厚AlSb屏障。

2. 发明授权

US08290011B2 Interband cascade lasers 有权
标题翻译：带间级联激光器
公开(公告)号：US08290011B2
公开(公告)日：2012-10-16
申请号：US13023656
申请日：2011-02-09
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/3401 , H01S5/3422 , H01S5/34306
摘要： A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.
摘要翻译：提出了具有增益介质的增益介质和带间级联激光器。增益介质可以具有以下特征中的一个或两个：（1）空穴注入器区域中的一个或多个空穴量子阱的厚度与有源量子阱区域中的有源孔量子阱的厚度相当，使得空穴注入器区域中的价带最大值比活性孔量子阱中的价带最大值低至少100meV; 和（2）电子注入器区域的最后一个阱的厚度在介质的下一阶段的有源增益区域中的第一有源电子量子阱的厚度的85至110％之间。包含根据本发明的增益介质的激光器可以在高温下在室温连续波操作中在约2.5至8μm的中红外范围内发射至少为4.6μm的波长，约400的阈值电流密度 A / cm 2和阈值功率密度约900W / cm2。

3. 发明授权

US08125706B2 High-temperature interband cascade lasers 有权
标题翻译：高温带间级联激光器
公开(公告)号：US08125706B2
公开(公告)日：2012-02-28
申请号：US12402627
申请日：2009-03-12
申请人： Igor Vurgaftman , Jerry R Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
发明人： Igor Vurgaftman , Jerry R Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
IPC分类号： H01S3/00
CPC分类号： B82Y20/00 , H01S5/3077 , H01S5/3401 , H01S5/3407 , H01S5/3416 , H01S5/3422 , H01S5/34306
摘要： A gain medium and an interband cascade laser, an interband cascade amplifier, and an external cavity laser having the gain medium are presented. The gain medium can include any one or more of the following features: (1) the active quantum well region includes a thick and In-rich GaInSb hole well; (2) the hole injector includes two or more GaSb hole wells having thicknesses in a specified range; (3) the electron and hole injectors are separated by a thick AlSb barrier to suppress interband absorption; (4) a first electron barrier of the hole injector region separating the hole injector region from an adjacent active quantum well region has a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states to not more than 5%; (5) the thickness of the first InAs electron well in the electron injector, as well as the total thickness of the electron injector, is reduced; (6) the number of cascaded stages is reduced; (7) transition regions are inserted at the interfaces between the various regions of the gain medium so as to smooth out abrupt shifts of the conduction-band minimum; (8) thick separate confinement layers comprising Ga(InAlAs)Sb are disposed between the active gain region and the cladding to confine the optical mode and increase its overlap with the active stages; and (9) the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AlSb SL cladding layers. An interband cascade laser, an interband cascade amplifier, or an external cavity laser employing a gain medium having these features can emit at a wavelength of about 2.5 μm to about 8 μm at high temperatures.
摘要翻译：提出了增益介质和带间级联激光器，带间级联放大器和具有增益介质的外腔激光器。增益介质可以包括以下特征中的一个或多个：（1）有源量子阱区域包括厚和富InGaInSb孔; （2）孔喷射器包括厚度在规定范围内的两个以上的GaSb孔穴; （3）电子和空穴注入器被厚的AlSb屏障隔开，以抑制带间吸收; （4）将空穴注入器区域与相邻的有源量子阱区域分离的空穴注入器区域的第一电子势垒具有足以降低区中心活性电子量子阱和喷射器孔状态之间的波函数重叠的平方的厚度，不超过5％; （5）电子注入器中的第一InAs电子阱的厚度以及电子注入器的总厚度减小; （6）级联级数减少; （7）过渡区域插入在增益介质的各个区域之间的界面处，以平滑导带最小值的突变; （8）包含Ga（InAlAs）Sb的厚的分离的约束层设置在有源增益区和包层之间以限制光学模式并增加其与有源级的重叠; 并且（9）优化包层的掺杂分布，以最小化光学模式与InAs / AlSb SL包覆层的最重掺杂部分的重叠。带间级联激光器，带间级联放大器或采用具有这些特征的增益介质的外腔激光器可以在高温下以约2.5μm至约8μm的波长发射。

4. 发明申请

US20120128018A1 Interband Cascade Lasers 有权
标题翻译：带间级联激光器
公开(公告)号：US20120128018A1
公开(公告)日：2012-05-24
申请号：US13023656
申请日：2011-02-09
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
IPC分类号： H01S5/343 , H01S5/34 , H01L29/66 , B82Y20/00
CPC分类号： B82Y20/00 , H01S5/3401 , H01S5/3422 , H01S5/34306
摘要： A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.
摘要翻译：提出了具有增益介质的增益介质和带间级联激光器。增益介质可以具有以下特征中的一个或两个：（1）空穴注入器区域中的一个或多个空穴量子阱的厚度与有源量子阱区域中的有源孔量子阱的厚度相当，使得空穴注入器区域中的价带最大值比活性孔量子阱中的价带最大值低至少100meV; 和（2）电子注入器区域的最后一个阱的厚度在介质的下一阶段的有源增益区域中的第一有源电子量子阱的厚度的85至110％之间。包含根据本发明的增益介质的激光器可以在高温下在室温连续波操作中在约2.5至8μm的中红外范围内发射至少为4.6μm的波长，约400的阈值电流密度 A / cm 2和阈值功率密度约900W / cm2。

5. 发明申请

US20130003770A1 Interband Cascade Lasers 有权
标题翻译：带间级联激光器
公开(公告)号：US20130003770A1
公开(公告)日：2013-01-03
申请号：US13608115
申请日：2012-09-10
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
IPC分类号： H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/3401 , H01S5/3422 , H01S5/34306
摘要： A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.
摘要翻译：提出了具有增益介质的增益介质和带间级联激光器。增益介质可以具有以下特征中的一个或两个：（1）空穴注入器区域中的一个或多个空穴量子阱的厚度与有源量子阱区域中的有源孔量子阱的厚度相当，使得空穴注入器区域中的价带最大值比活性孔量子阱中的价带最大值低至少100meV; 和（2）电子注入器区域的最后一个阱的厚度在介质的下一阶段的有源增益区域中的第一有源电子量子阱的厚度的85至110％之间。包含根据本发明的增益介质的激光器可以在高温下在室温连续波操作中在约2.5至8μm的中红外范围内发射至少为4.6μm的波长，约400的阈值电流密度 A / cm 2和阈值功率密度约900W / cm2。

6. 发明申请

US20120127564A1 High-Temperature Interband Cascade Lasers 有权
标题翻译：高温区间级联激光器
公开(公告)号：US20120127564A1
公开(公告)日：2012-05-24
申请号：US13353770
申请日：2012-01-19
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
IPC分类号： H01S5/343 , B82Y20/00
CPC分类号： B82Y20/00 , H01S5/3077 , H01S5/3401 , H01S5/3407 , H01S5/3416 , H01S5/3422 , H01S5/34306
摘要： An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 Å, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.
摘要翻译：提供了一个带间级联增益介质。所述增益介质可以包括至少一个厚的单独约束层，其包括在所述有源增益区域和所述包层之间的Ga（InAlAs）Sb，并且还可以包括具有减小的厚度的电子注入器区域，空穴注入器区域，包括两个具有总厚度大于约100，通过电子势垒与相邻的空穴注入器区域隔开的有效增益量子阱区域，该电子势垒具有足以降低区域中心活性电子量子阱和喷射器孔状态之间的波函数的平方的重叠度，以及分离活性区域的至少一级的电子和空穴注入器的厚AlSb屏障。

7. 发明申请

US20110215705A1 MICRO-CHIP PLASMONIC SOURCE 审中-公开
标题翻译：微芯片等离子体源
公开(公告)号：US20110215705A1
公开(公告)日：2011-09-08
申请号：US12717989
申请日：2010-03-05
申请人： James Peter Long , Chul-soo Kim , James R. Lindle , Jerry R. Meyer , Igor Vurgaftman
发明人： James Peter Long , Chul-soo Kim , James R. Lindle , Jerry R. Meyer , Igor Vurgaftman
IPC分类号： H01J61/28
CPC分类号： H01J61/28 , G02B6/1226
摘要： A surface plasmon polariton device that may be integrated onto a single microchip is disclosed. The device employs a laser that emits polarized light across a gap into a plasmonic waveguide. Surface plasmon polaritons are thereby created in an efficient matter. The device provides a source of surface plasmon polaritons at near infrared wavelengths in an integrated package.
摘要翻译：公开了可集成在单个微芯片上的表面等离子体激元器件。该器件采用将跨越间隙的偏振光发射到等离子体激元波导中的激光器。因此，在有效的物质中产生表面等离子体激元极化子。该器件在集成封装中提供近红外波长的表面等离子体激元的源。

8. 发明申请

US20090115555A1 TUNABLE RESONATOR AND TUNABLE FILTER 有权
标题翻译： TUNABLE谐振器和TUNABLE滤波器
公开(公告)号：US20090115555A1
公开(公告)日：2009-05-07
申请号：US12045850
申请日：2008-03-11
申请人： Chul-soo Kim , Sang-won Yun , Young-ho Cho , In-sang Song , Byeong-ju Ha , Duck-hwan Kim
发明人： Chul-soo Kim , Sang-won Yun , Young-ho Cho , In-sang Song , Byeong-ju Ha , Duck-hwan Kim
IPC分类号： H01P1/203
CPC分类号： H01P1/20336
摘要： A tunable filter is provided which includes a filter unit comprising a pair of microstrips which are disposed facing each other, a capacitor unit connected to one side of the filter unit, and an adjustment unit for regulating the length of each of the pair of microstrips to adjust inductance of the filter unit, the adjustment unit being connected to the opposite side of the filter unit. The length of the microstrips may thereby be regulated in order to vary the frequency band.
摘要翻译：提供了一种可调谐滤波器，其包括一个滤波器单元，该滤波器单元包括一对彼此相对设置的微带，连接到滤波单元一侧的电容器单元和用于调节该对微带中的每一个的长度的调节单元调节过滤器单元的电感，调节单元连接到过滤器单元的相对侧。因此可以调节微带的长度以改变频带。

9. 发明授权

US07423501B2 Film bulk acoustic wave resonator and manufacturing method thererof 有权
标题翻译：薄膜体声波谐振器及其制造方法
公开(公告)号：US07423501B2
公开(公告)日：2008-09-09
申请号：US11395298
申请日：2006-04-03
申请人： Duck-hwan Kim , Chul-soo Kim , Yun-kwon Park , Sang-chul Sul , Byeoung-ju Ha , In-sang Song
发明人： Duck-hwan Kim , Chul-soo Kim , Yun-kwon Park , Sang-chul Sul , Byeoung-ju Ha , In-sang Song
IPC分类号： H03H9/15 , H03H9/17 , H03H9/54
CPC分类号： H03H9/172 , H03H3/02 , H03H9/02015 , H03H9/02118
摘要： A film bulk acoustic resonator includes a substrate; a lower electrode formed on top of the substrate; a piezoelectric membrane formed on top of the lower electrode and having a crystallographic axis so inclined as to generate a total reflection when an acoustic wave advances toward the lower electrode; and an upper electrode formed on top of the piezoelectric membrane.
摘要翻译：薄膜体声波谐振器包括基板; 形成在基板顶部的下电极; 形成在所述下电极的顶部并具有如此倾斜的结晶轴以在声波向下电极前进时产生全反射的压电膜; 以及形成在压电膜的顶部上的上电极。

10. 发明申请

US20070013463A1 Film bulk acoustic wave resonator and manufacturing method thereof 有权
标题翻译：薄膜体声波谐振器及其制造方法
公开(公告)号：US20070013463A1
公开(公告)日：2007-01-18
申请号：US11395298
申请日：2006-04-03
申请人： Duck-hwan Kim , Chul-soo Kim , Yun-kwon Park , Sang-chul Sul , Byeoung-ju Ha , In-sang Song
发明人： Duck-hwan Kim , Chul-soo Kim , Yun-kwon Park , Sang-chul Sul , Byeoung-ju Ha , In-sang Song
IPC分类号： H03H9/54
CPC分类号： H03H9/172 , H03H3/02 , H03H9/02015 , H03H9/02118
摘要： A film bulk acoustic resonator includes a substrate; a lower electrode formed on top of the substrate; a piezoelectric membrane formed on top of the lower electrode and having a crystallographic axis so inclined as to generate a total reflection when an acoustic wave advances toward the lower electrode; and an upper electrode formed on top of the piezoelectric membrane.
摘要翻译：薄膜体声波谐振器包括基板; 形成在基板顶部的下电极; 形成在所述下电极的顶部并具有如此倾斜的结晶轴以在声波向下电极前进时产生全反射的压电膜; 以及形成在压电膜的顶部上的上电极。

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