专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08798111B2 Interband cascade lasers with engineered carrier densities 有权
标题翻译：具有工程载波密度的带间级联激光器
公开(公告)号：US08798111B2
公开(公告)日：2014-08-05
申请号：US13422309
申请日：2012-03-16
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , ChulSoo Kim , Mijin Kim , Charles D. Merritt
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , ChulSoo Kim , Mijin Kim , Charles D. Merritt
IPC分类号： H01S5/34 , H01S5/30
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/3401 , H01S5/3407 , H01S5/3422 , H01S5/34313
摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.
摘要翻译：提供了改善II型和I型ICL的性能的方法，特别是在中红外波长范围内。 II型或I型ICL的电子注入器可以被非常n掺杂以增加有源量子阱中的电子与空穴的比例，从而增加有源量子阱中的辐射复合的概率并降低阈值电流密度Jth需要实现激光。对于II型和I型ICL，掺杂应具有低1012范围内的薄片密度。在II型或I型的情况下，在一些实施例中，重掺杂可以集中在电子注入器的中量子阱中，而在其它实施例中，可以向有源量子阱移动掺杂硅。

2. 发明申请

US20130243020A1 Epitaxial-Side-Down Mounted High-Power Semiconductor Lasers 有权
标题翻译：外延侧面安装的大功率半导体激光器
公开(公告)号：US20130243020A1
公开(公告)日：2013-09-19
申请号：US13802887
申请日：2013-03-14
申请人： Chul Soo Kim , William W. Bewley , Mijin Kim , Charles D. Merritt , Chadwick Lawrence Canedy , Joshua Abell , Igor Vurgaftman , Jerry R. Meyer
发明人： Chul Soo Kim , William W. Bewley , Mijin Kim , Charles D. Merritt , Chadwick Lawrence Canedy , Joshua Abell , Igor Vurgaftman , Jerry R. Meyer
IPC分类号： H01S5/024 , H01S5/022
CPC分类号： H01S5/024 , H01S5/005 , H01S5/022 , H01S5/0224 , H01S5/02248 , H01S5/02268 , H01S5/02272 , H01S5/02469 , H01S5/183 , H01S5/22 , H01S2301/176
摘要： A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated with a heat-spreading material layer and are configured so that the maximum height of the posts is about the same as the maximum height of the laser structure. When the laser apparatus is mounted to a heat sink in an epi-down configuration using solder applied to the top of the laser structure and the at least one post, the channels between the at least one post and the laser structure provide a relief flow path for the solder and ensure that the laser structure does not come directly into contact with the solder.
摘要翻译：一种激光装置，其配置为在散热器上外延安装。激光装置包括半导体激光器结构和在基板上的至少一个柱，其中激光器结构和柱通过通道彼此分离。激光结构和柱可选地涂覆有热扩散材料层，并且构造成使得柱的最大高度与激光结构的最大高度大致相同。当使用施加到激光结构的顶部的焊料和至少一个柱将激光装置以外延形式安装到散热器时，至少一个支柱和激光结构之间的通道提供一个释放流动路径用于焊料，并确保激光器结构不会直接与焊料接触。

3. 发明申请

US20120128018A1 Interband Cascade Lasers 有权
标题翻译：带间级联激光器
公开(公告)号：US20120128018A1
公开(公告)日：2012-05-24
申请号：US13023656
申请日：2011-02-09
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
IPC分类号： H01S5/343 , H01S5/34 , H01L29/66 , B82Y20/00
CPC分类号： B82Y20/00 , H01S5/3401 , H01S5/3422 , H01S5/34306
摘要： A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.
摘要翻译：提出了具有增益介质的增益介质和带间级联激光器。增益介质可以具有以下特征中的一个或两个：（1）空穴注入器区域中的一个或多个空穴量子阱的厚度与有源量子阱区域中的有源孔量子阱的厚度相当，使得空穴注入器区域中的价带最大值比活性孔量子阱中的价带最大值低至少100meV; 和（2）电子注入器区域的最后一个阱的厚度在介质的下一阶段的有源增益区域中的第一有源电子量子阱的厚度的85至110％之间。包含根据本发明的增益介质的激光器可以在高温下在室温连续波操作中在约2.5至8μm的中红外范围内发射至少为4.6μm的波长，约400的阈值电流密度 A / cm 2和阈值功率密度约900W / cm2。

4. 发明申请

US20110215705A1 MICRO-CHIP PLASMONIC SOURCE 审中-公开
标题翻译：微芯片等离子体源
公开(公告)号：US20110215705A1
公开(公告)日：2011-09-08
申请号：US12717989
申请日：2010-03-05
申请人： James Peter Long , Chul-soo Kim , James R. Lindle , Jerry R. Meyer , Igor Vurgaftman
发明人： James Peter Long , Chul-soo Kim , James R. Lindle , Jerry R. Meyer , Igor Vurgaftman
IPC分类号： H01J61/28
CPC分类号： H01J61/28 , G02B6/1226
摘要： A surface plasmon polariton device that may be integrated onto a single microchip is disclosed. The device employs a laser that emits polarized light across a gap into a plasmonic waveguide. Surface plasmon polaritons are thereby created in an efficient matter. The device provides a source of surface plasmon polaritons at near infrared wavelengths in an integrated package.
摘要翻译：公开了可集成在单个微芯片上的表面等离子体激元器件。该器件采用将跨越间隙的偏振光发射到等离子体激元波导中的激光器。因此，在有效的物质中产生表面等离子体激元极化子。该器件在集成封装中提供近红外波长的表面等离子体激元的源。

5. 发明授权

US06826223B1 Surface-emitting photonic crystal distributed feedback laser systems and methods 失效
标题翻译：表面发射光子晶体分布反馈激光系统及方法
公开(公告)号：US06826223B1
公开(公告)日：2004-11-30
申请号：US10446259
申请日：2003-05-28
申请人： Jerry Meyer , Igor Vurgaftman
发明人： Jerry Meyer , Igor Vurgaftman
IPC分类号： H01S308
CPC分类号： H01S5/18 , H01S5/0425 , H01S5/105 , H01S5/1203 , H01S5/1206 , H01S5/1231 , H01S2301/18
摘要： A surface-emitting photonic crystal distributed feedback laser apparatus configured to emit an optical beam of light. The apparatus includes a laser cavity bounded by top and bottom optical claddings, an active region configured to produce optical gain upon receiving optical or electrical pumping, a periodic two-dimensional grating having an order higher than the fundamental and configured to induce modulation of a modal refractive index, and lateral pumped gain area contained within an area covered by the grating, the lateral pumped gain area configured to produce gain in one or more lasing modes having a modal index modulated by the grating. The lateral pumped gain area has a substantially circular shape of diameter D, and wherein the pumped gain area is enclosed by an unpumped region contained within the area covered by the grating but not receiving the optical or electrical pumping.
摘要翻译：配置为发射光束的表面发射光子晶体分布反馈激光装置。该装置包括由顶部和底部光学包层限定的激光腔，被配置为在接收光学或电学泵浦时产生光学增益的有源区域，周期性二维光栅，其具有高于基极的阶数并被配置为诱导模态的调制折射率和包含在由光栅覆盖的区域内的横向泵浦增益区域，横向泵浦增益区域被配置为产生具有由光栅调制的模态指数的一个或多个激光模式的增益。横向泵浦增益区域具有直径D的大致圆形形状，并且其中泵浦增益区域被包含在由光栅所覆盖的区域内的未抽空区域包围，但不接收光学或电气泵送。

6. 发明授权

US09305122B1 Computationally efficient method for building quantum heterostructures 有权
标题翻译：用于构建量子异质结构的计算有效方法
公开(公告)号：US09305122B1
公开(公告)日：2016-04-05
申请号：US14615499
申请日：2015-02-06
申请人： Igor Vurgaftman , Jerry R. Meyer , Chaffra Affouda , Matthew P. Lumb , Edward H. Aifer
发明人： Igor Vurgaftman , Jerry R. Meyer , Chaffra Affouda , Matthew P. Lumb , Edward H. Aifer
IPC分类号： G06F17/50 , H01S5/34 , H01L33/06 , H01L31/0352
CPC分类号： G06F17/5009 , G06F17/5068 , G06F2217/16 , H01L31/035236 , H01L33/06 , H01S5/0035 , H01S5/3422
摘要： A computationally efficient method for building a superlattice structure that improves an optoelectronic device performance characteristic that depends on fundamental superlattice material properties such as absorption coefficient α(ω), radiative efficiency Rsp and/or electron density n.
摘要翻译：一种用于构建超晶格结构的计算上有效的方法，其改进了取决于基本超晶格材料性质如吸收系数α（ω），辐射效率Rsp和/或电子密度n的光电子器件性能特征。

7. 发明申请

US20150188290A1 INTERBAND CASCADE LASERS WITH ENGINEERED CARRIER DENSITIES 有权
标题翻译： INTERBAND CASCADE激光与工程承运人密度
公开(公告)号：US20150188290A1
公开(公告)日：2015-07-02
申请号：US14308768
申请日：2014-06-19
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , Chul Soo Kim , Mijin Kim , Charles D. Merritt
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , Chul Soo Kim , Mijin Kim , Charles D. Merritt
IPC分类号： H01S5/34 , H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/3401 , H01S5/3407 , H01S5/3422 , H01S5/34313
摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.
摘要翻译：提供了改善II型和I型ICL的性能的方法，特别是在中红外波长范围内。 II型或I型ICL的电子注入器可以被非常n掺杂以增加有源量子阱中的电子与空穴的比例，从而增加有源量子阱中的辐射复合的概率并降低阈值电流密度Jth需要实现激光。对于II型和I型ICL，掺杂应具有低1012范围内的薄片密度。在II型或I型的情况下，在一些实施例中，重掺杂可以集中在电子注入器的中量子阱中，而在其它实施例中，可以向有源量子阱移动掺杂硅。

8. 发明授权

US08879593B2 Epitaxial-side-down mounted high-power semiconductor lasers 有权
标题翻译：外延侧面安装的大功率半导体激光器
公开(公告)号：US08879593B2
公开(公告)日：2014-11-04
申请号：US13802887
申请日：2013-03-14
申请人： Chul Soo Kim , William W. Bewley , Mijin Kim , Charles D. Merritt , Chadwick Lawrence Canedy , Joshua Abell , Igor Vurgaftman , Jerry R. Meyer
发明人： Chul Soo Kim , William W. Bewley , Mijin Kim , Charles D. Merritt , Chadwick Lawrence Canedy , Joshua Abell , Igor Vurgaftman , Jerry R. Meyer
IPC分类号： H01S3/04 , H01S5/024 , H01S5/022 , H01S5/00 , H01S5/183 , H01S5/22
CPC分类号： H01S5/024 , H01S5/005 , H01S5/022 , H01S5/0224 , H01S5/02248 , H01S5/02268 , H01S5/02272 , H01S5/02469 , H01S5/183 , H01S5/22 , H01S2301/176
摘要： A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated with a heat-spreading material layer and are configured so that the maximum height of the posts is about the same as the maximum height of the laser structure. When the laser apparatus is mounted to a heat sink in an epi-down configuration using solder applied to the top of the laser structure and the at least one post, the channels between the at least one post and the laser structure provide a relief flow path for the solder and ensure that the laser structure does not come directly into contact with the solder.
摘要翻译：一种激光装置，其配置为在散热器上外延安装。激光装置包括半导体激光器结构和在基板上的至少一个柱，其中激光器结构和柱通过通道彼此分离。激光结构和柱可选地涂覆有热扩散材料层，并且构造成使得柱的最大高度与激光结构的最大高度大致相同。当使用施加到激光结构的顶部的焊料和至少一个柱将激光装置以外延形式安装到散热器时，至少一个支柱和激光结构之间的通道提供一个释放流动路径用于焊料，并确保激光器结构不会直接与焊料接触。

9. 发明授权

US07755828B2 Method for optical control of microwave phase 有权
标题翻译：微波相位光学控制方法
公开(公告)号：US07755828B2
公开(公告)日：2010-07-13
申请号：US11956626
申请日：2007-12-14
申请人： Marc Currie , Igor Vurgaftman , Janet W Lou
发明人： Marc Currie , Igor Vurgaftman , Janet W Lou
IPC分类号： G02F1/01
CPC分类号： H03B17/00
摘要： A method and system for modifying the detected phase of a signal by driving a photodetector into saturation. This system and method differs from current manual and electrical microwave phase modification by using saturation means for modifying the phase. The system and method may use a plurality of the signal generators for saturating the photodetector.
摘要翻译：一种用于通过将光电检测器驱动到饱和度来修改检测到的信号相位的方法和系统。该系统和方法与当前的手动和微波相位修改不同，通过使用饱和装置来修改相位。该系统和方法可以使用多个信号发生器来饱和光电检测器。

10. 发明授权

US06996152B2 Photonic-crystal distributed-feedback and distributed bragg-reflector lasers 失效
公开(公告)号：US06996152B2
公开(公告)日：2006-02-07
申请号：US10385165
申请日：2003-03-07
申请人： Igor Vurgaftman , Jerry Meyer
发明人： Igor Vurgaftman , Jerry Meyer
IPC分类号： H01S3/08
CPC分类号： B82Y10/00 , B82Y20/00 , H01S5/0267 , H01S5/0425 , H01S5/10 , H01S5/105 , H01S5/1071 , H01S5/1085 , H01S5/12 , H01S5/20
摘要： A photonic-crystal distributed-feedback laser includes a laser cavity with a waveguide structure that has a cavity length Lc and is bounded by two mirrors; an active region for producing optical gain upon receiving optical pumping or an input voltage; at least one layer having a periodic two-dimensional grating with modulation of a modal refractive index, the grating being defined on a rectangular lattice with a first period along a first axis of the grating and a second period along a second perpendicular axis of the grating, and wherein the grating produces three diffraction processes having coupling coefficients κ1′, κ2′, κ3′; and a lateral gain area contained within a second area patterned with the grating that has substantially a shape of a gain stripe with a width W, with the gain stripe tilted at a first tilt angle relative to the two mirrors. The rectangular lattice of the grating is tilted at a second tilt angle substantially the same as the first tilt angle with respect to the gain stripe, and the ratio of the first and second grating periods is equal to the tangent of the first tilt angle, with the first tilt angle being between about 16° and about 23°. The hexagonal lattice does not need to be tilted with respect to the two mirrors. The laser's output emerges along the normal to a facet irrespective of the operating laser wavelength, facilitating coupling the laser light into a fiber or other optical system while avoiding beam steering. The two-dimensional nature of the feedback in the laser provides for varying the wavelength through angle tuning. Wavelength tuning by changing the propagation direction (propagation angle) permits a straightforward selection of different wavelengths from photonic crystal devices monolithically fabricated on a single wafer. The fabrication procedure is straightforward since no ridges need to be defined. The single-mode spectral purity of the rectangular-lattice PCDFB is robust, owing to the near absence of side modes, and exhibits good beam quality.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式