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    • 5. 发明申请
    • NANO RESONATOR AND MANUFACTURING METHOD THEREOF
    • 纳米谐振器及其制造方法
    • US20140021443A1
    • 2014-01-23
    • US13846685
    • 2013-03-18
    • Jie Ai YuDuck Hwan KimIn Sang SongJing Cui
    • Jie Ai YuDuck Hwan KimIn Sang SongJing Cui
    • B81C1/00B81B3/00
    • B81C1/00134B81B3/0018H03H3/0072H03H9/2463
    • A nano resonator includes a substrate, a first insulating layer disposed on the substrate, a first source disposed on the first insulating layer at a first position, a first drain disposed on the first insulating layer at a second position spaced apart from the first position so that the first drain faces the first source, a first nano-wire channel having a first end connected to the first source and a second end connected to the first drain, and having a doping type and a doping concentration that are identical to a doping type and a doping concentration of the first source and the first drain, and a second nano-wire channel disposed at a predetermined distance from the first nano-wire channel in a direction perpendicular to the substrate or a direction parallel to the substrate.
    • 纳米谐振器包括衬底,设置在衬底上的第一绝缘层,在第一位置处设置在第一绝缘层上的第一源极,在与第一位置间隔开的第二位置处设置在第一绝缘层上的第一漏极, 第一漏极面向第一源极,第一纳米线通道具有连接到第一源极的第一端和连接到第一漏极的第二端,并且具有与掺杂类型相同的掺杂类型和掺杂浓度 以及第一源极和第一漏极的掺杂浓度以及与第一纳米线通道在垂直于衬底的方向或平行于衬底的方向设置在预定距离处的第二纳米线通道。
    • 10. 发明申请
    • APPARATUS AND METHOD FOR SENSING TEMPERATURE
    • 用于感测温度的装置和方法
    • US20130099122A1
    • 2013-04-25
    • US13616445
    • 2012-09-14
    • Ho Soo PARKIn Sang SONGDuck Hwan KIMChul Soo KIMSang Uk SONJea Shik SHINCui Jing
    • Ho Soo PARKIn Sang SONGDuck Hwan KIMChul Soo KIMSang Uk SONJea Shik SHINCui Jing
    • G01K11/26G01J5/10
    • G01J5/44
    • A temperature sensing apparatus and method are described to detect a change in a frequency due to a change in a temperature. An infrared light sensing apparatus and method are also provided. The temperature sensing apparatus may include an electrode to generate an electrical signal, a piezoelectric layer to convert the electrical signal into an acoustic wave, and a temperature sensitive layer formed by doping impurities in one or more structures formed on a substrate. Additionally, the infrared light sensing apparatus may convert into heat infrared light incident to an infrared light absorption layer, using an infrared light reflection layer and the infrared light absorption layer. A temperature sensitive layer may detect a change in a resonant frequency based on a change in a temperature of the heat, and may detect a change in infrared light based on the change in the resonant frequency.
    • 描述了一种温度检测装置和方法,以检测由于温度变化引起的频率变化。 还提供了一种红外光感测装置和方法。 温度检测装置可以包括用于产生电信号的电极,将电信号转换成声波的压电层,以及通过在衬底上形成的一个或多个结构中掺杂杂质形成的温度敏感层。 此外,红外光检测装置可以使用红外光反射层和红外光吸收层转换入入红外光吸收层的热红外光。 温度敏感层可以基于热的温度的变化来检测谐振频率的变化,并且可以基于谐振频率的变化来检测红外光的变化。