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1. 发明授权

US06796269B2 Apparatus and method for monitoring plasma processing apparatus 失效
标题翻译：用于监测等离子体处理装置的装置和方法
公开(公告)号：US06796269B2
公开(公告)日：2004-09-28
申请号：US10229027
申请日：2002-08-28
申请人： Ichiro Sasaki , Toshio Masuda , Muneo Furuse , Hideyuki Yamamoto
发明人： Ichiro Sasaki , Toshio Masuda , Muneo Furuse , Hideyuki Yamamoto
IPC分类号： C23C16509
CPC分类号： H01J37/32009 , H01J37/32935
摘要： The present apparatus comprises a vacuum process chamber 100 that contains an upper electrode 110 having a conductive plate 115 with gas supply holes for supplying a process gas and a lower electrode 130 having a platform on which a sample is to be mounted; process gas supply means 117 for supplying the process gas to the gas supply holes in the upper electrode 110 and exhaust means 106 for exhausting the vacuum process chamber; a high frequency power supply 121 for applying a high frequency power to the upper electrode to generate a plasma between the upper and lower electrodes; a high frequency bias power supply 122 for applying a high frequency power to the upper electrode to generate a direct current bias potential in the upper electrode; and abnormal discharge determination means 152 for determining whether an abnormal discharge has occurred or not based on the direct current bias potential generated in the upper electrode.
摘要翻译：本装置包括真空处理室100，其包含具有导电板115的上电极110，该导电板115具有用于供应处理气体的气体供应孔和具有其上将要安装样品的平台的下电极130; 用于将处理气体供给到上电极110中的气体供给孔和用于排出真空处理室的排气装置106的处理气体供给装置117; 用于向上部电极施加高频电力以在上部电极和下部电极之间产生等离子体的高频电源121; 用于向上部电极施加高频电力以在上部电极中产生直流偏置电位的高频偏置电源122; 以及异常放电判定单元152，用于根据在上部电极中产生的直流偏置电位来判定是否发生异常放电。

2. 发明申请

US20050051270A1 Method for monitoring plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置的监视方法
公开(公告)号：US20050051270A1
公开(公告)日：2005-03-10
申请号：US10944796
申请日：2004-09-21
申请人： Ichiro Sasaki , Toshio Masuda , Muneo Furuse , Hideyuki Yamamoto
发明人： Ichiro Sasaki , Toshio Masuda , Muneo Furuse , Hideyuki Yamamoto
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/66 , C23F1/00
CPC分类号： H01J37/32009 , H01J37/32935
摘要： The present apparatus comprises a vacuum process chamber 100 that contains an upper electrode 110 having a conductive plate 115 with gas supply holes for supplying a process gas and a lower electrode 130 having a platform on which a sample is to be mounted; process gas supply means 117 for supplying the process gas to the gas supply holes in the upper electrode 110 and exhaust means 106 for exhausting the vacuum process chamber; a high frequency power supply 121 for applying a high frequency power to the upper electrode to generate a plasma between the upper and lower electrodes; a high frequency bias power supply 122 for applying a high frequency power to the upper electrode to generate a direct current bias potential in the upper electrode; and abnormal discharge determination means 152 for determining whether an abnormal discharge has occurred or not based on the direct current bias potential generated in the upper electrode.
摘要翻译：本装置包括真空处理室100，其包含具有导电板115的上电极110，该导电板115具有用于供应处理气体的气体供应孔和具有其上将要安装样品的平台的下电极130; 用于将处理气体供给到上电极110中的气体供给孔和用于排出真空处理室的排气装置106的处理气体供给装置117; 用于向上部电极施加高频电力以在上部电极和下部电极之间产生等离子体的高频电源121; 用于向上部电极施加高频电力以在上部电极中产生直流偏置电位的高频偏置电源122; 以及异常放电判定单元152，用于根据在上部电极中产生的直流偏置电位来判定是否发生异常放电。

3. 发明授权

US06245190B1 Plasma processing system and plasma processing method 失效
标题翻译：等离子体处理系统和等离子体处理方法
公开(公告)号：US06245190B1
公开(公告)日：2001-06-12
申请号：US09048075
申请日：1998-03-26
申请人： Toshio Masuda , Katsuhiko Mitani , Tetsunori Kaji , Jun'ichi Tanaka , Katsuya Watanabe , Shigeru Shirayone , Toru Otsubo , Ichiro Sasaki , Hideshi Fukumoto , Makoto Koizumi
发明人： Toshio Masuda , Katsuhiko Mitani , Tetsunori Kaji , Jun'ichi Tanaka , Katsuya Watanabe , Shigeru Shirayone , Toru Otsubo , Ichiro Sasaki , Hideshi Fukumoto , Makoto Koizumi
IPC分类号： H05H146
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32165 , H01J37/32623 , H01J37/3266 , H01J37/32678
摘要： A plasma processing apparatus and a method therefor which can achieve a preferred process rate, a fine pattern process capability, a selectivity and uniformity of processing at the same time compatibly for a large size wafer, which effects are achieved by controlling the plasma state and the dissociation state of etching gas through control of the electron resonance through application of a magnetic field thereto. A high frequency power at 20-300 MHz is applied across a pair of electrodes in a vacuum process chamber, and a magnetic field is formed parallel to the plane of the electrodes in the space between the electrodes. By controlling the intensity of the magnetic field in a range of 100 gauss or smaller, formation of electron cyclotron resonance and electron sheath resonance occurring from interaction between the electrical field and the magnetic field in the electrode sheath portion is controlled. Thereby, the plasma state, i.e., the electron density, electron energy distribution and dissociation state of the process gas in the plasma, can be controlled. The magnetic field is generated by a plurality of coils, an outer shield, and pendant yoke to form magnetic field parallel to the plane of the electrodes in the space between the upper and the bottom electrodes.
摘要翻译：一种等离子体处理装置及其方法，其能够通过控制等离子体状态和等离子体状态来实现对于大尺寸晶片同时实现优选的处理速率，精细图案处理能力，同时处理的选择性和均匀性，通过对其施加磁场来控制电子共振来蚀刻气体的解离状态。在真空处理室中的一对电极上施加20-300MHz的高频功率，并且在电极之间的空间中形成平行于电极平面的磁场。通过控制100高斯或更小范围内的磁场的强度，控制由电场鞘部分中的电场和磁场之间的相互作用产生的电子回旋共振和电子鞘共振的形成。由此，可以控制等离子体状态，即等离子体中的处理气体的电子密度，电子能量分布和解离状态。磁场由多个线圈，外屏蔽和悬挂磁轭产生，以在上电极和下电极之间的空间中形成平行于电极平面的磁场。

4. 发明授权

US06422172B1 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US06422172B1
公开(公告)日：2002-07-23
申请号：US09040404
申请日：1998-03-18
申请人： Jyunichi Tanaka , Toru Otsubo , Toshio Masuda , Ichiro Sasaki , Tetsunori Kaji , Katsuya Watanabe
发明人： Jyunichi Tanaka , Toru Otsubo , Toshio Masuda , Ichiro Sasaki , Tetsunori Kaji , Katsuya Watanabe
IPC分类号： C23F102
CPC分类号： H01J37/32082 , C23C16/505 , H01J37/32422
摘要： A plasma processing apparatus has plasma generating means including a means for generating capacitive coupled discharge and a means for radiating electromagnetic waves, so that the energy state of electrons is independently controlled by a combination of a plasma due to capacitive coupled discharge and a plasma due to radiation of electromagnetic waves of a high-frequency, to thereby control the occurrence of radical species, and thereby establishing a compatibility, for example, between high selective etching and high accuracy and high speed in etching or between film quality and film formation rate. Since the density distribution of the plasma can be controlled without any change in hardware configuration by adjusting distributions of the power for capacitive coupled discharge and the power for radiation of electromagnetic waves, the entire surface of a large-sized substrate can be etched at a high accuracy into a fine pattern. The apparatus is also intended to prevent the occurrence of dust caused by plasma processing and changes in characteristics of plasma processing, and hence to enhance productivity of semiconductor devices and/or liquid crystal display elements.
摘要翻译：等离子体处理装置具有等离子体产生装置，其包括用于产生电容耦合放电的装置和用于辐射电磁波的装置，从而由于电容耦合放电引起的等离子体和等离子体的组合独立地控制电子的能量状态，由于辐射高频的电磁波，从而控制自由基物质的发生，从而在高选择性蚀刻和高精度和高速蚀刻或膜质量和成膜速率之间建立兼容性。由于可以通过调节用于电容耦合放电的功率的分布和电磁波的辐射功率来控制等离子体的密度分布而没有硬件配置的任何变化，因此可以将高尺寸基板的整个表面以高精确到精细模式。该装置还旨在防止等离子体处理引起的灰尘的发生和等离子体处理的特性的变化，从而提高半导体器件和/或液晶显示元件的生产率。

5. 发明授权

US07058470B2 Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor 有权
标题翻译：监控和/或控制半导体制造装置的方法及其系统
公开(公告)号：US07058470B2
公开(公告)日：2006-06-06
申请号：US10999006
申请日：2004-11-30
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , G05B13/048 , G05B19/41865 , G05B23/024 , G05B2219/31357 , G05B2219/32058 , H01L21/67276 , H01L2924/0002 , Y02P90/12 , Y02P90/14 , Y02P90/18 , Y02P90/20 , H01L2924/00
摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition or input parameter. The process recipe control unit includes a controller which controls at least one of a plurality of different processing performances for processing of the semiconductor wafer.
摘要翻译：用于处理半导体晶片的半导体处理装置包括：用于监视半导体处理装置的处理状态的传感器;输入由半导体处理装置处理的半导体晶片的处理结果的测量值的处理结果输入单元;以及模型方程依赖于由传感器获取的感测数据和测量值，以产生用于使用感测数据作为解释变量来预测处理结果的模型方程。该装置包括：处理结果预测单元，其基于模型方程和感测数据预测处理结果;以及处理配方控制单元，其将预测的处理结果与预先设定的值进行比较，以控制处理条件或输入参数。处理配方控制单元包括控制器，用于控制用于处理半导体晶片的多个不同处理性能中的至少一个。

6. 发明授权

US06923885B2 Plasma processing system and apparatus and a sample processing method 有权
标题翻译：等离子体处理系统和设备及样品处理方法
公开(公告)号：US06923885B2
公开(公告)日：2005-08-02
申请号：US10732286
申请日：2003-12-11
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.
摘要翻译：一种等离子体处理装置，其具有位于真空室中的样品台，设置在与放置在样品台上的样品相对的位置并且面对在真空室中产生的等离子体的结构，以及设置在该结构中的至少一个通孔气体通过该气体流入真空室。光传输器安装在所述至少一个通孔的背面上，来自所述样品的光通过所述至少一个通孔穿过，所述光通过所述光发射器检测。

7. 发明申请

US20050087298A1 Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor 有权
标题翻译：监控和/或控制半导体制造装置的方法及其系统
公开(公告)号：US20050087298A1
公开(公告)日：2005-04-28
申请号：US10999006
申请日：2004-11-30
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
IPC分类号： G05B19/418 , H01L21/66 , C23F1/00
CPC分类号： H01L22/20 , G05B13/048 , G05B19/41865 , G05B23/024 , G05B2219/31357 , G05B2219/32058 , H01L21/67276 , H01L2924/0002 , Y02P90/12 , Y02P90/14 , Y02P90/18 , Y02P90/20 , H01L2924/00
摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition. The process recipe control unit includes a controller which controls at least one among a plurality of different processing performances for processing of the semiconductor wafer.
摘要翻译：用于处理半导体晶片的半导体处理装置包括：用于监视半导体处理装置的处理状态的传感器;输入由半导体处理装置处理的半导体晶片的处理结果的测量值的处理结果输入单元;以及模型方程依赖于由传感器获取的感测数据和测量值，以产生用于使用感测数据作为解释变量来预测处理结果的模型方程。该装置包括：处理结果预测单元，其基于模型方程和感测数据预测处理结果;以及处理配方控制单元，其将预测处理结果与预先设定的值进行比较，以控制处理条件。处理配方控制单元包括控制用于处理半导体晶片的多个不同处理性能中的至少一个的控制器。

8. 发明授权

US06776872B2 Data processing apparatus for semiconductor processing apparatus 有权
标题翻译：半导体处理装置的数据处理装置
公开(公告)号：US06776872B2
公开(公告)日：2004-08-17
申请号：US10087982
申请日：2002-03-05
申请人： Junichi Tanaka , Toshio Masuda , Akira Kagoshima , Shoji Ikuhara , Hideyuki Yamamoto
发明人： Junichi Tanaka , Toshio Masuda , Akira Kagoshima , Shoji Ikuhara , Hideyuki Yamamoto
IPC分类号： H05H100
CPC分类号： H01L21/67276 , H01L22/20 , H01L22/34
摘要： A data processing apparatus for a semiconductor manufacturing apparatus includes a semiconductor manufacturing apparatus for executing processing for a wafer, a data collecting semiconductor device for collecting processing data generated in association with the processing, and a data copying semiconductor device for extracting the processing data collected in the data collecting semiconductor device and for producing a copy of the processing data. The apparatus may include a data analyzer for analyzing the data copy produced by the data copying semiconductor device and for diagnosing a processing state of the processing apparatus.
摘要翻译：一种半导体制造装置的数据处理装置包括：用于执行晶片处理的半导体制造装置，用于收集与该处理相关联地生成的处理数据的数据收集半导体装置;以及数据复制半导体装置，用于提取收集的处理数据数据采集半导体器件和用于产生处理数据的副本。该装置可以包括用于分析由数据复制半导体器件产生的数据副本并用于诊断处理装置的处理状态的数据分析器。

9. 发明授权

US07686917B2 Plasma processing system and apparatus and a sample processing method 有权
标题翻译：等离子体处理系统和设备及样品处理方法
公开(公告)号：US07686917B2
公开(公告)日：2010-03-30
申请号：US11780014
申请日：2007-07-19
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.
摘要翻译：等离子体处理装置包括具有设置在处理室中的安装表面的样品台的真空容器，以及构成室的天花板的基本均匀的厚度和电功率的板。该板与样品台相对设置并基本上平行，以覆盖舞台安装表面的整个区域并且在其中具有通孔。直径大于通孔直径的光发射器设置在真空容器的内部，并且具有位于板的后表面上方且间隔很小距离的位置处的端面，以便接收来自腔室的光通过通孔。光发射器相对于板的后表面独立地可拆卸。

10. 发明申请

US20060199288A1 Data processing apparatus for semiconductor processing apparatus 审中-公开
标题翻译：半导体处理装置的数据处理装置
公开(公告)号：US20060199288A1
公开(公告)日：2006-09-07
申请号：US11429199
申请日：2006-05-08
申请人： Junichi Tanaka , Toshio Masuda , Akira Kagoshima , Shoji Ikuhara , Hideyuki Yamamoto
发明人： Junichi Tanaka , Toshio Masuda , Akira Kagoshima , Shoji Ikuhara , Hideyuki Yamamoto
IPC分类号： H01L21/66
CPC分类号： H01L21/67276 , H01L22/20 , H01L22/34
摘要： A semiconductor processing method in which a sample wafer is disposed inside of a chamber for processing and process data is detected by using a generated plasma generated which includes data concerning emission light generated. Information data corresponding to the processing data is selectively sent to one of first and second data storing devices in accordance with a predetermined condition. The selective sending of the information data includes selectively sending the information data to one of the first and second data storing devices until an amount of the information data which has been sent to and stored in the one of the storing devices reaches a predetermined amount of processing of the sample wafer as the predetermined condition, and thereafter selectively sending the information data corresponding to a succeeding process to the other of the first and second data storing devices.
摘要翻译：通过使用包括关于所产生的发光的数据的产生的所生成的等离子体来检测其中样品晶片设置在用于处理和处理数据的室内的半导体处理方法。与处理数据相对应的信息数据根据预定条件选择性地发送到第一和第二数据存储装置之一。信息数据的选择性发送包括有选择地将信息数据发送到第一和第二数据存储装置中的一个，直到发送到存储装置中的一个的信息数据量达到预定量的处理的样品晶片作为预定条件，然后选择性地将对应于后续处理的信息数据发送到第一和第二数据存储装置中的另一个。

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