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1. 发明申请

US20070096115A1 Nitride-based semiconductor light emitting diode 审中-公开
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20070096115A1
公开(公告)日：2007-05-03
申请号：US11581757
申请日：2006-10-17
申请人： Hyuk Lee , In Pyeon , Hyun-Ju Park , Hyun Kim , Dong Kim , Hyoun Shin
发明人： Hyuk Lee , In Pyeon , Hyun-Ju Park , Hyun Kim , Dong Kim , Hyoun Shin
IPC分类号： H01L33/00 , H01L31/12 , H01L27/15 , H01L29/26
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a current spreading layer formed on the p-type nitride semiconductor layer; a p-electrode formed on the current spreading layer, the p-electrode having two p-type branch electrodes; and an n-electrode formed on the n-type nitride semiconductor layer on which the active layer is not formed, the n-electrode having one n-type branch electrode. The n-type branch electrode is formed so as to be inserted between two of the p-type branch electrodes, and a distance from the outermost side of a transparent electrode adjacent to the n-electrode to the p-electrode is identical at any position.
摘要翻译：氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的电流扩散层; 形成在电流扩散层上的p电极，p电极具有两个p型分支电极; 以及形成在其上未形成有源层的n型氮化物半导体层上的n电极，n电极具有一个n型分支电极。 n型分支电极被形成为插入在两个p型分支电极之间，并且从与n电极相邻的透明电极的最外侧到p电极的距离在任何位置是相同的。

2. 发明申请

US20060060878A1 Submount for use in flipchip-structured light-emitting device including transistor 审中-公开
标题翻译：用于包括晶体管的倒装芯片结构的发光器件的底座
公开(公告)号：US20060060878A1
公开(公告)日：2006-03-23
申请号：US10998941
申请日：2004-11-30
申请人： Hyun Kim , Hyuk Lee , Hyoun Shin , In Pyeon
发明人： Hyun Kim , Hyuk Lee , Hyoun Shin , In Pyeon
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599 , H01L2224/05099
摘要： Disclosed herein is a submount to mount a light emitting diode in a flipchip-structured light emitting device. The submount including a transistor to mount a nitride semiconductor light emitting diode in a flipchip-structured light emitting device includes: a substrate made of a first conductive semiconductor material; a first region formed on a partial area of the substrate, and made of a second conductive semiconductor material; a second region formed on the remaining regions other than the first region, and made of the second conductive semiconductor material; first and second electrodes formed on the first and second regions, respectively; and a conductive layer formed on the back of the substrate, wherein the first and second electrodes are connected to an n-type electrode and a p-type electrode of the nitride semiconductor light emitting diode through the use of a bump.
摘要翻译：这里公开了一种用于在倒装芯片结构的发光器件中安装发光二极管的基座。包括在半导体结构的发光器件中安装氮化物半导体发光二极管的晶体管的基座包括：由第一导电半导体材料制成的衬底; 形成在所述基板的局部区域上并由第二导电半导体材料制成的第一区域; 形成在除了所述第一区域之外的其余区域上并由所述第二导电半导体材料制成的第二区域; 分别形成在第一和第二区域上的第一和第二电极; 以及形成在所述基板的背面上的导电层，其中所述第一和第二电极通过使用凸块与所述氮化物半导体发光二极管的n型电极和p型电极连接。

3. 发明申请

US20060220043A1 Nitride semiconductor light emitting device 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20060220043A1
公开(公告)日：2006-10-05
申请号：US11328196
申请日：2006-01-10
申请人： Hyun Kim , Hyoun Shin , Hyuk Lee , In Pyeon , Chang Kim
发明人： Hyun Kim , Hyoun Shin , Hyuk Lee , In Pyeon , Chang Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： The present invention relates to a nitride semiconductor light emitting device having a rectangular top view in which n-electrode and p-electrode structure is appropriately formed to improve propagation of currents and enhance luminance. The light emitting device includes an n-type nitride semiconductor layer formed on a substrate, and an n-electrode including an n-side bonding pad and a finger-type n-electrode extending away from the n-side bonding pad. The device further includes a mesa structure including an active layer and a p-type nitride semiconductor layer deposited in their order, an ohmic contact layer formed on a substantially entire upper surface of the mesa structure, and a p-electrode including a p-side bonding pad and a finger-type p-electrode extending away from the p-side bonding pad.
摘要翻译：本发明涉及一种具有矩形顶视图的氮化物半导体发光器件，其中适当地形成n电极和p电极结构以改善电流的传播和增强亮度。发光器件包括形成在衬底上的n型氮化物半导体层，以及包括n侧接合焊盘和从n侧焊盘延伸的手指型n电极的n电极。该器件还包括台阶结构，其包括依次沉积的有源层和p型氮化物半导体层，形成在台面结构的大致整个上表面上的欧姆接触层和包括p侧的p型接合焊盘和远离p侧接合焊盘延伸的手指型p电极。

4. 发明申请

US20060202225A1 Submount for use in flipchip-structured light emitting device including transistor 审中-公开
标题翻译：用于包括晶体管的倒装芯片结构的发光器件的底座
公开(公告)号：US20060202225A1
公开(公告)日：2006-09-14
申请号：US11430999
申请日：2006-05-10
申请人： Hyun Kim , Hyuk Lee , Hyoun Shin , In Pyeon
发明人： Hyun Kim , Hyuk Lee , Hyoun Shin , In Pyeon
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599 , H01L2224/05099
摘要： Disclosed herein is a submount to mount a light emitting diode in a flipchip-structured light emitting device. The submount including a transistor to mount a nitride semiconductor light emitting diode in a flipchip-structured light emitting device includes: a substrate made of a first conductive semiconductor material; a first region formed on a partial area of the substrate, and made of a second conductive semiconductor material; a second region formed on the remaining regions other than the first region, and made of the second conductive semiconductor material; first and second electrodes formed on the first and second regions, respectively; and a conductive layer formed on the back of the substrate, wherein the first and second electrodes are connected to an n-type electrode and a p-type electrode of the nitride semiconductor light emitting diode through the use of a bump.
摘要翻译：这里公开了一种用于在倒装芯片结构的发光器件中安装发光二极管的基座。包括在半导体结构的发光器件中安装氮化物半导体发光二极管的晶体管的基座包括：由第一导电半导体材料制成的衬底; 形成在所述基板的局部区域上并由第二导电半导体材料制成的第一区域; 形成在除了所述第一区域之外的其余区域上并由所述第二导电半导体材料制成的第二区域; 分别形成在第一和第二区域上的第一和第二电极; 以及形成在所述基板的背面上的导电层，其中所述第一和第二电极通过使用凸块与所述氮化物半导体发光二极管的n型电极和p型电极连接。

5. 发明申请

US20060163604A1 Gallium nitride-based light emitting device having light emitting diode for protecting electrostatic discharge, and melthod for manufacturing the same 审中-公开
标题翻译：具有用于保护静电放电的发光二极管的氮化镓系发光器件及其制造方法
公开(公告)号：US20060163604A1
公开(公告)日：2006-07-27
申请号：US11244084
申请日：2005-10-06
申请人： Hyoun Shin , Hyun Kim , In Pyeon , Chang Kim
发明人： Hyoun Shin , Hyun Kim , In Pyeon , Chang Kim
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L27/15 , H01L33/32
摘要： A gallium nitride-based light emitting device, and a method for manufacturing the same are provided. The light emitting device comprises a substrate; a main GaN-based LED including a first p-side electrode and a first n-side electrode, the main GaN-based LED formed in a first region on the substrate; and an ESD protecting GaN-based LED including a second p-side electrode and a second n-side electrode, the ESD protecting GaN-based LED formed in a second region on the substrate. The first region is separated from the second region by a device isolation region. The first p-side and n-side electrodes are electrically connected to the second n-side and p-side electrodes, respectively.
摘要翻译：提供了一种氮化镓系发光器件及其制造方法。发光器件包括衬底; 包括第一p侧电极和第一n侧电极的主要GaN基LED，所述主GaN基LED形成在所述基板上的第一区域中; 以及包括第二p侧电极和第二n侧电极的ESD保护GaN基LED，形成在基板上的第二区域中的ESD保护GaN基LED。第一区域通过器件隔离区域与第二区域分离。第一p侧电极和n侧电极分别电连接到第二n侧电极和p侧电极。

6. 发明申请

US20070080353A1 Nitride-based semiconductor light emitting diode and method of manufacturing the same 有权
标题翻译：氮化物半导体发光二极管及其制造方法
公开(公告)号：US20070080353A1
公开(公告)日：2007-04-12
申请号：US11543798
申请日：2006-10-06
申请人： Hyuk Lee , Hyun Kim , Dong Kim , Hyoun Shin
发明人： Hyuk Lee , Hyun Kim , Dong Kim , Hyoun Shin
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

7. 发明申请

US20060054909A1 Light emitting diode improved in luminous efficiency 审中-公开
标题翻译：发光二极管的发光效率提高
公开(公告)号：US20060054909A1
公开(公告)日：2006-03-16
申请号：US10993371
申请日：2004-11-22
申请人： Hyoun Shin , Bong Yi , Jae Ro , In Pyeon
发明人： Hyoun Shin , Bong Yi , Jae Ro , In Pyeon
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： The present invention relates to an LED, in which an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer and a p-electrode are formed in their order on a sapphire substrate. A high reflectivity material layer containing Cu and Si is deposited on a remaining partial region of the n-doped semiconductor layer. An n-electrode is formed on the high reflectivity material layer. The high reflectivity material layer formed between the n-electrode and the partial region of the underlying n-doped semiconductor layer can reflect light toward a substrate, thereby improving the luminous efficiency of the LED.
摘要翻译：本发明涉及一种LED，其中在蓝宝石衬底上依次形成n掺杂半导体层，有源层，p掺杂半导体层和p电极。包含Cu和Si的高反射率材料层沉积在n掺杂半导体层的剩余部分区域上。在高反射率材料层上形成n电极。形成在n电极和下面的n掺杂半导体层的部分区域之间的高反射率材料层可以将光朝向衬底反射，从而提高LED的发光效率。

8. 发明申请

US20070090378A1 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20070090378A1
公开(公告)日：2007-04-26
申请号：US11581797
申请日：2006-10-17
申请人： Hyuk Lee , Hyoun Shin , Chang Kim , Yong Kim
发明人： Hyuk Lee , Hyoun Shin , Chang Kim , Yong Kim
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L33/44 , H01L24/17 , H01L33/62 , H01L2924/12036 , H01L2924/12041 , H01L2924/00
摘要： A nitride-based semiconductor LED which is flip-chip bonded on a lead pattern of a sub-mount through a bump ball comprises a substrate; a light-emitting structure formed on the substrate; an electrode formed on the light-emitting structure; a protective film formed on the resulting structure having the electrode formed therein, the protective film exposing the electrode surface corresponding to a portion which is connected to the lead pattern of the sub-mount through the bump ball; and a grid-shaped buffer film formed on the electrode surface exposed through the protective film.
摘要翻译：通过凸块球倒装芯片结合在副安装座的引线图案上的氮化物基半导体LED包括基板; 形成在所述基板上的发光结构; 形成在发光结构上的电极; 形成在其上形成有电极的所得结构上的保护膜，所述保护膜将电极表面暴露于通过所述凸块球连接到所述副安装座的引线图案的部分; 以及形成在通过保护膜暴露的电极表面上的格栅状缓冲膜。

9. 发明申请

US20050145875A1 Flip chip type nitride semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：倒装芯片型氮化物半导体发光器件及其制造方法
公开(公告)号：US20050145875A1
公开(公告)日：2005-07-07
申请号：US10861511
申请日：2004-06-07
申请人： Hyun Kim , Yong Kim , Hyoun Shin
发明人： Hyun Kim , Yong Kim , Hyoun Shin
IPC分类号： H01L21/28 , H01L33/10 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/62 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Disclosed herein are a flip chip type nitride semiconductor light emitting device, which comprises a substrate for growing a nitride semiconductor material, an n-type nitride semiconductor layer formed on the substrate, an active layer formed on at least a part of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, a bonding force providing layer formed on the p-type nitride semiconductor layer and adapted to provide a bonding force relative to the p-type nitride semiconductor layer, a reflective electrode layer formed on the bonding force providing layer, and adapted to reflect light produced in the active layer toward the substrate and to diffuse electric current, and a cap layer formed on the reflective electrode layer, and adapted to provide a bonding force between the reflective electrode layer and a bonding metal and to reduce contact resistance.
摘要翻译：本文公开了一种倒装芯片型氮化物半导体发光器件，其包括用于生长氮化物半导体材料的衬底，形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体的至少一部分上的有源层氮化物半导体层，形成在有源层上的p型氮化物半导体层，形成在p型氮化物半导体层上并适于提供相对于p型氮化物半导体层的结合力的接合力提供层，反射电极层，形成在所述接合力提供层上，并且适于将在所述有源层中产生的光朝向所述衬底反射并扩散电流;以及覆盖层，形成在所述反射电极层上，并且适于在所述反射层之间提供接合力电极层和接合金属，并降低接触电阻。

10. 发明申请

US20060033116A1 Gallium nitride based semiconductor light emitting diode and process for preparing the same 审中-公开
标题翻译：氮化镓基半导体发光二极管及其制备方法
公开(公告)号：US20060033116A1
公开(公告)日：2006-02-16
申请号：US11049876
申请日：2005-02-04
申请人： Seung Chae , Jun Kwak , Hyoun Shin , Jun Seo
发明人： Seung Chae , Jun Kwak , Hyoun Shin , Jun Seo
IPC分类号： H01L29/221
CPC分类号： H01L21/28575 , H01L29/452 , H01L33/32 , H01L33/40 , H01L33/42 , H01L2924/10155
摘要： The present invention provides a gallium nitride based semiconductor light emitting diode having high transparency, and at the same time, capable of improving contact resistance between a p-type GaN layer and electrode and a process for preparing the same. These objects can be accomplished by forming, on an upper part of a upper clad layer made of p-GaN, an ohmic contact forming layer using MIO, ZIO and CIO (In2O3 including one of Mg, Zn and Cu), and then a transparent electrode layer and a second electrode with ITO thereon, so as to improve contact resistance between the upper clad layer and the second electrode while providing high transparency.
摘要翻译：本发明提供一种具有高透明度，同时可提高p型GaN层与电极之间的接触电阻的氮化镓系半导体发光二极管及其制备方法。这些目的可以通过在由p-GaN制成的上覆盖层的上部上形成使用MIO，ZIO和CIO的欧姆接触形成层来实现的（In 2 N 3 O 3， / SUB>包括Mg，Zn和Cu中的一种），然后是透明电极层和具有ITO的第二电极，以提高上覆层和第二电极之间的接触电阻，同时提供高透明度。

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